RF MEMS ISOLATION, SERIES AND SHUNT DVC, AND SMALL MEMS
    6.
    发明公开
    RF MEMS ISOLATION, SERIES AND SHUNT DVC, AND SMALL MEMS 审中-公开
    RF-MEMS-ISOLIERUNG,REIHEN- UND NEBENANSCHLUSS-DVC UND KLEINES MEMS

    公开(公告)号:EP2751818A2

    公开(公告)日:2014-07-09

    申请号:EP12772159.5

    申请日:2012-08-31

    Abstract: The present invention generally relates to an architecture for isolating an RF MEMS device from a substrate and driving circuit, series and shunt DVC die architectures, and smaller MEMS arrays for high frequency communications. The semiconductor device has one or more cells with a plurality of MEMS devices therein. The MEMS device operates by applying an electrical bias to either a pull-up electrode or a pull-down electrode to move a switching element of the MEMS device between a first position spaced a first distance from an RF electrode and a second position spaced a second distance different than the first distance from the RF electrode. The pull-up and/or pull-off electrode may be coupled to a resistor to isolate the MEMS device from the substrate.

    Abstract translation: 本发明一般涉及用于将RF MEMS器件与衬底以及驱动电路,串联和分流DVC管芯结构以及用于高频通信的较小MEMS阵列隔离的架构。 半导体器件具有一个或多个具有多个MEMS器件的单元。 MEMS器件通过将电偏压施加到上拉电极或下拉电极来操作,以将MEMS器件的开关元件移动在与RF电极间隔开第一距离的第一位置和间隔第二位置的第二位置 距离与RF电极的第一距离不同。 上拉和/或下拉电极可以耦合到电阻器以将MEMS器件与衬底隔离。

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