公开(公告)号：WO9948136A3

公开(公告)日：1999-11-11

申请号：PCT/DE9900728

申请日：1999-03-14

Applicant: KELLER STEFFEN ,  FATH PETER ,  WILLEKE GERHARD

Inventor： KELLER STEFFEN ,  FATH PETER ,  WILLEKE GERHARD

IPC: H01L31/04 ,  H01L20060101 ,  H01L21/00 ,  H01L27/142 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/05 ,  H01L31/18

CPC classification number: H01L31/035281 ,  B64G1/443 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0508 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547 ,  Y10S439/954

Abstract: The invention relates to a solar cell arrangement consisting of series-connected solar subcells. Said solar subcells consist of a semiconductor wafer which forms a common base material for all of the solar subcells and wherein a number of recesses are provided for delimiting the individual, series-connected solar subcells. The invention is characterised in that at least some of the recesses extend from the top surface of the semiconductor wafer, through the wafer itself to the bottom surface and in that at most some bridge segments are left in continuation of the recesses as far as the wafer edge, to mechanically interconnect the solar subcells.

Abstract translation: 公开的是从形成一个共同的基体材料为所有太阳能子电池，并且其中设置在所述个体的划界多个凹部，在相互连接的系列太阳能子电池的半导体晶片形成串联连接的太阳能子电池的Solarzellenanordung。 这是其特征在于，至少一些所述半导体晶片的上表面的凹部的底面其通过晶片和最大一些桥段的延伸的留在凹部，以在晶片边缘的延续，以机械此，太阳能子电池彼此 连接。

公开(公告)号：WO2010052541A3

公开(公告)日：2010-10-07

申请号：PCT/IB2009007310

申请日：2009-11-04

Applicant: CT THERM PHOTOVOLTAICS TECHNOL ,  ESTURO-BRETON AINHOA ,  KELLER STEFFEN

Inventor： ESTURO-BRETON AINHOA ,  KELLER STEFFEN

IPC: H01L21/306 ,  H01L21/02 ,  H01L31/18

CPC classification number: H01L21/306 ,  H01L21/02052

Abstract: Oxidation and cleaning process for silicon wafers, in which the silicon wafers are provided with a silicon oxide layer on at least part of their surface (12; 24), before they are etched in an alkaline etching solution (14;, 26) and they are etched in a solution (16) which contains an acid which oxidises metallic impurities, whereby at least a portion of the silicon oxide layer is exposed unprotected to the etching solution and the acid, and in which the silicon wafers are rinsed in deionised water after the etching processes (18), whereby the at least one unprotected portion of the silicon oxide layer is at least partly left on the silicon wafers and the silicon wafers are dried (20) after rinsing (18; 32).

Abstract translation: 硅晶片的氧化和清洁过程，其中硅晶片在它们在碱性蚀刻溶液（14; 26）中蚀刻之前在其表面的至少一部分上提供有氧化硅层（12; 24），并且它们 在含有氧化金属杂质的酸的溶液（16）中被蚀刻，由此至少一部分氧化硅层未被保护地暴露于蚀刻溶液和酸，并且其中硅晶片在去离子水中被冲洗 蚀刻工艺（18），由此氧化硅层​​的至少一个未受保护部分至少部分地留在硅晶片上，并且在冲洗（18; 32）之后干燥硅晶片（20）。

公开(公告)号：WO2011107092A2

公开(公告)日：2011-09-09

申请号：PCT/DE2011075033

申请日：2011-03-03

Applicant: CENTROTHERM PHOTOVOLTAICS AG ,  TEPPE ANDREAS ,  GEIGER MATTHIAS ,  SCHLOSSER REINHOLD ,  MUENZER ADOLF ,  SCHOENE JAN ,  ISENBERG JOERG ,  KUEHN TINO ,  KELLER STEFFEN

Inventor： TEPPE ANDREAS ,  GEIGER MATTHIAS ,  SCHLOSSER REINHOLD ,  MUENZER ADOLF ,  SCHOENE JAN ,  ISENBERG JOERG ,  KUEHN TINO ,  KELLER STEFFEN

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/068 ,  H01L21/02587 ,  H01L21/02675 ,  H01L21/268 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

Abstract: The invention relates to a method for doping a semiconductor substrate (50), wherein the semiconductor substrate (50) is heated by irradiation (14) with laser radiation (60) and at the same time dopant from a dopant source (54) is diffused (16) into the semiconductor substrate (50) in heated regions (52), and wherein when the semiconductor substrate (50) is heated by the irradiation (14) with laser radiation (60), a surface portion of the semiconductor substrate (50) that is less than 10% of the total surface of all irradiated regions (62) is melted (18) and recrystallized (20). The invention further relates to a solar cell.

Abstract translation: （50）扩散的一种用于与激光辐射（60），而在被加热的区域（52）从在所述半导体衬底中的掺杂剂源（54）的掺杂剂掺杂的半导体衬底（50），其中所述半导体衬底（50）是通过照射（14）加热方法 （16），并且其中，在所述加热通过辐照（14）利用激光辐射在半导体基板（50）（60）包括一表面的半导体基片的熔融（20）部分（50）（18）和重结晶是小于10％ 所有暴露的区域的总面积（62），以及太阳能电池。

公开(公告)号：WO2011107094A2

公开(公告)日：2011-09-09

申请号：PCT/DE2011075036

申请日：2011-03-03

Applicant: CENTROTHERM PHOTOVOLTAICS AG ,  MUENZER ADOLF ,  TEPPE ANDREAS ,  SCHOENE JAN ,  SCHLOSSER REINHOLD ,  KELLER STEFFEN

Inventor： MUENZER ADOLF ,  TEPPE ANDREAS ,  SCHOENE JAN ,  SCHLOSSER REINHOLD ,  KELLER STEFFEN

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/0547 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: The invention relates to a method for producing a solar cell (70), wherein a layer stack (74, 76) of dielectric layers (74, 76) is applied (14, 16; 54, 56) to a back of a solar cell substrate (72) and the layer stack (74, 75) is heated and is held (20) at temperatures of at least 700°C during a time period of at least 5 minutes. The invention further relates to a solar cell (70).

Abstract translation: 层堆叠（74;用于制造太阳能电池（70），其特征在于，在太阳能电池基板（72），介电层的层堆叠（74,76）的背面侧（74，76）施加所述的方法（54，56 14，16） 加热75）和用于为至少700℃（20）和太阳能电池（70）的温度，持续至少5分钟保持。

公开(公告)号：WO2011085715A3

公开(公告)日：2012-08-16

申请号：PCT/DE2011000013

申请日：2011-01-11

Applicant: CENTROTHERM PHOTOVOLTAICS AG ,  TEPPE ANDREAS ,  GEIGER MATTHIAS ,  SCHLOSSER REINHOLD ,  ISENBERG JOERG ,  KUEHN TINO ,  MUENZER ADOLF ,  KELLER STEFFEN

Inventor： TEPPE ANDREAS ,  GEIGER MATTHIAS ,  SCHLOSSER REINHOLD ,  ISENBERG JOERG ,  KUEHN TINO ,  MUENZER ADOLF ,  KELLER STEFFEN

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  H01L31/068 ,  Y02E10/547 ,  Y02P70/521

Abstract: The invention relates to a method for creating a two-stage doping in a semiconductor substrate (80), wherein in a doping area (89) to be provided with the two-stage doping (90, 92), dopant is diffused into the semiconductor substrate (80) by means of heavy diffusion (10) and in this way a high surface concentration of dopant is created, and after the heavy diffusion (10) the semiconductor substrate (80) is locally heated (12) in areas (91) of the two-stage doping (90, 92) to be doped more heavily and an oxide layer (88) is created (16) on the doping area (89).

Abstract translation: 成由强扩散来提供形成在半导体衬底（80）的两级掺杂，其中，在所述两级掺杂（90，92）中的一个的方法，杂质区（89）（10）在所述半导体衬底（80）的掺杂剂被扩散，并在这 时，形成高表面浓度掺杂剂，强扩散（10）之后在两级掺杂（90，92）在半导体衬底（80）的更强烈的掺杂区域（91）被局部加热（12），并且在杂质区域（89） 形成氧化物层（88）（16）。

公开(公告)号：WO2010052565A3

公开(公告)日：2012-04-26

申请号：PCT/IB2009007380

申请日：2009-11-09

Applicant: CENTROTHERM PHOTOVOLTAICS AG ,  ESTURO-BRETON AINHOA ,  GEIGER MATTHIAS ,  KELLER STEFFEN ,  SCHLOSSER REINHOLD ,  VOYER CATHARINE ,  MAIER JOHANNES ,  BRESELGE MARTIN ,  MUENZER ADOLF ,  FRIESS TOBIAS ,  KUEHN TINO

Inventor： ESTURO-BRETON AINHOA ,  GEIGER MATTHIAS ,  KELLER STEFFEN ,  SCHLOSSER REINHOLD ,  VOYER CATHARINE ,  MAIER JOHANNES ,  BRESELGE MARTIN ,  MUENZER ADOLF ,  FRIESS TOBIAS ,  KUEHN TINO

IPC: H01L31/18 ,  H01L31/068

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  Y02E10/547 ,  Y02P70/521

Abstract: Method for manufacturing a solar cell with a two-stage doping (88, 89) including the following method steps of forming (14, 48) an oxide layer (82), which can be penetrated by a first dopant, on at least one part of the surface of a solar cell substrate (80), of forming (16; 50) an opening in the oxide layer (82) in at least one high-doping region (88) by removing (16; 50) the oxide layer (82) in this high-doping region (88), of diffusing (28) the first dopant into the at least one high- doping region (88) of the solar cell substrate (80) through the opening and of diffusing (28) the first dopant into the solar cell substrate (80) through the oxide layer (82), wherein the diffusing-in (28) through the openings and through the oxide layer (82) takes place at the same time in a common diffusion step and the solar cell substrate (80) is diffused (28) in the common diffusion step (28) in an at least partially hydrophilic state.

Abstract translation: 一种用于制造具有两级掺杂（88,89）的太阳能电池的方法，包括以下方法步骤：在至少一个部分上形成（14,48）可被第一掺杂剂渗透的氧化物层（82） 通过去除（16; 50）氧化物层（16; 50）在至少一个高掺杂区域（88）中在氧化物层（82）中形成（16; 50）开口的太阳能电池基板（80）的表面; 82）在该高掺杂区域（88）中通过开口将第一掺杂剂扩散（28）至太阳能电池基板（80）的至少一个高掺杂区域（88）并扩散（28） 第一掺杂剂通过氧化物层（82）进入太阳能电池基板（80），其中通过开口和通过氧化物层（82）的扩散（28）在公共扩散步骤中同时进行，并且 太阳能电池基板（80）在共同扩散步骤（28）中以至少部分亲水状态扩散（28）。

公开(公告)号：WO2012022329A3

公开(公告)日：2012-04-19

申请号：PCT/DE2011075152

申请日：2011-06-28

Applicant: CENTROTHERM PHOTOVOLTAICS AG ,  KUEHN TINO ,  TEPPE ANDREAS ,  FRIESS TOBIAS ,  ESTURO-BRETON AINHOA ,  KELLER STEFFEN

Inventor： KUEHN TINO ,  TEPPE ANDREAS ,  FRIESS TOBIAS ,  ESTURO-BRETON AINHOA ,  KELLER STEFFEN

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/18

CPC classification number: H01L29/34 ,  H01L21/268 ,  H01L31/02363 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: The invention relates to a method for locally removing a surface layer (36) which is applied to a texture (30) of a textured substrate, wherein the texture (30) has a multiplicity of structure elements (32) with structure tips (34) and/or structure edges, having the steps of locally irradiating the texture (30) through the surface layer (36) by means of laser radiation which at least partially penetrates through the surface layer (36) and which is at least partially absorbed by the texture (30), the intensity of which laser radiation is set such that the texture (30) is locally melted by means of the laser radiation and subsequently recrystallized (16), wherein the surface layer (36) is locally opened in the region of the structure tips (34) and/or of the structure edges such that the openings around the structure tips (34) and/or the structure edges after the local irradiation of the texture (30) are completely surrounded by continuous, non-open regions of the surface layer (36), and removing (18) the recrystallized regions (38) of the texture (30) in an etching step by means of an etching medium, wherein the surface layer (36) outside the recrystallized regions (38) is used as an etching mask against the etching medium, and to a solar cell (70).

Abstract translation: 一种用于局部去除的表面层（36），其被施加到织构的衬底的织构（30）的过程中，织构（30）包括多个结构元件（32），其具有结构顶部（34）和/或具有结构的边缘，其包括以下步骤 通过表面层的装置中的纹理（30）通过该表面层（36）的局部照射（36）至少部分地穿透和从纹理（30）至少部分地吸收激光辐射，其强度被设定为使得所述纹理（30）借助于 激光辐射局部熔化和下面（16）中重结晶，其特征在于，使得根据纹理（30）的局部照射到尖端的结构中的开口在结构尖端的区域中的表面层（36）（34）和/或结构边缘局部地打开的 （34）和/或围绕的表面层的连续的开放区域边缘结构（36）v 其中，从所述再结晶区域的表面层（36）远（38）用作抗蚀刻介质的蚀刻掩模通过蚀刻介质的装置在蚀刻步骤中的纹理（30）的再结晶区域（38）的包围ollständig，并除去（18），和 太阳能电池（70）。

公开(公告)号：WO2009012952A3

公开(公告)日：2009-04-09

申请号：PCT/EP2008005940

申请日：2008-07-21

Applicant: ABB AG ,  KRIPPNER PETER ,  WETZKO MANFRED ,  DISSELNKOETTER ROLF ,  GASCH ARMIN ,  SCHROLL CHRISTIAN ,  SZASZ PAUL ,  GRAF RALF ,  KELLER STEFFEN

Inventor： KRIPPNER PETER ,  WETZKO MANFRED ,  DISSELNKOETTER ROLF ,  GASCH ARMIN ,  SCHROLL CHRISTIAN ,  SZASZ PAUL ,  GRAF RALF ,  KELLER STEFFEN

IPC: H02B13/025

CPC classification number: H02B13/025 ,  H02H1/0023

Abstract: The invention relates to a system and method for predictive monitoring and for protection of electrical and/or electrical-engineering devices (1), in particular of a low-voltage switchgear assembly and/or its fittings, wherein at least one data processing device having an evaluation unit (2) is provided, which, in conjunction with at least one interface (4), detects information (6) of at least one measurement module (7), which is associated in the respective device and has a gas sensor (8), and carries out predictive processing objectively, with respect to early fault identification, in particular early arc identification and/or early fire identification.

Abstract translation: 本发明涉及一种系统和方法，用于主动监控和保护的电气和/或电子技术设备（1），特别是低压配电盘和/或它的内部，其特征在于，具有设置有至少一个数据处理设备的分析单元（2），其与至少一个交互 界面（4）的至少一个相应的装置测量模块（7）在被分配获取与气体传感器的信息（6）（8）和定位的，主动关于故障检测处理，特别是电弧检测和/或火灾探测。

公开(公告)号：WO2008077574A2

公开(公告)日：2008-07-03

申请号：PCT/EP2007011237

申请日：2007-12-20

Applicant: ABB PATENT GMBH ,  GEBHARDT JOERG ,  KASSUBEK FRANK ,  DEPPE LOTHAR ,  KELLER STEFFEN ,  FRIEDRICHS RENE

Inventor： GEBHARDT JOERG ,  KASSUBEK FRANK ,  DEPPE LOTHAR ,  KELLER STEFFEN ,  FRIEDRICHS RENE

IPC: G01F1/84 ,  G01F15/02 ,  G01F25/00

CPC classification number: G01F1/8477 ,  G01F1/8413 ,  G01F1/8436 ,  G01F15/02 ,  G01F25/0007

Abstract: The invention relates to a method for operating a vibratory measuring instrument, according to which a fluid medium can flow through at least one measuring tube (1) that can be mechanically vibrated by means of a vibration generating unit (4). The vibratory behaviour varying according to the flow and/or the viscosity and/or the density of the fluid medium is detected by means of at least one vibration sensor (5a, 5b) for determining the mass flow rate and/or the viscosity and/or the density in a narrow-band frequency range, the signals then being evaluated by an electronic unit (6). The invention is characterised in that the vibratory behaviour of the measuring tube (1) is also evaluated by the electronic unit (6) in a wide-band frequency region, in order to determine physical operating parameters for increasing the measuring precision and/or to correct transversal sensitivities and/or to obtain additional information about the state of the measuring instrument.

Abstract translation: 一种用于操作振动型的测量装置，位移，其中至少一个振动发生单元（4）为机械振动测量管的方法（1）由流体介质是durchfließbar，其中，所述流率和/或粘度和/或密度的函数 到振动特性由至少一个振动传感器改变流体介质的（5A，5B）被检测到，以确定在一个窄带频率范围中的质量流率和/或粘度和/或密度，并且然后通过电子单元（6）被用于信令目的评价，其特征在于 所述电子单元（6）的测量管（1）的振动行为在宽带频率范围被附加地评估，以确定补充物理操作参数，以提高测量精度和/或用于交叉敏感性和/或有关的补充信息的校正 仪表获得状态。