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公开(公告)号：EP2740151A1
公开(公告)日：2014-06-11
申请号：EP11870454.3
申请日：2011-08-03
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： H01L45/1608 , H01L27/101 , H01L45/08 , H01L45/1266 , H01L45/145
摘要： A nitride-based memristor memristor includes: a first electrode comprising a first nitride material; a second electrode comprising a second nitride material; and active region positioned between the first electrode and the second electrode. The active region includes an electrically semiconducting or nominally insulating and weak ionic switching nitride phase. A method for fabricating the nitride-based memristor is also provided.
摘要翻译： 一种基于氮化物的忆阻器忆阻器包括：包括第一氮化物材料的第一电极; 包含第二氮化物材料的第二电极; 以及位于第一电极和第二电极之间的有源区。 有源区包括半导体或名义上绝缘的弱离子开关氮化物相。 还提供了一种用于制造基于氮化物的忆阻器的方法。
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公开(公告)号：EP2842163A1
公开(公告)日：2015-03-04
申请号：EP12875510.5
申请日：2012-04-25
IPC分类号： H01L27/105 , H01L21/8239
CPC分类号： H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/1608
摘要： A nonlinear memristor includes a bottom electrode, a top electrode, and an insulator layer between the bottom electrode and the top electrode. The insulator layer comprises a metal oxide. The nonlinear memristor further includes a switching channel within the insulator layer, extending from the bottom electrode toward the top electrode, and a nano-cap layer of a metal-insulator-transition material between the switching channel and the top electrode. The top electrode comprises the same metal as the metal in the metal-insulator-transition material.
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公开(公告)号：EP2839295B1
公开(公告)日：2017-04-19
申请号：EP12874752.4
申请日：2012-04-20
发明人： BRATKOVSKI, Alexandre M. , LI, Zhiyong , WU, Wei , HU, Min , WILLIAMS, R. Stanley , KIM, Ansoon
CPC分类号： G01N21/658 , B01L3/5088 , B01L2300/0627 , B01L2300/0819 , B01L2300/161 , G01N21/648 , G01N35/00009 , G01N2035/00019
摘要： Examples of integrated sensors are disclosed herein. An example of an integrated sensor includes a substrate and a sensing member formed on a surface of the substrate. The sensing member includes collapsible signal amplifying structures and an area surrounding the collapsible signal amplifying structures that enables self-positioning of droplets exposed thereto toward the collapsible signal amplifying structures.
摘要翻译： 集成传感器的示例在此公开。 集成传感器的示例包括形成在基板的表面上的基板和感测构件。 感测构件包括可折叠信号放大结构和围绕可折叠信号放大结构的区域，其使得能够将暴露于其的液滴自身定位到可折叠信号放大结构。
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公开(公告)号：EP2443657A1
公开(公告)日：2012-04-25
申请号：EP09849071.7
申请日：2009-09-04
发明人： WILLIAMS, R. Stanley , YANG, Jianhua , PICKETT, Matthew , RIBEIRO, Gilberto , STRACHAN, John Paul
IPC分类号： H01L29/40
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor (100, 100', 100") based on mixed-metal-valence compounds comprises: a first electrode (115); a second electrode (120); a layer (105) of a mixed-metal-valence phase in physical contact with at least one layer (110, 110a, 110b) of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field (125). One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer (110a) of a fully oxidized phase and the other is in electrical contact with the layer (or other layer (110b)) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode (100') and an ON-switched diode (100") are also provided. A method of operating the memristor is further provided.
摘要翻译： 一种基于混合金属价化合物的忆阻器（100,100'，100“），包括：第一电极（115）;第二电极（120）;混合金属化合价相的层（105） 与完全氧化相的至少一个层（110,110a，110b）接触，混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，响应漂移进入和完全氧化相 施加电场（125），第一和第二电极中的一个电极与混合金属价态层或完全氧化相的层（110a）电接触，另一个电接触 与完全氧化相的层（或其它层（110b））一起形成忆阻器。忆阻器通过以任意顺序形成混合金属价相层和完全氧化相层，一个在另一个上。 还提供可逆二极管（100'）和开关二极管（100“）。 还提供了一种操作忆阻器的方法。
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公开(公告)号：EP2311094A1
公开(公告)日：2011-04-20
申请号：EP08794914.5
申请日：2008-07-31
IPC分类号： H01L29/41
CPC分类号： H01L29/861 , H01L27/101 , H01L27/1021 , H01L29/8615 , H01L29/8616 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： Embodiments of the present invention are directed to reconfigurable two-terminal electronic switch devices (100) comprising a compound (102) sandwiched between two electrodes (104,106). These devices are configured so that the two electrode/compound interface regions can be either rectifying or conductive, depending on the concentration of dopants at the respective interface, which provides four different device operating characteristics. By forcing charged dopants into or out of the interface regions with an applied electric field pulse, a circuit element can be switched from one type of stable operation to another in at least three different ways. A family of devices built to express these properties display behaviors that provide new opportunities for nanoscale electronic devices.
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公开(公告)号：EP3210208A1
公开(公告)日：2017-08-30
申请号：EP14904451.3
申请日：2014-10-23
发明人： GE, Ning , YANG, Jianhua , LI, Zhiyong , WILLIAMS, R. Stanley
IPC分类号： G11C13/00
CPC分类号： G11C13/004 , G11C7/24 , G11C8/12 , G11C11/5678 , G11C11/5685 , G11C13/0023
摘要： A device for generating a representative logic indicator of grouped memristors is described. The device includes a memristor array. The memristor array includes a number of first memristors having a first set of logic indicators and a number of second memristors having a second set of logic indicators. The second set of logic indicators is different than the first set of logic indicators. Each first memristor is grouped with a corresponding second memristor during a memory read operation to generate a representative logic indicator.
摘要翻译： 描述了用于生成分组的忆阻器的代表性逻辑指示符的设备。 该器件包括一个忆阻器阵列。 忆阻器阵列包括具有第一组逻辑指示器的多个第一忆阻器和具有第二组逻辑指示器的多个第二忆阻器。 第二组逻辑指标与第一组逻辑指标不同。 在存储器读取操作期间，每个第一忆阻器与对应的第二忆阻器分组以生成代表性逻辑指示符。
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7.发明公开
公开(公告)号：EP2842165A1
公开(公告)日：2015-03-04
申请号：EP12875550.1
申请日：2012-04-26
IPC分类号： H01L29/86
CPC分类号： H01L29/24 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L21/02425 , H01L21/02565 , H01L21/02631 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L29/0676 , H01L29/247 , H01L29/47 , H01L29/8605 , H01L29/861 , H01L29/8616 , H01L29/872 , H01L29/92 , H01L45/00 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
摘要翻译： 在一个示例中，可定制的非线性电气装置包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的薄膜金属氧化物层，以在金属氧化物之间形成第一整流界面 层和第一导电层以及金属氧化物层和第二导电层之间的第二整流界面。 金属氧化物层包括共存金属和金属氧化物的导电混合物。 还提供了形成非线性电气装置的方法。
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公开(公告)号：EP2724372A1
公开(公告)日：2014-04-30
申请号：EP11868115.4
申请日：2011-06-24
发明人： MIAO, Feng , YANG, Jianhua , STRACHAN, John Paul , YI, Wei , RIBEIRO, Gilberto Medeiros , WILLIAMS, R. Stanley
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
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公开(公告)号：EP2311094B1
公开(公告)日：2014-01-01
申请号：EP08794914.5
申请日：2008-07-31
IPC分类号： H01L29/872 , H01L29/861
CPC分类号： H01L29/861 , H01L27/101 , H01L27/1021 , H01L29/8615 , H01L29/8616 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
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10.发明公开
公开(公告)号：EP2564243A1
公开(公告)日：2013-03-06
申请号：EP10850892.0
申请日：2010-04-30
发明人： WILLIAMS, R. Stanley
摘要： An aerostatic platform (201) for monitoring an earth-based sensor network (210). The aerostatic platform (201) includes an aerostat (231), at least one antenna (241) coupled with the aerostat (231), and a plurality (251) of restraints (251-1, 251-2, 251-3). The antenna (241) is configurable to receive a signal transmitted from at least one sensor (210-1) in the earth-based sensor network (210). The plurality (251) of restraints (251-1, 251-2, 251-3) is configurable for fixing the antenna (241) in a fixed aerial location (115-1) above the earth-based sensor network (210), and for maintaining the antenna (241) in a sufficiently stationary position relative to the sensor (210-1) to triangulate a location (110-1) of the sensor (210-1) from a locator signal received by the antenna (241). A sensor-network-monitoring system (401) is also provided, along with a method for deploying the sensor-network monitoring system (401).
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