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13 条记录 (耗时 0.009 秒)

    THREE DIMENSIONAL INDUCTOR AND TRANSFORMER
    1.
    发明公开
    THREE DIMENSIONAL INDUCTOR AND TRANSFORMER 审中-公开
    维和变压器INDUKTOR

    公开(公告)号：EP2486586A1

    公开(公告)日：2012-08-15

    申请号：EP10771245.7

    申请日：2010-10-07

    申请人： Qualcomm Incorporated

    发明人： KIM, Jonghae ,  GU, Shiqun ,  HENDERSON, Brian Matthew ,  TOMS, Thomas R. ,  CHUA-EOAN, Lew G. ,  BAZARJANI, Seyfollah S. ,  NOWAK, Matthew

    IPC分类号： H01L21/02 ,  H01L23/522 ,  H01F17/00 ,  H01L27/06 ,  H01L23/48

    摘要： A three dimensional on-chip inductor, transformer and radio frequency amplifier are disclosed. The radio frequency amplifier includes a pair of transformers and a transistor. The transformers include at least two inductively coupled inductors. The inductors include a plurality of segments of a first metal layer, a plurality of segments of a second metal layer, a first inductor input, a second inductor input, and a plurality of through silicon vias coupling the plurality of segments of the first metal layer and the plurality of segments of the second metal layer to form a continuous, non-intersecting path between the first inductor input and the second inductor input. The inductors can have a symmetric or asymmetric geometry. The first metal layer can be a metal layer in the back-end-of-line section of the chip. The second metal layer can be located in the redistributed design layer of the chip.

    ACTIVE THERMAL CONTROL FOR STACKED IC DEVICES
    4.
    发明公开
    ACTIVE THERMAL CONTROL FOR STACKED IC DEVICES 审中-公开
    主动热控制研究的堆叠式IC地层

    公开(公告)号：EP2304792A1

    公开(公告)日：2011-04-06

    申请号：EP09770821.8

    申请日：2009-06-19

    申请人： QUALCOMM Incorporated

    发明人： GU, Shiqun ,  NOWAK, Matthew ,  TOMS, Thomas R.

    IPC分类号： H01L25/065 ,  H01L23/38

    摘要： Thermal conductivity in a stacked IC device can be improved by constructing one or more active temperature control devices within the stacked IC device. In one embodiment, the control devices are thermal electric (TE) devices, such as Peltier devices. The TE devices can then be selectively controlled to remove or add heat, as necessary, to maintain the stacked IC device within a defined temperature range. The active temperature control elements can be P-N junctions created in the stacked IC device and can serve to move the heat laterally and/or vertically, as desired.

    SYSTEM AND METHOD OF SILICON SWITCHED POWER DELIVERY USING A PACKAGE
    7.
    发明公开
    SYSTEM AND METHOD OF SILICON SWITCHED POWER DELIVERY USING A PACKAGE 审中-公开
    系统在维也纳FÜRSILIZIUMGESCHALTETE LEISTUNGSZUFUHR MITTELSGEHÄUSE

    公开(公告)号：EP2025060A2

    公开(公告)日：2009-02-18

    申请号：EP07797397.2

    申请日：2007-05-09

    申请人： Qualcomm Incorporated

    发明人： CHUA-EOAN, Lew G. ,  TOMS, Thomas R. ,  ANDREEV, Boris Dimitrov ,  GAGNE, Justin Joseph Rosen ,  SHI, Chunlei

    IPC分类号： H03K19/00

    CPC分类号： H03K17/223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In one particular embodiment, an integrated circuit includes a package and a substrate electrically and physically coupled to the package. The package includes a first pin, a second pin, and metallization coupling the first pin to the second pin. The substrate is coupled to the package via the first pin and the second pin. The substrate includes a plurality of power domains and a power control unit. The second pin of the package is coupled to a particular power domain of the plurality of power domains. The power control unit includes logic and a switch, where the switch includes a first terminal coupled to a voltage supply terminal, a control terminal coupled to the logic, and a second terminal coupled to the first pin of the package. The logic selectively activates the switch to distribute power to the particular power domain via the metallization of the package.

    摘要翻译： 在一个特定实施例中，集成电路包括电气和物理耦合到封装的封装和衬底。 封装包括第一引脚，第二引脚和将第一引脚耦合到第二引脚的金属化。 衬底经由第一引脚和第二引脚耦合到封装。 基板包括多个电力域和功率控制单元。 封装的第二引脚耦合到多个电源域的特定电源域。 功率控制单元包括逻辑和开关，其中开关包括耦合到电压源端子的第一端子，耦合到逻辑电路的控制端子和耦合到封装的第一引脚的第二端子。 该逻辑选择性地激活开关以通过封装的金属化将功率分配给特定的功率域。

    SYSTEM AND METHOD OF POWER DISTRIBUTION CONTROL OF AN INTEGRATED CIRCUIT
    10.
    发明公开
    SYSTEM AND METHOD OF POWER DISTRIBUTION CONTROL OF AN INTEGRATED CIRCUIT 审中-公开
    系统在维也纳ZER ENERGIEVERTEILUNGSSTEUERUNG EINER INTEGRIERTEN SCHALTUNG

    公开(公告)号：EP2025059A1

    公开(公告)日：2009-02-18

    申请号：EP07761131.7

    申请日：2007-04-23

    申请人： Qualcomm Incorporated

    发明人： CHUA-EOAN, Lew G. ,  ANDREEV, Boris ,  RIDDLE, Christopher C. ,  SHI, Chunlei ,  JUNG, Seong-ook ,  TOMS, Thomas R. ,  GAGNE, Justin Joseph Rosen

    IPC分类号： H03K19/00

    摘要： A device is disclosed that includes a first pin to supply power to a first power domain of an integrated circuit, a second pin to supply power to a second power domain of the integrated circuit, a switching regulator and a controller. The switching regulator is coupled to the first pin to provide a first regulated power supply to the first power domain and is coupled to the second pin to provide a second regulated power supply to the second power domain. The controller is coupled to the first pin and to the second pin to selectively reduce current flow to at least the second pin during a low power event.

    摘要翻译： 公开了一种器件，其包括：向集成电路的第一电源域供电的第一引脚，向集成电路的第二电源域供电的第二引脚，开关稳压器和控制器。 开关稳压器耦合到第一引脚以向第一功率域提供第一稳压电源，并且耦合到第二引脚以向第二功率域提供第二稳压电源。 控制器耦合到第一引脚和第二引脚，以在低功率事件期间选择性地减少至少第二引脚的电流。