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公开(公告)号：WO1998006136A1
公开(公告)日：1998-02-12
申请号：PCT/DE1997001624
申请日：1997-07-31
IPC分类号： H01L29/78
CPC分类号： H01L29/0653 , H01L29/7391 , H01L29/7395 , H01L29/7827
摘要： The invention concerns a semiconductor device that can be controlled by the field effect comprising a first zone of a first conduction type, at least one gate electrode of polycristalline silicon, insulated from the first zone, at least one source/emitter region built into the first zone, in which the source/emitter region has a first region of the first conduction type which is built into the first zone and connected to a source/emitter terminal, a second region made of insulating material is disposed beneath the first region and has a greater ground area than the first region.
摘要翻译： 具有第一导电类型的第一区，至少一个选自由其从第一区绝缘的多晶硅栅极电极的场效应可控半导体元件，至少一个被引入到第一区的源极/发射极区，所述源极/发射极区的第一中 其底部的区已引入其被连接到源极/发射极的第一导电类型的第一区域，第二区域被布置绝缘Marerial所述第一区域下方的，比所述第一区域的基础面积。
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公开(公告)号：WO1995024055A1
公开(公告)日：1995-09-08
申请号：PCT/EP1995000679
申请日：1995-02-24
IPC分类号： H01L29/10
CPC分类号： H01L29/7802 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/66068 , H01L29/7396 , H01L29/7397 , H01L29/7813
摘要： The MIS structure contains an n-drift region (1), a base region (3) arranged on one surface of the drift region (1), an ion-implanted n source region (2) in the base region (3), a source electrode (S) short-circuiting the base (3) and source regions (2) and a gate electrode (6) to control the resistance of a channel region (32) of the base region (3) via an insulator region (5). The base region (3) is more highly doped in an ion-implanted p partial region (33) beneath the entire source region (2) than in the channel region (32).
摘要翻译： DIS MIS结构包括n型漂移区（1），一个在所述漂移区的表面（1）设置基极区域（3）到所述基极区域（3）离子注入的n <+> - 源区（2），基极区域（3 ）和源极区（2）短闭源电极（S）和用于在绝缘体上区域控制基极区域（3）的沟道区（32）的电阻的栅电极（6）（5）。 在离子注入的p <+> - 整个源极区下方的部分区域（33）（2）的基极区域（3）的掺杂比在沟道区（32）更高。
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公开(公告)号：WO1998012815A1
公开(公告)日：1998-03-26
申请号：PCT/DE1997001575
申请日：1997-07-25
IPC分类号： H03K17/082
CPC分类号： H03K17/0822 , H03K2017/0806 , Y10T307/773
摘要： The invention relates to an electric switching component with two temperature sensors (6, 7). The first temperature sensor (6) is located at the warmest point of the component and switches the component off when a first upper temperature threshold value (T1) has been reached and turns said component on again when temperature falls below a second lower theshold value (T2). The oscillation arising from the first temperator sensor (6) is switched on and off by the second temperature sensor (7) which is located away from the first temperature sensor (6) in a slightly less warm place and has lower threshold values (T3,T4) than the first temperature sensor.
摘要翻译： 本发明涉及一种包括两个温度传感器（6,7）的电气开关设备。 所述第一温度传感器（6）在操作中的部件的最温暖的点被提供，并且当其达到第一上阈值断开的装置中，并再次低于上的第二，较低的阈值（T2）（T1）下降时。 这种振荡由于第一温度传感器（6）由所述第二温度传感器（7）接通和关断，其由所述第一温度传感器布置（6）在比第一温度传感器（6）和下限阈值（T3不太温暖的地方被去除， T4）（作为第一温度传感器6）。
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公开(公告)号：WO1997041604A1
公开(公告)日：1997-11-06
申请号：PCT/DE1997000719
申请日：1997-04-09
IPC分类号： H01L29/78
CPC分类号： H01L29/7836 , H01L29/1083 , H01L29/7831
摘要： The invention relates to a MOS transistor structure which displaces the current path in the drain zone from the surface to deep within. In the embodiment according to the invention a deflection zone is arranged in the drain region below the drain spacer. In another embodiment, a deflection electrode instead of a deflection zone is incorporated in the drain spacer.
摘要翻译： 本发明提出的MOS晶体管结构，其从所述表面转移在漏极区中的电流路径进入的深度。 在一个根据本发明实施例中，偏转区被布置在所述漏极间隔物下面的漏区。 在另一个实施例中，在排水间隔的偏转电极被集成而不是转向区。
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公开(公告)号：WO1998012814A1
公开(公告)日：1998-03-26
申请号：PCT/DE1997001559
申请日：1997-07-23
IPC分类号： H03K05/24
CPC分类号： H03K17/0822 , H03K5/2481
摘要： The invention relates to a CMOS comparator wherein four p-channel lateral high voltage transistors (T11-T14) form two first current mirrors and two n-channel lateral high voltage transistors form a second current mirror. A depletion transistor (T2) located in the current path of the reference voltage determines the current flowing there. If the input voltage (UIN) is equal to the reference voltage (URef) the same current flows in both current paths. If the input voltage (UIN) deviates from the reference voltage (URef) the output voltage is modified substantially.
摘要翻译： 本发明涉及一种CMOS比较器，其中所述具有两个第一电流镜和两个n沟道侧面高电压晶体管（T31，T32）4个p沟道侧面高电压晶体管（T11-T14）形成第二电流镜。 在参考电压的电流路径，一个耗尽型晶体管（T2），其确定流有电流。 如果输入电压（UIN）等于参考电压（U参考），所以流动在两个电流路径，相同的电流。 但偏离的基准电压（U REF）的输入电压（UIN），所以输出电压变化很大。
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公开(公告)号：WO1997044900A1
公开(公告)日：1997-11-27
申请号：PCT/DE1997000940
申请日：1997-05-09
IPC分类号： H03K17/10
CPC分类号： H03K17/6871 , H02M3/33569 , H02M2001/0006 , H03K17/102
摘要： This invention concerns a combinational circuit device comprising a power MOS-FET, the load link of which is connected in series to a wire wound coil of a repeater, as well as a gate voltage supply circuit, the output signal of which is directed to the gate terminal of the power MOS-FET, in which the power MOS-FET (1) is a high voltage MOS-FET and there are a second MOS-FET (2), the load link of which is connected in series to the load link of high voltage MOS-FET (1) with low ohm construction, and a control circuit (14), which is fed from the signal applied to the gate terminal (G1) of the high voltage MOS-FET (1) and produces a signal for controlling the second MOS-FET (2).
摘要翻译： 开关电源的功率MOSFET，其负载路径串联连接有线圈绕组的变压器，以及栅极电压供应电路，其输出信号被提供到功率MOSFET的栅极，功率MOSFET（1）是一种高电压MOSFET和第二 MOSFET（2）被提供，其负载路径串联连接在高电压MOSFET的负载路径（1）和其低阻抗的形成，从高电压MOSFET的栅极端子（G1）抵接的控制电路（14）（1） 信号的供给和生成用于驱动所述第二MOSFET（2）的信号。
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公开(公告)号：WO1997035346A1
公开(公告)日：1997-09-25
申请号：PCT/DE1997000528
申请日：1997-03-14
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/0878 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/7813
摘要： The field effect-controllable semiconductor component has a drain zone of the first conductivity type and also at least one gate electrode which is composed of polycrystalline silicon and is insulated from the drain zone. A source region of the second conductivity type is introduced in the drain zone. In addition, there is formed in the drain zone a trench structure, which reach from the surface of the epitaxial layer down into the substrate layer. An additional field plate made of polysilicon and embedded in an oxide layer is introduced in the trench structure. The thickness of the oxide surrounding the field plate increases down in a direction towards the drain.
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公开(公告)号：WO1997029518A1
公开(公告)日：1997-08-14
申请号：PCT/DE1997000182
申请日：1997-01-30
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L21/2257 , H01L29/0623 , H01L29/0634 , H01L29/0653 , H01L29/0878 , H01L29/1095 , H01L29/402 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/7396 , H01L29/7802 , H01L29/7835
摘要： The invention concerns a semiconductor component controllable through field effect with a vertical or lateral construction, i.e. MOSFETs and IGBTs. In the source-drain loading stage, recessed zones and complementary zones of opposing conducting types are made in the semiconductor body, i.e. in the inner zone for vertical components and in the drift zone for lateral components, the concentration in the regions doped by the first conducting type corresponding approximately to the concentration in the regions doped by the second conducting type.
摘要翻译： 本发明涉及一种可控制的由场效应半导体器件在垂直方向或横向结构，即 MOSFET和IGBT。 有，在半导体主体在作为源极 - 漏极负载路径 在内部区域和所述漂移区的横向元件，以及相反的导电类型的互补的耗尽区，其中所述第一导电类型的掺杂区域的浓度近似地对应于掺杂的第二导电类型区的浓度垂直组件引入。
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9.发明申请PROCESS FOR ESTABLISHING A CONNECTION BETWEEN A FIXED AND SEVERAL MOBILE ELEMENTS IN A CORDLESS TELEPHONE SYSTEM 审中-公开在无线电话系统中建立固定和几个移动元件之间的连接的过程
公开(公告)号：WO1989011765A1
公开(公告)日：1989-11-30
申请号：PCT/EP1989000555
申请日：1989-05-19
发明人： SIEMENS AKTIENGESELLSCHAFT ÖSTERREICH , SIEMENS AKTIENGESELLSCHAFT , FORER, Josef , TREITL, Karl , BABOL, Boguslaw
IPC分类号： H04M01/72
CPC分类号： H04M1/72511
摘要： A cordless telephone has several mobile elements (MTn) allocated to a fixed element (FT). In order to establish a connection between the fixed element (FT) and one of the mobile elements (MTn), an incoming call (AR) is converted to an outgoing call. The exchange of the required communication data occurs exclusively over speech channels. An identification code with group or individual identification is emitted by the fixed element (FT) as an identification message (KMn) with a call message (RM). The call is signalled by the mobile parts (MTn) connected to one group. Call-indicator messages (RAM) are sent back one by one on a free channel. The fixed element (FT) monitors the channels until an established-connection message (VAM) is sent by a mobile element (MTn), a fork switch having been actuated. Said mobile part (MTn) thereby initiates the establishment of a connection. The fixed part (FT) can also call one mobile part (MTn) after another individually. Each mobile part (MTn) sends back on the same channel the call-indicator message (RAM) and, after the fork switch has been actuated, the established-connection message (VAM).
摘要翻译： 无绳电话具有分配给固定元件（FT）的几个移动元件（MTn）。 为了在固定元件（FT）和移动元件（MTn）之一之间建立连接，来电（AR）被转换为去话呼叫。 所需通信数据的交换仅在语音信道上发生。 具有组或个人标识的识别码由固定元件（FT）作为具有呼叫消息（RM）的标识消息（KMn）发出。 呼叫由连接到一个组的移动部分（MTn）发出信号。 呼叫指示符消息（RAM）在空闲频道上逐个发送回来。 固定元件（FT）监视通道，直到建立的连接消息（VAM）由移动元件（MTn）发送，叉开关已被致动。 所述移动部分（MTn）由此启动建立连接。 固定部分（FT）也可以单独调用一个移动部分（MTn）。 每个移动部分（MTn）在相同的信道上发回呼叫指示符消息（RAM），并且在叉交换机被激活之后，建立连接消息（VAM）。
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公开(公告)号：WO1992016890A1
公开(公告)日：1992-10-01
申请号：PCT/EP1992000366
申请日：1992-02-21
IPC分类号： G06F03/12
CPC分类号： G06F9/4411 , G06F3/1297 , G06F15/177
摘要： Programming a computer-connectable peripheral is simplified thanks to a process for selecting and programming the functions of such a peripheral. This process also allows the programming and selecting steps to become automatic.
摘要翻译： 通过选择和编程这种外设的功能的过程，可简化对计算机可连接外设的编程。 该过程还允许编程和选择步骤变为自动。
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