公开(公告)号：EP1190437B1

公开(公告)日：2007-08-22

申请号：EP00948512.9

申请日：2000-06-15

申请人： LAM RESEARCH CORPORATION

发明人： FISCHER, Andreas ,  KADKHODAYAN, Babak ,  KUTHI, Andras

IPC分类号： H01J37/32

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32577

摘要： The present invention provides a plasma processing apparatus, system, and method for providing RF power to a plasma processing chamber. The plasma processing system (300) includes an RF generator (310), a plasma chamber (304), a match network box (308), a first cable (314), a second cable (316), and means for electrically isolating (312) the match network box. The RF generator generates RF power for transmission to the plasma chamber. The plasma chamber receives the RF power for processing the wafer (302) and is characterized by an internal impedance during the plasma processing. The plasma chamber has one or more walls (344) for returning RF currents. The match network box is capable of receiving the RF currents and generates an impedance that matches the internal impedance of the plasma chamber to the impedance of the RF generator. The first cable is coupled between the RF generator and the match network box for transmitting RF power between the RF generator and the match network box. The second cable is coupled between the match network box and the plasma chamber for transmitting RF power between the match network and the plasma chamber. The second cable provides a return path for an RF return current from the plasma chamber to the match network box. The electrically isolating means electrically isolates the match network box from electrical contacts with the plasma chamber such that only the second cable provides the return path for the RF return current from the plasma chamber to the match network box.

公开(公告)号：EP1803504A2

公开(公告)日：2007-07-04

申请号：EP06256120.4

申请日：2006-11-29

申请人： Lam Research Corporation

发明人： Ravkin, Michael ,  Korolik, Mikhail ,  Redeker, Fred C. ,  Freer, Erik M. ,  Mikhaylichenko, Katrina ,  De Larois, John M.

IPC分类号： B08B3/08 ,  C11D11/00 ,  C11D17/00 ,  C11D3/20 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B08B7/02 ,  C11D9/00 ,  C11D9/02 ,  C11D9/267 ,  C11D11/0047 ,  C11D17/0013 ,  C11D17/0017 ,  C23G1/18 ,  G03F7/42 ,  H01L21/02057 ,  H01L21/02096

摘要： A method is provided for removing contamination from a substrate. The method includes applying a cleaning solution having a dispersed phase, a continuous phase and particles dispersed within the continuous phase to a surface of the substrate. The method includes forcing one of the particles dispersed within the continuous phase proximate to one of the surface contaminants. The forcing is sufficient to overcome any repulsive forces between the particles and the surface contaminants so that the one of the particles and the one of the surface contaminants are engaged. The method also includes removing the engaged particle and surface contaminant from the surface of the substrate. A process to manufacture the cleaning material is also provided.

摘要翻译： 提供了一种用于从基片去除污染物的方法。 该方法包括施加具有分散相，分散到基板的表面上的连续相内的连续相和颗粒的清洗液。 该方法包括迫使分散在连续相接近所述表面的污染物中的一个内的颗粒中的一种。 强迫足以克服所以没颗粒的所述一个和所述表面污染物的一个接合时，粒子和表面之间的污染物的任何排斥力。 因此，该方法包括从衬底的表面除去颗粒接合和表面的污染物。 因此，提供制造该清洁材料的方法。

公开(公告)号：EP1374277B1

公开(公告)日：2007-06-13

申请号：EP02719377.0

申请日：2002-03-29

申请人： LAM RESEARCH CORPORATION

发明人： VELTROP, Robert, G. ,  CHEN, Jian, J. ,  WICKER, Thomas, E.

IPC分类号： H01J37/32

CPC分类号： H01J37/32174 ,  H01J37/321

摘要： An inductive plasma processor includes an RF plasma excitation coil having plural windings, each having a first end connected in parallel to be driven by a single RF source via a single matching network. Second ends of the windings are connected to ground by termination capacitors, in turn connected by a lead to ground. A current sensor including a winding around a toroidal core is coupled to the lead between each termination capacitor and ground. The current sensor is surrounded by a grounded shield. There is minimum electromagnetic interference from an ambient RF environment to the current sensor, to provide an accurate current sensor.

公开(公告)号：EP1102137B1

公开(公告)日：2007-06-13

申请号：EP00310347.0

申请日：2000-11-22

申请人： LAM RESEARCH CORPORATION

发明人： Mooring, Benjamin W.

IPC分类号： G05B19/408 ,  H01L21/00 ,  G05B19/401 ,  G05B19/402

CPC分类号： G05B19/401 ,  G05B19/4083 ,  G05B2219/36405 ,  G05B2219/37283 ,  G05B2219/37512 ,  G05B2219/45031 ,  G05B2219/49299 ,  H01L21/681 ,  H01L21/682

公开(公告)号：EP1374286B1

公开(公告)日：2007-05-16

申请号：EP02759138.7

申请日：2002-03-21

申请人： LAM RESEARCH CORPORATION

发明人： HALSEY, Harlan, I. ,  JACOB, David, E.

IPC分类号： H01L21/00 ,  C23C16/44 ,  C23F4/00 ,  C30B35/00 ,  B01J3/02

CPC分类号： C23C16/4408 ,  C23C14/566 ,  C23C16/4401 ,  C23C16/45591

摘要： The present invention provides a diffuser (200) and a chamber for venting and/or pumping gas. The diffuser (200) includes a body (202), a reflector (204), and a set of vanes (210, 212). The body (200) includes a nozzle through a center portion and has a curved surface on an upper side to define an open space above the curved surface. The nozzle is arranged to allow a gas to flow through and expand in the nozzle. The reflector (204) is disposed over the nozzle and is arranged to reflect the gas from the nozzle into the open space in the body (202) while expanding the gas flow. The vanes (210, 212) further divide the flow into roughly equal portions. In this configuration, the flow of the gas is slowed in the nozzle, the reflector portion (204), and the open space in the body (202) between the vanes (210, 212) so that the gas flows out of the open space with substantially uniform low velocity.

公开(公告)号：EP1754252A1

公开(公告)日：2007-02-21

申请号：EP05760834.1

申请日：2005-05-27

申请人： LAM RESEARCH CORPORATION

发明人： YUN, Seokmin ,  ZHU, Ji ,  CIRIGLIANO, Peter ,  LEE, Sangheon ,  CHOI, Thomas, S. ,  LOEWENHARDT, Peter ,  WILCOXSON, Mark, H. ,  SADJADI, Reza ,  HUDSON, Eric, A. ,  TIETZ, James, V.

IPC分类号： H01L21/311 ,  G03F7/42

CPC分类号： H01L21/31116 ,  H01L21/31138 ,  H01L21/76802 ,  H01L21/76829

摘要： A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase uses first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The stripping phase for stripping the photoresist mask uses a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.

公开(公告)号：EP1053566B1

公开(公告)日：2007-02-14

申请号：EP98961796.4

申请日：1998-12-01

申请人： LAM RESEARCH CORPORATION

发明人： LEE, Changhun ,  YANG, Yun-Yen, Jack

IPC分类号： H01L21/311

CPC分类号： G03F7/427 ,  H01L21/31138

摘要： Methods and compositions for improving etch rate selectivity of photoresist to substrate material in a downstream microwave dry stripping process in the fabrication of semiconductor integrated (IC) circuits are provided. Significant improvement in selectivity is demonstrated with the addition of N2 to an etchant gas mixture of O2 AND CF4.

公开(公告)号：EP1734574A1

公开(公告)日：2006-12-20

申请号：EP06253004.3

申请日：2006-06-10

申请人： LAM RESEARCH CORPORATION

发明人： de Larios, John M. ,  Ravkin, Mike ,  Parks, John ,  Korolik, Mikhail ,  Redeker, Fred C.

IPC分类号： H01L21/677

CPC分类号： H01L21/67784 ,  H01L21/67057

摘要： A method for transporting a substrate is provided. In this method, a non-Newtonian fluid is provided and the substrate is suspended in the non-Newtonian fluid. The non-Newtonian fluid is capable of supporting the substrate. Thereafter, a supply force is applied on the non-Newtonian fluid to cause the non-Newtonian fluid to flow, whereby the flow is capable of moving the substrate along a direction of the flow. Apparatuses and systems for transporting the substrate using the non-Newtonian fluid also are described.

摘要翻译： 本发明提供一种用于输送基板的方法。 在此方法中，非牛顿流体被提供和基片悬浮于非牛顿流体。 非牛顿流体是能够支撑基材。 有后，供给力被施加于非牛顿流体，使非牛顿流体流，由此所述气流能够沿着流动的方向移动所述衬底。 用于使用所述非牛顿流体，从而输送所述基板装置和系统进行了描述。

公开(公告)号：EP1372907B1

公开(公告)日：2006-11-29

申请号：EP02723724.7

申请日：2002-03-28

申请人： LAM RESEARCH CORPORATION

发明人： SALDANA, Miguel A. ,  WILLIAMS, Damon, Vincent

IPC分类号： B24B37/04 ,  B24B41/06

CPC分类号： B24B37/32 ,  B24B37/16

摘要： A CMP system and methods reduce a cause of differences between an edge profile of a chemical mechanical polished edge of a wafer and a center profile of a chemical mechanical polished central portion of the wafer within the edge. The wafer is mounted on a carrier surface (210) of a wafer carrier (212) so that a wafer axis (224) of rotation is gimballed for universal movement relative to a spindle axis (218) of rotation of a wafer spindle (220) . A retainer ring (226) limits wafer movement on the carrier surface (210) perpendicular to the wafer axis. The retainer ring (226) is mounted on and movable relative to the wafer carrier (212) . A linear bearing (230) is configured with a housing (320) and a shaft (326) so that a direction of permitted movement between the wafer carrier (212) and the retainer ring (226) is only movement parallel to the wafer axis (224), so that a wafer plane and a retainer ring (226) may be co-planar.

公开(公告)号：EP1706898A2

公开(公告)日：2006-10-04

申请号：EP04818010.3

申请日：2004-12-10

申请人： LAM RESEARCH CORPORATION

发明人： FISCHER, Andreas ,  LOEWENHARDT, Peter

IPC分类号： H01L21/306 ,  B24B37/04 ,  B24B41/06 ,  B24B5/00 ,  B24B29/00 ,  C23F1/02

CPC分类号： H01L21/68735 ,  H01J37/32642 ,  H01L21/67069

摘要： A temperature-controlled hot edge ring assembly adapted to surround a substrate support in a plasma reaction chamber. The assembly includes a conductive lower ring, a ceramic intermediate ring, and an upper ring. The intermediate ring overlies the lower ring and is adapted to be attached via the lower ring to an RF electrode. The upper ring overlies the intermediate ring, and has an upper surface exposed to an interior of a plasma reaction chamber.