摘要:
The field programmable read-only memory device comprises a memory cell having a switching element for storing bit information. The switching element provides a switchable electrical connection between word line and a bit line and comprises a static body and a moveable connecting element. The switchable electrical connection is non-volatile.
摘要:
Disclosed herein is an apparatus for sensing characteristics of an object. In a preferred embodiment, the apparatus comprises an array, wherein the array comprises a plurality of nanoscale hybrid semiconductor/metal devices which are in proximity to an object, each hybrid semiconductor/metal device being configured to produce a voltage in response to a perturbation, wherein the produced voltage is indicative of a characteristic of the object. Any of a variety of nanoscale EXX sensors can be selected as the hybrid semiconductor/metal devices in the array. With such an array, ultra high resolution images of nanoscopic resolution can be generated of objects such as living cells, wherein the images are indicative of a variety of cell biologic processes.
摘要:
An object of the present invention is to provide an involatile memory device that is capable of writing and erasing data at a time other than during manufacturing, and a semiconductor device having the memory device. Also, an object of the present invention is to provide a compact-sized and inexpensive involatile memory device and a semiconductor device having the memory device. The memory device of the present invention has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair; of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound, to cause a phase change of the organic compound from a first phase to a second phase.
摘要:
An electromechanical switch (2) is described, which comprises a conductive body (4) and a plurality of carbon nanotubes (8) being separate to each other, each of the carbon nanotubes (8) being connected to at least one common terminal electrode (12,18,20) with at least one of its ends, wherein in an open state of the switch (2) each of the carbon nanotubes (8) substantially projects along a surface (6) of the conductive body (4) and keeps up a gap (10) to said surface (6), and wherein in a closed state of the switch (2) at least one carbon nanotube (8) is bend in a direction of the surface (6) to close an electrical contact between said terminal electrode (12,18,20) and the conductive body (4). The size (D1...D4) of the gap (10) between the respective carbon nanotube (8) and the surface (6) is different for each one of the plurality of carbon nanotubes (8).
摘要:
In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible- resistance switching element coupled to the steering element by fabricating a carbon nano- tube ("CNT") seeding layer by depositing a silicon-germanium layer above the substrate, patterning and etching the CNT seeding layer, and selectively fabricating CNT material on the CNT seeding layer. Numerous other aspects are provided.
摘要:
This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.