-
1.发明公开PROCESS FOR REMOVING A BULK MATERIAL LAYER FROM A SUBSTRATE AND A CHEMICAL MECHANICAL POLISHING AGENT SUITABLE FOR THIS PROCESS 审中-公开除去方法基板和化学机械清洗机的材料，近地层这个过程
公开(公告)号：EP2507824A4
公开(公告)日：2013-09-25
申请号：EP10832736
申请日：2010-11-25
Applicant: BASF SE
Inventor： RAMAN VIJAY IMMANUEL , EBERT SOPHIA , BRANDS MARIO , LAN YONGQING , ZACHARIAS PHILIPP , GUBAYDULLIN ILSHAT , LI YUZHUO
IPC: H01L21/321 , C09G1/02
CPC classification number: C09G1/02 , C09K3/1463 , H01L21/3212
-
公开(公告)号：EP2539416A4
公开(公告)日：2017-11-29
申请号：EP11746938
申请日：2011-01-19
Applicant: BASF SE
Inventor： KUJAT CHRISTOF , LI YUZHUO , RUSHING KENNETH
IPC: C09K3/14
CPC classification number: C09K3/1436 , B24B37/245 , B24D11/001 , H01L21/3212
Abstract: Abrasive articles containing solid abrasive particles (A) selected from the group consisting of inorganic particles, organic particles and inorganic-organic hybrid particles (a1) having an average primary particle size of from 1 to 500 nm as determined by laser light diffraction and having electron donor groups (a2) chemically bonded to their surface are provided. The said solid abrasive particles (A) are distributed throughout or on top of or throughout and on top of a solid matrix (B). A method for manufacturing abrasive articles and a method for processing substrates useful for fabricating electrical and optical devices are provided. The said methods make use of the said abrasive articles.
-
3.发明公开A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT 审中-公开PROCESS用于产生具有化学机械抛光（CMP）的III-V材料的存在CMP组合物的半导体元件与特定的，非离子表面活性
公开(公告)号：EP2852644A4
公开(公告)日：2016-04-06
申请号：EP13794728
申请日：2013-05-21
Applicant: BASF SE
Inventor： NOLLER BASTIAN MARTEN , GILLOT CHRISTOPHE , FRANZ DIANA , LI YUZHUO
IPC: H01L21/306 , C09G1/02
CPC classification number: C09G1/02 , B81C2201/0121 , B81C2201/0123 , B81C2201/0126 , H01L21/02024 , H01L21/302 , H01L21/304 , H01L21/30625 , H01L21/3212 , H01L21/461
-
4.发明公开CHEMICAL MECHANICAL POLISHING COMPOSITION COMPRISING POLYVINYL PHOSPHONIC ACID AND ITS DERIVATIVES 有权化学 - 机械 - 药理学 - 药理学杂志
公开(公告)号：EP2794790A4
公开(公告)日：2015-07-29
申请号：EP11878201
申请日：2011-12-21
Applicant: BASF SE
Inventor： RAMAN VIJAY IMMANUEL , LI YUZHUO , SCHADE CHRISTIAN , VENKATARAMAN SHYAM SUNDAR , SU EASON YU-SHEN , USMAN IBRAHIM SHEIK ANSAR , GAO NING
IPC: C09G1/02 , C09K3/14 , H01L21/304 , H01L21/306 , H01L21/3105
CPC classification number: C09G1/04 , C09G1/00 , C09G1/02 , C09K3/1463 , C09K13/00 , H01L21/302 , H01L21/30625 , H01L21/31053 , H01L21/461
Abstract: A chemical mechanical polishing (CMP) composition comprising: (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one type of an organic polymeric compound as a dispersing agent or charge reversal agent comprising a phosphonate (P(═O)(OR1)(OR2) or phosphonic acid (P(═O)(OH)2) moiety or their deprotonated forms as pendant groups, wherein R1 is alkyl, aryl, alkylaryl, or arylalkyl, R2 is H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.
Abstract translation: 一种化学机械抛光（CMP）组合物，其包含：（A）无机颗粒，有机颗粒或其混合物或复合物，（B）至少一种作为分散剂的有机聚合物或电荷反转剂，其包含膦酸盐 P（ΟO）（OR1）（OR2）或膦酸（P（ΟO）（OH）2）部分或其去质子化形式为侧基，其中R 1为烷基，芳基，烷基芳基或芳基烷基， 烷基，芳基，烷基芳基或芳烷基，和（C）水性介质。
-
5.发明公开AQUEOUS POLISHING AGENT AND GRAFT COPOLYMERS AND THEIR USE IN PROCESS FOR POLISHING PATTERNED AND UNSTRUCTURED METAL SURFACES 审中-公开水基清洗剂和移植物及它们在一种用于清洁EYED化和非结构化的金属表面
公开(公告)号：EP2539412A4
公开(公告)日：2013-07-31
申请号：EP11746939
申请日：2011-01-19
Applicant: BASF SE
Inventor： RAMAN VIJAY IMMANUEL , GUBAYDULLIN ILSHAT , BRANDS MARIO , LI YUZHUO , PERETOLCHIN MAXIM
IPC: C09G1/02 , C08F271/02 , C09K3/14
CPC classification number: C09G1/02 , C08F283/00 , C09K3/1463 , C08F220/32
-
Patent Agency Ranking6.发明公开
公开(公告)号：EP2812422A4
公开(公告)日：2016-10-19
申请号：EP13746032
申请日：2013-01-24
Applicant: BASF SE , BASF SCHWEIZ AG
Inventor： LI YUZHUO , VENKATARAMAN SHYAM SUNDAR , ZHONG MINGJIE
CPC classification number: C11D3/3427 , C11D3/2065 , C11D3/2082 , C11D3/2086 , C11D3/349 , C11D3/3757 , C11D7/261 , C11D7/268 , C11D7/34 , C11D11/0047 , C11D11/0064 , H01L21/02074
Abstract: A post chemical-mechanical-polishing (post-CMP) cleaning composition comprising: (A) is cysteine, glutathione, N-acetylcysteine, thiourea, (L) at least one oligomeric or polymeric polycarboxylic acid, and (C) water, wherein the post-CMP cleaning composition has a pH-value in the range of from 4 to not more than 7. The use of the composition for removing residues and contaminants from the surface of semiconductor substrates useful for manufacturing microelectronic devices. A process for manufacturing microelectronic devices from semiconductor substrates comprising the step of removing residues and contaminants from the surface of the semiconductor substrates by contacting them at least once with the post-CMP cleaning composition.
-
7.发明公开A CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION COMPRISING A NON-IONIC SURFACTANT AND AN AROMATIC COMPOUND COMPRISING AT LEAST ONE ACID GROUP 审中-公开WITH A非离子表面活性化学 - 机械抛光组合物和具有至少一个酸基的芳香族化合物
公开(公告)号：EP2870599A4
公开(公告)日：2016-03-30
申请号：EP13812480
申请日：2013-06-27
Applicant: BASF SE
Inventor： REICHARDT ROBERT , LI YUZHUO , LAUTER MICHAEL
IPC: C09G1/02 , H01L21/321
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a non-ionic surfactant, (C) an aromatic compound comprising at least one acid group (Y), or a salt thereof, and (M) an aqueous medium.
-
8.发明公开A CHEMICAL MECHANICAL POLISHING COMPOSITION COMPRISING A NON-IONIC SURFACTANT AND A CARBONATE SALT 审中-公开用非离子表面活性剂和碳酸酯化学机械抛光组合
公开(公告)号：EP2870212A4
公开(公告)日：2016-03-30
申请号：EP13812726
申请日：2013-06-21
Applicant: BASF SE
Inventor： REICHARDT ROBERT , LAUTER MICHAEL , CHIU WEI LAN WILLIAM , LI YUZHUO
IPC: C09G1/02 , H01L21/321
CPC classification number: C09G1/02 , H01L21/3212
Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) a non-ionic surfactant, (C) a carbonate or hydrogen carbonate salt, (D) an alcohol, and (M) an aqueous medium.
-
9.发明公开AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES FOR ELECTRICAL, MECHANICAL AND OPTICAL DEVICES 审中-公开含水抛光组合物和方法用于化学机械抛光底物，电气，机械和光学器件
公开(公告)号：EP2614121A4
公开(公告)日：2016-03-09
申请号：EP11823139
申请日：2011-09-06
Applicant: BASF SE
Inventor： LI YUZHUO , CHU JEA-JU , VENKATARAMAN SHYAM SUNDAR , USMAN IBRAHIM SHEIK ANSAR , PINDER HARVEY WAYNE
CPC classification number: C09K13/00 , C08L33/24 , C09G1/02 , C09K3/1463 , H01L21/31053
Abstract: An aqueous polishing composition having a pH of 3 to 11 and comprising (A) abrasive particles which are positively charged when dispersed in an aqueous medium free from component (B) and of a pH of 3 to 9 as evidenced by the electrophoretic mobility; (B) anionic phosphate dispersing agents; and (C) a polyhydric alcohol component selected from the group consisting of (c1) water-soluble and water-dispersible, aliphatic and cycloaliphatic, monomeric, dimeric and oligomeric polyols having at least 4 hydroxy groups; (c2) a mixture consisting of (c21) water-soluble and water-dispersible, aliphatic and cycloaliphatic polyols having at least 2 hydroxy groups; and (c22) water-soluble or water-dispersible polymers selected from linear and branched alkylene oxide homopolymers and copolymers (c221); and linear and branched, aliphatic and cycloaliphatic poly(N-vinylamide) homopolymers and copolymers (c222); and (c3) mixtures of (c1) and (c2); and a process for polishing substrates for electrical, mechanical and optical devices.
-
10.发明公开AQUEOUS POLISHING COMPOSITIONS CONTAINING N-SUBSTITUTED DIAZENIUM DIOXIDES AND/OR N'-HYDROXY-DIAZENIUM OXIDE SALTS 审中-公开WÄSSRIGEREINIGUNGSZUSAMMENSETZUNGEN MIT N-SUBSTITUIERTEN DIAZENIUMDIOXIDEN UND / ODER N'-HYDROXY-DIAZENIUM-OXIDSALZEN
公开(公告)号：EP2614122A4
公开(公告)日：2014-01-15
申请号：EP11823140
申请日：2011-09-06
Applicant: BASF SE
Inventor： NOLLER BASTIAN , FRANZ DIANA , LI YUZHUO , USMAN IBRAHIM SHEIK ANSAR , PINDER HARVEY WAYNE , VENKATARAMAN SHYAM SUNDAR
IPC: C09G1/02 , H01L21/3105
CPC classification number: C09K13/00 , C09G1/02 , C09K3/1463 , H01L21/31053
-
-
-
-
-
-
-
-
-
Search Results
24
records
(took 0.009 seconds)
