摘要:
The invention relates to a method of using a direct electron detector in a TEM, in which an image with a high intensity peak, such as a diffractogram or an EELS spectrum, is imaged on said detector. As known the high intensity peak may damage the detector. To avoid this damage, the centre of the image is moved, as a result of which not one position of the detector is exposed to the high intensity, but the high intensity is smeared over the detector, displacing the high intensity peak before damage results.
摘要:
A charged particle system comprises at least one charged particle source; a first multi aperture plate disposed downstream of the at least one charged particle source, the first multi aperture plate comprising a plurality of apertures; a second multi aperture plate disposed downstream of the first multi aperture plate, the second multi aperture plate comprising a plurality of apertures; a controller configured to selectively apply at least first and second voltage differences between the first and second multi aperture plates; wherein the at least one charged particle source and the first and second multi aperture plates are arranged such that each of a plurality of charged particle beamlets traverses an aperture pair, said aperture pair comprising one aperture of the first multi aperture plate and one aperture of the second multi aperture plate, wherein plural aperture pairs are arranged such that a center of the aperture of the first multi aperture plate is, when seen in a direction of incidence of the charged particle beamlet traversing the aperture of the first multi aperture plate, displaced relative to a center of the aperture of the second multi aperture plate.
摘要:
In order to correct measurement magnification and measurement position of a spectral image with high efficiency and with high accuracy using an electronic spectroscope and a transmission electron microscope regarding the spectral image formed in two orthogonal axes which are an amount of energy loss axis and a measurement position information axis; a method for correcting magnification and position and a system for correcting magnification and position, both of which are capable of correcting measurement magnification and measurement position of a spectral image with high efficiency and with high accuracy using an electronic spectroscope and a transmission electron microscope regarding the spectral image formed in two orthogonal axes which are an amount of energy loss axis and a measurement position information axis, are provided.
摘要:
Gas is supplied from positive pressure (10 5 Pa or more) to an analysis device of high vacuum (10 -2 Pa or less) precisely and stably, while keeping conditions constant and replicating the conditions, and performing switching to a desired gas within a short time. According to a gas introducing device and a method, a plurality of types of gases are synthesized in a mixing chamber, the synthesized gas is introduced and the pressure of the gas is reduced by a pressure reducing pump to a pressure ranging from 0.1 Pa to 0.1 MPa, and the depressurized gas is introduced to a gas analysis device through a switching operation using a gas switching valve.
摘要:
In order to correct measurement magnification and measurement position of a spectral image with high efficiency and with high accuracy using an electronic spectroscope and a transmission electron microscope regarding the spectral image formed in two orthogonal axes which are an amount of energy loss axis and a measurement position information axis; a method for correcting magnification and position and a system for correcting magnification and position, both of which are capable of correcting measurement magnification and measurement position of a spectral image with high efficiency and with high accuracy using an electronic spectroscope and a transmission electron microscope regarding the spectral image formed in two orthogonal axes which are an amount of energy loss axis and a measurement position information axis, are provided.
摘要:
in a scanning atom probe (100), a surface topography of a specimen (3) is firstly analyzed by a surface topography analyzing unit (20). In the next place, an extraction electrode (5) is aligned to a desired area to be analyzed of a specimen surface. In case of analyzing electronic state of the area to be analyzed, negative bias voltage is impressed onto the specimen (3) from a direct current high voltage supply (2) and field emitted electrons are detected by a screen (9). In case of analyzing atomic arrangement and composition of the area to be analyzed, positive voltage is impressed onto the specimen (3) from the direct current high voltage supply (2) and a pulse generator (1) and positive ions generated by field evaporation are detected by a position sensitive ion detector (11) or a relfectron type mass analyzer (13).
摘要:
The present invention facilitates semiconductor device fabrication by monitoring uniformity of beam current and angle of incidence at various locations throughout an ion beam (e.g., a wider portion of a ribbon beam). One or more uniformity detectors are employed within an ion implantation system (e.g., single wafer based system and/or a multiple wafer based system) and are comprised of a number of elements. The respective elements comprise an aperture that selectively obtains a beamlet from an incident ion beam and a pair of sensors that measure beam current as a function of the incoming angle of the ion beam. The angle of incidence at for particular elements can be determined at least partially from the measured beam current by the pairs of sensors. As a result, generation of an ion beam can be adjusted to improve uniformity as indicated and ion implantation can be performed with an improved uniformity and under tighter process controls.
摘要:
The charged particle beam device of this invention separately detects secondary signal particles emitted from the surface of a sample, dark field signal particles scattered within and transmitted through the sample, bright field signal particles transmitted through the sample without being scattered within the sample, and thereby allows the operator to observe the image with an optimum contrast according to applications. In order to detect only the dark field transmitted signal particles scattered within the sample, among the transmitted signal particles obtained by the primary charged particle beams having transmitted through the thin film sample, the device includes a transmitted signal conversion member having an opening through which the bright field transmitted signal particles not being scattered within the sample can pass, and a detection means for detecting signals colliding against the conversion member.
摘要:
Es wird ein Untersuchungssystem zum Abbilden eines in einer Objektebene anordenbaren Objektes vorgeschlagen, umfassend eine Beleuchtungseinrichtung (31), um einem begrenzten Feld des Objekts (3) Energie derart zuzuführen, daß geladene Teilchen von Orten des Feldes austreten, wobei das Feld in der Ebene des Objektes (3) verlagerbar ist, eine Deflektoreinrichtung (23, 24) zur Bereitstellung eines änderbaren Ablenkfeldes, um an Orten eines auswählbaren Bereiches (7) des Objektes (3) austretende geladene Teilchen durch einen festen vorbestimmten Strahlquerschnitt (27) zu führen, und einen derart im Strahlengang angeordneten ortsauflösenden Detektor (5), daß die geladenen Teilchen nach Durchlaufen der ersten Deflektoreinrichtung (23, 24) auf diesen treffen, wobei von verschiedenen Orten des Bereiches (7) austretende Teilchen auf den Austrittsorten zugeordnete verschiedene Orte des ortsauflösenden Detektors (5) abgebildet werden.