FLEXURE BEARING TO REDUCE QUADRATURE FOR RESONATING MICROMACHINED DEVICES
    1.
    发明申请
    FLEXURE BEARING TO REDUCE QUADRATURE FOR RESONATING MICROMACHINED DEVICES 审中-公开
    柔性轴承减少用于共振微型设备的平台

    公开(公告)号:WO2012037501A2

    公开(公告)日:2012-03-22

    申请号:PCT/US2011/052006

    申请日:2011-09-16

    CPC classification number: B81C1/00523 G01C19/56 G01C19/5712

    Abstract: An example include microelectromechanical die for sensing motion that includes a fixed portion, an anchor coupled to the fixed portion, a first nonlinear suspension member coupled to anchor on a side of the anchor, a second nonlinear suspension member coupled to the anchor on the same side of the anchor, the second nonlinear suspension member having a shape and location mirroring the first nonlinear suspension member about an anchor bisecting plane and a proof-mass that is planar, the proof mass suspended at least in part by the first nonlinear suspension member and the second nonlinear suspension member such that the proof-mass is rotable about the anchor and is slideable in a plane parallel to the fixed portion.

    Abstract translation: 一个例子包括用于感测运动的微机电模具,其包括固定部分,联接到固定部分的锚固件,联接到锚固件在锚固件侧面上的锚固件的第一非线性悬挂构件,在相同侧面上联接到锚固件的第二非线性悬挂构件 所述第二非线性悬挂构件具有形状和位置,所述形状和位置使得所述第一非线性悬挂构件围绕锚平分截面平面化,并且所述校准块是平面的,所述证明块至少部分地由所述第一非线性悬置构件悬挂, 第二非线性悬挂构件,使得证明物质可绕锚固件旋转,并且可在平行于固定部分的平面中滑动。

    THROUGH SILICON VIA WITH REDUCED SHUNT CAPACITANCE
    2.
    发明申请
    THROUGH SILICON VIA WITH REDUCED SHUNT CAPACITANCE 审中-公开
    通过硅减少分流电容

    公开(公告)号:WO2012040245A2

    公开(公告)日:2012-03-29

    申请号:PCT/US2011/052417

    申请日:2011-09-20

    Abstract: This document refers to apparatus and methods for a device layer of a microelectromechanical system (MEMS) sensor having vias with reduced shunt capacitance. In an example, a device layer can include a substrate having a pair of trenches separated in a horizontal direction by a portion of the substrate, wherein each trench of the pair of trenches includes first and second vertical layers including dielectric, the first and second vertical layers separated by a third vertical layer including polysilicon.

    Abstract translation: 本文件涉及具有减小的分流电容的通​​孔的微机电系统(MEMS)传感器的器件层的装置和方法。 在一个示例中,器件层可以包括具有一对沟槽的衬底,该衬底具有沿着衬底的一部分在水平方向上分离的一对沟槽,其中该对沟槽的每个沟槽包括包括电介质的第一和第二垂直层,第一和第二垂直 层由包括多晶硅的第三垂直层隔开。

    CAPACITIVE MICRO- ELECTRO-MECHANICAL SENSORS WITH SINGLE CRYSTAL SILICON ELECTRODES
    7.
    发明申请
    CAPACITIVE MICRO- ELECTRO-MECHANICAL SENSORS WITH SINGLE CRYSTAL SILICON ELECTRODES 审中-公开
    具有单晶硅电极的电容式微机电传感器

    公开(公告)号:WO2007120576A2

    公开(公告)日:2007-10-25

    申请号:PCT/US2007/008599

    申请日:2007-04-04

    Abstract: The devices presented herein are capacitive sensors with single crysta silicon on all key stress points. Isolating trenches are formed by trench and refill forning dielectrically isolated conductive silicon electrodes for drive, sense and guards, For pressure sensing devices according to the invention, the pressure port is opposed to the e ectrical wire bond pads for ease of packaging. Dual-axis accelerometers measuring in plane acceleration and out of plane acceleration are also described. A third axis in plane is i easy to achieve by duplicating and rotating the accelerometer 90 degrees about its out of plane axis Creating resonant structures, angular rate sensors, bolometers, and many other structures are possible with this process technology. Key advantages are hermeti ity, vertical vias, vertical and horizontal gap capability, single crystal materials, wafejr level packaging, small size, high performance and low cost.

    Abstract translation: 本文中提出的器件是在所有关键应力点上具有单晶硅的电容式传感器。 隔离沟槽由沟槽形成,并且用于用于驱动,感测和保护的介电隔离的导电硅电极。对于根据本发明的压力感测装置,压力端口与电极引线接合焊盘相对以便于包装。 还描述了在平面加速度和平面外加速度测量的双轴加速度计。 平面上的第三轴是通过使加速度传感器围绕其平面外轴线90度重复和旋转来实现的。通过该工艺技术,可以创建谐振结构,角速率传感器,测辐射热计和许多其他结构。 主要优点是感性,垂直通孔,垂直和水平间隙能力,单晶材料,水平包装,体积小,性能高,成本低。

    INTEGRATED TIRE PRESSURE SENSOR SYSTEM
    8.
    发明申请
    INTEGRATED TIRE PRESSURE SENSOR SYSTEM 审中-公开
    集成轮胎压力传感器系统

    公开(公告)号:WO2007064961A2

    公开(公告)日:2007-06-07

    申请号:PCT/US2006/046132

    申请日:2006-11-30

    Abstract: The present invention provides a tire pressure sensor system that has multiple functions and is integrated into a small package. The system includes one or more Micro Electro Mechanical System (MEMS)-based sensors, including a MEMS-based pressure sensor; a MEMS-oscillator-based wireless signal transmitter; and a microcontroller, where the microcontroller processes the data generated by at least one of the MEMS-based sensors, controls at least one of the MEMS-based sensors, and controls the encoding and timing of transmission of data from the wireless signal transmitter. Preferably, the MEMS-based sensors, MEMS-oscillator-based wireless signal transmitter, and microcontroller are integrated onto one or more chips in one or more packages. The system also preferably includes a MEMS-based motion sensor, a low frequency (LF) receiver, an IC-based voltage sensor, a voltage regulator, a temperature sensor and a polarization voltage generator. Thus, the disclosed tire pressure sensor system is high in functionality, yet small in size.

    Abstract translation: 本发明提供一种轮胎压力传感器系统,其具有多种功能并被集成到小包装中。 该系统包括一个或多个基于微机电系统(MEMS)的传感器,包括基于MEMS的压力传感器; 基于MEMS振荡器的无线信号发射机; 以及微控制器,其中微处理器由至少一个基于MEMS的传感器产生的数据控制至少一个基于MEMS的传感器,并且控制来自无线信号发射器的数据传输的编码和定时。 优选地,基于MEMS的传感器,基于MEMS振荡器的无线信号发射器和微控制器集成到一个或多个封装中的一个或多个芯片上。 该系统还优选地包括基于MEMS的运动传感器,低频(LF)接收器,基于IC的电压传感器,电压调节器,温度传感器和极化电压发生器。 因此,所公开的轮胎压力传感器系统的功能性高,但体积小。

    MICROELECTROMECHANICAL PRESSURE SENSOR INCLUDING REFERENCE CAPACITOR
    9.
    发明申请
    MICROELECTROMECHANICAL PRESSURE SENSOR INCLUDING REFERENCE CAPACITOR 审中-公开
    微电子机械压力传感器,包括参考电容

    公开(公告)号:WO2012040211A2

    公开(公告)日:2012-03-29

    申请号:PCT/US2011/052369

    申请日:2011-09-20

    Inventor: BRYZEK, Janusz

    Abstract: This document discusses, among other things, an apparatus including a silicon die including a vibratory diaphragm, the die having a silicon die top opposite a silicon die bottom, with a top silicon die port extending from the silicon die top through the silicon die to a top of the vibratory diaphragm, and with a bottom silicon die port extending from the silicon die bottom to a bottom of the vibratory diaphragm, wherein the bottom silicon die port has a cross sectional area that is larger than a cross-sectional area of the top silicon die port, a capacitor electrode disposed along a bottom of the silicon die, across the bottom silicon die port, the capacitor electrode including a first signal generation portion that is coextensive with the top silicon die port, and a second signal generation portion surrounding the first portion.

    Abstract translation: 该文献尤其讨论了一种装置,该装置包括包含振动隔膜的硅晶片,该晶片具有与硅晶片底部相对的硅晶片顶部,顶部硅晶片端口从硅 通过硅晶片将晶粒顶部模制到振动膜的顶部,并且具有从硅晶粒底部延伸到振动膜的底部的底部硅晶粒端口,其中底部硅晶粒端口的横截面积大于 所述顶部硅管芯端口的横截面区域,沿所述硅管芯的底部设置的电容器电极,跨过所述底部硅管芯端口,所述电容器电极包括与所述顶部硅管芯端口共同延伸的第一信号生成部分, 以及围绕第一部分的第二信号生成部分。

    INERTIAL SENSOR MODE TUNING CIRCUIT
    10.
    发明申请
    INERTIAL SENSOR MODE TUNING CIRCUIT 审中-公开
    惯性传感器模式调谐电路

    公开(公告)号:WO2012040194A1

    公开(公告)日:2012-03-29

    申请号:PCT/US2011/052340

    申请日:2011-09-20

    Inventor: BRYZEK, Janusz

    CPC classification number: G01P15/08 G01C19/5776 G01C25/00

    Abstract: This document discusses, among other things, an mode matching circuit for a inertial sensor including an oscillator circuit configured to selectively couple to a sense axis of an inertial sensor and to provide sense frequency information of the sense axis, a frequency comparator configured to receive the sense frequency information of the sense axis and drive frequency information of the inertial sensor, and to provide frequency difference information to a processor, and a programmable bias source configured to apply a bias voltage to the sense axis to set a sense frequency of the sense axis in response to a command from the processor, and to maintain a desired frequency difference between the sense frequency and a drive frequency of the inertial sensor.

    Abstract translation: 本文件尤其涉及用于惯性传感器的模式匹配电路,其包括被配置为选择性地耦合到惯性传感器的感测轴并且提供感测轴的感测频率信息的振荡器电路,频率比较器被配置为接收 感测轴的感测频率信息和惯性传感器的驱动频率信息,并且向处理器提供频差信息,以及可编程偏置源,被配置为向感测轴施加偏置电压以设置感测轴的感测频率 响应于来自处理器的命令,并且保持感测频率和惯性传感器的驱动频率之间的期望的频率差。

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