Abstract:
The present invention provides an electronic component mounting apparatus, wherein a high speed operation can be provided by simplifying the structure of a mounting head and wherein the working efficiency can be improved by eliminating the use of the mounting head for a coating process. In the electronic component mounting apparatus, a flux is coated on chips supplied to an electronic component feeding unit while bump formation faces are directed upward. The chips are mounted on a substrate. A holding head receives the chips extracted from an adhesive sheet by a mounting head and is inverted relative to a stage on which a flux is spread. As a result, the bumps of the chips are covered with the flux and are flattened, and after the holding head is returned to the original stage, the chips on the stage are extracted and mounted on the substrate by the mounting head.
Abstract:
In an electronic component mounting method in which electronic components are sucked/held by plural respective nozzles provided on a mounting head so as to be mounted on electronic component mounting portions of a board, such a mounting operation is sequentially carried out as to all of the electronic components, in which the electronic components, are sucked/held by the plural nozzles; an electronic component sucked/held by one of the plural nozzles is provisionally positioned above one electronic component mounting portion; both this electronic component and the electronic component mounting portion are observed by an observation head which is located between the board and the mounting head; a relative position detecting operation for detecting a relative positional relationship between this electronic component and the electronic component mounting portion is carried out as to all of the electronic components held by the mounting head; and the electronic component is positioned with respect to the electronic component mounting portion so as to be mounted thereon while the detected relative positional relationship is reflected
Abstract:
In a plasma treating apparatus, a ceramic porous substance having a three-dimensional network structure in which a frame portion (18a) formed of ceramic containing alumina is provided continuously like a three-dimensional network is used for the material of an electrode member (17) for the plasma treating apparatus to be attached to the front surface of a gas supplying port of an electrode for plasma generation, and a gas for plasma generation is caused to pass through a hole portion (18b) formed irregularly in the three-dimensional network structure. Consequently, the distribution of the gas to be supplied is made uniform to prevent an abnormal discharge so that uniform etching having no variation can be carried out.
Abstract:
An object is to provide a manufacturing method of a semiconductor chip, by which while a semiconductor wafer is not broken when the semiconductor wafer is transported before plasma dicing is carried out, a time required for the plasma dicing can be shortened, so that a manufacturing efficiency of the semiconductor chips can be improved. After a resist film 6 has been formed on a ground rear plane 1q of a semiconductor wafer 1, partial portions (6a and 1b) of cutting margin areas (6a, 1b, 1c, 3c) along dicing lines 2 are removed by a blade 13 corresponding to a mechanical cutting means, and thickness "t" of remaining cutting margin areas 1c of the semiconductor wafer 1 along a thickness direction thereof are made thinner, which never causes any problem when the semiconductor wafer 1 is transported. Thereafter, all of the remaining cutting margin areas (1c, 3a) are removed by performing a plasma etching process.
Abstract:
With use of a length-dimension of a second-line-segment of a unit-device-formation-region as an arrangement interval, a plurality of parallel lines are disposed in a device-formation-effective-region on a wafer so as to form a plurality of parallel-line-partition-regions, the unit-device-formation-regions are arranged in each of the parallel-line-partition-regions independently of and separately from other parallel-line-partition-regions so that the acquisition number of the unit-device-formation-regions is maximized, and an arrangement of the respective unit-device-formation-regions in the respective parallel-line-partition-regions is determined as an arrangement of the entire device-formation-effective-region.
Abstract:
In a plasma treating apparatus, a ceramic porous substance having a three-dimensional network structure in which a frame portion formed of ceramic containing alumina is provided continuously like a three-dimensional network is used for the material of an electrode member for the plasma treating apparatus to be attached to the front surface of a gas supplying port of an electrode for plasma generation, and a gas for plasma generation is caused to pass through a hole portion formed irregularly in the three-dimensional network structure. Consequently, the distribution of the gas to be supplied is made uniform to prevent an abnormal discharge so that uniform etching having no variation can be carried out.
Abstract:
On a mask placement-side surface of a semiconductor wafer in which a plurality of semiconductor devices are formed, a mask is placed, while dicing lines for dicing the semiconductor wafer into the respective separate semiconductor devices are defined and a surface of a flawed semiconductor device among the respective semiconductor devices is partially exposed, and then plasma etching is applied to the mask placement-side surface of the semiconductor wafer so as to dice the semiconductor wafer into the respective semiconductor devices along the defined dicing lines, and an exposed portion of the flawed semiconductor device is removed so as to form a removed portion as a flawed semiconductor device distinguishing mark.
Abstract:
In an electronic component mounting process for mounting electronic components (6) to a substrate (13), each of the electronic components (6) having an adhesive layer on a surface to be bonded to the substrate (13) is picked up with suction nozzle (33a) provided with individual heater (49), and a time taken for the mounting operation is so allotted that a first heating time (T1) of a duration from a moment when the suction nozzle (33a) comes into contact with the electronic component (6) for picking it up till another moment immediately before it begins a mounting motion to the substrate (13) is longer than a second heating time (T2) of a duration from the moment when the suction nozzle (33a) begins the mounting motion till another moment when it leaves the electronic component (6) mounted to the substrate (13).
Abstract:
The present invention provides an electronic component mounting apparatus, wherein a high speed operation can be provided by simplifying the structure of a mounting head and wherein the working efficiency can be improved by eliminating the use of the mounting head for a coating process. In the electronic component mounting apparatus, a flux is coated on chips supplied to an electronic component feeding unit while bump formation faces are directed upward. The chips are mounted on a substrate. A holding head receives the chips extracted from an adhesive sheet by a mounting head and is inverted relative to a stage on which a flux is spread. As a result, the bumps of the chips are covered with the flux and are flattened, and after the holding head is returned to the original stage, the chips on the stage are extracted and mounted on the substrate by the mounting head.
Abstract:
After a film layer 6 formed from a die attach film 4 and a UV tape 5 has been provided as a mask on a semiconductor wafer 1, boundary trenches 7 for partitioning semiconductor elements 2 formed on a circuit pattern formation surface 1a are formed in the film layer 6, thereby making a surface 1c of a semiconductor wafer 1 exposed. The exposed surface 1c of the semiconductor wafer 1 in the boundary trenches 7 is etched by means of plasma of a fluorine-based gas, and the semiconductor wafer 1 is sliced into semiconductor chips 1' along the boundary trenches 7.