公开(公告)号：EP2296175A4

公开(公告)日：2012-02-01

申请号：EP09746360

申请日：2009-05-13

申请人： SUMITOMO BAKELITE CO

发明人： NIKAIDO HIROKI ,  SUGINO MITSUO

IPC分类号： H01L21/56 ,  H01L21/60

CPC分类号： H01L23/49816 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/3114 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L24/94 ,  H01L2221/68336 ,  H01L2224/02319 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/27416 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/29388 ,  H01L2224/73203 ,  H01L2224/81193 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2224/8191 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/1579 ,  H05K3/0052 ,  H05K2201/10378 ,  H05K2201/10674 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/05341 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/05032 ,  H01L2924/05042 ,  H01L2924/0503 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

公开(公告)号：EP2133913A4

公开(公告)日：2010-05-05

申请号：EP08704008

申请日：2008-01-28

申请人： SUMITOMO BAKELITE CO ,  TOYOTA TSUSHO CORP ,  TOYOTA MOTOR CO LTD

发明人： MURATA TAKASHI ,  NAKAMURA YOSHIYUKI ,  TAKAHASHI IZUMI ,  SOH HATSUHIRO ,  SHIMIZU KAZUMOTO ,  NII YOSHIHIDE ,  ITO SHINICHIRO ,  KAWAGUCHI HITOSHI ,  SUGINO MITSUO

IPC分类号： H01L23/36 ,  C09K5/08 ,  H01L23/34 ,  H01L23/373 ,  H05K7/20

CPC分类号： F28F3/02 ,  B23P15/26 ,  C09K5/14 ,  F28F2013/006 ,  H01L23/34 ,  H01L23/3733 ,  H01L23/3737 ,  H01L23/433 ,  H01L2924/0002 ,  Y10T29/49352 ,  H01L2924/00

公开(公告)号：EP2144282A4

公开(公告)日：2010-06-09

申请号：EP08752033

申请日：2008-04-24

申请人： SUMITOMO BAKELITE CO

发明人： MAEJIMA KENZOU ,  KATSURAYAMA SATORU ,  SUGINO MITSUO

IPC分类号： H01L21/60 ,  H01L21/02 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18

CPC分类号： H01L25/0657 ,  H01L23/481 ,  H01L24/11 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/05573 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/274 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83855 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/01083 ,  H01L2224/13111 ,  H01L2224/13109 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/05599

摘要： In a method for bonding semiconductor wafers of the present invention, a bonding layer containing a flux-active curing agent and a thermosetting resin is interposed between a first semiconductor wafer and a second semiconductor wafer, thereby producing a semiconductor wafer stacked body in which the first and second semiconductor wafers are stacked together, and then the semiconductor wafer stacked body is compressed in a thickness direction thereof while heating it so that the first and second semiconductor wafers are fixed together by melting and solidifying solder bumps while curing the thermosetting resin, thereby producing a semiconductor wafer bonded body in which first connector portions and second connector portions are electrically connected together through solidified products obtained by melting and solidifying the solder bumps.

公开(公告)号：EP2169723A4

公开(公告)日：2013-03-13

申请号：EP08710414

申请日：2008-02-19

申请人： SUMITOMO BAKELITE CO

发明人： TAKAHASHI TOYOSEI ,  TAKAYAMA RIE ,  SUGINO MITSUO ,  KAWATA MASAKAZU

IPC分类号： H01L31/0203 ,  H01L23/02 ,  H01L23/10 ,  H01L27/14 ,  H01L27/146 ,  H01L31/02

CPC分类号： H01L27/14618 ,  H01L27/14683 ,  H01L31/0203 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01077 ,  H01L2924/10253 ,  H01L2924/16195 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light receiving device 1 includes a support substrate 12 provided thereon with a photodetector 11 including a photodetecting portion 111 and a base substrate 112 on which the photodetecting portion 111 is placed; and a transparent substrate 13 disposed so as to oppose the face of the support substrate 12 on which the photodetector 11 is provided. Between the support substrate 12 and the transparent substrate 13, a frame portion 14 is provided so as to surround the photodetector 11. The frame portion 14 is a photo-curing adhesive, and directly adhered to the transparent substrate 13 and the support substrate 12. Such structure provides a light receiving device capable of exhibiting the desired performance, and a method of manufacturing such light receiving device can also be provided.

公开(公告)号：EP1840953A4

公开(公告)日：2011-09-21

申请号：EP06728827

申请日：2006-03-09

申请人： SUMITOMO BAKELITE CO

发明人： SAKAMOTO YUSHI ,  HOSOMI TAKESHI ,  SUGINO MITSUO

IPC分类号： H01L21/60 ,  H01L23/12 ,  H01L23/29 ,  H01L23/31

CPC分类号： H01L23/5329 ,  H01L21/563 ,  H01L23/14 ,  H01L23/5222 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/05085 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00

摘要： A semiconductor device 100 has a BGA substrate 110, a semiconductor chip 101, a bump 106 and an underfill 108 filling the periphery of the bump. An interlayer dielectric 104 in the semiconductor chip 101 contains a low dielectric constant film. The bump 106 is comprised of a lead-free solder. The underfill 108 is comprised of a resin material having an elastic modulus of 150 MPa to 800 MPa both inclusive, and a linear expansion coefficient of the BGA substrate 110 in an in-plane direction of the substrate is less than 14 ppm/°C.

摘要翻译： 半导体器件100具有BGA基板110，半导体芯片101，凸块106和填充凸块外围的底部填充物108。 半导体芯片101中的层间电介质104包含低介电常数膜。 凸块106由无铅焊料构成。 底部填料108由弹性模量为150MPa以上800MPa以下的树脂材料构成，BGA基板110的面内方向的线膨胀系数小于14ppm /℃。