公开(公告)号：EP3054037A1

公开(公告)日：2016-08-10

申请号：EP14849461.0

申请日：2014-09-18

申请人： Tamura Corporation ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： GOTO, Ken ,  SASAKI, Kohei ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： C30B29/16 ,  C23C16/40 ,  C23C16/448 ,  C30B25/14 ,  H01L21/365

CPC分类号： C30B25/165 ,  C23C16/40 ,  C23C16/4488 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/24

摘要： Provided are: a method for efficiently growing a high-quality, large diameter β-Ga 2 O 3 -based single crystal film; and a crystalline layered structure having a β-Ga 2 O 3 -based single crystal film grown using this growing method. As one embodiment, the present invention provides a method for growing a β-Ga 2 O 3 -based single crystal film by using the HVPE method, and including a step for exposing a Ga 2 O 3 -based substrate (10) to a gallium chloride gas and an oxygen-containing gas, and growing a β-Ga 2 O 3 -based single crystal film (12) on the principal surface (11) of the Ga 2 O 3 -based substrate (10) at a growing temperature of 900° C or higher.

摘要翻译： 本发明提供：用于有效地生长高质量的方法，大直径²-的Ga 2 O 3系单晶膜; 和具有使用该生长方法生长的²-的Ga 2 O 3系单晶膜的结晶层状结构。 作为一个实施例，本发明提供了一种方法，用于通过利用HVPE法生长²-的Ga 2 O 3系单晶的电影，并且包括用于曝光的Ga 2 O 3系基材（10），以镓的工序 氯化物气体和基底物在生长温度气体，和Ga的2 O 3（10）的主表面（11）上生长²-的Ga 2 O 3系单晶膜（12）的含氧 900℃或更高。

公开(公告)号：EP3933935A1

公开(公告)日：2022-01-05

申请号：EP21187580.2

申请日：2016-03-09

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： SASAKI, Kohei ,  GOTO, Ken ,  HIGASHIWAKI, Masataka ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L29/24 ,  C23C16/40 ,  C30B29/16 ,  H01L21/02 ,  H01L29/47

摘要： [Problem] To provide a Ga 2 O 3 -based high withstand voltage Schottky barrier diode having excellent withstand voltage characteristics. [Solution] According to one embodiment of the present invention, provided is a high withstand voltage Schottky barrier diode 1 having: a first layer 10, which is formed of a first Ga 2 O 3 -based single crystal containing a first Group IV element, and Cl at a concentration equal to or lower than 5×10 16 cm -3 , and which has an effective donor concentration not lower than 1×10 13 but not higher than 6.0×10 17 cm -3 ; a second layer 12, which is formed of a second Ga 2 O 3 -based single crystal containing a second Group IV element, and which has an effective donor concentration that is higher than that of the first layer 10, said second layer being laminated on the first layer 10; an anode electrode 14 formed on the first layer 10; and a cathode electrode 15 formed on the second layer 12.

公开(公告)号：EP3141635A1

公开(公告)日：2017-03-15

申请号：EP15789328.0

申请日：2015-05-11

申请人： Tamura Corporation ,  National University Corporation Tokyo University of Agriculture and Technology

发明人： GOTO, Ken ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： C30B29/16 ,  C23C16/40 ,  C30B25/20 ,  H01L21/205 ,  H01L21/365

CPC分类号： C30B25/20 ,  C23C16/44 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02428 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/205 ,  H01L29/045 ,  H01L29/24

摘要： Provided are: a semiconductor substrate comprising a β-Ga 2 O 3 single crystal, on which an epitaxial layer comprising a β-Ga 2 O 3 single crystal can be made to grow at a high growth rate using the hydride vapor phase epitaxy (HVPE) method; an epitaxial wafer comprising such semiconductor substrate and epitaxial layer; and a method for manufacturing such epitaxial wafer. As one embodiment of the present invention, provided is a semiconductor substrate (11), used as a base substrate for epitaxial crystal growth by the HVPE method, wherein the semiconductor substrate comprises a β-Ga 2 O 3 -based single crystal and a plane parallel to the [010] axis of the β-Ga 2 O 3 single crystal is used as the principal surface.

摘要翻译： 本发明提供：包括²-Ga 2 O 3单晶的半导体衬底，其上可以使用氢化物​​气相外延（HVPE）在其上以高生长速率生长包含²-Ga 2 O 3单晶的外延层 ） 方法; 包括这种半导体衬底和外延层的外延晶片; 以及这种外延晶片的制造方法。 作为本发明的一个实施方案，提供了一种半导体衬底（11），其用作通过HVPE方法进行外延晶体生长的基底衬底，其中半导体衬底包括基于Θ-Ga 2 O 3的单晶和平面 平行于Θ-Ga 2 O 3单晶的[010]轴作为主面。

公开(公告)号：EP3396030A1

公开(公告)日：2018-10-31

申请号：EP16875325.9

申请日：2016-11-16

申请人： Tamura Corporation ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： GOTO, Ken ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： C30B29/16

CPC分类号： C30B29/16

摘要： [Problem] To provide: a semiconductor substrate comprising a β-Ga 2 O 3 -based single crystal, with which an epitaxial layer comprising the β-Ga 2 O 3 -based single crystal can be grown by the HVPE method at a high growth rate, or with which an epitaxial layer comprising the β-Ga 2 O 3 -based single crystal having good surface morphology can be grown; an epitaxial wafer having the semiconductor substrate and an epitaxial layer; and a method for producing the epitaxial wafer. [Solution] One embodiment is a semiconductor substrate 11 which is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method, wherein the semiconductor substrate 11 comprises a β-Ga2O3-based single crystal, and a plane parallel to the [100] axis of the β-Ga2O3-based single crystal is a principal plane 12.

公开(公告)号：EP3273487A1

公开(公告)日：2018-01-24

申请号：EP16768439.8

申请日：2016-03-09

申请人： Tamura Corporation ,  National Institute of Information and Communication Technology ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： SASAKI, Kohei ,  GOTO, Ken ,  HIGASHIWAKI, Masataka ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： H01L29/872 ,  C23C16/40 ,  C30B29/16 ,  H01L21/329 ,  H01L29/24 ,  H01L29/47

CPC分类号： H01L29/872 ,  C23C16/40 ,  C23C16/4488 ,  C30B15/34 ,  C30B23/02 ,  C30B25/20 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/24 ,  H01L29/47 ,  H01L29/66969

摘要： [Problem]
To provide a Ga 2 O 3 -based high withstand voltage Schottky barrier diode having excellent withstand voltage characteristics. [Solution] According to one embodiment of the present invention, provided is a high withstand voltage Schottky barrier diode 1 having: a first layer 10, which is formed of a first Ga 2 O 3 -based single crystal containing a first Group IV element, and Cl at a concentration equal to or lower than 5×10 16 cm -3 , and which has an effective donor concentration not lower than 1×10 13 but not higher than 6.0×10 17 cm -3 ; a second layer 12, which is formed of a second Ga 2 O 3 -based single crystal containing a second Group IV element, and which has an effective donor concentration that is higher than that of the first layer 10, said second layer being laminated on the first layer 10; an anode electrode 14 formed on the first layer 10; and a cathode electrode 15 formed on the second layer 12.

摘要翻译： [问题]提供具有优异的耐电压特性的Ga 2 O 3基高耐压肖特基势垒二极管。 根据本发明的一个实施例，提供了一种高耐压肖特基势垒二极管1，其具有：第一层10，其由包含第一IV族元素的第一Ga 2 O 3基单晶形成， 等于或低于5×1016cm-3的浓度，并且具有不小于1×1013但不大于6.0×1017cm-3的有效施主浓度; 第二层12，其由包含第二IV族元素的第二基于Ga 2 O 3的单晶形成，并且具有比第一层10更高的有效施主浓度，所述第二层被层压在第一层上 10; 形成在第一层10上的阳极电极14; 和形成在第二层12上的阴极电极15。

公开(公告)号：EP3272915A1

公开(公告)日：2018-01-24

申请号：EP16768238.4

申请日：2016-02-17

申请人： Tamura Corporation ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： GOTO, Ken ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： C30B29/16 ,  C23C16/40 ,  C30B25/20 ,  H01L21/205

CPC分类号： C30B29/16 ,  C23C16/40 ,  C30B25/20 ,  C30B29/68 ,  C30B31/08 ,  H01L21/205

摘要： [Problem] To provide a crystal laminate structure having a β-Ga 2 O 3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga 2 O 3 based substrate 10; and a β-Ga 2 O 3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga 2 O 3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1 × 10 13 to 5.0 × 10 20 atoms/cm 3 .

摘要翻译： [问题]提供一种具有β-Ga 2 O 3系单晶膜的结晶层叠结构，其中在整个晶体中包含掺杂剂并且掺杂剂的浓度可以在宽范围内设定。 解决方案在本发明的一个实施例中，提供了一种晶体层压结构1，其包括：基于Ga 2 O 3的基板10; 以及在Ga 2 O 3系基板10的主面11上通过外延生长而形成的β-Ga 2 O 3系单晶膜12，其包含Cl和以1×10 13〜5.0×10 20的浓度与晶体生长平行地掺杂的掺杂剂 原子/ cm 3。

公开(公告)号：EP3059336A1

公开(公告)日：2016-08-24

申请号：EP14843243.8

申请日：2014-09-10

申请人： National University Corporation Tokyo University Of Agriculture and Technology

发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： C30B29/38

CPC分类号： C30B25/14 ,  C30B25/00 ,  C30B25/02 ,  C30B25/08 ,  C30B25/10 ,  C30B25/165 ,  C30B25/18 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

摘要： A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1 × 10 17 /cm 3 or lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0 × 10 -3 atm or higher onto the substrate, and growing a GaN crystal in the -C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200°C or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0 × 10 -3 atm or higher onto the substrate, and growing an AlN crystal in the -C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400°C or higher.

摘要翻译： 氮化物半导体晶体的直径为4英寸以上，翘曲为曲率半径为100μm以上，杂质浓度为1×10 17 / cm 3以下。 一种氮化物半导体晶体的制造方法，其特征在于，在基板上设置基板，将分压为9.0×10 -3 atm以上的三卤化镓气体供给到基板上，在基板上沿-C轴方向生长GaN晶体 其中GaN晶体的生长温度为1200℃以上，或者氮化物半导体晶体的制造方法包括提供基板，将分压为9.0×10 -3 atm以上的三卤化铝气体供给到 衬底，并且在衬底上在-C轴方向上生长AlN晶体，其中AlN晶体的生长温度为1400℃或更高。