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704 条记录 (耗时 0.017 秒)

    Transistors with fluorine treatment
    63.
    发明公开
    Transistors with fluorine treatment 审中-公开
    具有氟处理的晶体管

    公开(公告)号：EP2312634A2

    公开(公告)日：2011-04-20

    申请号：EP11153385.7

    申请日：2006-07-07

    申请人： Cree, Inc.

    发明人： Wu, Yifeng ,  Moore, Marcia ,  Parikh, Primit ,  Wisleder, Tim

    IPC分类号： H01L29/778 ,  H01L21/338 ,  H01L29/207 ,  H01L29/40 ,  H01L29/20

    摘要： A high electron mobility transistor (HEMT), comprises a buffer layer; a barrier layer on said buffer layer; a two dimensional electron gas (2DEG) at the interface between said buffer layer and said barrier layer; and a negative ion region in said barrier layer.

    摘要翻译： 高电子迁移率晶体管（HEMT）包括缓冲层; 在所述缓冲层上的阻挡层; 在所述缓冲层和所述阻挡层之间的界面处的二维电子气（2DEG） 和在所述阻挡层中的负离子区域。

    SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD
    65.
    发明公开
    SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD 审中-公开
    半导体器件及其制造方法

    公开(公告)号：EP2133909A1

    公开(公告)日：2009-12-16

    申请号：EP07832928.1

    申请日：2007-12-03

    申请人： Kabushiki Kaisha Toshiba

    发明人： The designation of the inventor has not yet been filed

    IPC分类号： H01L21/338 ,  H01L21/3205 ,  H01L23/52 ,  H01L29/812

    CPC分类号： H01L29/772 ,  H01L21/76898 ,  H01L23/481 ,  H01L29/41758 ,  H01L29/812 ,  H01L2224/48091 ,  H01L2224/49175 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

    摘要： A semiconductor device, which reduces the earth inductance, and a fabrication method for the same is provided.
    The semiconductor device and the fabrication method for the same including: a gate electrode, a source electrode, and a drain electrode which are placed on a first surface of a semi-insulating substrate 11, and have a plurality of fingers; an earth conductor 26 placed on a second surface of an opposite side with the first surface; a gate terminal electrode 14, a source terminal electrode 18, and a drain terminal electrode 12 which are connecting a plurality of fingers, respectively, and formed for every the gate electrode, the source electrodes, and the drain electrode an active layer formed on the semi-insulating substrate 11 under the gate electrode, the source electrode, and the drain electrodes; a multi stage VIA hole composed of a small caliber VIA hole 30 near the first surface and a large caliber VIA hole 20 near the second surface; and an earth electrode 23 which is formed in an internal wall surface of the multistage VIA hole and the second surface, and is connected from an earth conductor placed at the second surface side for the source terminal electrode 18.

    COMPOUND SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
    66.
    发明公开
    COMPOUND SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME 有权
    化合物半导体器件及其制造方法

    公开(公告)号：EP2117040A1

    公开(公告)日：2009-11-11

    申请号：EP07715024.1

    申请日：2007-02-27

    申请人： Fujitsu Limited

    发明人： KIKKAWA, Toshihide

    IPC分类号： H01L21/338 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812

    CPC分类号： H01L29/7783 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7788

    摘要： A vertical type GaN series field effect transistor having excellent pinch-off characteristics is provided. A compound semiconductor device includes a conductive semiconductor substrate, a drain electrode formed on a bottom surface of the conductive semiconductor substrate, a current blocking layer formed on a top surface of the conductive semiconductor substrate, made of high resistance compound semiconductor or insulator, and having openings, an active layer of compound semiconductor burying the openings and extending on an upper surface of the current blocking layer, a gate electrode formed above the openings and above the active layer, and a source electrode formed laterally spaced from the gate electrode and formed above the active layer.

    摘要翻译： 提供了具有优良夹断特性的垂直型GaN系列场效应晶体管。 一种化合物半导体器件，包括导电半导体衬底，在导电半导体衬底的底表面上形成的漏电极，在导电半导体衬底的顶表面上形成的电流阻挡层，由高电阻化合物半导体或绝缘体制成，并且具有 开口，掩埋开口并在电流阻挡层的上表面上延伸的化合物半导体的有源层，形成在开口上方并且在有源层上方的栅电极以及与栅电极横向间隔开地形成并形成在上方的源电极 活动层。

    COMPOUND SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME
    69.
    发明公开
    COMPOUND SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME 审中-公开
    VERBUND-HALBLEITERANORDNUNG UND PROZESS ZU IHRER HERSTELLUNG

    公开(公告)号：EP2068355A1

    公开(公告)日：2009-06-10

    申请号：EP06810864.6

    申请日：2006-09-29

    申请人： Fujitsu Limited

    发明人： KANAMURA, Masahito

    IPC分类号： H01L21/338 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812

    CPC分类号： H01L29/66522 ,  H01L29/2003 ,  H01L29/42368 ,  H01L29/517 ,  H01L29/66462 ,  H01L29/7787

    摘要： A compound semiconductor device including an electron transport layer (12) that is formed on a substrate and includes a III-V nitride compound semiconductor, a gate insulating film (17) that is positioned above the compound semiconductor layer, and a gate electrode (18) that is positioned on the gate insulating film. The gate insulating film includes a first insulating film (15, 26) that includes oxygen, at least a single metal element selected from a metal bonding with the oxygen and forming a metal oxide having a dielectric constant no less than 10, and at least a single metal element selected from Si and Al.

    摘要翻译： 一种化合物半导体器件，包括形成在衬底上并包括III-V族氮化物化合物半导体的电子传输层（12），位于化合物半导体层上方的栅极绝缘膜（17）和栅电极（18） ），其位于栅极绝缘膜上。 栅绝缘膜包括：第一绝缘膜（15,26），其包括氧，至少一种金属元素，其选自与氧接合的金属，并形成介电常数不小于10的金属氧化物，以及至少一种 选自Si和Al的单金属元素。