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1.发明公开Semiconductor device and manufacturing method of the same, including a dicing step 审中-公开半导体装置及其制造方法，包括切割
公开(公告)号：EP1575086A3
公开(公告)日：2006-06-14
申请号：EP05004918.8
申请日：2005-03-07
发明人： Noma, Takashi , Seki, Yoshinori , Wakui, Motoaki
IPC分类号： H01L21/78 , H01L23/544
CPC分类号： H01L21/78 , H01L21/561 , H01L23/3114 , H01L23/544 , H01L24/10 , H01L24/13 , H01L24/97 , H01L2223/54453 , H01L2223/5448 , H01L2224/05001 , H01L2224/05022 , H01L2224/051 , H01L2224/05548 , H01L2224/05624 , H01L2224/05644 , H01L2224/05655 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00 , H01L2924/00014
摘要： The invention is directed to an improvement of cutting accuracy in a cutting process when a semiconductor device attached with a supporting member is manufactured. The invention provides a manufacturing method of a semiconductor device where a semiconductor wafer (10) attached with a glass substrate is cut with moving a rotation blade along a dicing region and has following features. A pair of alignment marks (51a,b) is formed facing each other over the dicing region on the semiconductor wafer (10). Then, when the rotation blade is to be aligned on a center of the dicing region, that is, on a centerline (61) thereof in the cutting process, positions of the alignment marks (51a,b) are detected by a recognition camera (80), the centerline (61) is calculated based on the detection result, and the rotation blade is aligned on the centerline (61) to perform cutting.
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公开(公告)号：EP1429377A3
公开(公告)日：2005-03-23
申请号：EP03028639.7
申请日：2003-12-15
发明人： Noma, Takashi
IPC分类号： H01L21/60
CPC分类号： H01L24/10 , H01L21/4846 , H01L23/3114 , H01L24/13 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05569 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01077 , H01L2924/01082 , H01L2924/014 , H01L2924/15788 , H01L2924/3511 , H01L2924/00 , H01L2224/05624 , H01L2924/00014 , H01L2224/05124
摘要： The invention is directed to improving of a yield and reliability of a BGA type semiconductor device having ball-shaped conductive terminals. A semiconductor wafer (1a) having warped portions is supported by a plurality of pins (21), being spaced from a heated stage (20). The semiconductor wafer (1a) is heated as a whole by uniformly irradiating thermal radiation thereto by using IR heaters (45) disposed on an upper part of the semiconductor wafer (1a) and side heaters (47) facing to lateral surfaces of the semiconductor wafer (1a). This enables uniform reflowing of the conductive terminals provided on the semiconductor wafer (1a), and makes each of the conductive terminals form a uniform shape.
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3.发明公开Semiconductor device and manufacturing method thereof 有权Halbleitervorrichtung und Herstellungsverfahrendafür
公开(公告)号：EP1471571A1
公开(公告)日：2004-10-27
申请号：EP04009853.5
申请日：2004-04-26
发明人： Noma, Takashi , Suzuki, Akira , Shinogi, Hiroyuki
IPC分类号： H01L21/768 , H01L25/065
CPC分类号： H01L24/02 , H01L21/76898 , H01L23/3114 , H01L25/0657 , H01L27/14806 , H01L2224/0401 , H01L2224/16 , H01L2225/06513 , H01L2225/06517 , H01L2225/06527 , H01L2225/06565 , H01L2924/01005 , H01L2924/01014 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/12042 , H01L2924/00
摘要： A stacked MCM is manufactured at reduced cost without using expensive apparatus. A first wiring (3A) and a second wiring (3B) are formed on a surface of a semiconductor chip (1) of a first semiconductor (100a) through an insulation film (2). A glass substrate (4) having an opening (12) to expose the second wiring (3B) is bonded to the surface of the semiconductor chip (1) on which the first wiring (3A) and the second wiring (3B) are formed. A third wiring (9) is disposed on a back surface and a side surface of the semiconductor chip (1) through an insulation film (7) and connected to the first wiring (3A). And a conductive terminal (11B) of another semiconductor device (100b) is connected to the second wiring (3B) through the opening (12).
摘要翻译： 半导体器件包括在形成在半导体芯片（1）的前表面上的绝缘膜（2）上的第一（3A）和第二（3B）布线，具有开口（12）的支撑体（4）和 在芯片的背面上的附加绝缘膜（7）上的第三布线（9）。 开口露出至少部分第二布线。 第三布线沿着芯片的侧表面延伸并连接到第一布线。 包括用于制造半导体器件的独立权利要求。
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公开(公告)号：EP1429377A2
公开(公告)日：2004-06-16
申请号：EP03028639.7
申请日：2003-12-15
发明人： Noma, Takashi
IPC分类号： H01L21/60
CPC分类号： H01L24/10 , H01L21/4846 , H01L23/3114 , H01L24/13 , H01L2224/05001 , H01L2224/05008 , H01L2224/05548 , H01L2224/05569 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01077 , H01L2924/01082 , H01L2924/014 , H01L2924/15788 , H01L2924/3511 , H01L2924/00 , H01L2224/05624 , H01L2924/00014 , H01L2224/05124
摘要： The invention is directed to improving of a yield and reliability of a BGA type semiconductor device having ball-shaped conductive terminals. A semiconductor wafer (1a) having warped portions is supported by a plurality of pins (21), being spaced from a heated stage (20). The semiconductor wafer (1a) is heated as a whole by uniformly irradiating thermal radiation thereto by using IR heaters (45) disposed on an upper part of the semiconductor wafer (1a) and side heaters (47) facing to lateral surfaces of the semiconductor wafer (1a). This enables uniform reflowing of the conductive terminals provided on the semiconductor wafer (1a), and makes each of the conductive terminals form a uniform shape.
摘要翻译： 本发明旨在提高具有球形导电端子的BGA型半导体器件的成品率和可靠性。 具有翘曲部分的半导体晶片（1a）由与加热台（20）间隔开的多个销（21）支撑。 通过使用设置在半导体晶片（1a）的上部的红外线加热器（45）和面对半导体晶片的侧面的侧面加热器（47），将半导体晶片（1a）整体加热，从而均匀地照射热辐射 （1a）中。 这使得能够均匀地回流设置在半导体晶片（1a）上的导电端子，并且使每个导电端子形成均匀的形状。
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公开(公告)号：EP1376678A3
公开(公告)日：2004-02-04
申请号：EP03013839.0
申请日：2003-06-18
IPC分类号： H01L21/60
CPC分类号： H01L21/6836 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/02 , H01L24/11 , H01L24/12 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2224/0231 , H01L2224/02371 , H01L2224/0401 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/13025 , H01L2225/06513 , H01L2225/06541 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/09701 , H01L2924/15788 , H01L2924/00
摘要： A manufacturing method of a semiconductor device of this invention includes forming metal pads (2a, b) on a Si substrate (1) through a first oxide film (3), bonding the Si substrate (1) and a holding substrate (8) which bolsters the Si substrate (1) through a bonding film (7), forming an opening by etching the Si substrate (1) followed by forming a second oxide film (10) on a back surface of the Si substrate (1) and in the opening, forming a wiring (12) connected to the metal pads (2a, b) after etching the second oxide film (10), forming a conductive terminal (14) on the wiring (12), dicing from the back surface of the Si substrate to the bonding film (7) and separating the Si substrate (1) and the holding substrate (8).
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公开(公告)号：EP1505643B1
公开(公告)日：2012-11-14
申请号：EP04018715.5
申请日：2004-08-06
发明人： Noma, Takashi , Kitagawa, Katsuhiko , Otsuka, Hisao , Suzuki, Akira , Seki, Yoshinori , Takao,Yukihiro , Yamaguchi, Keiichi , Wakui, Motoaki , Iida, Masanori
CPC分类号： H01L24/13 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L23/3114 , H01L24/11 , H01L24/12 , H01L2221/68327 , H01L2221/68372 , H01L2224/02313 , H01L2224/0401 , H01L2224/0558 , H01L2224/05644 , H01L2224/131 , H01L2224/13144 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/13099
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公开(公告)号：EP1798769A3
公开(公告)日：2009-07-08
申请号：EP06026088.2
申请日：2006-12-15
发明人： Okada, Kazuo , Kitagawa, Katsuhiko , Noma, Takashi , Otsuka, Shigeki , Yamada, Hiroshi , Ishibe, Shinzo , Morita, Yuichi , Okubo, Noboru , Shinogi, Hiroyuki , Okigawa, Mitsuru
IPC分类号： H01L27/146 , H01L31/0203 , H01L31/0232
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14625 , H01L31/0203 , H01L31/02327 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring (9) formed on a back surface of a semiconductor substrate (2) on an output image. A reflection layer (8) is formed between a light receiving element (1) and a wiring layer (9), that reflects an infrared ray toward a light receiving element (1) the without transmitting it to the wiring layer (9), the infrared ray entering from a light transparent substrate (6) toward the wiring layer (9) through a semiconductor substrate (2). The reflection layer (8) is formed at least in a region under the light receiving element (1) uniformly or only under the light receiving element (1). Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底（2）的背面上的布线（9）的图案的反射问题。 在光接收元件（1）和布线层（9）之间形成反射层（8），其将红外线反射到光接收元件（1）而不将其传输到布线层（9）， 通过半导体基板（2）从透光性基板（6）向布线层（9）进入的红外线。 反射层（8）至少在光接收元件（1）下面的区域内均匀地或仅在光接收元件（1）的下方形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。
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8.发明公开
公开(公告)号：EP1801849A3
公开(公告)日：2008-07-02
申请号：EP06026547.7
申请日：2006-12-21
发明人： Noma, Takashi
IPC分类号： H01L31/0232
CPC分类号： H01L27/14618 , H01L23/3164 , H01L24/05 , H01L24/11 , H01L24/13 , H01L27/14687 , H01L2224/0401 , H01L2224/04042 , H01L2224/05124 , H01L2224/05147 , H01L2224/05571 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/06154 , H01L2224/10125 , H01L2224/1131 , H01L2224/1132 , H01L2224/11462 , H01L2224/1148 , H01L2224/11849 , H01L2224/13022 , H01L2224/131 , H01L2224/13144 , H01L2224/14135 , H01L2224/14154 , H01L2224/16225 , H01L2224/16227 , H01L2224/48091 , H01L2224/48227 , H01L2224/81141 , H01L2924/00013 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01072 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/15788 , H04N5/2257 , H01L2924/00014 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2224/05552 , H01L2924/00
摘要： The invention provides a package type semiconductor device and a method of manufacturing the same where reliability and yield are enhanced without making a manufacturing process complex. A resin layer (6) and a supporting body (7) are formed on a front surface of a semiconductor substrate (2) formed with a pad electrode (4). Then, the resin layer (6) and the supporting body (7) are removed by etching so as to expose the pad electrode (4). By this etching, the supporting body (7) in two conductive terminal formation regions facing each other over a dicing line (x) and the supporting body in a region connecting with these regions therebetween are simultaneously removed to form an opening (10). Then, a metal layer is formed on the pad electrode (4) exposed in the opening, and a conductive terminal is further formed thereon. Lastly, dicing is performed along the dicing line to separate the semiconductor substrate in individual semiconductor dies.
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公开(公告)号：EP1798769A2
公开(公告)日：2007-06-20
申请号：EP06026088.2
申请日：2006-12-15
发明人： Okada, Kazuo , Kitagawa, Katsuhiko , Noma, Takashi , Otsuka, Shigeki , Yamada, Hiroshi , Ishibe, Shinzo , Morita, Yuichi , Okubo, Noboru , Shinogi, Hiroyuki , Okigawa, Mitsuru
IPC分类号： H01L27/146 , H01L31/0203 , H01L31/0232
CPC分类号： H01L27/14618 , H01L23/481 , H01L27/14625 , H01L31/0203 , H01L31/02327 , H01L2224/02371 , H01L2224/02372 , H01L2224/0401 , H01L2224/05 , H01L2224/05548 , H01L2224/13022 , H01L2224/13024 , H01L2224/131 , H01L2924/014
摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring (9) formed on a back surface of a semiconductor substrate (2) on an output image. A reflection layer (8) is formed between a light receiving element (1) and a wiring layer (9), that reflects an infrared ray toward a light receiving element (1) the without transmitting it to the wiring layer (9), the infrared ray entering from a light transparent substrate (6) toward the wiring layer (9) through a semiconductor substrate (2). The reflection layer (8) is formed at least in a region under the light receiving element (1) uniformly or only under the light receiving element (1). Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.
摘要翻译： 本发明提供了一种半导体器件，其解决了在输出图像上形成在半导体衬底（2）的背表面上的布线（9）的图案的反射问题。 在光接收元件（1）和布线层（9）之间形成反射层（8），该反射层（8）将红外线朝向光接收元件（1）反射而不将其传输到布线层（9）， （6）通过半导体衬底（2）向布线层（9）入射的红外线。 至少在光接收元件（1）下方的区域中均匀地或仅在光接收元件（1）下方形成反射层（8）。 或者，可以形成具有吸收进入的红外线以防止其透射的功能的抗反射层来代替反射层。
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10.发明公开Semiconductor device and manufacturing method of the same 审中-公开Halbleiterbauteil和dessen Herstellung
公开(公告)号：EP1737036A2
公开(公告)日：2006-12-27
申请号：EP06012324.7
申请日：2006-06-14
发明人： Morita, Yuichi , Ishibe, Shinzo , Noma, Takashi , Otsuka, Hisao , Takao, Yukihiro , Kanamori, Hiroshi
IPC分类号： H01L23/485 , H01L21/60
CPC分类号： H01L24/13 , H01L23/3192 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05568 , H01L2224/05644 , H01L2224/1191 , H01L2224/13022 , H01L2224/13099 , H01L2224/131 , H01L2224/13144 , H01L2924/0001 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
摘要： The invention provides a CSP type semiconductor device with high reliability.
The semiconductor device includes a pad electrode (4) formed on a semiconductor substrate (1) with insulation films (2, 3) interposed therebetween, a plating layer (7) formed on the pad electrode (4), a conductive terminal (9) formed on the plating layer and electrically connected with the pad electrode (4), and a first passivation film (5) covering the insulation films (2, 3) and a side end portion of the pad electrode (4), in which an exposed portion of the pad electrode (4) that causes corrosion is covered by forming a second passivation film (10) so as to cover the first passivation film (5), the plating layer (7), and a portion of a sidewall of the conductive terminal (9).摘要翻译： 本发明提供了一种具有高可靠性的CSP型半导体器件。 半导体器件包括形成在半导体衬底（1）上的绝缘膜（2,3）的焊盘电极（4），形成在焊盘电极（4）上的镀层（7），导电端子（9） 形成在所述镀层上并与所述焊盘电极（4）电连接;以及覆盖所述绝缘膜（2,3）的第一钝化膜（5）和所述焊盘电极（4）的侧端部， 通过形成第二钝化膜（10）覆盖引起腐蚀的焊盘电极（4）的一部分，以覆盖第一钝化膜（5），镀层（7）和导电的侧壁的一部分 终端（9）。
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