公开(公告)号：EP3595419A1

公开(公告)日：2020-01-15

申请号：EP18764587.4

申请日：2018-02-06

申请人： IHI Corporation ,  National University Corporation Tokyo University of Agriculture and Technology

发明人： OKITA, Yoji ,  MURATA, Akira

IPC分类号： H05K7/20 ,  B64D13/00 ,  B64D47/00

摘要： The present disclosure is a heat radiator for an aircraft which cools a heat source installed in the aircraft, which includes a heat radiating part in which a contact surface comes into contact with a main flow, the contact surface being formed with a concave portion or a convex portion in which a surface thereof directed upstream in a flow direction of the main flow is curved in a plan view.

公开(公告)号：EP2952577B1

公开(公告)日：2019-06-19

申请号：EP14745765.9

申请日：2014-01-31

申请人： Tohoku University ,  Meiji Seika Pharma Co., Ltd. ,  National University Corporation Tokyo University of Agriculture and Technology

发明人： GOTO, Masafumi ,  MURAYAMA, Kazutaka ,  YAMAGATA, Youhei ,  WATANABE, Kimiko

IPC分类号： C12N5/071 ,  C12N1/00 ,  C12N5/07

公开(公告)号：EP3486940A1

公开(公告)日：2019-05-22

申请号：EP17827672.1

申请日：2017-07-12

申请人： National University Corporation Tokyo University of Agriculture and Technology ,  National Institute of Information and Communications Technology

发明人： SUDA, Yoshiyuki ,  TSUKAMOTO, Takahiro ,  MOTOHASHI, Akira ,  DEGURA, Kyohei ,  OKUBO, Katsumi ,  YAGI, Takuma ,  KASAMATSU, Akifumi ,  HIROSE, Nobumitsu ,  MATSUI, Toshiaki

IPC分类号： H01L21/203 ,  C23C14/06 ,  C23C14/34 ,  H01L21/329 ,  H01L21/331 ,  H01L21/336 ,  H01L21/338 ,  H01L29/161 ,  H01L29/737 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812 ,  H01L29/88

摘要： A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500 °C, and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600 °C, and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t≤0.881×x -4.79 , where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.

公开(公告)号：EP3187797B1

公开(公告)日：2018-10-17

申请号：EP15836401.8

申请日：2015-07-30

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： AKISAWA Atsushi

IPC分类号： F25B17/08

CPC分类号： F25B17/083 ,  Y02A30/278 ,  Y02B30/64

摘要： There has been a problem that because the size of an adsorption reactor is very big, the conventional adsorption chiller which uses six adsorption reactors becomes very big, and a wide installation space is needed. An adsorption chiller comprising an evaporator which generates cold heat by vaporizing a liquefied refrigerant, a first adsorption reaction section which adsorbs the vaporized refrigerant generated from the evaporator and then vaporizes the refrigerant again, a second adsorption reaction section which adsorbs the vaporized refrigerant generated from the first adsorption reaction section and then vaporizes the refrigerant again, and a condenser which, by cooling and liquefying the vaporized refrigerant generated from the second adsorption reaction section, supplies the refrigerant to the evaporator, wherein at least one of the first adsorption reaction section and the second adsorption reaction section includes at least two adsorption reactors, a first coupling pipe which couples the two adsorption reactors, and a first control valve which controls opening and closing of the first coupling pipe.

公开(公告)号：EP3296026A1

公开(公告)日：2018-03-21

申请号：EP16792805.0

申请日：2016-05-13

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： TAGAWA, Yoshiyuki ,  ONUKI, Hajime

IPC分类号： B05C5/00 ,  A61M5/30 ,  B41J2/015

CPC分类号： B05C5/02 ,  A61M5/30 ,  B01L3/56 ,  B01L2200/06 ,  B01L2200/0636 ,  B01L2400/0436 ,  B01L2400/0487 ,  B01L2400/0496 ,  B01L2400/086 ,  B05C5/00 ,  B41J2/015

摘要： A liquid jet discharge device includes: a narrow tube having a tube shaped body that is open at both ends, and in which a discharge liquid being disposed therein, the discharge liquid contacting at least at an inner face of the narrow tube at a contact angle of less than 90 degrees; a container in which a transmission medium being disposed at a base side thereof where one end of the narrow tube is disposed, so as to enable pressure to be transmitted to the discharge liquid; an adjustment mechanism that causes a liquid surface of the discharge liquid inside the narrow tube and an interface of the transmission medium outside the narrow tube and inside the container to be staggered in position along an axial direction of the narrow tube; and a generation mechanism that generates a pressure wave in the transmission medium such that a liquid jet is discharged from the discharge liquid inside the narrow tube.

摘要翻译： 一种液体喷射排出装置，其特征在于，具备：细管，其具有在两端开口的管状体，在内部配置有喷出液，该喷出液至少在该细管的内表面以接触角 小于90度; 容器，其中传输介质布置在其中设置有细管的一端的基部侧处，以使压力能够传递到排放液; 调节机构，其使所述细管内部的所述排出液的液面和所述细管外部的所述传送介质与所述容器内的界面在所述细管的轴向上错开位置; 以及产生机构，其在传输介质中产生压力波，使得液体射流从细管内的排放液排放。

公开(公告)号：EP3187797A1

公开(公告)日：2017-07-05

申请号：EP15836401.8

申请日：2015-07-30

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： AKISAWA Atsushi

IPC分类号： F25B17/08

CPC分类号： F25B17/083 ,  Y02A30/278 ,  Y02B30/64

摘要： There has been a problem that because the size of an adsorption reactor is very big, the conventional adsorption chiller which uses six adsorption reactors becomes very big, and a wide installation space is needed. An adsorption chiller comprising an evaporator which generates cold heat by vaporizing a liquefied refrigerant, a first adsorption reaction section which adsorbs the vaporized refrigerant generated from the evaporator and then vaporizes the refrigerant again, a second adsorption reaction section which adsorbs the vaporized refrigerant generated from the first adsorption reaction section and then vaporizes the refrigerant again, and a condenser which, by cooling and liquefying the vaporized refrigerant generated from the second adsorption reaction section, supplies the refrigerant to the evaporator, wherein at least one of the first adsorption reaction section and the second adsorption reaction section includes at least two adsorption reactors, a first coupling pipe which couples the two adsorption reactors, and a first control valve which controls opening and closing of the first coupling pipe.

摘要翻译： 由于吸附反应器的尺寸非常大，所以使用六个吸附反应器的传统吸附式制冷机存在非常大的问题，并且需要宽的安装空间。 1。一种吸附式制冷机，其特征在于，具备蒸发液化的制冷剂而使其产生冷热的蒸发器，吸附从蒸发器产生的蒸发制冷剂并再次使制冷剂蒸发的第一吸附反应部，吸附由 第一吸附反应部，然后再次使制冷剂汽化;以及冷凝器，通过冷却和液化从第二吸附反应部产生的汽化制冷剂，将制冷剂供应到蒸发器，其中，第一吸附反应部和第一吸附反应部中的至少一个 第二吸附反应部分包括至少两个吸附反应器，联接两个吸附反应器的第一联接管以及控制第一联接管的打开和关闭的第一控制阀。

公开(公告)号：EP3112848A1

公开(公告)日：2017-01-04

申请号：EP15752850.6

申请日：2015-02-10

申请人： National University Corporation Tokyo University of Agriculture and Technology

发明人： SUZUKI, Takayuki ,  MISAWA, Kazuhiko ,  OBARA, Yuki

IPC分类号： G01N21/65

CPC分类号： G01N21/65 ,  G01N2021/653

摘要： A phase sensitive detection mechanism that uses electrical processing is realized, and an optical detection device, an optical detection method, and a program that are capable of detecting faint light at high speed and with high sensitivity are provided by a simple configuration.
A light source section generates a first pulsed light. A filter section transmits a second pulsed light formed from a portion of a frequency spectrum exhibited by the first pulsed light, and reflects a third pulsed light formed from another portion of the frequency spectrum exhibited by the first pulsed light. A phase modulation section phase modulates the second pulsed light at plural phases. A multiplexing section produces a fourth pulsed light by multiplexing the third pulsed light with the second pulsed light phase modulated by the phase modulation section. A detector spectrally disperses and detects scattered light generated by radiating the fourth pulsed light onto a target object. An extraction section uses specific calculation processing to synchronize with the phase modulation in the phase modulation section, so as to extract a frequency spectrum of scattered light scattered based on the second pulsed light phase modulated by the phase modulation section from the frequency spectrum of the scattered light detected by the detector.

摘要翻译： 实现了使用电处理的相敏检测机构，并且通过简单的配置提供了能够高速且高灵敏度地检测微弱光的光学检测装置，光学检测方法和程序。 光源部分产生第一脉冲光。 滤波器部分传输由第一脉冲光所表现的一部分频谱形成的第二脉冲光，并且反射由第一脉冲光表现出的另一部分频谱形成的第三脉冲光。 相位调制部分以多个相位对第二脉冲光进行相位调制。 多路复用部分通过将第三脉冲光与由相位调制部分调制的第二脉冲光相复用来产生第四脉冲光。 检测器在光谱上分散并检测通过将第四脉冲光照射到目标物体而产生的散射光。 提取部分使用特定的计算处理以与相位调制部分中的相位调制同步，以从散射的频谱提取基于由相位调制部分调制的第二脉冲光而散射的散射光的频谱 检测器检测到的光。

公开(公告)号：EP3059336A1

公开(公告)日：2016-08-24

申请号：EP14843243.8

申请日：2014-09-10

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： C30B29/38

CPC分类号： C30B25/14 ,  C30B25/00 ,  C30B25/02 ,  C30B25/08 ,  C30B25/10 ,  C30B25/165 ,  C30B25/18 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

摘要： A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1 × 10 17 /cm 3 or lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0 × 10 -3 atm or higher onto the substrate, and growing a GaN crystal in the -C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200°C or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0 × 10 -3 atm or higher onto the substrate, and growing an AlN crystal in the -C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400°C or higher.

摘要翻译： 氮化物半导体晶体的直径为4英寸以上，翘曲为曲率半径为100μm以上，杂质浓度为1×10 17 / cm 3以下。 一种氮化物半导体晶体的制造方法，其特征在于，在基板上设置基板，将分压为9.0×10 -3 atm以上的三卤化镓气体供给到基板上，在基板上沿-C轴方向生长GaN晶体 其中GaN晶体的生长温度为1200℃以上，或者氮化物半导体晶体的制造方法包括提供基板，将分压为9.0×10 -3 atm以上的三卤化铝气体供给到 衬底，并且在衬底上在-C轴方向上生长AlN晶体，其中AlN晶体的生长温度为1400℃或更高。

公开(公告)号：EP3054037A1

公开(公告)日：2016-08-10

申请号：EP14849461.0

申请日：2014-09-18

申请人： Tamura Corporation ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： GOTO, Ken ,  SASAKI, Kohei ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： C30B29/16 ,  C23C16/40 ,  C23C16/448 ,  C30B25/14 ,  H01L21/365

CPC分类号： C30B25/165 ,  C23C16/40 ,  C23C16/4488 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/24

摘要： Provided are: a method for efficiently growing a high-quality, large diameter β-Ga 2 O 3 -based single crystal film; and a crystalline layered structure having a β-Ga 2 O 3 -based single crystal film grown using this growing method. As one embodiment, the present invention provides a method for growing a β-Ga 2 O 3 -based single crystal film by using the HVPE method, and including a step for exposing a Ga 2 O 3 -based substrate (10) to a gallium chloride gas and an oxygen-containing gas, and growing a β-Ga 2 O 3 -based single crystal film (12) on the principal surface (11) of the Ga 2 O 3 -based substrate (10) at a growing temperature of 900° C or higher.

摘要翻译： 本发明提供：用于有效地生长高质量的方法，大直径²-的Ga 2 O 3系单晶膜; 和具有使用该生长方法生长的²-的Ga 2 O 3系单晶膜的结晶层状结构。 作为一个实施例，本发明提供了一种方法，用于通过利用HVPE法生长²-的Ga 2 O 3系单晶的电影，并且包括用于曝光的Ga 2 O 3系基材（10），以镓的工序 氯化物气体和基底物在生长温度气体，和Ga的2 O 3（10）的主表面（11）上生长²-的Ga 2 O 3系单晶膜（12）的含氧 900℃或更高。

公开(公告)号：EP2784486A1

公开(公告)日：2014-10-01

申请号：EP12851172.2

申请日：2012-10-24

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： IWAI, Toshiaki ,  WATARAI, Toshiharu

IPC分类号： G01N21/49 ,  G01N21/17

CPC分类号： G01N15/1429 ,  G01B9/02044 ,  G01J3/4412 ,  G01J9/02 ,  G01J2003/4418 ,  G01N15/0211 ,  G01N21/51 ,  G01N2015/0222

摘要： Light emitted from a low-coherence light source (10) is split into two beams by an optical coupler (20). One of the two beams split by the optical coupler (20) is applied to a sample medium (40). The other of the two beams split by the optical coupler (20) is subjected to phase modulation by a reference mirror (50) and a vibration element (52). The beam (reference beam) subjected to phase modulation and a scattered beam from the sample medium (40) are wavelength-resolved by a diffraction grating (62), and the spectrum of interference light of the reference beam and the scattered beam is detected by a photodetector (70). A calculation section (80) calculates an intensity signal corresponding to the position of each scattering point in the sample medium (40) on the basis of the detected spectrum, calculates a power spectrum corresponding to the position of each scattering point on the basis of a temporal change in the intensity signal corresponding to the position of each scattering point, and calculates a diffusion coefficient of the particles corresponding to the position of each scattering point on the basis of the calculated power spectrum.

摘要翻译： 从低相干光源（10）发射的光被光耦合器（20）分成两束。 由光耦合器（20）分开的两个光束中的一个被施加到样本介质（40）。 由光耦合器（20）分离的两个光束中的另一个由参考反射镜（50）和振动元件（52）进行相位调制。 经过相位调制的光束（参考光束）和来自样品介质（40）的散射光束由衍射光栅（62）进行波长分解，并且参考光束和散射光束的干涉光谱由 一个光电探测器（70）。 计算部分（80）基于检测到的光谱来计算与样本介质（40）中的每个散射点的位置相对应的强度信号，基于每个散射点的位置计算与功率谱相对应的功率谱 根据计算出的功率谱，计算与各散射点的位置对应的强度信号的时间变化，并计算与各散射点的位置对应的粒子的扩散系数。