公开(公告)号：EP2305788B1

公开(公告)日：2014-07-16

申请号：EP10177316.6

申请日：2010-09-17

申请人： FUJIFILM Corporation

发明人： Takahashi, Tomonori ,  Takahashi, Kazutaka ,  Mizutani, Atsushi ,  Seki, Hiroyuki ,  Fushimi, Hideo ,  Kato, Tomoo

IPC分类号： C11D11/00 ,  C11D7/50 ,  C11D7/08

CPC分类号： G03F7/425 ,  C09K13/00 ,  C09K13/06 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3209 ,  C11D7/3245 ,  C11D7/34 ,  C11D7/5013 ,  C11D11/0047 ,  G03F7/422 ,  G03F7/423 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/31133 ,  H01L21/32134 ,  H01L21/32136 ,  H01L21/32138 ,  H01L21/32139

公开(公告)号：EP2615633A1

公开(公告)日：2013-07-17

申请号：EP11823588.6

申请日：2011-09-07

申请人： Wako Pure Chemical Industries, Ltd.

发明人： MIZUTA Hironori ,  URANO Yoji ,  KAKIZAWA Masahiko

IPC分类号： H01L21/304 ,  C09K3/18

CPC分类号： C09D5/00 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/022 ,  H01L21/3105 ,  H01L21/321

摘要： The purpose of the present invention to provide: a composition which can be used for water-repellent treating of the entire surface of a semiconductor substrate having a pattern formed by laminating a Si-containing insulating layer and a metal layer, at one time; and a method for water-repellent treatment of the semiconductor substrate surface using the composition.
The present invention relates to: (1) a composition for water-repellent treatment of a semiconductor substrate surface comprising a) at least one kind of a compound selected from the group consisting of a long-chain alkyl tertiary amine and a long-chain alkyl ammonium salt, b) a base or an acid generating agent, having a condensed ring structure or forming a condensed ring structure by generating a base or an acid and c) a polar organic solvent, and (2) a method for water-repellent treatment of the semiconductor substrate surface having the pattern formed by laminating the Si-containing insulating layer and the metal layer, using the composition.

摘要翻译： 本发明的目的在于提供：哪些可用于防水性处理患有由层叠含有Si-绝缘层和金属层，在同一时间形成图案的半导体衬底的整个表面上的组合物; 和用于防水处理使用该组合物的半导体衬底表面的方法。 本发明涉及：（1）一种半导体衬底表面，其包括a）至少一种的化合物的选自长链烷基叔胺和长链烷基中选择的斥水处理的组合物 铵盐，b）一种用于防水处理的碱或酸生成剂的，具有稠环结构或通过产生或酸，和c）极性有机溶剂中与碱形成的稠环结构，和（2）的方法 的具有通过层叠含有Si-绝缘层和金属层，使用该组合物形成的图案的半导体衬底表面。

公开(公告)号：EP2608249A1

公开(公告)日：2013-06-26

申请号：EP11818031.4

申请日：2011-07-26

申请人： Mitsubishi Gas Chemical Company, Inc.

发明人： SHIMADA, Kenji ,  MATSUNAGA, Hiroshi ,  ABE, Kojiro ,  YAMADA, Kenji

IPC分类号： H01L21/306 ,  H01L21/28 ,  H01L21/308 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L29/401 ,  C09K13/06 ,  C09K13/08 ,  H01L21/02068 ,  H01L21/28079 ,  H01L21/31111 ,  H01L21/32134 ,  H01L21/82345 ,  H01L21/823842 ,  H01L29/66545

摘要： According to the present invention, there is provided a process for producing a transistor having a high precision and a high quality with a high yield by selectively etching a natural silicon oxide film, and further by selectively etching a dummy gate made of silicon. The present invention relates to a process for producing a transistor using a structural body which includes a substrate, and a dummy gate laminate formed by laminating at least a high dielectric material film and a dummy gate made of silicon having a natural silicon oxide film on a surface thereof, a side wall disposed to cover a side surface of the laminate and an interlayer insulating film disposed to cover the side wall which are provided on the substrate, said process including an etching step using a specific etching solution and thereby replacing the dummy gate with an aluminum metal gate.

摘要翻译： 根据本发明，通过选择性地蚀刻天然氧化硅膜，并且进一步通过选择性地蚀刻由硅制成的虚拟栅极，提供了以高产率制造具有高精度和高质量的晶体管的方法。 本发明涉及一种使用包括基板的结构体制造晶体管的方法，以及通过将至少一层高介电材料膜和由硅制成的具有天然氧化硅膜的虚拟栅层叠在一起而形成的虚拟栅叠层 表面，设置成覆盖层压体的侧表面的侧壁和设置成覆盖设置在基板上的侧壁的层间绝缘膜，所述工艺包括使用特定蚀刻溶液的蚀刻步骤，从而替换伪栅极 与铝金属门。

公开(公告)号：EP2602815A1

公开(公告)日：2013-06-12

申请号：EP11814449.2

申请日：2011-07-19

申请人： SHOWA DENKO K.K.

发明人： SATO, Fuyuki ,  SAITO, Yasuo

IPC分类号： H01L21/304 ,  C11D1/04 ,  C11D1/14 ,  C11D1/34 ,  C11D3/04 ,  C11D3/20 ,  C11D3/33

CPC分类号： H01L21/30604 ,  C11D1/02 ,  C11D3/042 ,  C11D11/0047 ,  C23F1/28 ,  H01L21/02068 ,  H01L21/32134

摘要： A composition for the removal of nickel-platinum alloy metal, said composition being characterised by including 3-55 mass% of at least one kind selected from the group consisting of hydrochloric acid, hydrobromic acid, and nitric acid, 0.5-20 mass% of a chelating agent other than oxalic acid, 0.1-4 mass% of an anionic surfactant, and water; and also characterised by not including fluorine-containing compounds or hydrogen peroxide, and having a pH of 1 or less. Nickel-platinum alloy metal can be selectively removed without damaging silicon substrate material.

摘要翻译： 一种用于除去镍 - 铂合金金属的组合物，所述组合物的特征在于包括3-55质量％的选自盐酸，氢溴酸和硝酸中的至少一种，0.5-20质量％ 除草酸以外的螯合剂，0.1〜4质量％的阴离子表面活性剂和水; 并且还特征在于不包含含氟化合物或过氧化氢，并且具有1或更小的pH。 可以选择性地去除镍 - 铂合金金属，而不会损坏硅衬底材料。

公开(公告)号：EP2521165A1

公开(公告)日：2012-11-07

申请号：EP09852805.2

申请日：2009-12-28

申请人： Fujitsu Limited

发明人： KANKI, Tsuyoshi ,  NAKATA, Yoshihiro ,  KOBAYASHI, Yasushi

IPC分类号： H01L21/3205 ,  H01L23/12 ,  H01L23/52 ,  H05K3/24

CPC分类号： H01L21/76877 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/76834 ,  H01L21/76841 ,  H01L21/76852 ,  H01L21/76874 ,  H01L21/76883 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/00 ,  H01L2924/0002 ,  H05K3/24

摘要： [Object] To provide an interconnection structure and a method of forming the same, the interconnection structure capable of avoiding an increase in leakage current or an increase in interconnection resistance caused by oxidation, being less likely to have electromigration occur therein, and having a higher reliability than the conventional ones.
[Solving Means] After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu-N-R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu-N-R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

摘要翻译： 为了提供互连结构及其形成方法，能够避免泄漏电流增加或由氧化引起的互连电阻增加的互连结构不太可能发生电迁移，并且具有较高的 可靠性比传统的。 [解决方案]在基板上形成铜互连之后，通过进行酸清洗来激活铜互连的表面。 此后，将基板浸入BTA（苯并三唑）水溶液中以形成覆盖铜互连表面的保护膜。 此时，在铜互连的表面的晶界部分中形成Cu-N-R键（R为有机基团）。 此后，通过进行碱性清洗除去保护膜。 即使在保护膜被去除之后，Cu-N-R键也保留在铜互连表面的晶界部分中。 随后，对铜互连的表面进行激活处理，然后通过用NiP或CoWP对铜互连的表面进行化学电镀来形成阻挡层。

公开(公告)号：EP1851296A4

公开(公告)日：2011-01-19

申请号：EP06719661

申请日：2006-01-26

申请人： ADVANCED TECH MATERIALS

发明人： WALKER ELIZABETH ,  NAGHSHINEH SHAHRI ,  BARNES JEFFREY A ,  OLDAK EWA ,  PETERS DARRYL W ,  YANDERS KEVIN P

IPC分类号： C11D7/32 ,  C11D7/26 ,  C11D11/00 ,  H01L21/02 ,  H01L21/461

CPC分类号： H01L21/02071 ,  C11D7/06 ,  C11D7/26 ,  C11D7/264 ,  C11D7/265 ,  C11D7/32 ,  C11D7/3218 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074

公开(公告)号：EP2219882A1

公开(公告)日：2010-08-25

申请号：EP08850920.3

申请日：2008-09-29

申请人： EKC TECHNOLOGY, INC.

发明人： CUI, Hua

IPC分类号： B44C1/22

CPC分类号： H01L21/02068 ,  H01L21/02063 ,  H01L21/76811 ,  H01L21/76813

摘要： Compositions for removing and cleaning resist, etching residues, planarization residues, metal fluorides and/or metal oxides from a substrate are provided, the composition including a metal ion-free fluoride compound and water. The resist, etching residues, planarization residues, metal fluorides and/or metal oxides are generated during one or more patterning processes during which a metal hard mask is used.

公开(公告)号：EP1811549A3

公开(公告)日：2010-01-20

申请号：EP07290063.2

申请日：2007-01-18

申请人： STMicroelectronics (Crolles 2) SAS

发明人： Halimaoui, Aomar

IPC分类号： H01L21/283 ,  H01L21/321

CPC分类号： H01L21/32134 ,  H01L21/02068 ,  H01L21/28518

摘要： L'invention concerne un procédé de siliciuration comprenant : le dépôt d'au moins un métal 7 sur une région 3, 5, 6 contenant du silicium, la formation d'un siliciure de métal 70 et le retrait du reliquat de métal 8 n'ayant pas été siliciuré lors de la formation du siliciure de métal. Le retrait du reliquat de métal 8 comprend :
a) la transformation dudit reliquat de métal 8 en un alliage 10 contenant du germaniure dudit métal, et
b) le retrait dudit alliage 10 par dissolution dans une solution chimique.

公开(公告)号：EP1589568A3

公开(公告)日：2009-02-25

申请号：EP05015153.9

申请日：1999-03-15

申请人： SEMITOOL, INC.

发明人： Aegerter, Brian ,  Dundas, Curt T. ,  Jolley, Michael ,  Ritzdore, Tom L. ,  Curtis, Gary L.

IPC分类号： H01L21/3213 ,  H01L21/00 ,  H01L21/02

CPC分类号： H01L21/02087 ,  H01L21/02068 ,  H01L21/32134 ,  H01L21/6708

摘要： This invention provides a process for treating a workpiece (10) having a front side (12), a back side (14), and an outer perimeter (16). In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front (12) or back (14) sides of the workpiece (10). Exclusion and / or application of the processing fluids occurs by applying one or more processing fluids to the workpiece (10) as the workpiece (10) and corresponding reactor (1100) are spinning about an axis of rotation (A) that is generally parallel (or antiparallel) to the vector defining the face of the workpiece (10) being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.

公开(公告)号：EP1925021A1

公开(公告)日：2008-05-28

申请号：EP06810119.5

申请日：2006-09-07

申请人： EBARA CORPORATION

发明人： HAMADA, Satomi

IPC分类号： H01L21/304

CPC分类号： H01L21/02068 ,  H01L21/67046

摘要： An object of the present invention is to provide a cleaning member, a substrate cleaning apparatus and a substrate processing apparatus, which are adapted to work with a reduced amount of contaminants to be discharged from the cleaning member, to prevent inverse contamination in a substrate subject to the cleaning and to preserve a high cleaning power to the substrate in a stable manner. The object is accomplished by a cleaning member of a substrate cleaning apparatus for cleaning a surface of a substrate subject to the cleaning by using a relative motion between the surface of the substrate subject to the cleaning and the cleaning member brought into contact with the surface of the substrate, while supplying a cleaning liquid onto the surface of the substrate, the cleaning member comprising a core portion (23a) made of a waterproof material, wherein a surface of the core portion (23a) is covered with a porous polymeric material to define a coating layer (23b) . The porous polymeric material to be used may be selected form a group consisting of PVA polymers, acrylic acid polymers, other addition polymers, acryl amide polymers, polyoxyethylene polymers, polyether polymers, condensation polymers, polyvinyl pyrrolidone, polystyrene aurfonic acid, urethane resins, and polyurethane resins.