公开(公告)号：WO2015030802A1

公开(公告)日：2015-03-05

申请号：PCT/US2013/057604

申请日：2013-08-30

Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, LP

Inventor： MCKAY JR, Roger A ,  SADIK, Patrick Wayne

IPC: B81C1/00 ,  H01L21/302 ,  H01L21/306

CPC classification number: C23F1/16 ,  B41J2/1609 ,  B41J2/1629 ,  B41J2/1631 ,  B81B2201/052 ,  B81C1/00119

Abstract: An example provides a method including providing a substrate including an area having a plurality of pores and etching the area of the substrate to remove the plurality of pores to form a recess in the substrate. In some examples, the recess may form, at least in part, a device.

Abstract translation: 一个实例提供了一种方法，包括提供包括具有多个孔的区域的基板并蚀刻基板的区域以去除多个孔以在基板中形成凹部。 在一些示例中，凹部至少部分地形成设备。

公开(公告)号：WO2007041748A1

公开(公告)日：2007-04-19

申请号：PCT/AU2005/001565

申请日：2005-10-10

Applicant: SILVERBROOK RESEARCH PTY LTD ,  SILVERBROOK, Kia

Inventor： SILVERBROOK, Kia

IPC: B81C1/00 ,  B41J2/05 ,  B41J2/16

CPC classification number: B41J2/1404 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11 ,  B81B2201/032 ,  B81B2201/052 ,  B81B2203/0109 ,  B81C1/00611 ,  B81C2201/0108 ,  B81C2201/0126

Abstract: A method of forming a suspended beam in a MEMS process is disclosed. In the process a pit (8) is etched into a substrate (5). Sacrificial material (10) is deposited in the pit (8) and on the surrounding substrate surface. The sacrificial material (10) is then removed from the surrounding substrate surface and from the periphery of the pit (8) so that there is a gap between the sacrificial material and at least two sidewalls of the pit. The sacrificial material is then heated so that it reftows such that the remaining sacrificial material contacts the sidewalls of the pit. Material for the beam (12), which is typically a metal, is then deposited on the substrate surface and the reflowed sacrificial material, and the sacrificial material is then removed to form the suspended beam. The beam could be used as the heating element in an inkjet printer.

Abstract translation: 公开了一种在MEMS工艺中形成悬挂梁的方法。 在该过程中，凹坑（8）被蚀刻到衬底（5）中。 牺牲材料（10）沉积在凹坑（8）中和周围的基底表面上。 然后将牺牲材料（10）从周围的衬底表面和凹坑（8）的周边移除，使得在牺牲材料和凹坑的至少两个侧壁之间存在间隙。 然后将牺牲材料加热，使得其牺牲使得剩余的牺牲材料接触凹坑的侧壁。 然后将通常为金属的梁（12）的材料沉积在衬底表面和回流牺牲材料上，然后去除牺牲材料以形成悬挂梁。 该光束可用作喷墨打印机中的加热元件。

公开(公告)号：WO2014100732A1

公开(公告)日：2014-06-26

申请号：PCT/US2013/077252

申请日：2013-12-20

Applicant: MICRONICS, INC.

Inventor： KOLB, Andrew ,  SPRAGUE, Isaac ,  KAY, Justin, L. ,  BRAGD, Matthew, Scott ,  STONE, Martha

IPC: F15C3/04

CPC classification number: B01L3/50273 ,  B01L3/502707 ,  B01L3/502738 ,  B01L2200/0689 ,  B01L2200/12 ,  B01L2300/0816 ,  B01L2300/0874 ,  B01L2300/0887 ,  B01L2300/123 ,  B01L2400/0481 ,  B01L2400/0487 ,  B01L2400/0638 ,  B01L2400/0655 ,  B29C43/021 ,  B29C65/16 ,  B29K2101/00 ,  B29L2009/00 ,  B29L2031/7496 ,  B81B2201/052 ,  B81C1/00119 ,  F04B43/043 ,  F16K99/0015 ,  F16K99/0059 ,  F16K2099/0078 ,  F16K2099/008 ,  F16K2099/0084 ,  F16K2099/0086 ,  Y10T156/1026

Abstract: Fluidic cartridges, and manufacture thereof, having a plurality of circuit element subtypes containing pneumatically operated diaphragm members, where the diaphragm materials are selected for yield point, chemical resistance, breathability and other properties individually according to the fluidic element subtype are provided. A process of in-situ edge-bonded decoupage for forming diaphragm members inside a cartridge, and fluidic circuits having diaphragm members as active and passive circuit elements, including pumps, valves, vents, waste receptacles, reagent reservoirs, and cuvettes with optical windows, where the material composition of each individual diaphragm member may be selected from an assortment of materials during manufacture are also provided.

Abstract translation: 提供具有包含气动操作的隔膜部件的多个电路元件亚型的流体盒及其制造，其中根据流体元件亚型分别选择隔膜材料用于屈服点，耐化学性，透气性和其它性质。 一种用于在筒内形成膜片构件的原位边缘粘合去耦的过程，以及具有作为主动和被动电路元件的隔膜构件的流体回路，包括泵，阀，通风口，废物容器，试剂储存器和具有光学窗口的比色杯， 其中还提供了每个单独隔膜构件的材料组成可以在制造期间从各种材料中选择。

公开(公告)号：WO2010035035A3

公开(公告)日：2010-08-26

申请号：PCT/GB2009051246

申请日：2009-09-24

Applicant: CAMBRIDGE ENTPR LTD ,  SCOTT JAMES FLOYD ,  FAN HONGJIN

Inventor： SCOTT JAMES FLOYD ,  FAN HONGJIN

IPC: B81B7/04

CPC classification number: B81B7/04 ,  A61B5/0059 ,  B41J2/1429 ,  B81B2201/052 ,  B81B2201/06 ,  G01J3/10 ,  G01J3/42 ,  G01N21/3581

Abstract: An array of microtubes upwardly extending from a supporting base of substrate material is provided, in which the tubes comprise at least one concentric layer comprising a metallic oxide and at least one concentric layer comprising a piezoelectric and/or ferroelectric material. The array is made by lining the walls of pores in the substrate material sequentially with metallic oxide and piezoelectric and/or ferroelectric material and then removing part but not all of the substrate material. The arrays may be used in a variety of applications including liquid delivery and as microelectronic components. A method of generating terahertz emission is also provided.

Abstract translation: 提供从衬底材料的支撑基底向上延伸的微管阵列，其中管包括包含金属氧化物的至少一个同心层和包括压电和/或铁电材料的至少一个同心层。 该阵列通过依次用金属氧化物和压电和/或铁电材料衬在基底材料中的孔壁，然后除去部分而不是全部基底材料制成。 阵列可以用于各种应用，包括液体输送和微电子部件。 还提供了一种产生太赫兹发射的方法。

公开(公告)号：WO2006037151A2

公开(公告)日：2006-04-13

申请号：PCT/AU2005001438

申请日：2005-10-04

Applicant: SILVERBROOK RES PTY LTD ,  MCREYNOLDS DARRELL LARUE ,  SILVERBROOK KIA

Inventor： MCREYNOLDS DARRELL LARUE ,  SILVERBROOK KIA

CPC classification number: H01L21/02057 ,  B41J2/1412 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/164 ,  B81B2201/052 ,  B81B2203/033 ,  B81C1/00849 ,  B81C2201/0112 ,  B81C2201/0132

Abstract: A method of removing a polymeric coating from sidewalls of an etched trench defined in a silicon wafer is provided. The method comprises etching the wafer in a biased plasma etching chamber using an O2 plasma. The chamber temperature is in the range of 90 to 180 °C.

Abstract translation: 提供从硅晶片中限定的蚀刻沟槽的侧壁去除聚合物涂层的方法。 该方法包括使用O 2等离子体在偏压等离子体蚀刻室中蚀刻晶片。 室温度在90至180℃的范围内。

公开(公告)号：WO2016131657A1

公开(公告)日：2016-08-25

申请号：PCT/EP2016/052318

申请日：2016-02-03

Applicant: MEMJET TECHNOLOGY LIMITED

Inventor： NORTH, Angus ,  O'REILLY, Ronan ,  MCAVOY, Gregory

IPC: B41J2/16 ,  B81C1/00

CPC classification number: B81C1/00611 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/052 ,  B81B2203/0353 ,  B81C2201/0104 ,  B81C2201/0121

Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.

Abstract translation: 一种用于填充限定在晶片衬底的前表面中的一个或多个蚀刻孔的工艺。 该方法包括以下步骤：（i）将热塑性第一聚合物层沉积到前表面和每个孔中; （ii）回流第一聚合物; （iii）将晶片衬底暴露于受控氧化等离子体; （iv）任选地重复步骤（i）至（iii）; （v）沉积可光成像的第二聚合物层; （vi）使用曝光和显影从所述孔的外周边区域选择性地除去所述第二聚合物; 和（vii）平面化前侧表面以提供填充有彼此不同的第一和第二聚合物的塞子的孔。 每个插头具有与前侧表面共面的相应的上表面。

公开(公告)号：WO2011022749A1

公开(公告)日：2011-03-03

申请号：PCT/AU2009/001088

申请日：2009-08-25

Applicant: SILVERBROOK RESEARCH PTY LTD ,  FU, Yao ,  TSAI, Yi-Wen ,  MCREYNOLDS, Darrell LaRue ,  SECKER, David ,  BORDELANNE, Valerie ,  WISZNIEWSKI, Witold

Inventor： FU, Yao ,  TSAI, Yi-Wen ,  MCREYNOLDS, Darrell LaRue ,  SECKER, David ,  BORDELANNE, Valerie ,  WISZNIEWSKI, Witold

IPC: H01L21/311 ,  B41J2/16 ,  G03F7/42

CPC classification number: B41J2/16 ,  B41J2/14137 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1642 ,  B81B2201/052 ,  B81C1/00476 ,  G03F7/427 ,  H01L21/31138

Abstract: A method of photoresist removal with concomitant de-veiling is provided. The method employs a plasma formed from a gas chemistry comprising O 2 , NH 3 and a fluorine-containing gas, such as CF 4 . The method is particularly suitable for use in MEMS fabrication processes, such as inkjet printhead fabrication.

Abstract translation: 提供了一种同时进行光刻胶去除的方法。 该方法采用由包含O 2，NH 3和含氟气体如CF 4的气体化学物质形成的等离子体。 该方法特别适用于MEMS制造工艺，例如喷墨打印头制造。

公开(公告)号：WO2010035035A2

公开(公告)日：2010-04-01

申请号：PCT/GB2009/051246

申请日：2009-09-24

Applicant: CAMBRIDGE ENTERPRISE LIMITED ,  SCOTT, James Floyd ,  FAN, Hongjin

Inventor： SCOTT, James Floyd ,  FAN, Hongjin

IPC: B81B1/00

CPC classification number: B81B7/04 ,  A61B5/0059 ,  B41J2/1429 ,  B81B2201/052 ,  B81B2201/06 ,  G01J3/10 ,  G01J3/42 ,  G01N21/3581

Abstract: An array of microtubes upwardly extending from a supporting base of substrate material is provided, in which the tubes comprise at least one concentric layer comprising a metallic oxide and at least one concentric layer comprising a piezoelectric and/or ferroelectric material. The array is made by lining the walls of pores in the substrate material sequentially with metallic oxide and piezoelectric and/or ferroelectric material and then removing part but not all of the substrate material. The arrays may be used in a variety of applications including liquid delivery and as microelectronic components. A method of generating terahertz emission is also provided.

Abstract translation: 提供了从基底材料的支撑基底向上延伸的微管的阵列，其中管包括至少一个包含金属氧化物的同心层和至少一个包含压电和/或 铁电材料。 该阵列通过用金属氧化物和压电和/或铁电材料依次衬底衬底材料中的孔的壁，然后除去部分衬底材料而非全部衬底材料而制成。 阵列可用于各种应用，包括液体输送和微电子元件。 还提供了产生太赫兹辐射的方法。

公开(公告)号：WO2009018304A3

公开(公告)日：2009-04-16

申请号：PCT/US2008071533

申请日：2008-07-30

Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  BHOWMIK SIDDHARTHA ,  KELLY STEVEN E

Inventor： BHOWMIK SIDDHARTHA ,  KELLY STEVEN E

IPC: B41J2/05 ,  B81B7/04

CPC classification number: B81B3/0072 ,  B41J2/1601 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1642 ,  B81B2201/052

Abstract: The present invention provides a semiconductor device for a thermal inkjet (TIJ) device or a micro-electromechanical systems (MEMS) device. The device comprises a silicon wafer substrate having a front side and a back side, and a silicon nitride layer on the back side of the silicon wafer substrate.

Abstract translation: 本发明提供了一种用于热喷墨（TIJ）器件或微机电系统（MEMS）器件的半导体器件。 该装置包括具有正面和背面的硅晶片衬底，以及在硅晶片衬底的背面上的氮化硅层。

公开(公告)号：WO2011001185A1

公开(公告)日：2011-01-06

申请号：PCT/GB2010/051092

申请日：2010-07-02

Applicant: CAMBRIDGE ENTERPRISE LIMITED ,  BAUER, Wolfgang Andreas ,  HUCK, Wilhelm T. S. ,  FISCHLECHNER, Martin

Inventor： BAUER, Wolfgang Andreas ,  HUCK, Wilhelm T. S. ,  FISCHLECHNER, Martin

IPC: B01L3/00 ,  B01F13/00 ,  G01N27/447

CPC classification number: B01L3/502707 ,  B01F17/00 ,  B01J2219/00511 ,  B01J2219/0059 ,  B01J2219/00637 ,  B01J2219/00783 ,  B01J2219/00788 ,  B01J2219/00831 ,  B01J2219/00833 ,  B01J2219/00837 ,  B01J2219/0097 ,  B01L2200/0636 ,  B01L2300/0867 ,  B01L2300/16 ,  B01L2300/161 ,  B05C7/04 ,  B05D7/22 ,  B05D7/222 ,  B81B2201/0214 ,  B81B2201/05 ,  B81B2201/052 ,  B81B2201/058 ,  B81C1/00119 ,  B81C1/00206 ,  Y10T137/8593

Abstract: We describe a method of layer-by-layer deposition of a plurality of layers of material onto the wall or walls of a channel of a microfluidic device, the method comprising: loading a tube with a series of segments of solution, a said segment of solution bearing a material to be deposited; coupling said tube to said microfluidic device; and injecting said segments of solution into said microfluidic device such that said segments of solution pass, in turn, through said channel depositing successive layers of material to perform said layer-by-layer deposition onto said wall or walls of said channel. Embodiments of the methods are particularly useful for automated surface modification of plastic, for example PDMS (Poly(dimethylsiloxane)), microchannels. We also describe methods and apparatus for forming double-emulsions.

Abstract translation: 我们描述了将多层材料层逐层沉积到微流体装置的通道的壁或壁上的方法，该方法包括：将具有一系列溶液段的管装载， 含有待沉积材料的溶液; 将所述管连接到所述微流体装置; 以及将所述溶液段注射到所述微流体装置中，使得所述溶液段又通过所述通道沉积连续的材料层，以在所述通道的所述壁或壁上执行所述逐层沉积。 该方法的实施方案对于塑料的自动表面改性特别有用，例如PDMS（聚（二甲基硅氧烷）），微通道。 我们还描述了形成双重乳液的方法和设备。