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    PRESSURE SENSOR MODULE
    72.
    发明公开
    PRESSURE SENSOR MODULE 审中-公开
    压力传感器模块

    公开(公告)号：EP3279630A1

    公开(公告)日：2018-02-07

    申请号：EP16182611.0

    申请日：2016-08-03

    Applicant: ams AG

    Inventor： Daamen, Roel ,  Vijayakumar, Kailash ,  Bouman, Hendrik ,  Pijnenburg, Remco Henricus Wilhelmus ,  van Lippen, Twan

    IPC: G01L9/00 ,  B81C1/00

    CPC classification number: G01L9/0048 ,  B81B2201/0264 ,  B81C1/00039 ,  G01L9/0072

    Abstract: A pressure sensor module (10) comprises a base electrode (14) surrounding at least a part of a bottom electrode (15), and an anchor arrangement (20) on top of the base electrode (14) comprising at least two electrically conductive walls (19) that both surround at least a part of the bottom electrode (15). The pressure sensor module (10) further comprises an electrically conductive layer (18) that covers at least the bottom electrode (15) and the anchor arrangement (20) such that a cavity (17) is formed between the bottom electrode (15), the anchor arrangement (20) and the electrically conductive layer (18). The proportionate area of the electrically conductive walls (19) in a cross section extending from the surface (32) of the inner wall of the anchor arrangement (20) facing the cavity (17) to the surface (33) of the outermost wall of the anchor arrangement (20) facing away from the cavity (17) in a plane parallel to the plane of the bottom electrode (15) is equal to or less than 10 %.

    Abstract translation: 一种压力传感器模块（10），包括围绕底部电极（15）的至少一部分的底部电极（14）和位于底部电极（14）顶部上的锚定装置（20），该锚定装置包括至少两个导电壁 （19），其均包围所述底部电极（15）的至少一部分。 所述压力传感器模块（10）还包括导电层（18），所述导电层至少覆盖所述底部电极（15）和所述锚定装置（20），使得在所述底部电极（15），所述底部电极 锚定装置（20）和导电层（18）。 导电壁（19）在从锚定装置（20）的内壁的面向空腔（17）的表面（32）延伸到空腔（17）的最外壁的表面（33）的横截面中的比例区域 在平行于底部电极（15）的平面的平面中远离空腔（17）的锚定装置（20）等于或小于10％。

    AN IMPROVED PRESSURE SENSOR
    73.
    发明授权
    AN IMPROVED PRESSURE SENSOR 有权
    一个改进的压力传感器

    公开(公告)号：EP2994733B1

    公开(公告)日：2018-01-31

    申请号：EP14727070.6

    申请日：2014-05-08

    Applicant: Murata Manufacturing Co., Ltd.

    Inventor： KUISMA, Heikki

    IPC: G01L9/00

    CPC classification number: G01L9/0072 ,  B81B3/007 ,  B81B2201/0264 ,  B81B2203/0127 ,  G01L7/082 ,  G01L9/0042 ,  G01L9/0048 ,  G01L9/0054 ,  G01L9/0073

    Abstract: A microelectromechanical pressure sensor structure wherein the length of the diaphragm is at least three times the width of the diaphragm. The oblong diaphragm experiences a minimized difference between lateral bending of the wafer and of the diaphragm along the width of the diaphragm. In a perpendicular direction, the diaphragm is at least three times longer due to which it accurately aligns with the bending form of the wafer. Due to this, the total error caused by bending of the structure is significantly reduced and a more robust structure is achieved. At the same time, the longer diaphragm provides mode deflected area for detection and thus significantly improves sensitivity of the device.

    MEMS DEVICE FORMED BY AT LEAST TWO BONDED STRUCTURAL LAYERS AND MANUFACTURING PROCESS THEREOF
    74.
    发明公开
    MEMS DEVICE FORMED BY AT LEAST TWO BONDED STRUCTURAL LAYERS AND MANUFACTURING PROCESS THEREOF 审中-公开
    至少两层粘结结构层形成的MEMS器件及其制造工艺

    公开(公告)号：EP3263517A1

    公开(公告)日：2018-01-03

    申请号：EP16206887.8

    申请日：2016-12-23

    Applicant: STMicroelectronics S.r.l.

    Inventor： ALLEGATO, Giorgio ,  OGGIONI, Laura ,  GARAVAGLIA, Matteo ,  SOMASCHINI, Roberto

    IPC: B81C1/00

    CPC classification number: B81C1/00269 ,  B81B3/0097 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/042 ,  B81B2203/0315 ,  B81C3/001 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/037

    Abstract: A microelectromechanical device having a first substrate (330) of semiconductor material and a second substrate (340) of semiconductor material having a bonding recess (331) delimited by projecting portions (334), monolithic therewith. The bonding recess forms a closed cavity (324) with the first substrate. A bonding structure (336) is arranged within the closed cavity and is bonded to the first and second substrates. A microelectromechanical structure (345) is formed in a substrate chosen between the first and second substrates. The device is manufactured by forming the bonding recess in a first wafer; depositing a bonding mass in the bonding recess, the bonding mass having a greater depth than the bonding recess; and bonding the two wafers.

    Abstract translation: 一种具有半导体材料的第一衬底（330）和半导体材料的第二衬底（340）的微机电装置，该半导体材料具有由与其整体形成的突出部分（334）限定的键合凹槽（331）。 结合凹部与第一衬底形成封闭空腔（324）。 接合结构（336）布置在封闭的空腔内并且接合到第一和第二基板。 微电子机械结构（345）形成在第一和第二衬底之间选择的衬底中。 该器件通过在第一晶片中形成键合凹槽来制造; 将结合物质沉积在结合凹部中，结合物质具有比结合凹部更大的深度; 并粘合两个晶片。

    MICROPHONE AND PRESSURE SENSOR PACKAGE AND METHOD OF PRODUCING THE MICROPHONE AND PRESSURE SENSOR PACKAGE
    75.
    发明公开
    MICROPHONE AND PRESSURE SENSOR PACKAGE AND METHOD OF PRODUCING THE MICROPHONE AND PRESSURE SENSOR PACKAGE 审中-公开
    麦克风和压力传感器组件以及制造麦克风和压力传感器组件的方法

    公开(公告)号：EP3261366A1

    公开(公告)日：2017-12-27

    申请号：EP16175477.5

    申请日：2016-06-21

    Applicant: ams International AG

    Inventor： Besling, Willem Frederik Adrianus

    IPC: H04R19/00 ,  H04R19/04 ,  H04R1/04 ,  B81B7/00

    CPC classification number: H04R19/005 ,  B81B7/0048 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0264 ,  H01L2224/48137 ,  H04R1/04 ,  H04R19/04

    Abstract: The microphone and pressure sensor package comprises a carrier (1) with an opening (16), a microphone device (20) including a diaphragm (21) and a perforated back plate (22) arranged above the opening (16), an ASIC device (6), and a cover (9) forming a cavity (17) between the carrier (1) and the cover (9). The ASIC device (6) and the microphone device (20) are arranged in the cavity (17). A sensor element (7) provided for a pressure sensor is integrated in the ASIC device (6). The pressure outside the cavity (17) is transferred to the sensor element (7) through the opening (16), the diaphragm (21), and the back plate (22).

    Abstract translation: 麦克风和压力传感器封装包括具有开口（16）的载体（1），包括隔膜（21）的麦克风装置（20）和布置在开口（16）上方的穿孔背板（22），ASIC装置 （6）以及在载体（1）和盖（9）之间形成空腔（17）的盖（9）。 ASIC装置（6）和麦克风装置（20）被布置在空腔（17）中。 为压力传感器提供的传感器元件（7）集成在ASIC装置（6）中。 腔17外部的压力通过开口16，隔膜21和背板22传递到传感器元件7。

    SENSOR DEVICE INCLUDING A PRESSURE SENSOR AND A HUMIDITY SENSOR
    77.
    发明公开
    SENSOR DEVICE INCLUDING A PRESSURE SENSOR AND A HUMIDITY SENSOR 审中-公开
    传感器装置包括一个压力传感器和一个湿度传感器

    公开(公告)号：EP3239681A1

    公开(公告)日：2017-11-01

    申请号：EP16166845.4

    申请日：2016-04-25

    Applicant: Sensirion AG

    Inventor： GRAF, Markus ,  HUMMEL, René ,  SCHUMM, Johannes ,  PLUESS, Marcel ,  SU, Wang-Shen ,  TANG, Tsung-Lin ,  LIN, Chung-Hsien

    IPC: G01L9/00 ,  G01L19/00 ,  B81B7/02 ,  B81C1/00 ,  G01N27/22

    CPC classification number: G01L19/0092 ,  B81B7/02 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81C1/00246 ,  G01L9/0073 ,  G01N27/223

    Abstract: A sensor device comprises a semiconductor substrate (11), which may have integrated CMOS processing circuitry (12). A layer stack (13) is disposed on the semiconductor substrate, the layer stack comprising a sequence of dielectric oxide layers (D1-D7) and metallization layers (M1-M7). A pressure sensor (30) is provided, the pressure sensor comprising at least a first pressure sensor electrode (31) that is formed by a portion of one of the metallization layers (M7) in the layer stack. On the same semiconductor substrate, a humidity sensor (40) is also provided, comprising at least a first humidity sensor electrode (41) that is formed by a portion of the same or a different metallization layer (M6, M7) in the layer stack. The sensor device can be formed on one single substrate by commercially available CMOS processing techniques.

    Abstract translation: 传感器装置包括可具有集成CMOS处理电路（12）的半导体衬底（11）。 在半导体衬底上设置叠层（13），该叠层包括一系列电介质氧化物层（D1-D7）和金属化层（M1-M7）。 提供压力传感器（30），所述压力传感器包括至少第一压力传感器电极（31），所述第一压力传感器电极（31）由层堆叠中的一个金属化层（M7）的一部分形成。 在同一半导体衬底上，还提供湿度传感器（40），其包括至少第一湿度传感器电极（41），所述第一湿度传感器电极（41）由层堆叠中的相同或不同金属化层（M6，M7）的一部分形成 。 传感器装置可以通过市售的CMOS处理技术形成在单个基板上。

    PRESSURE SENSOR INCLUDING DEFORMABLE PRESSURE VESSEL(S)
    79.
    发明公开
    PRESSURE SENSOR INCLUDING DEFORMABLE PRESSURE VESSEL(S) 审中-公开
    压力传感器，包括变形压力容器（S）

    公开(公告)号：EP3186610A1

    公开(公告)日：2017-07-05

    申请号：EP15836993.4

    申请日：2015-08-27

    Applicant: KIONIX, INC.

    Inventor： ADAMS, Scott, G. ,  BLACKMER, Charles, W. ,  LYNCH, Kristin, J.

    IPC: G01L9/00

    CPC classification number: G01L9/003 ,  B81B3/0072 ,  B81B2201/0264 ,  B81C1/00 ,  B81C1/00666 ,  B81C2201/0167 ,  G01L9/0027 ,  G01L9/0055 ,  G01L9/0073 ,  G01L9/008 ,  G01L9/0082 ,  G01L13/00 ,  G01L13/02 ,  G01P15/006 ,  G01P15/08 ,  H01L21/00

    Abstract: Techniques are described herein that perform pressure sensing using pressure sensor(s) that include deformable pressure vessel(s). A pressure vessel is an object that has a cross section that defines a void. A deformable pressure vessel is a pressure vessel that has at least one curved portion that is configured to structurally deform (e.g., bend, shear, elongate, etc.) based on a pressure difference between a cavity pressure in a cavity in which at least a portion of the pressure vessel is suspended and a vessel pressure in the pressure vessel.

    Abstract translation: 本文描述了使用包括可变形压力容器的压力传感器执行压力感测的技术。 压力容器是具有限定空隙的横截面的物体。 可变形压力容器是具有至少一个弯曲部分的压力容器，该弯曲部分被配置为基于腔体中的腔体压力之间的压力差来结构性地变形（例如，弯曲，剪切，伸长等），其中至少一个 压力容器的一部分被悬置并且压力容器中的容器压力被悬置。

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