摘要:
A lens system, especially a projection lens system for a microlithographic projection illumination system, comprising at least one fluoride crystal lens. The disruptive influence of birefringence is reduced by using a lens which is a lens (100) with a lens axis which is approximately perpendicular in relation to the crystal planes {100} or the equivalent crystal planes of the fluoride crystal. In lens systems consisting of at least two fluoride crystal lenses, it is useful to arrange the fluoride crystal lenses in such a way that they are twisted in relation to each other. The lens axes of the fluoride crystal lenses can thus point in crystal direction (111) or (110), in addition to direction (100). It is also possible to reduce the disruptive influence of birefringence by using groups with twisted (100) lenses and groups with other twisted lenses (111) or other twisted (110) lenses. The disruptive influence of birefringence can be reduced further by providing the optical element with a compensating coating.
摘要:
An optical system, in particular an illumination system or a projection lens of a microlithographic exposure system, according to one aspect of the present invention has an optical system axis (OA) and at least one element group (200) consisting of three birefringent elements (211 ,212,213) each of which being made of optically uniaxial material and having an aspheric surface, wherein a first birefringent element (211 ) of said group has a first orientation of its optical crystal axis, a second birefringent element (212) of said group has a second orientation of its optical crystal axis, wherein said second orientation can be described as emerging from a rotation of said first orientation, said rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof, and a third birefringent element (213) of said group has a third orientation of its optical crystal axis, wherein said third orientation can be described as emerging from a rotation of said second orientation said rotation not corresponding to a rotation around the optical system axis by an angle of 90° or an integer multiple thereof.
摘要:
Optical system (1) : with a first optical subsystem (3) comprising at least a first birefringent optical element (7), with a second optical subsystem (5) comprising at least a second birefringent optical element (9), wherein between the first optical subsystem and the second optical subsystem an optical retarding system (13) with at least a first optical retarding element (15) is arranged, which introduces a ratardation of one-half of a wavelength between two mutually orthogonal states of polarization.
摘要:
A projection objective of a microlithographic projection exposure apparatus has a high index refractive optical element (L3) with an index of refraction greater than 1.6. This element (L3) has a volume and a material related optical property which varies over the volume. Variations of this optical property cause an aberration of the objective. In one embodiment at least 4 optical surfaces are provided that are arranged in at least one volume (L3') which is optically conjugate with the volume of the refractive optical element. Each optical surface comprises at least one correction means, for example a surface deformation or a birefringent layer with locally varying properties, which at least partially corrects the aberration caused by the variation of the optical property.
摘要:
A projection objective (100) of a microlithographic projection exposure apparatus, serving to project an image of a mask that can be set in position in an object plane (OP) onto a light-sensitive coating layer that can be set in position in an image plane (IP), wherein the projection objective is designed to operate in an immersion mode, produces at least one intermediate image (IMI) and comprises an optical subsystem (130) on the image-plane side which projects said intermediate image (IMI) into the image plane with an image-plane-side projection ratio βi, wherein said image-plane-side projection ration βi,has an absolute value of at least 0.3.
摘要:
The invention relates to an optical system, in particular an objective or an illumination system for a microlithographic projection exposure apparatus, which in particular also permits the use of crystal materials with a high refractive index while reducing the influence of intrinsic birefringence on the imaging properties. In particular the invention relates to an optical system having at least two lens groups (10-60) with lenses of intrinsically birefringent material, wherein the lens groups (10-60) respectively comprise a first subgroup with lenses in a (lOO)-orientation and a second subgroup with lenses in (lll)-orientation, and wherein the lenses of each subgroup are arranged rotated relative to each other about their lens axes.
摘要:
Objective (1, 601), in particular a projection objective for a microlithography projection apparatus, with first birefringent lenses (L108, L109, L129, L130) and with second birefringent lenses (L101-L107, L110-L128). The first lenses (L108, L109, L129, L130) are distinguished from the second lenses (L101-L107, L110-L128) by the lens material used or by the material orientation. After passing through the first lenses (L108, L109, L129, L130) and the second lenses (L101-L107, L110-L128), outer aperture ray (5, 7) and a principal ray (9) are subject to optical path differences for two mutually orthogonal states of polarization. The difference between these optical path differences is smaller than 25% of the working wavelength. In at least one first lens (L129, L130), the aperture angle of the outer aperture ray (5, 7) is at least 70% of the largest aperture angle occurring for said aperture ray in all of the first lenses (L108, L109, L129, L130) and second lenses (L101-L107, L110-L128). This arrangement has the result that the first lenses (L108, L109, L129, L130) have a combined material volume of no more than 20% of the combined total material volume of the first lenses (L108, L109, L129, L130) and second lenses (L101-L07, L110-L128).
摘要:
The invention relates to a lens (1), in particular a projection lens for a micro-lithography projection exposure system, composed of at least one first group (3) of lenses (7) or lens sections consisting of a first crystal material and of at least one second group (5) of lenses (11) or lens sections consisting of a second crystal material. An outer aperture beam (15) is subjected to a first optical path difference for two mutually perpendicular linear polarisation states in the first group (3) and a second optical path difference in the second group (5). The two optical path differences approximately compensate one another, as a result of the different crystal materials. This can be achieved in particular with calcium fluoride as the first crystal material and barium fluoride as the second crystal material.
摘要:
A mask (105) for EUV lithography includes a substrate (107), a multi-layer coating (108) applied to the substrate (107) and a mask structure (109) which is applied to the multi-layer coating (108) and which has an absorber material, the mask structure (109) having a maximum thickness of less than 100 nm, preferably not exceeding a maximum thickness of 30 nm, particularly preferably 20 nm, in particular 10 nm. Also disclosed is an EUV lithography system having such a mask (105) and a method for optimizing the imaging of such a mask (105).