摘要:
The invention relates to a contact connector which forms an electrical contact between the wiring and the connecting wires on the semiconductor component. According to the invention, the contact connector has the advantage that, even when the second electrical conducting element is damaged during the bonding or the application of measuring needles, this does not lead to damage to the first electrical conducting element, due to the fact that the vertical projection of the bonding surface on the first insulation, in which the first electrical conducting element is embedded, is arranged next to the first electrical conducting element and thus the first electrical conducting element is not cut as the pressure of the measuring needles or the pressure occurring during the bonding process is taken by the first insulation.
摘要:
The invention relates to a connection arrangement comprising an outer conductive structure (44), which is at least partially or completely placed inside a recess (37) of an electrically non-conductive insulating layer (34, 36). At the bottom of the recess (37), an inner conductive structure (22) is placed on one side of the insulating layer (34, 36) and, in a contacting area, it borders on the outer conductive structure (44). A contact surface is placed on the outer conductive structure (44) on the other side of the recess (37). The contacting area and the contact surface do not overlap one another or only in part. The bottom of the recess (37) is, when viewed in the normal direction, arranged in such at manner that it overlaps at least half of the contact surface or the entirety thereof so that a step in the insulating layer (34, 36) is situated on the edge of the recess (37) outside of a main current path extending between the contact surface and the inner conductive structure (22).
摘要:
The invention relates inter alia to an integrated circuit (10) comprising a capacitor (64) and a precision resistor (57) which are manufactured simultaneously. The dielectric (68) of the capacitor (64) is preferably produced by means of anodic oxidation. A base layer (58,71) is used in order to protect the material (66) which is to be oxidated. Said layer also protects the surrounding areas from anodic oxidation. Very high value dielectrics (68) and very high value capacitors (64) and integrated circuits (10) can thus be produced.
摘要:
The invention relates inter alia to a method for galvanising consisting, for example in structuring a copper layer (24) by means of a resist (26). A barrier layer (22) placed under said copper layer (24) is used for supplying a galvanisation current to the areas without the copper layer. The inventive method makes it possible to produce high quality soldering bumps.
摘要:
The invention relates to a method for producing a multifunctional dielectric layer on a substrate, especially on an exposed metallic strip conductor system on a substrate. The aim of the invention is to provide a method for producing a multifunctional passivation layer for copper strip conductors that is easy to carry out and that provides improved electromigration, stress migration and improved adhesion. According to the invention, this aim is achieved by depositing an additional metal layer (5) across the surface of the exposed metal strip conductors (3). Said metal layer is then at least partially converted to a nonconducting metal oxide, the dielectric layer.
摘要:
The invention relates to a method for producing a multifunctional dielectric layer on a substrate, especially on an exposed metallic strip conductor system on a substrate. The aim of the invention is to provide a method for producing a multifunctional passivation layer for copper strip conductors that is easy to carry out and that provides improved electromigration, stress migration and improved adhesion. According to the invention, this aim is achieved by depositing an additional metal layer (5) across the surface of the exposed metal strip conductors (3). Said metal layer is then at least partially converted to a nonconducting metal oxide, the dielectric layer.