公开(公告)号：EP3619748B1

公开(公告)日：2024-04-17

申请号：EP18794585.2

申请日：2018-05-07

IPC分类号： H01L21/683 ,  H01L23/00 ,  H01L33/00 ,  H01S5/02 ,  H01L21/02 ,  H01S5/343 ,  H01L33/46 ,  H01L33/32 ,  H01L33/20

CPC分类号： H01L33/0075 ,  H01L33/20 ,  H01S5/0217 ,  H01S5/34333 ,  H01S2304/1220130101 ,  H01L33/0093 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/02458 ,  H01L2224/3224520130101 ,  H01L2224/8319220130101 ,  H01L2224/8389520130101 ,  H01L2224/3222520130101 ,  H01L2224/8344420130101 ,  H01L2224/8320320130101 ,  H01L2224/0561120130101 ,  H01L2224/0564420130101 ,  H01L2924/1574720130101 ,  H01L2924/103320130101 ,  H01L2224/0402620130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/8380520130101 ,  H01L24/83 ,  H01L2224/8301320130101 ,  H01L2224/8302220130101 ,  H01L2224/2911120130101 ,  H01L2224/2914420130101 ,  H01L2224/8344720130101 ,  H01L2224/8044420130101 ,  H01L2224/8001320130101 ,  H01L2224/8020320130101 ,  H01L2224/8089520130101 ,  H01L24/80 ,  H01L2224/0824520130101 ,  H01L2224/0822520130101 ,  H01L24/08 ,  H01L2224/0420130101 ,  H01L2224/034520130101 ,  H01L24/03 ,  H01L2224/8000620130101 ,  H01L2224/8300520130101 ,  H01L2224/0823820130101 ,  H01L2224/0825820130101 ,  H01L2224/0555820130101 ,  H01L21/6835 ,  H01L24/06 ,  H01L2224/0618120130101 ,  H01L2924/1204220130101 ,  H01L2224/920220130101 ,  H01L2224/9420130101 ,  H01L24/94 ,  H01L24/92 ,  H01L2224/9214220130101 ,  H01L2224/921220130101 ,  H01L2221/6838120130101 ,  H01L2221/6831820130101 ,  H01L2221/683520130101 ,  H01L2221/6836320130101 ,  H01L2224/80420130101 ,  H01L2224/804920130101 ,  H01L2224/051820130101 ,  H01L2224/0514420130101 ,  H01L2224/0566920130101 ,  H01L2224/0518420130101 ,  H01L2224/0513920130101 ,  H01L2224/0566420130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/0516420130101 ,  H01L2224/0516620130101 ,  H01L2224/0516920130101 ,  H01L2224/056820130101 ,  H01L2224/0568420130101 ,  H01L2224/0566620130101 ,  H01L2224/0515520130101 ,  H01S5/0203 ,  H01L2224/29120130101

公开(公告)号：EP4411843A2

公开(公告)日：2024-08-07

申请号：EP24169398.5

申请日：2018-05-07

申请人： The Regents of the University of California

发明人： KAMIKAWA, Takeshi ,  GANDROTHULA, Srinivas ,  LI, Hongjian ,  COHEN, Daniel A.

IPC分类号： H01L33/20

CPC分类号： H01L33/0075 ,  H01L33/20 ,  H01S5/0217 ,  H01S5/34333 ,  H01S2304/1220130101 ,  H01L33/0093 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/02458 ,  H01L2224/3224520130101 ,  H01L2224/8319220130101 ,  H01L2224/8389520130101 ,  H01L2224/3222520130101 ,  H01L2224/8344420130101 ,  H01L2224/8320320130101 ,  H01L2224/0561120130101 ,  H01L2224/0564420130101 ,  H01L2924/1574720130101 ,  H01L2924/103320130101 ,  H01L2224/0402620130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/8380520130101 ,  H01L24/83 ,  H01L2224/8301320130101 ,  H01L2224/8302220130101 ,  H01L2224/2911120130101 ,  H01L2224/2914420130101 ,  H01L2224/8344720130101 ,  H01L2224/8044420130101 ,  H01L2224/8001320130101 ,  H01L2224/8020320130101 ,  H01L2224/8089520130101 ,  H01L24/80 ,  H01L2224/0824520130101 ,  H01L2224/0822520130101 ,  H01L24/08 ,  H01L2224/0420130101 ,  H01L2224/034520130101 ,  H01L24/03 ,  H01L2224/8000620130101 ,  H01L2224/8300520130101 ,  H01L2224/0823820130101 ,  H01L2224/0825820130101 ,  H01L2224/0555820130101 ,  H01L21/6835 ,  H01L24/06 ,  H01L2224/0618120130101 ,  H01L2924/1204220130101 ,  H01L2224/920220130101 ,  H01L2224/9420130101 ,  H01L24/94 ,  H01L24/92 ,  H01L2224/9214220130101 ,  H01L2224/921220130101 ,  H01L2221/6838120130101 ,  H01L2221/6831820130101 ,  H01L2221/683520130101 ,  H01L2221/6836320130101 ,  H01L2224/80420130101 ,  H01L2224/804920130101 ,  H01L2224/051820130101 ,  H01L2224/0514420130101 ,  H01L2224/0566920130101 ,  H01L2224/0518420130101 ,  H01L2224/0513920130101 ,  H01L2224/0566420130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/0516420130101 ,  H01L2224/0516620130101 ,  H01L2224/0516920130101 ,  H01L2224/056820130101 ,  H01L2224/0568420130101 ,  H01L2224/0566620130101 ,  H01L2224/0515520130101 ,  H01S5/0203 ,  H01L2224/29120130101

摘要： A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.