公开(公告)号：EP2183569A2

公开(公告)日：2010-05-12

申请号：EP08797114.9

申请日：2008-08-04

Applicant: Veeco Instruments Inc.

Inventor： PRATER, Craig ,  SU, Chanmin ,  PHAN, Nghi ,  MARKAKIS, Jeffrey ,  CUSWORTH, Craig ,  SHI, Jian ,  KINDT, Johannes ,  NAGLE, Steven ,  FAN, Wenjun

IPC: G01N13/16 ,  G01N13/10

CPC classification number: G01Q10/04 ,  G01Q10/065 ,  G01Q20/02 ,  G01Q60/38

Abstract: A method and apparatus are provided that have the capability of rapidly scanning a large sample of arbitrary characteristics under force control feedback so has to obtain a high resolution image. The method includes generating relative scanning movement between a probe (215) of the SPM and a sample (112) to scan the probe through a scan range of at least 4 microns at a rate of at least 30 lines/sec and controlling probe-sample interaction with a force control slew rate of at least 1 mm/sec. A preferred SPM capable of achieving these results has a force controller having a force control bandwidth of at least closed loop bandwidth of at least 10 kHz.

Abstract translation: 提供一种具有在力控制反馈下快速扫描任意特征的大样本的能力的方法和装置，因此必须获得高分辨率图像。 该方法包括在SPM的探针和样品之间产生相对扫描运动，以至少4微米的扫描范围以至少30行/秒的速率扫描探针，并且控制探针 - 样品与力控制回转的相互作用 速率至少为1毫米/秒。 能够实现这些结果的优选SPM具有力控制器，其具有至少10kHz的至少闭环带宽的力控制带宽。

公开(公告)号：EP1994196A1

公开(公告)日：2008-11-26

申请号：EP07758228.6

申请日：2007-03-09

Applicant: VEECO INSTRUMENTS INC.

Inventor： SFERLAZZO, Piero ,  MAO, Ming ,  CHEN, Jinliang ,  FELSENTHAL, David ,  HIERONYMI, Robert, Gabriel ,  EROR, Miroslav

IPC: C23C14/50 ,  C23C14/35

CPC classification number: C23C14/352 ,  C23C14/505 ,  C23C14/568 ,  C23C14/5833

Abstract: The present invention relates to a sputter deposition system 10 and to methods of use thereof for processing substrates 12 using planetary sputter deposition methods. The sputter deposition system 10 includes a deposition chamber 14 having an azimuthal axis 16. A rotatable member 30 and 32 is situated in the chamber 14 and includes a plurality of magnetrons 34 provided thereon. Each magnetron 34 includes a corresponding one of a plurality of sputtering targets 36. The rotatable member 30, 32 is configured to position each of the magnetrons 34 to direct sputtered material from the corresponding one of the sputtering targets 36 to a deposition zone 50 defined in the deposition chamber 14. A transport mechanism 66 is situated in the deposition chamber 14 and includes an arm 68 rotatable about the azimuthal axis 16. A substrate holder 72 is attached to the arm 68 of the transport mechanism 66 and supports the substrate 12 as the arm 68 rotates the substrate holder 72 to intersect the deposition zone 50 for depositing sputtered material on the substrate 12.

公开(公告)号：EP1872237A2

公开(公告)日：2008-01-02

申请号：EP06799897.1

申请日：2006-03-31

Applicant: VEECO INSTRUMENTS INC.

Inventor： KAMEYAMA, Ikuya ,  SIEGFRIED, Daniel E.

IPC: G06F15/00

CPC classification number: G06F17/50 ,  H01J27/024

Abstract: A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change factor or a hole diameter change factor. Also included is an ion beam grid having the characteristic of hole locations or sizes or both defined by a change factor modification of control grid hole locations or sizes or both.

Abstract translation: 用于改变离子束网格中的孔位置或尺寸或两者的设计过程包括识别要修改的控制网格; 获得网格图案的变化因子; 并使用变化因子生成新的网格图案。 变化因素是孔位置变化因子或孔径变化因子中的一个或两个。 还包括具有孔位置或尺寸的特征的离子束网格，或两者均由控制网孔位置或尺寸或两者的变化因子修改来定义。

公开(公告)号：EP1771685A2

公开(公告)日：2007-04-11

申请号：EP04795660.2

申请日：2004-10-19

Applicant: VEECO INSTRUMENTS INC.

Inventor： BOGUSLAVSKIY, Vadim ,  GURARY, Alexander

IPC: F24C3/04

CPC classification number: C23F1/26 ,  C21D7/06 ,  C21D2261/00 ,  C22F1/18 ,  F28F13/18 ,  F28F2245/06

Abstract: A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.

公开(公告)号：EP1756835A1

公开(公告)日：2007-02-28

申请号：EP05735949.9

申请日：2005-04-14

Applicant: VEECO INSTRUMENTS INC.

Inventor： SU, Chanmin ,  PHAN, Nghi

IPC: G12B21/20

CPC classification number: G01Q10/065 ,  G01Q60/366

Abstract: A cantilever probe-based instrument (10, 110) is controlled to counteract the lateral loads imposed on the probe as a result of probe sample interaction. The probe preferably includes an active cantilever, such as a so-called bimorph cantilever. Force counteraction is preferably achieved by monitoring a lateral force-dependent property of probe operation such as cantilever free end deflection angle and applying a voltage to at least one of the cantilever and one or more separate actuators under feedback to maintain that property constant as the probe-sample spacing decreases. The probe could further uses at least one of contact flexural and torsional resonances characteristics to determine contact and release points. With the knowledge of the tip profile, quantitative mechanical data for probe sample interaction can be obtained.

公开(公告)号：EP1756595A2

公开(公告)日：2007-02-28

申请号：EP05751114.9

申请日：2005-05-21

Applicant: VEECO INSTRUMENTS INC.

Inventor： HUANG, Lin ,  SU, Chanmin

IPC: G01R27/04 ,  G01R27/32

CPC classification number: G01Q60/30 ,  G01Q10/065 ,  G01Q60/32 ,  G01Q60/40 ,  G01Q60/48

Abstract: The preferred embodiments are directed to a method and apparatus of operating a scanning probe microscope (SPM) including oscillating a probe of the SPM at a torsional resonance of the probe, and generally simultaneously measuring an electrical property, e.g., a current, capacitance, impedance, etc., between a probe of the SPM and a sample at a separation controlled by the torsional resonance mode. Preferably, the measuring step is performed while using torsional resonance feedback to maintain a set-point of SPM operation.

公开(公告)号：EP1540049A1

公开(公告)日：2005-06-15

申请号：EP03772010.9

申请日：2003-07-29

Applicant: Veeco Instruments Inc.

Inventor： COLOMBO, Paul, E. ,  PRIDDY, Scott, Wayne

IPC: C30B23/02 ,  F04B37/08

CPC classification number: C30B23/066 ,  C30B23/02 ,  C30B23/06 ,  F04B37/08

Abstract: An integrated phase separator for use in an ultra high vacuum system, for example, a molecular beam epitaxy system, is described. The vacuum chamber has a cryogenic panel disposed therein. The cryogenic panel includes a cryogenic shroud region and a phase separator region. Liquid nitrogen is introduced into the cryogenic panel via an inlet line. As the liquid nitrogen warms and vaporizes, nitrogen vapor rises within the shroud. The phase separator region within the cryogenic panel provides a near atmospheric pressure vapor barrier over the liquid nitrogen so the t the nitrogen vapor may escape smoothly through the outlet of the panel, without forming gas bursts. Also the phase separator region is vacuum jacketed to prevent cryogenic shroud surface temperature changes due to variations in liquid nitrogen levels, thereby increasing the cryogenic shroud’s pumping stability. In one embodiment, used in molecular beam epitaxy (MBE), the cryopanel is divided into first and second cooling chambers. The first cooling chamber contains liquid nitrogen and surrounds the substrates to be coated, while the second cooling chamber contains a different fluid such as water, and surrounds the effusion cells so as to dissipate heat generated during the operation of effusion cells.

公开(公告)号：EP0342940A3

公开(公告)日：1991-05-08

申请号：EP89304958.5

申请日：1989-05-17

Applicant: VEECO INSTRUMENTS INC.

Inventor： Lakios, Emmanuel N. ,  McGraw, Michael F.

IPC: H01L21/00

CPC classification number: H01L21/68721 ,  H01L21/67109 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/68707 ,  H01L21/68792 ,  Y10T29/41

Abstract: A loading station receives a substrate into a load-lock volume pressure isolated from a loading station chamber which is open to a processing chamber. The volume is evacuated and the substrate lowered into the loading chamber. A transport arm moves the substrate frOm the loading station to a substrate carrier of a cooling fixture within the processing chamber. The carrier is connected to a clamp which together move vertically downward to lower the wafer onto a substrate seat of the fixture. During substrate processing the fixture is tiltable and rotatable and provides substrate cooling by solid-to-solid conduction, forced convection and free convection. Solid-to-solid conduction is provided by the clamp. The substrate is pressed to the fixture by the cooling clamp having a circulating cooling fluid. Forced convection is provided by a gas flowing into the microspic areas between the substrate and the fixture at a pressure high enough to cause bowing or lifting of the substrate and thus to create a gas region between the substrate and the fixture. An O-ring provides a seal under the pressure of the clamps near the periphery of the substrate to substantially seal the gas from entering the processing chamber. The gas flows into and through the gas region absorbing heat energy from the back surface of the substrate and flowing out of the region. Free convection is provided by heat transfer between the substrate and the substrate seat. The pressure in the gas region is high enough that the mean free path of the gas molecules is less than the distance between the substrate and the fixture. As a result gas molecules absorb energy from the substrate and intermix and transfer energy with other molecules. Some molecules collide with the substrate seat and transfer heat energy to the seat. After substrate treatment the gas is evacuated from behind the substrate prior to release of the clamps.

公开(公告)号：EP0342940A2

公开(公告)日：1989-11-23

申请号：EP89304958.5

申请日：1989-05-17

Applicant: VEECO INSTRUMENTS INC.

Inventor： Lakios, Emmanuel N. ,  McGraw, Michael F.

IPC: H01L21/00

CPC classification number: H01L21/68721 ,  H01L21/67109 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/68707 ,  H01L21/68792 ,  Y10T29/41

Abstract: A loading station receives a substrate into a load-lock volume pressure isolated from a loading station chamber which is open to a processing chamber. The volume is evacuated and the substrate lowered into the loading chamber. A transport arm moves the substrate frOm the loading station to a substrate carrier of a cooling fixture within the processing chamber. The carrier is connected to a clamp which together move vertically downward to lower the wafer onto a substrate seat of the fixture. During substrate processing the fixture is tiltable and rotatable and provides substrate cooling by solid-to-solid conduction, forced convection and free convection.
Solid-to-solid conduction is provided by the clamp. The substrate is pressed to the fixture by the cooling clamp having a circulating cooling fluid.
Forced convection is provided by a gas flowing into the microspic areas between the substrate and the fixture at a pressure high enough to cause bowing or lifting of the substrate and thus to create a gas region between the substrate and the fixture. An O-ring provides a seal under the pressure of the clamps near the periphery of the substrate to substantially seal the gas from entering the processing chamber. The gas flows into and through the gas region absorbing heat energy from the back surface of the substrate and flowing out of the region.
Free convection is provided by heat transfer between the substrate and the substrate seat. The pressure in the gas region is high enough that the mean free path of the gas molecules is less than the distance between the substrate and the fixture. As a result gas molecules absorb energy from the substrate and intermix and transfer energy with other molecules. Some molecules collide with the substrate seat and transfer heat energy to the seat. After substrate treatment the gas is evacuated from behind the substrate prior to release of the clamps.

Abstract translation: 加载站将基板接收到从开放到处理室的装载站室隔离的加载锁定体积压力中。 将体积抽真空并将基底下降到装载室中。 传送臂将加载站的基板frO移动到处理室内的冷却固定装置的基板载体。 载体连接到夹具，该夹具一起垂直向下移动以将晶片降低到固定装置的基板座上。 在基板处理期间，夹具可倾斜并可旋转，并通过固体 - 固体传导，强制对流和自由对流提供基板冷却。 固体 - 固体传导由夹具提供。 通过具有循环冷却流体的冷却夹具将基板压向固定装置。 强制对流由在足够高的压力下流入基板和固定装置之间的微小区域中的气体提供，以引起基板的弯曲或提升，从而在基板和固定装置之间形成气体区域。 O形环在靠近基板周边的夹具的压力下提供密封，以基本上密封气体进入处理室。 气体流入并流过气体区域，从衬底的背面吸收热能并流出该区域。 通过基板和基板座之间的热传递提供自由对流。 气体区域中的压力足够高，使得气体分子的平均自由程小于衬底和夹具之间的距离。 因此，气体分子从基底吸收能量，并与其他分子混合并转移能量。 一些分子与基体座碰撞并将热能传递到座。 在基板处理之后，在释放夹具之前，将气体从基板的后面排出。

公开(公告)号：EP0073235A1

公开(公告)日：1983-03-09

申请号：EP82901055.0

申请日：1982-02-12

Applicant: VEECO INSTRUMENTS INC.

Inventor： WESTERBERG, Eugene R. ,  CONE, Donald R. ,  MURAY, Julius J. ,  TERRY, Jan C.

IPC: H01L21 ,  G03F9 ,  H01J37

CPC classification number: G03F9/00 ,  H01J37/3045

Abstract: Systeme de rereperage permettant de determiner l'emplacement et de positionner la surface cible d'un substrat de tranche (275) par rapport a une pluralite de rayons de particules chargees utilisees pour ecrire directement le schema d'un circuit integre simultanement a une pluralite d'emplacements sur le substrat. Le rereperage est execute en explorant avec deux ou plusieurs rayons de particules chargees (100, 150) un nombre correspondant de reperes fiduciels de re-reperage (200, 250) sur le substrat (275). Ces reperes (200, 250) peuvent se composer d'un materiau possedant un nombre atomique eleve ou des caracteristiques topographiques definies au prealable. Des electrons disperses par ces reperes (200, 250) sont detectes et convertis en signaux electriques. La relation temporelle entre les rayons d'exploration (100, 150) et les signaux electriques resultants peut etre utilisee pour determiner l'emplacement du substrat.

Abstract translation: 用于相对于确定晶片衬底（275）的目标表面的位置和定位的多个用来写带电粒子束系统的rereperage直接的电路的示图在多个同时集成 基板上的位置。 所述rereperage执行与衬底（275）上的带电粒子（100，150）的rereperage基准点标记的相应数量（200，250）的两个或更多的射线探索中。 这些索引（200,250）可以由具有高原子序数的材料或可预先定义的地形特征组成。 由这些引脚（200,250）分散的电子被检测并转换成电信号。 扫描射线（100,150）与所得到的电信号之间的时间关系可用于确定衬底的位置。