公开(公告)号：EP2942822A1

公开(公告)日：2015-11-11

申请号：EP15174886.0

申请日：2013-03-29

申请人： Asahi Kasei E-materials Corporation

发明人： Koike, Jun ,  Mitamura, Yoshimichi ,  Yamaguchi, Fujito

IPC分类号： H01L33/22 ,  H01L33/32 ,  H01L21/02 ,  H01L33/00 ,  H01L33/20

CPC分类号： H01L33/58 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02658 ,  H01L22/12 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32

摘要： An optical substrate that includes a substrate main body and a concave-convex structure which is formed in a part or a whole of a surface of the substrate main body,
wherein the concave-convex structure includes:
a first concave-convex structure (L) that is provided on a main surface of the substrate main body and that is formed with a plurality of convex portions and concave portions having a first average interval (PL); and
a second concave-convex structure (S) that is provided on a surface of at least one of the convex portion and the concave portion forming the first concave-convex structure (L) and that is formed with a plurality of convex portions and concave portions having a second average interval (PS), and

a ratio (PL/PS) between the first average interval (PL) and the second average interval (PS) is more than 1 but equal to or less than 2000.
When the optical substrate is used in a semiconductor light-emitting element, dislocations in a semiconductor layer are dispersed to reduce the dislocation density, and thus internal quantum efficiency IQE is improved, and a waveguide mode is removed by light scattering and thus the light the extraction efficiency LEE is increased, with the result that the efficiency of light emission of the semiconductor light-emitting element is enhanced.

摘要翻译： 一个光导基片确实包括其在一部分或全部的衬底型主体的表面形成，worin凹凸结构的基板主体和凹凸结构全部包括：第一凹凸结构（L） 并设置在所述基板主体的主面上，也形成有具有第一平均间隔（PL）的凸部和凹部的多元性; 和第二凹凸结构（S）并设置在所述凸部中的至少一个以及在所述第一凹凸结构（L）和所述凹部并形成有凸部和凹部的多个表面上 具有第二平均间隔（PS），并且所述第一平均间隔（PL）和第二平均间隔（PS）之间的比率（PL / PS）部分是大于1但等于或小于2000。当光导基片 在半导体发光元件时，在半导体层中的位错被分散来降低位错密度，并且因此内部量子效率IQE得到改善，并且通过光散射，因此光的取出效率LEE是除去的波导模式 增加，结果做了半导体发光元件的发光效率提高。

公开(公告)号：EP2942802A1

公开(公告)日：2015-11-11

申请号：EP14176156.9

申请日：2014-07-08

申请人： NXP B.V.

发明人： Lander, Robert, J, P, ,  Delhougne, Romain

IPC分类号： H01L21/02

CPC分类号： H01L21/02381 ,  H01L21/0243 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/778 ,  H01L29/812

摘要： The invention relates to a semiconductor substrate having an outside surface and having a GaN-based layer and a Si layer. At least one of these layers is provided with a plurality of recesses that are arranged in a plane of the semiconductor substrate parallel to an outside surface of the substrate. The recesses are arranged to divert lateral propagation of a crack in the GaN-based layer into directions that are parallel to at least one of (1010), (1100), and (0110) planes of the GaN-based layer having a (0001) surface orientation so as to limit the lateral propagation of the crack. This invention also relates to semiconductor devices comprising the semiconductor substrate and methods of fabricating such a semiconductor substrate.

摘要翻译： 本发明涉及具有外表面并具有GaN基层和Si层的半导体衬底。 这些层中的至少一个设置有多个凹槽，其布置在平行于衬底的外表面的半导体衬底的平面中。 这些凹槽布置成将GaN基层中的裂纹的横向传播转移到具有（0001）的GaN基层的（1010），（1100）和（0110）平面中的至少一个平面的方向 ）表面取向，以限制裂纹的横向传播。 本发明还涉及包括半导体衬底的半导体器件和制造这种半导体衬底的方法。

公开(公告)号：EP2939259A1

公开(公告)日：2015-11-04

申请号：EP13849973.6

申请日：2013-12-31

申请人： Saint-Gobain Cristaux & Détecteurs

发明人： FAURIE, Jean-Pierre ,  BEAUMONT, Bernard

IPC分类号： H01L21/20 ,  H01L33/00

CPC分类号： H01L33/32 ,  C30B25/18 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02609 ,  H01L33/0075 ,  H01L33/12 ,  H01S5/3013 ,  Y10T428/26

摘要： A substrate comprises a Group III-V material having an upper surface and a buffer layer having a thickness of not greater than about 1.3 μm and overlying the upper surface of the substrate. A plurality of optoelectronic devices formed on the substrate having a normalized light emission wavelength standard deviation of not greater than about 0.0641 nm/cm
2 at a wavelength within a range of between about 400 nm to about 550 nm.

公开(公告)号：EP2360719B1

公开(公告)日：2015-10-21

申请号：EP09833171.3

申请日：2009-12-14

申请人： DOWA Electronics Materials Co., Ltd.

发明人： IKUTA, Tetsuya ,  SHIMIZU, Jo ,  SHIBATA, Tomohiko

IPC分类号： H01L21/338 ,  C23C16/34 ,  H01L21/205 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01L21/0262 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/66462 ,  H01L29/7787

公开(公告)号：EP2056339A4

公开(公告)日：2015-09-30

申请号：EP07792537

申请日：2007-08-15

申请人： TOYODA GOSEI KK

发明人： MIKI HISAYUKI ,  HANAWA KENZO ,  SASAKI YASUMASA

IPC分类号： H01L21/203 ,  C23C14/00 ,  C23C14/06 ,  C23C14/34 ,  H01L21/02 ,  H01L33/00

CPC分类号： H01L33/007 ,  C23C14/0036 ,  C23C14/0641 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. A method of manufacturing a group-III nitride compound semiconductor light-emitting device includes a step of forming on a substrate 11 a semiconductor layer made of a group-III nitride compound semiconductor including Ga as a group-III element using a sputtering method. The substrate 11 and a sputtering target are arranged so as to face each other, and a gap between the substrate 11 and the sputtering target is in the range of 20 to 100 mm. In addition, when the semiconductor layer is formed by the sputtering method, a bias of more than 0.1 W/cm 2 is applied to the substrate 11. Further, when the semiconductor layer is formed, nitrogen and argon are supplied into a chamber used for sputtering.

公开(公告)号：EP2912682A1

公开(公告)日：2015-09-02

申请号：EP13780170.0

申请日：2013-10-24

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： VAUFREY, David ,  BONO, Hubert

IPC分类号： H01L21/02

CPC分类号： H01L21/02617 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02645

摘要： A method for producing at least one semi-conductive structure (130) on the surface (105) of a support (100) of which the surface comprises silicon. The method comprises the steps consisting of providing the support (100), forming, in contact with an area (101) of the surface (105), called the formation area, a layer (120) of a first material, the remainder (102) of the surface (105), called the free area, remaining free of the first material, the dimensions of the formation area (101) and the first material being suitable for forming the structure (130), the first material comprising gallium, the formation of said layer (120) taking place at a temperature lower than 600°C, and of forming the structure (130) in contact with the layer (120).

公开(公告)号：EP2543119A4

公开(公告)日：2015-08-12

申请号：EP11751456

申请日：2011-03-04

申请人： UNIV CALIFORNIA

发明人： HSU PO SHAN ,  KELCHNER KATHRYN M ,  FARRELL ROBERT M ,  HAEGER DANIEL A ,  OHTA HIROAKI ,  TYAGI ANURAG ,  NAKAMURA SHUJI ,  DENBAARS STEVEN P ,  SPECK JAMES S

IPC分类号： H01S5/00 ,  B82Y20/00 ,  H01L21/02 ,  H01S5/20 ,  H01S5/22 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02609 ,  H01L31/03044 ,  H01L31/036 ,  H01L31/0735 ,  H01L33/0025 ,  H01L33/0045 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/2009 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3404 ,  H01S2304/04

摘要： An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15

公开(公告)号：EP2896725A1

公开(公告)日：2015-07-22

申请号：EP13837687.6

申请日：2013-09-04

申请人： Tokuyama Corporation

发明人： HIRONAKA, Keiichiro ,  KINOSHITA, Toru

IPC分类号： C30B29/38 ,  C30B25/20 ,  H01L21/205 ,  H01L33/32 ,  H01S5/343

CPC分类号： H01L29/045 ,  B82Y20/00 ,  C30B25/186 ,  C30B29/403 ,  C30B29/68 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/2003 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/3202 ,  H01S5/343 ,  H01S5/34333

摘要： [Problem] The purpose of the present invention is to provide a highly efficient, high quality group-III nitride semiconductor element, and to provide a novel aluminum nitride substrate (aluminum nitride single crystal substrate) for fabricating the group-III nitride semiconductor element. [Solution] A substrate comprising aluminum nitride, wherein the aluminum nitride substrate has on at least a surface thereof an aluminum nitride single-crystal layer having as a principal plane a plane that is inclined 0.05°to 0.40° in the m-axis direction from the (0001) plane of a wurzite structure.

摘要翻译： 本发明的目的是提供一种高效率，高质量的III族氮化物半导体元件，并提供用于制造III族氮化物半导体元件的新型氮化铝衬底（氮化铝单晶衬底）。 [解决方案]一种包含氮化铝的衬底，其中，所述氮化铝衬底至少在其表面上具有作为主面的氮化铝单晶层，该平面为在m轴方向上倾斜0.05°至0.40°的平面 （0001）平面的菱铁矿结构。

公开(公告)号：EP2432005A4

公开(公告)日：2015-05-27

申请号：EP10774710

申请日：2010-05-10

申请人： DOWA ELECTRONICS MATERIALS CO

发明人： IKUTA TETSUYA ,  SHIMIZU JO ,  SHIBATA TOMOHIKO ,  SAKAMOTO RYO ,  ITO TSUNEO

IPC分类号： H01L29/778 ,  H01L29/15 ,  H01L29/20 ,  H01L29/207

CPC分类号： H01L29/207 ,  H01L21/02378 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/1075 ,  H01L29/155 ,  H01L29/2003 ,  H01L29/7786

公开(公告)号：EP2768013A4

公开(公告)日：2015-05-20

申请号：EP12839912

申请日：2012-10-12

申请人： TAMURA SEISAKUSHO KK ,  KOHA CO LTD

发明人： IIZUKA KAZUYUKI ,  MORISHIMA YOSHIKATSU ,  SATO SHINKURO

IPC分类号： H01L21/205 ,  C23C16/34 ,  C30B29/38 ,  H01L33/32

CPC分类号： H01L29/2003 ,  C30B25/10 ,  C30B25/16 ,  C30B25/183 ,  C30B29/403 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32