公开(公告)号：EP1112588A1

公开(公告)日：2001-07-04

申请号：EP99968735.3

申请日：1999-09-07

Applicant: VEECO INSTRUMENTS INC.

Inventor： HEGDE, Hari, S. ,  RISCA, Mihai, S. ,  HAYES, Alan, V. ,  NAVY, Abraham, J. ,  FREMGEN, Roger, P.

IPC: H01J37/32 ,  H01J37/317

CPC classification number: H01J37/32623 ,  H01J37/3178 ,  H01J37/3266

Abstract: An electromagnetic field generator and method of operation for ion beam deposition of magnetic thin-film materials is presented. A combination of open frame electromagnetic field generator elements provides precise control of magnetic field directionality. This control enables deposition of oriented magnetic films with minimal directionality error. The magnetic field direction may be oriented to enable the deposition of alternating layers of directionally oriented magnetic films. An open frame element reduces the weight of the electromagnetic field generator while truncated corners reduce diagonal clearance that may be required in a vacuum chamber. An open frame design also enables the electromagnetic field generator to surround and thus remain clear of the active deposition area; the electromagnetic field generator can thus be shielded from accumulation of sputtered material. Shielding from accumulation of sputter material reduces maintenance requirements.

公开(公告)号：EP3918106A1

公开(公告)日：2021-12-08

申请号：EP20759383.1

申请日：2020-02-19

Applicant: Veeco Instruments Inc.

Inventor： PACIER, Michael, W. ,  SERSHEN, Michael, J. ,  BERTUCH, Adam, F. ,  LECORDIER, Laurent ,  BUDEN, Thousif Ahamad, Khan Hosakote ,  RAO, Ramesh Prasad, Manchaladore Narahari

IPC: C23C16/54 ,  C23C14/56 ,  H01L21/67 ,  H01L21/673 ,  H01L21/677

公开(公告)号：EP3811400A1

公开(公告)日：2021-04-28

申请号：EP19822301.8

申请日：2019-06-19

Applicant: Veeco Instruments Inc.

Inventor： NULMAN, Kenji ,  YANNUZZI, Mark ,  TYLER, Phillip ,  FIJAL, Jonathan ,  BREINGAN, William, Gilbert ,  TADDEI, John ,  BAVEROV, Nicholas ,  SWALLOW, James ,  ORLANDO, Christopher ,  VIT, Paul ,  HOFMEISTER, Christopher ,  DIGGS, Tremayne

IPC: H01L21/67

公开(公告)号：EP2625306B1

公开(公告)日：2020-09-30

申请号：EP11831472.3

申请日：2011-10-04

Applicant: Veeco Instruments Inc.

Inventor： KAMEYAMA, Ikuya

IPC: C23C14/46 ,  C23C14/34 ,  H01J27/02 ,  H01J37/08

公开(公告)号：EP3620551A1

公开(公告)日：2020-03-11

申请号：EP19195844.6

申请日：2019-09-06

Applicant: Veeco Instruments, Inc.

Inventor： KWON, Daewon

IPC: C23C16/52 ,  C30B25/16 ,  H01L21/67

Abstract: Systems and methods for detecting complementary sets of data during a chemical vapor deposition process are disclosed herein. The systems and methods reduce use of limited window space in a chemical vapor deposition reactor, while obtaining useful data for a variety of phases in the epitaxial growth of a structure therein.

公开(公告)号：EP3471130A1

公开(公告)日：2019-04-17

申请号：EP18193548.7

申请日：2009-12-03

Applicant: Veeco Instruments Inc.

Inventor： BELOUSOV, Mikhail ,  MITROVIC, Bojan ,  MOY, Keng

IPC: H01L21/205 ,  C23C16/455 ,  C23C16/458

Abstract: A flow inlet element (22) for a chemical vapor deposition reactor (10) is formed from a plurality of elongated tubular elements (64, 65) extending side-by-side with one another in a plane transverse to the upstream to downstream direction of the reactor. The tubular elements have inlets for ejecting gas in the downstream direction. A wafer carrier (14) rotates around an upstream to downstream axis. The gas distribution elements may provide a pattern of gas distribution which is asymmetrical with respect to a medial plane (108) extending through the axis.

公开(公告)号：EP3369119A1

公开(公告)日：2018-09-05

申请号：EP16860835.4

申请日：2016-10-27

Applicant: Veeco Instruments Inc.

Inventor： PRANJPE, Ajit ,  DRUZ, Boris ,  ROOK, Katrina ,  SRINIVASAN, Narasimhan

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L43/00 ,  H01L43/02 ,  H01L43/08

Abstract: This disclosure provides various methods for improved etching of spin-transfer torque random access memory (STT-RAM) structures. In one example, the method includes (1) ion beam etch of the stack just past the MTJ at near normal incidence, (2) a short clean-up etch at a larger angle in a windowed mode to remove any redeposited material along the sidewall that extends from just below the MTJ to just above the MTJ, (3) deposition of an encapsulant with controlled step coverage to revert to a vertical or slightly re-entrant profile from the tapered profile generated by the etch steps, (4) ion beam etch of the remainder of the stack at near normal incidence while preserving the encapsulation along the sidewall of the MTJ, (5) clean-up etch at a larger angle and windowed mode to remove redeposited materials from the sidewalls, and (6) encapsulation of the etched stack.

公开(公告)号：EP3338299A1

公开(公告)日：2018-06-27

申请号：EP16837689.5

申请日：2016-08-16

Applicant: Veeco Instruments Inc.

Inventor： URBAN, Lukas ,  KRISHNAN, Sandeep

IPC: H01L21/02 ,  H01L21/324 ,  H01L21/205

CPC classification number: G06F17/5009 ,  C23C16/4584 ,  C23C16/52 ,  G06F2217/80

Abstract: Improvements to the heating uniformity of a wafer carrier for a chemical vapor deposition (CVD) system can be made based on a computational thermal model built according physical and operational characteristics of the CVD system. Operation of the thermal model is simulated, where a process recipe to be carried out on the CVD system is modeled, including heat transfers taking place in the virtual CVD system, to produce a set of thermal-spatial non-uniformities in at least one region of interest of a virtual wafer carrier. Structural corrections to be made to the pocket floor of each of the at least one wafer retention pocket are determined based on the set of thermal-spatial non-uniformities and on a predefined thermal-pocket floor relation that defines at least one design rule for correcting the pocket floor to achieve an increase in thermal uniformity throughout the at least one region of interest.

公开(公告)号：EP2882883B1

公开(公告)日：2017-10-04

申请号：EP13752822.0

申请日：2013-08-05

Applicant: Plansee SE ,  Veeco Instruments Inc.

Inventor： PLANKENSTEINER, Arno ,  FEIST, Christian ,  BOGUSLAVSKIY, Vadim ,  GURARY, Alexander I. ,  CHANG, Chenghung Paul

IPC: C23C16/458 ,  C23C16/46 ,  H01L21/67

CPC classification number: H05B1/00 ,  C23C16/4585 ,  C23C16/46 ,  H01L21/67115

Abstract: A terminal for mechanical support of a heating element, includes a base device, a mounting device, the mounting device adapted to support the heating element, and a support device connecting the base device to the mounting device, the support device allowing displacement of the heating element about a radial axis and less than about 10% displacement of the heating element about a tangential and/or axial axis.

Abstract translation: 一种用于加热元件的机械支撑的端子，包括基座装置，安装装置，适于支撑加热元件的安装装置以及将基座装置连接到安装装置的支撑装置，支撑装置允许加热 元件围绕径向轴线并小于加热元件围绕切向和/或轴向轴线的约10％的位移。

公开(公告)号：EP2562290A3

公开(公告)日：2016-10-19

申请号：EP12193897.1

申请日：2009-08-28

Applicant: Veeco Instruments Inc.

Inventor： Volf, Boris ,  Soderman, Breid ,  Armour, Eric, A.

IPC: C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  H01L21/67

CPC classification number: H01L21/68735 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/67103 ,  H01L21/68764 ,  H01L21/68771

Abstract: In chemical vapor deposition apparatus, a wafer carrier (32) has a top surface (34) holding the wafers and a bottom surface (36) heated by radiant heat transfer from a heating element (28). The bottom surface (36) of the wafer carrier is non-planar due to features such as depressions (54) so that the wafer carrier has different thickness at different locations. The thicker portions of the wafer carrier have higher thermal resistance. Differences in thermal resistance at different locations counteract undesired non-uniformities in heat transfer to the wafer. The wafer carrier may have pockets with projections (553, 853) for engaging spaced-apart locations on the edges of the wafer.