公开(公告)号：EP1607202A1

公开(公告)日：2005-12-21

申请号：EP04714928.1

申请日：2004-02-26

申请人： OHMI, Tadahiro

发明人： OHMI, Tadahiro ,  KITANO, Masafumi ,  TANAHASHI, Naoki

IPC分类号： B29C33/38 ,  B29C45/20 ,  B29C45/46 ,  C23C8/14 ,  C23C8/18

CPC分类号： B29C33/56 ,  B29C33/38 ,  B29C45/37 ,  B29L2031/3475 ,  C23C8/10 ,  C23C8/14 ,  C23C8/18 ,  C23C30/00 ,  Y10S425/808

摘要： A member for a resin molding machine wherein it has a face contacting with a molten resin, and at least a part of the face is covered with a film of an oxide of a base material of the face or a component contained in the base material. The use of the member in the molding of a resin allows the prevention of the incorporation of a contaminant associated with the deterioration of a melt of the resin into a molded article from the resin.

摘要翻译： 一种树脂成型机的构件，其具有与熔融树脂接触的面，并且所述面的至少一部分被所述面的基材的氧化物或所述基材中所含的成分的膜覆盖。 在树脂成型中使用该构件允许防止与树脂的熔融物劣化相关的污染物与树脂混入模制品中。

公开(公告)号：EP1585002A1

公开(公告)日：2005-10-12

申请号：EP04702837.8

申请日：2004-01-16

申请人： FUJIKIN INCORPORATED ,  OHMI, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： OHMI, Tadahiro ,  SUGIYAMA, Kazuhiko ,  MIZUSAWA, Kenetu, c/o Tokyo Electron Ltd ,  TAKAHASHI, Eiji, c/o Tokyo Electron Ltd ,  UNO, Tomio, c/o Fujikin Incorporated ,  NISHINO, Kouji, c/o Fujikin Incorporated ,  DOHI, Ryousuke, c/o Fujikin Incorporated ,  IKEDA, Nobukazu, c/o Fujikin Incorporated ,  NAGASE, Masaaki, c/o Fujikin Incorporated

IPC分类号： G05D7/06

CPC分类号： H01L21/67023 ,  G05D7/0635 ,  Y10T137/6416 ,  Y10T137/6606 ,  Y10T137/7761

摘要： A high precision flow rate control of a clustering fluid such as the HF gas and the like to be supplied to a vacuum chamber and the like is made possible in the flow rate range of 3∼300SCCM using a pressure type flow rate control device.
Specifically, disclosed herein is a method of controlling the flow rate of the clustering fluid using a pressure type flow rate control device in which the flow rate Q of the gas passing through an orifice is computed as K=KP 1 (where K is a constant) with the gas being in a state where the ratio P 2 /P 1 between the gas pressure P 1 on the upstream side of the orifice and the gas pressure P 2 on the downstream side of the orifice is held at a value not higher than the critical pressure ratio of the gas wherein the association of molecules is dissociated either by heating the afore-mentioned pressure type flow rate control device to the temperature higher than 40°C, or by applying the diluting gas to the clustering fluid to make it lower than a partial pressure so that the clustering fluid is permitted to pass through the afore-mentioned orifice in a monomolecular state.

公开(公告)号：EP1552885A1

公开(公告)日：2005-07-13

申请号：EP03754111.7

申请日：2003-10-14

申请人： Fujikin Incorporated ,  Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  IKEDA, Nobukazu, c/o Fujikin Incorporated ,  MORIMOTO, Akihiro, c/o Fujikin Incorporated ,  KITANO, Masafumi, c/o Fujikin Incorporated ,  MINAMI, Yukio, c/o Fujikin Incorporated ,  KAWADA, Koji, c/o Fujikin Incorporated

IPC分类号： B01J37/02 ,  B01J21/04 ,  B01J23/42 ,  B01J37/10 ,  C01B5/00

CPC分类号： B01J12/007 ,  B01J21/04 ,  B01J23/42 ,  B01J37/0225 ,  B01J37/0226 ,  B01J37/08 ,  C01B5/00

摘要： A barrier film which has uniform thickness and excellent adhesiveness to the base material and superbly functions to protect a platinum film can be formed on the inner wall surface of a moisture-generating reactor at ease and at a low cost.
The moisture-generating reactor in which hydrogen and oxygen are reacted to generate moisture without high temperature combustion is made of an alloy containing aluminum. A principally aluminum oxide (Al 2 O 3 )-composed barrier film is formed by applying an aluminum selective oxidation treatment on the inner wall surface of the moisture-generating reactor, and thereafter a platinum film is stacked on and stuck to the barrier film so that a platinum coating catalyst layer is formed.

摘要翻译： 阻挡膜，其中有均匀的厚度和优异的粘合性的基体材料和优越的功能来保护的铂膜，可以安心湿气产生反应器的内壁表面和以低成本来形成。 在其中氢气和氧气的湿气产生反应器中反应以产生无高温燃烧的水分被由含有铝的合金制成。 甲原则上氧化铝（Al2O3）-composed屏障电影通过施加到铝选择性氧化处理的湿气产生反应器的内壁表面上形成，并且此后铂电影堆叠在和粘在阻挡膜-所以做了铂 催化剂涂层形成。

公开(公告)号：EP1544902A1

公开(公告)日：2005-06-22

申请号：EP03808884.5

申请日：2003-09-11

申请人： Fujikin Incorporated ,  Ohmi, Tadahiro ,  PRE-TECH CO., LTD

发明人： OHMI, Tadahiro ,  SHIRAI, Yasuyuki ,  FUJITA, Takumi c/o PRE-TECH CO., LTD. ,  MINAMI, Yukio c/o Fujikin Incorporated ,  IKEDA, Nobukazu c/o Fujikin Incorporated ,  MORIMOTO, Akihiro c/o Fujikin Incorporated ,  KAWADA, Koji c/o Fujikin Incorporated

IPC分类号： H01L21/304

CPC分类号： H01L21/67034 ,  H01L21/02052

摘要： A rotary silicon wafer cleaning apparatus capable of enhancing the stability of silicon wafer through perfecting of the hydrogen termination for silicon wafer having undergone cleaning operation with the use of chemicals and pure water. The rotary silicon wafer cleaning apparatus comprises a silicon wafer drying equipment, the silicon wafer drying equipment composed of a mixed gas heating unit for heating a mixed gas consisting of a hydrogen gas, the hydrogen gas containing gaseous hydrogen in an amount of 0.05 vol.% or more, and an inert gas and a hydrogen radical generating unit provided with a platinum coating film capable of forming hydrogen radicals at portion in contact with the heated mixed gas, wherein a mixed gas containing hydrogen radicals generated by the hydrogen radical generating unit is jetted on a rotating silicon wafer after cleaning operation so that the drying and hydrogen termination treatment of the external surface of silicon wafer are simultaneously carried out.

摘要翻译： 一种旋转硅晶片清洁装置，其能够通过使用化学品和纯水完成已进行清洁操作的硅晶片的氢终端，从而提高硅晶片的稳定性。 旋转硅晶片清洁装置包括硅晶片干燥设备，硅晶片干燥设备由用于加热由氢气组成的混合气体的混合气体加热单元，含有0.05体积％的气态氢气的氢气， 以上的惰性气体和氢游离基发生单元，其具有能够与加热的混合气体接触的部分形成氢自由基的铂涂膜，其中喷射含有由氢自由基产生单元产生的氢自由基的混合气体 在清洁操作之后的旋转硅晶片上，从而同时进行硅晶片的外表面的干燥和氢终止处理。

公开(公告)号：EP0942214B1

公开(公告)日：2005-04-06

申请号：EP97913482.2

申请日：1997-12-01

申请人： FUJIKIN Inc. ,  Tohoku Steel Co., Ltd ,  OHMI, Tadahiro ,  TAKAHASHI, Migaku

发明人： OHMI, Tadahiro ,  TAKAHASHI, Migaku ,  YAMAJI, Michio, Fujikin Inc. ,  TANIGAWA, Takeshi, Fujikin Inc. ,  IKEDA, Nobukazu, Fujikin Inc. ,  DOI, Ryosuke, Fujikin Inc. ,  NISHINO, Koji, Fujikin Inc. ,  YASUMOTO, Naofumi, Fujikin Inc. ,  FUKUDA, Hiroyuki, Fujikin Inc. ,  UNO, Tomio, Fujikin Inc. ,  YANAI, Yasuyuki, Tohoku Steel Co., Ltd

IPC分类号： F16K31/06

CPC分类号： F16K31/082 ,  F16K7/14 ,  F16K31/0655 ,  F16K31/0672 ,  Y10T137/8242

摘要： A fluid control valve, which can control a fluid having a pressure in the order of 10 kg/cm , has a response time in the order of several milliseconds and can be made small in size, and a fluid supply/exhaust system that provides less gas counterflow in the event of a plurality of valves being used. A fluid control valve of the invention controls a fluid moving (a) in a valve body by closing and opening a portion between a valve seat and a valve holder by means of a drive unit. The drive unit comprises a rod-shaped shaft for application of pressure through the valve seat and the valve holder, and a member (a) fixed around the rod-shaped shaft. The member (a) is made from a magnetic material, and has a space between it and the shaft. A coil provided in parallel to the shaft moves the member (a) up and down by electromagnetic induction, and makes use of a spring force to close and open a portion between the valve seat and the valve holder.

摘要翻译： 能够控制压力为10kg / cm 2左右的流体的流体控制阀具有数毫秒量级的响应时间，并且可以使其尺寸较小，并且流体供给/排出系统 在使用多个阀的情况下提供较少的气体逆流。 本发明的流体控制阀通过借助于驱动单元关闭和打开阀座和阀座之间的部分来控制流体在阀体内移动（a）。 驱动单元包括用于通过阀座和阀座施加压力的杆状轴以及固定在杆状轴周围的构件（a）。 构件（a）由磁性材料制成，并且在其与轴之间具有空间。 与轴平行设置的线圈通过电磁感应使构件（a）上下运动，并且利用弹簧力来关闭和打开阀座与阀座之间的部分。

公开(公告)号：EP1439571A1

公开(公告)日：2004-07-21

申请号：EP02775374.8

申请日：2002-10-18

申请人： Goto, Naohisa ,  Ohmi, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： GOTO, Naohisa ,  OHMI, Tadahiro ,  HIRAYAMA, M., Tohoku University ,  GOTO, Tetsuya, Tohoku University

IPC分类号： H01L21/205 ,  C23C16/511 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32229 ,  H01J37/32192

摘要： A microwave plasma processing apparatus includes a processing vessel, a microwave generator, a waveguide guiding a microwave formed by the microwave generator, and a microwave emitting member emitting the microwave with wavelength compression by a retardation plate, wherein the waveguide has a single microwave output opening in a location corresponding to a central par of the microwave emitting member.

摘要翻译： 的微波等离子体处理装置包括处理容器，微波发生器，波导引导由微波发生器形成的微波，以及微波发射部件由一个相位差板发射具有波长压缩的微波，worin波导具有单个微波输出开口 在一个位置对应于所述微波发射部件的中央公园。

公开(公告)号：EP1403913A1

公开(公告)日：2004-03-31

申请号：EP02743801.9

申请日：2002-07-03

申请人： Ohmi, Tadahiro ,  Tokyo Electron Limited

发明人： OHMI, Tadahiro ,  SUGAWA, Shigetoshi Tohoku University ,  HIRAYAMA,M. Ind. Creation Hatchery Ctr.Tohoku Univ ,  GOTO,T. New Ind. Creation Hatchery Ctr.Tohoku Univ

IPC分类号： H01L21/324

CPC分类号： H01L21/67115 ,  H01L21/3003 ,  H01L21/324 ,  H01L21/67098 ,  H01L21/67109 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/66757 ,  H01L29/78603

摘要： A substrate processing apparatus has a processing space provided with a holding stand for holding a substrate to be processed. A hydrogen catalyzing member is arranged in the processing space to face the substrate and for decomposing hydrogen molecules into hydrogen radicals H*. A gas feeding port is arranged in the processing space on an opposite side of the hydrogen catalyzing member to the substrate for feeding a processing gas including at least hydrogen gas. An interval between the hydrogen catalyzing member and the substrate on the holding stand is set less than the distance that the hydrogen radicals H* can reach.

公开(公告)号：EP1376669A1

公开(公告)日：2004-01-02

申请号：EP02708711.3

申请日：2002-03-28

申请人： Ohmi, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： OHMI, Tadahiro ,  HIRAYAMA, Masaki, c/o New Ind. Creation Hatch.Cent ,  SUGAWA, Shigetoshi, c/o Manag. of Science & Techn. ,  GOTO, Tetsuya, c/o NEW IND. CR. HATCHERY CTER

IPC分类号： H01L21/31 ,  H05H1/46 ,  H01L21/3065

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/32229 ,  H01J37/3244

摘要： In a microwave plasma processing apparatus, the reflection of microwave by the joint unit between the microwave supplying waveguide and the microwave antenna is reduced by providing a taper surface or a member having a medium permittivity between the microwave supplying'waveguide and the microwave antenna so as to moderate an impedance change. Accordingly, the efficiency of power supplying is improved, and reduced discharge ensures stable formation of plasma.

公开(公告)号：EP1347507A1

公开(公告)日：2003-09-24

申请号：EP01272910.9

申请日：2001-12-27

申请人： Ohmi, Tadahiro

发明人： OHMI, Tadahiro ,  SUGAWA, Shigetoshi; c/o DEP. ELEC. ENG. ,  HIRAYAMA, Masaki; c/o DEP. ELEC. ENG. ,  SHIRAI, Yasuyuki; c/o DEP. ELEC. ENG.

IPC分类号： H01L21/318 ,  H01L27/10 ,  H01L29/78

CPC分类号： H01L21/28202 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28211 ,  H01L21/2822 ,  H01L21/30604 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185 ,  H01L21/823462 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78645

摘要： In a film formation method of a semiconductor device including a plurality of silicon-based transistors or capacitors, there exist hydrogen at least in a part of the silicon surface in advance, and the film formation method removes the hydrogen by exposing the silicon surface to a first inert gas plasma. Thereafter a silicon compound,layer is formed on the surface of the silicon gas by generating plasma while using a mixed gas of a second inert gas and one or more gaseous molecules, such that there is formed a silicon compound layer containing at least a pat of the elements constituting the gaseous molecules, on the surface of the silicon gas.

摘要翻译： 在包括多个硅基晶体管或电容器的半导体器件的成膜方法中，预先至少在硅表面的一部分中存在氢，并且成膜方法通过将硅表面暴露于 第一惰性气体等离子体。 此后，通过在使用第二惰性气体和一种或多种气态分子的混合气体的同时产生等离子体，在硅气体的表面上形成硅化合物层，使得形成含有至少一个 构成气体分子的元素在硅气体的表面上。

公开(公告)号：EP1300878A1

公开(公告)日：2003-04-09

申请号：EP02708714.7

申请日：2002-03-28

申请人： Ohmi, Tadahiro ,  TOKYO ELECTRON LIMITED

发明人： OHMI, Tadahiro ,  HIRAYAMA, M., c/o N.I.C.H.C Tohoku University, ,  SUGAWA, S., Tohoku University, ,  GOTO, T., c/o N.I.C.H.C. c/o Tohoku University,

IPC分类号： H01L21/31 ,  H05H1/46 ,  H01L21/3065

CPC分类号： H01J37/32211 ,  H01J37/32192

摘要： In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate (16) is formed by a material having a thermal expansion rate close to the wave retardation plate (18), or depositing a metal on a dielectric plate constituting the wave retardation plate (18). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.

摘要翻译： 在使用径向线槽天线的微波等离子体处理装置中，槽板（16）由具有接近波延迟板（18）的热膨胀率的材料形成，或者在构成 波长延迟板（18）。 波长相对板和构成微波辐射面的槽板之间的紧密接触被改善，以防止异常放电。