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公开(公告)号：EP2153462B1
公开(公告)日：2018-08-01
申请号：EP08760680.2
申请日：2008-06-06
IPC分类号： H01L21/762 , H01L21/84
CPC分类号： H01L21/8258 , H01L21/76254 , H01L21/823807 , H01L21/823878 , H01L21/84
摘要： A method for producing a hybrid substrate, including a support substrate, a continuous buried insulator layer and, on this continuous layer, a hybrid layer including alternating zones of a first material and at least one second material, wherein these two materials are different by their nature and/or their crystallographic characteristics. The method forms a hybrid layer, including alternating zones of first and second materials, on a homogeneous substrate, assembles this hybrid layer, the continuous insulator layer and the support substrate, and eliminates a part at least of the homogeneous substrate, before or after the assembling.
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公开(公告)号：EP1831923B1
公开(公告)日：2019-05-22
申请号：EP05825588.6
申请日：2005-12-22
IPC分类号： H01L21/762 , H01L21/02
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3.发明授权PROCÉDÉ D'OBTENTION D 'UNE STRUCTURE COMPRENANT UN SUBSTRAT SUPPORT ET UNE COUCHE ULTRAMINCE 有权PROCÉDÉD'OBTENTION D'UNE STRUCTURE COMPRENANT UN SUBSTRAT SUPPORT ET UNE COUCHE ULTRAMINCE
公开(公告)号：EP1631984B1
公开(公告)日：2017-08-23
申请号：EP04767238.1
申请日：2004-06-03
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/76254 , H01L21/76259
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公开(公告)号：EP3166132A1
公开(公告)日：2017-05-10
申请号：EP16197394.6
申请日：2016-11-04
发明人： MORICEAU, Hubert , IMBERT, Bruno , BLOT, Xavier
IPC分类号： H01L21/18 , H01L21/20 , H01L21/762
CPC分类号： H01L24/83 , H01L21/187 , H01L21/2007 , H01L21/76251 , H01L33/0079 , H01L2224/83894 , H01L2224/83935 , H01L2924/1032
摘要： L'invention concerne un procédé de fabrication comprenant les étapes suivantes :
a) fournir un premier substrat comprenant une première face dite face avant (11), ladite face avant étant faite d'un semi-conducteur de type III-V,
b) fournir un second substrat,
c) former une couche d'oxyde radicalaire sur ladite face avant, du premier substrat par exécution d'une oxydation radicalaire,
d) assembler, par une étape de collage direct, le premier substrat et le second substrat de manière à former un assemblage comprenant la couche d'oxyde radicalaire intercalée entre les premier et second substrats,
e) exécuter un traitement thermique destinée à renforcer l'interface de l'assemblage formée à l'étape d), et à faire disparaître, au moins partiellement, la couche d'oxyde radicalaire.摘要翻译： 本发明涉及一种制造方法，该制造方法包括以下步骤：a）提供包括第一所谓正面（11）的第一衬底，所述正面由III-V族半导体制成，b）提供 第二衬底，c）通过进行自由基氧化在所述第一衬底的所述前表面上形成自由基氧化物层，d）通过直接键合步骤将所述第一衬底和所述第二衬底组装到 形成包括介于第一基板和第二基板之间的基氧化物层的组件，e）进行旨在加强步骤d）中形成的组件的界面的热处理，并且至少部分地 ，自由基氧化层。
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公开(公告)号：EP1692716B1
公开(公告)日：2019-11-20
申请号：EP04816510.4
申请日：2004-12-06
IPC分类号： H01L21/58 , H01L21/98 , H01L25/065
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6.发明授权PROCEDE D'OBTENTION D'UNE COUCHE TRES MINCE PAR AMINCISSEMENT PAR AUTO-PORTAGE PROVOQUE 有权一种用于生产薄层BY非常挑起SELBSTRAGUNG
公开(公告)号：EP1631982B1
公开(公告)日：2015-04-08
申请号：EP04742879.2
申请日：2004-06-03
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/76254
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公开(公告)号：EP2210258A1
公开(公告)日：2010-07-28
申请号：EP08804254.4
申请日：2008-09-16
CPC分类号： G01Q60/22 , B29D11/00009 , B29D11/00346 , G01Q70/12 , G11B7/1374 , G11B7/1387
摘要： The invention generally pertains to the field of solid immersion lenses for optical applications in high resolution microscopy. The lens of the invention includes a spherical sector (1) limited by a planar surface (11) and an object (2) having nanometric dimensions arranged on the planar surface at the focus of said solid immersion lens. A light-opaque layer (3) having a central opening (31) with nanometric dimensions can be provided on the planar surface, said opening being centred on the focus of the solid immersion lens. The nano-object can be a tube or a thread having a cylindrical shape. The lens of the invention can be made using lithography techniques.
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8.发明授权
公开(公告)号：EP1774589B1
公开(公告)日：2010-07-28
申请号：EP05782182.9
申请日：2005-06-29
发明人： MORICEAU, Hubert , FEUILLET, Guy , POCAS, Stéphane
IPC分类号： H01L21/98 , H01L25/065 , H01L21/18
CPC分类号： H01L24/29 , H01L24/32 , H01L24/83 , H01L27/14634 , H01L27/1469 , H01L2224/04026 , H01L2224/05009 , H01L2224/29082 , H01L2224/29117 , H01L2224/29138 , H01L2224/29155 , H01L2224/29164 , H01L2224/83193 , H01L2224/83801 , H01L2224/8381 , H01L2224/8383 , H01L2224/83894 , H01L2224/9202 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01057 , H01L2924/01058 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/10329 , Y10T156/10 , H01L2924/01014 , H01L2924/01028 , H01L2924/01049 , H01L2924/01031 , H01L2924/3512 , H01L2924/00 , H01L2924/00014
摘要： The invention relates to a method for assembling, by molecular adhesion, a first substrate and a second substrate along the contact faces, the contact face of the first substrate having an electrically conductive layer on at least a portion of its surface. The inventive method comprises the following steps: depositing a connecting layer on at least a portion of the electrically conductive layer, said connecting layer being capable of ensuring a molecular adhesion with an area of the contact face of the second substrate and capable of being combined with the electrically conductive layer in order to form a conductive alloy; placing the connecting layer of the first substrate in contact with the area of the contact face of the second substrate and bonding it by molecular adhesion; transforming, on all or a portion of its width, all or part of the electrically conductive layer with all or part of the connecting layer and with at least a portion of the width of the area of the contact face over all or part of the surface of the second substrate in order to form a conductive alloy area.
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公开(公告)号：EP1774588B1
公开(公告)日：2010-07-14
申请号：EP05782045.8
申请日：2005-06-29
IPC分类号： H01L21/98 , H01L25/065 , H01L27/146
CPC分类号： H01L27/14636 , H01L24/83 , H01L27/14634 , H01L33/0079 , H01L2224/83801 , H01L2224/83894 , H01L2924/01079 , H01L2924/01087 , H01L2924/07811 , Y10T29/49126 , H01L2924/3512 , H01L2924/00
摘要： The invention relates to an assembling method for enabling localized electrical connections between areas situated on a face of a first substrate and corresponding areas situated on a face of a second substrate, said faces facing one another and at least one of the substrates having a surface topography. The method is characterized by the following steps consisting of: forming an intermediate layer comprising at least one burying layer on the face of the substrate or of the substrates having a surface topography in order to make it/them topographically compatible with the molecular bonding of these faces of the substrates to one another, the resistivity and/or thickness of the intermediate layer being chosen for enabling said localized electrical connections; placing the two faces in contact, the substrates being positioned in a manner that enables them to ensure the electrical connections between the areas situated on the first substrate and the corresponding areas situated on the second substrate, and; bonding the faces of the first and second substrate by molecular adhesion.
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公开(公告)号：EP1378003B1
公开(公告)日：2017-11-08
申请号：EP02732806.1
申请日：2002-04-11
IPC分类号： H01L21/18 , H01L21/762 , H01L21/306 , H01L21/304 , H01L21/324 , H01L21/265 , H01L21/78 , H01L21/68
CPC分类号： H01L21/7813 , H01L21/6835 , H01L21/76254 , H01L21/76259 , H01L2221/68318 , H01L2221/68359 , H01L2221/68363 , H01L2924/19041 , Y10T156/11
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