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公开(公告)号:WO2002073687A3
公开(公告)日:2002-09-19
申请号:PCT/US2002/003807
申请日:2002-02-08
Applicant: MOTOROLA, INC.
Inventor: MUI, Kok, Wai , HARUN, Fuaida, Bte , TAN, Lan, Chu , MOHD NOR, Mohd, Faizairi, Bin
IPC: H01L21/60
Abstract: A method of preparing a semiconductor wafer having a integrated circuits formed on it that have pads formed of copper includes the steps of removing oxide from the copper pads and then the vacuum packing the wafer in a shock-proof container. The oxide may be removed from the copper pads in a number of ways. A first way includes cleaning the wafer in an alkaline solution, performing acid neutralization on the cleaned wafer, and then drying the wafer. A second way includes cleaning the wafer with an acid solution, rinsing the acid cleaned wafer with water, applying an anti-oxidant activator to the surface of the copper pads, rinsing the wafer with water after the application of the anti-oxidant activator, and then drying the water rinsed wafer. Yet a third way includes plasma cleaning the copper pads using a combination of about 5-10% Hydrogen and about 90-95% Argon and then sputtering a very thin layer of aluminum on a surface of the copper pads. The layer of aluminum has a thickness of about 1-5 nanometers.
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公开(公告)号:WO2004040659A1
公开(公告)日:2004-05-13
申请号:PCT/US2003/030858
申请日:2003-09-30
Applicant: MOTOROLA, INC.
Inventor: FOONG, Chee, Seng , MUI, Kok, Wai , TAN, Kin, Heng , TAN, Lan, Chu
IPC: H01L31/0203
CPC classification number: H01L27/14634 , H01L27/14618 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/73265 , H01L2924/15311 , H01L2924/16195 , H01L2924/00014
Abstract: An image sensor device is made using an ultra-thin substrate so that the overall device height is less than 1.0 mm. The image sensor includes a flexible circuit substrate having first and second opposing sides, the first side having a central area and an outer, bonding pad area including bonding pads. A sensor integrated circuit (IC) is attached to the central area of the first side of the circuit substrate. The IC has an active area and a peripheral bonding pad area including bonding pads. Wires are wirebonded to respective ones of the IC bonding pads and corresponding ones of the circuit substrate bonding pads to electrically connect the IC and the circuit substrate. A wall having a first end with a step and a second end has its second end attached to an outer portion beyond the outer bonding pad area of the first side of the flexible circuit substrate. The wall at least partially surrounds the sensor integrated circuit. A transparent cover is located above the IC such that light can pass through the cover onto the IC active area. Opposing edges of the cover are secured within the step of the wall. Solder balls are attached to the second side of the circuit substrate. The circuit substrate provides for electrical interconnect between the solder balls and the bonding pads on the first side of the circuit substrate.
Abstract translation: 使用超薄基板制造图像传感器装置,使得整个装置高度小于1.0mm。 图像传感器包括具有第一和第二相对侧的柔性电路基板,第一侧具有包括接合焊盘的中心区域和外部焊接区域。 传感器集成电路(IC)附接到电路基板的第一侧的中心区域。 IC具有包括接合焊盘的有源区和外围接合焊盘区域。 电线与各个IC接合焊盘和对应的电路衬底接合焊盘引线接合,以电连接IC和电路衬底。 具有台阶和第二端的第一端的壁的第二端具有附接到柔性电路基板的第一侧的外部焊盘区域外部的外部部分。 墙壁至少部分地围绕传感器集成电路。 透明盖位于IC上方,使得光可以通过盖到IC活动区域。 盖的相对边缘固定在墙壁的台阶内。 焊球附接到电路基板的第二侧。 电路基板提供焊球和电路基板第一面上的接合焊盘之间的电互连。
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公开(公告)号:WO2002073687A2
公开(公告)日:2002-09-19
申请号:PCT/US2002/003807
申请日:2002-02-08
Applicant: MOTOROLA, INC.
Inventor: MUI, Kok, Wai , HARUN, Fuaida, Bte , TAN, Lan, Chu , MOHD NOR, Mohd, Faizairi, Bin
IPC: H01L21/60
CPC classification number: H01L24/05 , H01L21/31111 , H01L21/31122 , H01L21/32134 , H01L23/3107 , H01L24/03 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L2224/0381 , H01L2224/04042 , H01L2224/05647 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48463 , H01L2224/48465 , H01L2224/4847 , H01L2224/48647 , H01L2224/48747 , H01L2224/48847 , H01L2224/73265 , H01L2224/85011 , H01L2224/85013 , H01L2224/85203 , H01L2224/85205 , H01L2224/92247 , H01L2224/94 , H01L2924/00014 , H01L2924/01006 , H01L2924/01007 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01029 , H01L2924/01047 , H01L2924/01074 , H01L2924/01076 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , Y10S438/905 , H01L2224/78 , H01L2924/00 , H01L2924/00012 , H01L2224/03
Abstract: A method of preparing a semiconductor wafer having a integrated circuits formed on it that have pads formed of copper includes the steps of removing oxide from the copper pads and then the vacuum packing the wafer in a shock-proof container. The oxide may be removed from the copper pads in a number of ways. A first way includes cleaning the wafer in an alkaline solution, performing acid neutralization on the cleaned wafer, and then drying the wafer. A second way includes cleaning the wafer with an acid solution, rinsing the acid cleaned wafer with water, applying an anti-oxidant activator to the surface of the copper pads, rinsing the wafer with water after the application of the anti-oxidant activator, and then drying the water rinsed wafer. Yet a third way includes plasma cleaning the copper pads using a combination of about 5-10% Hydrogen and about 90-95% Argon and then sputtering a very thin layer of aluminum on a surface of the copper pads. The layer of aluminum has a thickness of about 1-5 nanometers.
Abstract translation: 制备具有形成在其上的具有由铜形成的焊盘的集成电路的半导体晶片的方法包括以下步骤:从铜焊盘去除氧化物,然后将晶片真空包装在防震容器中。 可以以多种方式从铜焊盘去除氧化物。 第一种方法包括在碱性溶液中清洗晶片,在清洁的晶片上进行酸中和,然后干燥晶片。 第二种方法包括用酸溶液清洗晶片,用水冲洗酸洗的晶片,将抗氧化剂活化剂施加到铜垫的表面上,在施用抗氧化剂活化剂之后用水冲洗晶片;以及 然后干燥水冲洗的晶片。 第三种方法包括使用约5-10%氢气和约90-95%氩气的组合等离子体清洗铜焊盘,然后在铜焊盘的表面上溅射非常薄的铝层。 铝层的厚度约为1-5纳米。
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