公开(公告)号：EP3291304A1

公开(公告)日：2018-03-07

申请号：EP15883644.5

申请日：2015-09-02

申请人： BOE Technology Group Co., Ltd. ,  South China University of Technology

发明人： YUAN, Guangcai ,  YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

IPC分类号： H01L29/24 ,  H01L29/786 ,  H01L21/34 ,  H01L21/02

CPC分类号： H01L29/7869 ,  H01L21/02 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02565 ,  H01L21/34 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

摘要： This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.

摘要翻译： 本公开公开了属于平板显示器领域的氧化物半导体薄膜，薄膜晶体管，制造方法和器件。 氧化物半导体薄膜由含有锆和铟的氧化物构成。 制造氧化物半导体薄膜的方法包括使用含锆和铟的氧化物制备靶，并且溅射靶以获得氧化物半导体薄膜。

公开(公告)号：EP3174101A4

公开(公告)日：2017-06-28

申请号：EP15824091

申请日：2015-07-21

申请人： FLOSFIA INC

发明人： HITORA TOSHIMI ,  ODA MASAYA ,  TAKATSUKA AKIO

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/34 ,  H01L27/098 ,  H01L29/04 ,  H01L29/24 ,  H01L29/739 ,  H01L29/772 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872 ,  H01L33/26

CPC分类号： H01L29/24 ,  C23C16/40 ,  C23C16/4415 ,  C23C16/4481 ,  H01L21/0242 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02628 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/739 ,  H01L29/7395 ,  H01L29/7722 ,  H01L29/778 ,  H01L29/7787 ,  H01L29/78 ,  H01L29/8083 ,  H01L29/812 ,  H01L29/8122 ,  H01L29/872 ,  H01L29/8725 ,  H01L33/005 ,  H01L33/26 ,  H01L33/44

摘要： A semiconductor film, a sheet like object, and a semiconductor device are provided that have inhibited semiconductor properties, particularly leakage current, and excellent withstand voltage and heat dissipation. A crystalline semiconductor film or a sheet like object includes a corundum structured oxide semiconductor as a major component, wherein the film has a film thickness of 1 µm or more. Particularly, the semiconductor film or the object includes a semiconductor component of oxide of one or more selected from gallium, indium, and aluminum as a major component. A semiconductor device has a semiconductor structure including the semiconductor film or the object.

摘要翻译： 提供半导体膜，片状物和半导体器件，其具有抑制的半导体特性，特别是泄漏电流，以及优异的耐电压和散热性。 晶体半导体膜或片状物体包含刚玉结构氧化物半导体作为主要成分，其中所述膜具有1μm或更大的膜厚度。 特别地，半导体膜或物体包括选自镓，铟和铝中的一种或多种氧化物的半导体成分作为主要成分。 半导体器件具有包括半导体膜或物体的半导体结构。

公开(公告)号：EP2745326A1

公开(公告)日：2014-06-25

申请号：EP12753632.4

申请日：2012-08-17

申请人： Ramgoss Inc.

发明人： ADEKORE, Bunmi, T.

IPC分类号： H01L29/78 ,  H01L29/778 ,  H01L29/808 ,  H01L21/337 ,  H01L21/34 ,  H01L21/336 ,  H01L29/22 ,  H01L29/267 ,  H01L29/04 ,  H01L29/08

CPC分类号： H01L29/7802 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0657 ,  H01L29/0847 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/267 ,  H01L29/66446 ,  H01L29/66454 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66924 ,  H01L29/66969 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7813 ,  H01L29/8083

摘要： A transistor, such as a vertical metal field effect transistor, can include a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate comprising of AlGaN-based materials and electrodes disposed on the second side of the substrate. The transistor can also include a plurality of semiconductor layers and a dielectric layer disposed between the plurality of semiconductor layers and electrode materials.

公开(公告)号：EP1815545A2

公开(公告)日：2007-08-08

申请号：EP05804089.0

申请日：2005-10-28

申请人： Lu, Zheng-Hong ,  Yuan, Yanyan

发明人： Lu, Zheng-Hong ,  Yuan, Yanyan

IPC分类号： H01L51/54 ,  H01L33/00 ,  H01L29/36 ,  H01L23/532 ,  H01L21/34 ,  H01L51/50

CPC分类号： H01L51/5052 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0081 ,  H01L51/5088 ,  H01L51/5092

摘要： The present invention provides a molecular film by alkaline fluoride n-doping into an electron transport host The present invention also provides a molecular film where the transport molecule can either be tris(8-hydroxyquinolinato) (Alq3) or fullerene The present invention further provides a p-n junction and a field-effect transistor of the same materials.

公开(公告)号：EP0787354B1

公开(公告)日：2003-01-29

申请号：EP95936166.8

申请日：1995-10-20

申请人： NORDIC SOLAR ENERGY AB

发明人： BODEGAARD, Marika ,  HEDSTRÖM, Jonas ,  STOLT, Lars

IPC分类号： H01L21/34 ,  H01L31/00 ,  H01L31/068

CPC分类号： H01L31/0749 ,  H01L21/443 ,  H01L31/03923 ,  Y02E10/541 ,  Y02P70/521

摘要： A method of manufacturing thin-film solar cells, wherein a layer of copper indium selenide (CuInSe2) (3) is applied in one manufacturing step on a structure which includes a metal layer (2) forming an electrical back contact in the solar cell, this back contact being applied to a substrate (1). The invention is characterized in that a layer (6) which contains an alkali metal is formed on the structure prior to applying the CuInSe2 layer (3).

公开(公告)号：EP0635882A3

公开(公告)日：1995-10-11

申请号：EP94109896.4

申请日：1994-06-27

申请人： MOTOROLA, INC.

发明人： Davis, Kenneth L. ,  Weitzel, Charles ,  Mellen, Neal J.

IPC分类号： H01L21/34 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/66068 ,  H01L29/78 ,  Y10S148/148

摘要： A silicon carbide vertical MOSFET (30, 60) formed on a silicon carbide substrate (35, 65) with portions of epitaxial layers (39, 48 or 69, 78) defining the various transistor electrodes, rather than defining the electrodes with implants and diffusion. An opening (40, 70) is formed in some of the epitaxial layers and a conductive layer (48, 85) is formed therein to electrically connect a drain contact (95) on the rear of the substrate to the components on the front of the substrate.

摘要翻译： 碳化硅垂直MOSFET（30,60）形成在碳化硅衬底（35,65）上，外延层（39,48或69,78）的一部分限定各种晶体管电极，而不是用注入和扩散来限定电极 。 在一些外延层中形成开口（40,70），并在其中形成导电层（48,85），以将衬底背面上的漏极触点（95）电连接到衬底背面上的元件 基质。

公开(公告)号：EP0587417A2

公开(公告)日：1994-03-16

申请号：EP93307070.8

申请日：1993-09-08

申请人： INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER ,  THE HOKKAIDO ELECTRIC POWER COMPANY INC.

发明人： Hamada, Kazuyuki, c/o Int. Superconductivity ,  Wakata, Mitsunobu, c/o Int. Superconductivity ,  Matsuura, Kiyotaka, c/o Int. Superconductivity ,  Sugii, Nobuyuki, c/o Int. Superconductivity ,  Kubo, Kohichi, c/o Int. Superconductivity ,  Yamauchi, Hisao, c/o Int. Superconductivity

IPC分类号： C30B1/02 ,  H01L21/34 ,  C04B35/58 ,  H01L39/12

CPC分类号： C04B35/58078 ,  C04B35/5805 ,  H01L29/26

摘要： Disclosed is a boride material for electronic elements, which is represented by a chemical formula of A 1-x E x B₁₂ (where A is Zr of Hf, E is Sc or Y, and 0.1 ≦ x ≦ 0.9) and the crystal system of which is a cubic one at a temperature not lower than its phase transition temperature and is a hexagonal one at a temperature not higher than its phase transition temperature. The boride material is prepared by mixing oxide powders or sulfate powders of the constitutive elements A and E and a boron powder followed by shaping the powder mixture and then sintering the shaped body.

摘要翻译： 公开了一种用于电子元件的硼化物材料，其由化学式A1-xExB12（其中A为Hf的Hf，E为Sc或Y，且0.1

公开(公告)号：EP0139990B1

公开(公告)日：1989-01-25

申请号：EP84110058.9

申请日：1984-08-23

申请人： International Business Machines Corporation

发明人： Gaind, Arun Kumar ,  Kulkarni, Subhash Balkrishna ,  Poponiak, Michael Robert

IPC分类号： H01L21/205 ,  H01L21/34

CPC分类号： H01L21/74 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  Y10S438/916

公开(公告)号：EP0050925A2

公开(公告)日：1982-05-05

申请号：EP81304611.7

申请日：1981-10-05

申请人： PHOTON POWER INC.

发明人： Singh, Vijay Pal

IPC分类号： H01L31/18 ,  H01L31/06 ,  H01L21/34

CPC分类号： H01L31/03365 ,  H01L31/072 ,  H01L31/1828 ,  Y02E10/543

摘要： A photovoltaic cell is formed by combining a spray process, forming a crystalline layer containing cadmium and sulfur, and an evaporation process, depositing copper chloride for converting to Cu x S. The crystals containing cadmium and sulfur are heated in an atmosphere of cadmium and chlorides to obtain crystals having at least one dimension greater than 0.5 micron and a planar layer of Cu x S is formed on the large crystals. A layer of Cu x S having a thickness of 0.5-1.0 micron is obtained. Electrodes are formed from evaporated gold or chromium or a metallic paste including silver or copper. Zn x Cd 1-x S may be substituted for CdS through at least part of the crystalline layer for improved Voc.

摘要翻译： 通过组合喷射法，形成含有镉和硫的结晶层和蒸发法形成光伏电池，将氯化铜沉积以转化为CuxS。 含有镉和硫的晶体在镉和氯化物的气氛中加热，得到至少一个尺寸大于0.5微米的晶体，并在大晶体上形成一层CuxS平面层。 得到厚度为0.5-1.0微米的CuxS层。 电极由蒸发的金或铬或包括银或铜的金属膏形成。 Zn x C d 1-x S可以通过至少部分结晶层代替CdS以改善Voc。

公开(公告)号：EP3482420B1

公开(公告)日：2024-09-04

申请号：EP16880197.5

申请日：2016-07-08

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/34 ,  H01L21/02

CPC分类号： H01L21/02521 ,  H01L21/02565 ,  H01L29/7869 ,  H01L29/78696 ,  H01L27/1288 ,  H01L27/1259