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    A method to create narrow trenches in dielectric materials
    51.
    发明公开
    A method to create narrow trenches in dielectric materials 有权
    一种用于在所述的介电材料制造窄沟槽方法

    公开(公告)号：EP1764830A3

    公开(公告)日：2009-02-18

    申请号：EP05447238.6

    申请日：2005-10-21

    Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM ( IMEC)

    Inventor： Beyer, Gerald

    IPC: H01L21/768 ,  H01L21/3105 ,  H01L21/311

    CPC classification number: H01L21/31111 ,  B81C1/00595 ,  B81C2201/0132 ,  B81C2201/0133 ,  H01L21/31633 ,  H01L21/76224 ,  H01L21/76816

    Abstract: The present invention relates to a method for the production of very small trenches in semiconductor devices.
    The formation of these small trenches is based on chemically changing the properties of a first dielectric layer locally, such that the side walls of a patterned hole in said first dielectric layer are converted locally and become etchable by a first etching substance. Subsequently a second dielectric material is deposited in the patterned structure and the damaged part of the first dielectric material is removed such that small trenches are obtained.
    The small trenches obtained by chemically changing the properties of a dielectric layer can be used as test vehicle to study barrier deposition, copper plating and seedlayer deposition within very small trenches (order 10-30 nm).

    VERFAHREN ZUR HERSTELLUNG EINER TORSIONSFEDER
    53.
    发明授权
    VERFAHREN ZUR HERSTELLUNG EINER TORSIONSFEDER 有权
    一种用于生产扭簧

    公开(公告)号：EP1198695B1

    公开(公告)日：2005-03-16

    申请号：EP00951413.4

    申请日：2000-07-20

    Applicant: LITEF GmbH

    Inventor： WIEMER, Maik ,  HILLER, Karla ,  BILLEP, Detlef ,  BRENG, Uwe ,  RYRKO, Bruno ,  HANDRICH, Eberhard

    IPC: G01C19/56 ,  G01P15/08

    CPC classification number: B81B3/0051 ,  B81B2201/0242 ,  B81C2201/0133 ,  G01C19/56 ,  G01P15/0888

    Abstract: The invention relates to a method for the production of a silicon torsion spring, whereby, for instance, the rotational speed in a microstructured torsion spring-mass system can be read. The invention aims at providing low torsional stiffness in comparison with a relatively high transversal stiffness in lateral and vertical direction. According to the invention, a wafer or wafer composite is used to produce a spring having a V-shaped cross section after masking by means of anisotropic wet-chemical etching, said spring extending preferably over the entire thickness of the wafer and being defined laterally by the [111] surfaces only. Two wafers or wafer composites thus prestructured are rotated by 180 DEG and bonded to one another by aligning them in a mirror-inverted manner in such a way that the desired X-shaped cross section is obtained. One advantage provided by the invention is that the technology used in the production of the laterally and vertically rigid rotational spring is comparatively simple.

    Merged-mask micro-machining process
    54.
    发明公开
    Merged-mask micro-machining process 有权
    所述的微机械的制造方法与交叉衰落掩模

    公开(公告)号：EP1510864A2

    公开(公告)日：2005-03-02

    申请号：EP04026039.0

    申请日：2000-07-13

    Applicant: Input/Output, Inc.

    Inventor： Yu, Lianzhong ,  Ried, Robert P. ,  Goldberg, Howard D. ,  Yu, Duli

    IPC: G03F7/00

    CPC classification number: G02B26/0816 ,  B81B2201/042 ,  B81C1/00396 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0109 ,  C23F1/02

    Abstract: The present invention provides merged-mask processes for fabricating micromachined devices in general and mirrored assemblies for use in optical scanning devices in particular. A method of fabricating a three dimensional structure, comprising, providing a substrate, applying a layer of a first masking material onto the substrate, applying a layer of a second masking material onto the layer of the first masking material, patterning the layer of the second masking material, applying a layer of a third masking material onto the portions not covered by the patterned layer of the second masking material, the layer of the third masking material is at least as thick as the combined thickness of the layers of the first and second masking materials, patterning the layers of the first and third masking materials, etching the exposed portions of the substrate, etching the exposed portions of the layers of the first and third masking materials and etching the exposed portions of the substrate.

    MERGED-MASK MICRO-MACHINING PROCESS
    55.
    发明授权
    MERGED-MASK MICRO-MACHINING PROCESS 有权
    麻省理工学院麻省理工学院ÜBERBLENDETENMASKEN

    公开(公告)号：EP1196788B1

    公开(公告)日：2004-12-22

    申请号：EP00945370.5

    申请日：2000-07-13

    Applicant: Input/Output, Inc.

    Inventor： YU, Lianzhong ,  RIED, Robert, P. ,  GOLDBERG, Howard, D. ,  YU, Duli

    IPC: G01P9/04 ,  G01P15/135 ,  G02B26/00 ,  C23F1/00 ,  G03F7/26 ,  G03F7/00

    CPC classification number: G02B26/0816 ,  B81B2201/042 ,  B81C1/00396 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2203/0109 ,  C23F1/02

    Abstract: The present invention provides merged-mask processes for fabricating micro-machined devices in general and mirrored assemblies for use in optical scanning devices in particular. The process includes (a) providing a substrate having a predetermined thickness; (b) applying a first masking layer on a first portion of the substrate and a second masking layer on a second portion of the substrate, said second masking layer being at least as thick as the first masking layer; (c) etching a portion of the second masking layer to provide a first exposed portion of the substrate; (d) etching the first exposed portion of the substrate to a first depth; (e) etching the second masking layer to provide a second exposed portion of the substrate; and (f) etching simultaneously the first exposed portion of the substrate to a second depth and the second exposed portion of the substrate to a first depth. The process further comprises patterning the first masking layer before applying the second masking layer to provide the second portion of the substrate for etching and etching the first masking layer to expose the second portion of the substrate. The first and second masking layers are applied prior to etching the substrate.

    Abstract translation: 本发明提供了用于一般地制造微机械装置和特别是用于光学扫描装置的镜面组件的合并掩模工艺。 一种制造三维结构的方法，包括：提供衬底，将第一掩蔽材料层施加到所述衬底上，将第二掩蔽材料层施加到所述第一掩模材料的所述层上，将所述第二掩模材料的所述层 掩模材料，将第三掩模材料层施加到未被第二掩模材料的图案化层覆盖的部分上，第三掩模材料的层至少与第一和第二掩模材料的层的组合厚度一样厚 掩模材料，图案化第一和第三掩模材料的层，蚀刻衬底的暴露部分，蚀刻第一和第三掩模材料的层的暴露部分并蚀刻衬底的暴露部分。

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