公开(公告)号：WO2007142690A3

公开(公告)日：2008-12-24

申请号：PCT/US2006060559

申请日：2006-11-06

Applicant: APPLIED MATERIALS INC ,  MA PAUL ,  SHAH KAVITA ,  WU DIEN-YEH ,  GANGULI SESHADRI ,  MARCADAL CHRISTOPHE ,  WU FREDERICK C ,  CHU SCHUBERT S

Inventor： MA PAUL ,  SHAH KAVITA ,  WU DIEN-YEH ,  GANGULI SESHADRI ,  MARCADAL CHRISTOPHE ,  WU FREDERICK C ,  CHU SCHUBERT S

IPC: C23F1/00 ,  C23C16/22 ,  C23C16/26 ,  C23C16/44 ,  C23C16/50 ,  H01L21/306

CPC classification number: C23C16/45544 ,  C23C16/18 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32633 ,  H01L21/28562 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE- ALD) process. In one embodiment, a process chamber (50) is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber (50) comprises components that are capable of being electrically insulated, electrically grounded or RP energized. In one example, a chamber (50) body and a gas manifold (800) assembly are grounded and separated by electrically insulated components, such as an insulation cap (700), a plasma screen insert (600) and an isolation ring (200). A showerhead (300), a plasma baffle (500) and a water box (400) are positioned between the insulated components and become RF hot when activated by a plasma generator (92). Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber (50).

Abstract translation: 本发明的实施例提供一种被配置为在原子层沉积（ALD）工艺（诸如等离子体增强型ALD（PE-ALD））工艺中形成材料的装置。 在一个实施例中，处理室（50）被配置为在PE-ALD过程期间将衬底暴露于一系列气体和等离子体。 处理室（50）包括能够被电绝缘，电接地或RP通电的部件。 在一个示例中，腔室（50）主体和气体歧管（800）组件由诸如绝缘帽（700），等离子体屏幕插入件（600）和隔离环（200）的电绝缘部件接地并分离， 。 喷头（300），等离子体挡板（500）和水箱（400）位于绝缘部件之间，并且当被等离子体发生器（92）激活时变为RF热。 本发明的其它实施例提供沉积工艺以在处理室（50）内形成材料层。

公开(公告)号：WO2008052047A2

公开(公告)日：2008-05-02

申请号：PCT/US2007082369

申请日：2007-10-24

Applicant: APPLIED MATERIALS INC ,  WU DIEN-YEH ,  BAJAJ PUNEET ,  YUAN XIAOXIONG ,  KIM STEVEN H ,  CHU SCHUBERT S ,  MA PAUL F ,  AUBUCHON JOSEPH F

Inventor： WU DIEN-YEH ,  BAJAJ PUNEET ,  YUAN XIAOXIONG ,  KIM STEVEN H ,  CHU SCHUBERT S ,  MA PAUL F ,  AUBUCHON JOSEPH F

IPC: C23C16/00 ,  C23C16/455

CPC classification number: C23C16/45506 ,  C23C16/45582

Abstract: Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing a centrally positioned gas dispersing channel, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis. The chamber lid assembly further contains a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets within the converging portion of the gas dispersing channel and positioned to provide a circular gas flow through the gas dispersing channel.

Abstract translation: 本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。 在一个实施例中，提供了一种用于处理衬底的室，其包括容纳中心定位的气体分散通道的室盖组件，其中气体分散通道的会聚部分朝向气体分散通道的中心轴逐渐变细， 气体分散通道远离中心轴逐渐变细。 室盖组件还包括从气体分散通道的发散部分延伸到室盖组件的周边部分的锥形底表面，其中锥形底表面的形状和尺寸基本上覆盖衬底，并且两个管道耦合到 在气体分散通道的会聚部分内的气体入口并且定位成提供通过气体分散通道的圆形气体流。

公开(公告)号：WO03035927A3

公开(公告)日：2003-07-31

申请号：PCT/US0234553

申请日：2002-10-25

Applicant: APPLIED MATERIALS INC

Inventor： CHEN LING ,  KU VINCENT ,  WU DIEN-YEH ,  CHUNG HUA ,  OUYE ALAN ,  NAKASHIMA NORMAN ,  CHANG MEI

IPC: C23C16/44 ,  C23C16/455 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/76843 ,  C23C16/4411 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45544 ,  C23C16/45563 ,  C23C16/45582 ,  H01L21/28562

Abstract: An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.

Abstract translation: 提供了一种用于执行诸如原子层沉积的循环层沉积工艺的装置和方法。 一方面，该装置包括具有基板接收表面的基板支撑件和包括从腔室盖的中心部分延伸的锥形通道和从通道延伸到腔室盖的周边部分的底面的腔室盖， 所述底表面的形状和尺寸基本上覆盖所述基板接收表面。 该装置还包括联接到逐渐扩大的通道的一个或多个阀以及联接到每个阀的一个或多个气体源。

公开(公告)号：WO2010027669A3

公开(公告)日：2010-05-14

申请号：PCT/US2009054321

申请日：2009-08-19

Applicant: APPLIED MATERIALS INC ,  MA PAUL F ,  AUBUCHON JOSEPH F ,  CHANG MEI ,  KIM STEVEN H ,  WU DIEN-YEH ,  NAKASHIMA NORMAN M ,  JOHNSON MARK ,  PALAKODETI ROJA

Inventor： MA PAUL F ,  AUBUCHON JOSEPH F ,  CHANG MEI ,  KIM STEVEN H ,  WU DIEN-YEH ,  NAKASHIMA NORMAN M ,  JOHNSON MARK ,  PALAKODETI ROJA

IPC: H01L21/205

CPC classification number: C23C16/34 ,  C23C16/4411 ,  C23C16/45508 ,  C23C16/45531 ,  C23C16/45582 ,  H01L21/28562 ,  H01L21/76843

Abstract: Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT).

Abstract translation: 本发明的实施例提供一种用于处理处理室的内表面并且在诸如原子层沉积（ALD）或通过化学气相沉积（CVD）的气相沉积处理期间在材料上沉积材料的方法。 在一个实施例中，处理室和衬底的内表面可以在预处理过程中暴露于试剂，例如氢化配体化合物。 氢化配体化合物可以是与在后续沉积过程中使用的金属有机前体形成的游离配体相同的配体。 游离配体通常在沉积过程中通过氢化或热分解形成。 在一个实例中，在进行气相沉积过程之前，在预处理过程期间将处理室和基板暴露于烷基胺化合物（例如二甲胺），所述气相沉积过程利用具有烷基氨基配体的金属有机化学前体，例如五（二甲氨基）钽 （PDMAT）。

公开(公告)号：WO2004106584B1

公开(公告)日：2005-02-17

申请号：PCT/US2004016715

申请日：2004-05-27

Applicant: APPLIED MATERIALS INC ,  CHEN LING ,  KU VINCENT W ,  CHUNG HUA ,  MARCADAL CHRISTOPHE ,  GANGULI SESHADRI ,  LIN JENNY ,  WU DIEN-YEH ,  OUYE ALAN ,  CHANG MEI

Inventor： CHEN LING ,  KU VINCENT W ,  CHUNG HUA ,  MARCADAL CHRISTOPHE ,  GANGULI SESHADRI ,  LIN JENNY ,  WU DIEN-YEH ,  OUYE ALAN ,  CHANG MEI

IPC: C23C16/18 ,  C23C16/34 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/45525 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4481 ,  C23C16/4487 ,  H01L21/28562 ,  H01L21/76843

Abstract: Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.

Abstract translation: 本发明的实施例涉及一种用于生成用于半导体处理系统（320）的前体的装置。 该装置包括具有侧壁（402），顶部和底部的罐（300）。 罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。 在一个实施例中，该装置还包括部分围绕罐（300）的加热器（430）。 加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。 还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。