公开(公告)号：EP3619748B1

公开(公告)日：2024-04-17

申请号：EP18794585.2

申请日：2018-05-07

IPC分类号： H01L21/683 ,  H01L23/00 ,  H01L33/00 ,  H01S5/02 ,  H01L21/02 ,  H01S5/343 ,  H01L33/46 ,  H01L33/32 ,  H01L33/20

CPC分类号： H01L33/0075 ,  H01L33/20 ,  H01S5/0217 ,  H01S5/34333 ,  H01S2304/1220130101 ,  H01L33/0093 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/02458 ,  H01L2224/3224520130101 ,  H01L2224/8319220130101 ,  H01L2224/8389520130101 ,  H01L2224/3222520130101 ,  H01L2224/8344420130101 ,  H01L2224/8320320130101 ,  H01L2224/0561120130101 ,  H01L2224/0564420130101 ,  H01L2924/1574720130101 ,  H01L2924/103320130101 ,  H01L2224/0402620130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/8380520130101 ,  H01L24/83 ,  H01L2224/8301320130101 ,  H01L2224/8302220130101 ,  H01L2224/2911120130101 ,  H01L2224/2914420130101 ,  H01L2224/8344720130101 ,  H01L2224/8044420130101 ,  H01L2224/8001320130101 ,  H01L2224/8020320130101 ,  H01L2224/8089520130101 ,  H01L24/80 ,  H01L2224/0824520130101 ,  H01L2224/0822520130101 ,  H01L24/08 ,  H01L2224/0420130101 ,  H01L2224/034520130101 ,  H01L24/03 ,  H01L2224/8000620130101 ,  H01L2224/8300520130101 ,  H01L2224/0823820130101 ,  H01L2224/0825820130101 ,  H01L2224/0555820130101 ,  H01L21/6835 ,  H01L24/06 ,  H01L2224/0618120130101 ,  H01L2924/1204220130101 ,  H01L2224/920220130101 ,  H01L2224/9420130101 ,  H01L24/94 ,  H01L24/92 ,  H01L2224/9214220130101 ,  H01L2224/921220130101 ,  H01L2221/6838120130101 ,  H01L2221/6831820130101 ,  H01L2221/683520130101 ,  H01L2221/6836320130101 ,  H01L2224/80420130101 ,  H01L2224/804920130101 ,  H01L2224/051820130101 ,  H01L2224/0514420130101 ,  H01L2224/0566920130101 ,  H01L2224/0518420130101 ,  H01L2224/0513920130101 ,  H01L2224/0566420130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/0516420130101 ,  H01L2224/0516620130101 ,  H01L2224/0516920130101 ,  H01L2224/056820130101 ,  H01L2224/0568420130101 ,  H01L2224/0566620130101 ,  H01L2224/0515520130101 ,  H01S5/0203 ,  H01L2224/29120130101

公开(公告)号：EP3848961B1

公开(公告)日：2024-09-18

申请号：EP18932539.2

申请日：2018-09-06

IPC分类号： H01L23/48 ,  H01L21/56 ,  H01L23/28 ,  H01L23/50 ,  H01L21/48 ,  H01L23/31 ,  H01L23/495

CPC分类号： H01L2224/4024520130101 ,  H01L2224/7326520130101 ,  H01L2924/18120130101 ,  H01L2224/4824720130101 ,  H01L2224/3224520130101 ,  H01L2224/4809120130101 ,  H01L23/49548 ,  H01L21/4821 ,  H01L23/49582 ,  H01L23/3142 ,  H01L21/565 ,  H01L23/3107 ,  H01L2224/7326320130101 ,  H01L2224/7322120130101 ,  H01L2224/4049920130101 ,  H01L24/32 ,  H01L24/48 ,  H01L24/40 ,  H01L2224/4513920130101 ,  H01L2224/8544720130101 ,  H01L2224/8343920130101 ,  H01L2224/4512420130101 ,  H01L2224/2913920130101 ,  H01L2224/8345520130101 ,  H01L2224/8541120130101 ,  H01L2224/8544420130101 ,  H01L2224/8341120130101 ,  H01L2224/8344420130101 ,  H01L2224/4514420130101 ,  H01L2224/8441120130101 ,  H01L2224/8444420130101 ,  H01L2224/4514720130101 ,  H01L2224/8545520130101 ,  H01L2224/8344720130101 ,  H01L2224/8543920130101 ,  H01L2224/3714720130101 ,  H01L2224/29120130101 ,  H01L2224/8444720130101 ,  H01L2224/8445520130101 ,  H01L2224/8443920130101

公开(公告)号：EP2546869B1

公开(公告)日：2024-08-28

申请号：EP11844936.2

申请日：2011-09-08

IPC分类号： H01L21/60 ,  H01L21/48 ,  H01L23/498 ,  H01L23/488 ,  H01L25/07

CPC分类号： H01L23/3735 ,  H01L23/49811 ,  H01L23/49838 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L25/072 ,  H01L2224/3222520130101 ,  H01L2224/4809120130101 ,  H01L2224/4813720130101 ,  H01L2224/4917520130101 ,  H01L2224/7326520130101 ,  H01L2224/8305120130101 ,  H01L2224/9224720130101 ,  H01L2924/0101320130101 ,  H01L2924/0103320130101 ,  H01L2924/01420130101 ,  H01L2924/120320130101 ,  H01L2924/1305520130101 ,  H01L2924/1910720130101 ,  H01L2924/351220130101 ,  H01L2924/0100520130101 ,  H01L2924/0100620130101 ,  H01L2924/0104220130101 ,  H01L2924/0107920130101 ,  H01L2224/4822720130101 ,  H01L2924/013220130101 ,  H01L24/29 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/29120130101 ,  H01L2224/4512420130101 ,  H01L2224/4514420130101 ,  H01L2224/4514720130101 ,  H01L2224/8544720130101 ,  H01L2924/0101420130101 ,  H01L2924/0102820130101 ,  H01L2924/0102920130101 ,  H01L24/45 ,  H01L24/83 ,  H01L24/85 ,  H01L2224/2617520130101 ,  H01L2224/8344720130101 ,  H01L2224/4911120130101 ,  H01L2924/3010720130101 ,  H01L2924/130520130101 ,  H01L2224/4501520130101 ,  H01L2924/1578720130101 ,  H01L2224/4884720130101 ,  H01L2224/4864720130101 ,  H01L2224/4874720130101 ,  H01L2924/0001120130101 ,  H01L2224/4911320130101

公开(公告)号：EP3234988B1

公开(公告)日：2024-10-09

申请号：EP15870960.0

申请日：2015-12-16

IPC分类号： H01L21/603 ,  H01L21/60 ,  H01L21/48 ,  H01L23/495 ,  H01L23/488

CPC分类号： H01L24/83 ,  H01L24/97 ,  H01L2224/2933920130101 ,  H01L2224/3224520130101 ,  H01L2224/8319120130101 ,  H01L2224/8319220130101 ,  H01L2224/8320320130101 ,  H01L2224/838420130101 ,  H01L2224/8398620130101 ,  H01L2224/9720130101 ,  H01L23/49524 ,  H01L23/49582 ,  H01L21/4825 ,  H01L2224/3701220130101 ,  H01L2224/4049920130101 ,  H01L2224/3701320130101 ,  H01L24/37 ,  H01L24/40 ,  H01L24/92 ,  H01L2224/8300120130101 ,  H01L2224/8343920130101 ,  H01L2224/8344720130101 ,  H01L2224/8390720130101 ,  H01L2224/920520130101 ,  H01L2224/922120130101 ,  H01L2224/8400120130101 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/84 ,  H01L2224/4010520130101 ,  H01L2224/4024520130101 ,  H01L2224/7326320130101 ,  H01L2224/8420320130101 ,  H01L2224/848420130101 ,  H01L24/38

公开(公告)号：EP4411843A2

公开(公告)日：2024-08-07

申请号：EP24169398.5

申请日：2018-05-07

申请人： The Regents of the University of California

发明人： KAMIKAWA, Takeshi ,  GANDROTHULA, Srinivas ,  LI, Hongjian ,  COHEN, Daniel A.

IPC分类号： H01L33/20

CPC分类号： H01L33/0075 ,  H01L33/20 ,  H01S5/0217 ,  H01S5/34333 ,  H01S2304/1220130101 ,  H01L33/0093 ,  H01L21/02389 ,  H01L21/0254 ,  H01L21/02647 ,  H01L21/02458 ,  H01L2224/3224520130101 ,  H01L2224/8319220130101 ,  H01L2224/8389520130101 ,  H01L2224/3222520130101 ,  H01L2224/8344420130101 ,  H01L2224/8320320130101 ,  H01L2224/0561120130101 ,  H01L2224/0564420130101 ,  H01L2924/1574720130101 ,  H01L2924/103320130101 ,  H01L2224/0402620130101 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/8380520130101 ,  H01L24/83 ,  H01L2224/8301320130101 ,  H01L2224/8302220130101 ,  H01L2224/2911120130101 ,  H01L2224/2914420130101 ,  H01L2224/8344720130101 ,  H01L2224/8044420130101 ,  H01L2224/8001320130101 ,  H01L2224/8020320130101 ,  H01L2224/8089520130101 ,  H01L24/80 ,  H01L2224/0824520130101 ,  H01L2224/0822520130101 ,  H01L24/08 ,  H01L2224/0420130101 ,  H01L2224/034520130101 ,  H01L24/03 ,  H01L2224/8000620130101 ,  H01L2224/8300520130101 ,  H01L2224/0823820130101 ,  H01L2224/0825820130101 ,  H01L2224/0555820130101 ,  H01L21/6835 ,  H01L24/06 ,  H01L2224/0618120130101 ,  H01L2924/1204220130101 ,  H01L2224/920220130101 ,  H01L2224/9420130101 ,  H01L24/94 ,  H01L24/92 ,  H01L2224/9214220130101 ,  H01L2224/921220130101 ,  H01L2221/6838120130101 ,  H01L2221/6831820130101 ,  H01L2221/683520130101 ,  H01L2221/6836320130101 ,  H01L2224/80420130101 ,  H01L2224/804920130101 ,  H01L2224/051820130101 ,  H01L2224/0514420130101 ,  H01L2224/0566920130101 ,  H01L2224/0518420130101 ,  H01L2224/0513920130101 ,  H01L2224/0566420130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/0516420130101 ,  H01L2224/0516620130101 ,  H01L2224/0516920130101 ,  H01L2224/056820130101 ,  H01L2224/0568420130101 ,  H01L2224/0566620130101 ,  H01L2224/0515520130101 ,  H01S5/0203 ,  H01L2224/29120130101

摘要： A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.

公开(公告)号：EP3103138B1

公开(公告)日：2024-07-03

申请号：EP15714453.6

申请日：2015-03-30

IPC分类号： H01L21/60 ,  H01L21/50 ,  H01L23/498 ,  H01L23/10 ,  H01L23/488 ,  H01L23/473

CPC分类号： H01L23/10 ,  H01L23/473 ,  H01L23/49833 ,  H01L21/50 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/75 ,  H01L24/83 ,  H01L2224/2911120130101 ,  H01L2224/2911620130101 ,  H01L2224/2933920130101 ,  H01L2224/3222520130101 ,  H01L2224/3318120130101 ,  H01L2224/75320130101 ,  H01L2224/8319220130101 ,  H01L2224/8343920130101 ,  H01L2224/8344420130101 ,  H01L2224/8344720130101 ,  H01L2224/838220130101 ,  H01L2224/838420130101 ,  H01L2924/1025320130101 ,  H01L2924/1027220130101 ,  H01L2924/1032920130101 ,  H01L2924/103320130101 ,  H01L2924/1519220130101 ,  H01L2924/1615220130101 ,  H01L2924/1623520130101 ,  H01L2924/1625120130101 ,  H01L2924/1678720130101 ,  H01L2924/167920130101 ,  H01L2924/16520130101 ,  H01L2224/2929420130101 ,  H01L23/3735

公开(公告)号：EP4141924B1

公开(公告)日：2024-07-24

申请号：EP22193090.2

申请日：2022-08-31

IPC分类号： H01L23/488 ,  H01L21/60 ,  H01L23/00 ,  B23K35/26 ,  B23K35/28

CPC分类号： H01L24/32 ,  H01L24/83 ,  H01L24/29 ,  H01L2224/8382520130101 ,  H01L2224/838120130101 ,  H01L2224/3250720130101 ,  H01L2224/8390720130101 ,  H01L2224/8306520130101 ,  H01L2224/8321120130101 ,  H01L2224/2901720130101 ,  H01L2224/8301120130101 ,  H01L2224/8302220130101 ,  H01L2224/8310120130101 ,  H01L2224/2901920130101 ,  H01L2224/9520130101 ,  H01L2224/3222720130101 ,  H01L2224/3224520130101 ,  H01L2224/0402620130101 ,  H01L2224/271120130101 ,  H01L2224/29120130101 ,  H01L24/27 ,  H01L24/95 ,  H01L2224/3205720130101 ,  B23K35/26 ,  B23K35/262 ,  B23K35/264 ,  B23K35/266 ,  B23K35/282 ,  H01L24/05 ,  H01L2224/0517220130101 ,  H01L2224/2910120130101 ,  H01L2224/2913920130101 ,  H01L2224/2911820130101 ,  H01L2224/0564420130101 ,  H01L2224/8345520130101 ,  H01L2224/0513820130101 ,  H01L2224/0566920130101 ,  H01L2224/2910520130101 ,  H01L2224/8344420130101 ,  H01L2224/8347220130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/0567220130101 ,  H01L2224/2910920130101 ,  H01L2224/8346420130101 ,  H01L2224/0515520130101 ,  H01L2224/0564720130101 ,  H01L2224/8343920130101 ,  H01L2224/8346920130101 ,  H01L2224/0566420130101 ,  H01L2224/2914720130101 ,  H01L2224/0516420130101 ,  H01L2224/8344720130101 ,  H01L2224/2911320130101 ,  H01L2224/291220130101 ,  H01L2224/2911120130101 ,  H01L2224/2914420130101

公开(公告)号：EP3758058B1

公开(公告)日：2024-07-17

申请号：EP20165695.6

申请日：2020-03-25

IPC分类号： H01L23/42 ,  H01L23/433

CPC分类号： H01L23/42 ,  H01L23/433 ,  H01L2224/1718120130101 ,  H01L2224/7320420130101 ,  H01L2224/7325320130101 ,  H01L2224/1622720130101 ,  H01L2924/1531120130101 ,  H01L2924/1625120130101 ,  H01L2924/16320130101 ,  H01L24/29 ,  H01L2224/3222520130101 ,  H01L2224/3318120130101 ,  H01L2924/163120130101 ,  H01L2224/291920130101 ,  H01L2224/3201320130101 ,  H01L2224/3205820130101 ,  H01L2224/0402620130101 ,  H01L24/05 ,  H01L2224/3250320130101 ,  H01L2224/0556720130101 ,  H01L24/13 ,  H01L2224/13120130101 ,  H01L2224/1311120130101 ,  H01L24/16 ,  H01L24/32 ,  H01L2224/039120130101 ,  H01L24/17 ,  H01L24/33 ,  H01L2224/1624520130101 ,  H01L2224/3224520130101 ,  H01L2924/1615220130101 ,  H01L2924/17320130101 ,  H01L2224/8319120130101 ,  H01L2224/8119220130101 ,  H01L2224/7310420130101 ,  H01L24/14 ,  H01L2224/1413120130101 ,  H01L2224/1413320130101 ,  H01L2224/141620130101 ,  H01L24/73 ,  H01L2924/1531220130101 ,  H01L2924/1531320130101 ,  H01L2224/140320130101 ,  H01L2224/141420130101 ,  H01L2224/1301420130101 ,  H01L2224/1301320130101 ,  H01L2224/1301220130101 ,  H01L2224/3350520130101 ,  H01L2224/1405120130101 ,  H01L2224/2743620130101 ,  H01L2224/2731220130101 ,  H01L2224/274720130101 ,  H01L2224/8386220130101 ,  H01L2224/8387420130101 ,  H01L2224/9222220130101 ,  H01L2224/9224220130101 ,  H01L24/27 ,  H01L24/92 ,  H01L24/11 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/8181520130101 ,  H01L2224/1710620130101 ,  H01L23/367 ,  H01L2224/1310920130101 ,  H01L2224/8344720130101 ,  H01L2224/8144720130101 ,  H01L2224/8139920130101 ,  H01L2224/1313920130101 ,  H01L2224/1314720130101 ,  H01L2924/35120130101 ,  H01L2924/351220130101

公开(公告)号：EP3819059B1

公开(公告)日：2024-05-29

申请号：EP20205579.4

申请日：2020-11-04

IPC分类号： B23K1/00 ,  B23K1/19 ,  B23K1/20 ,  B23K20/02 ,  B23K20/16 ,  B23K20/233 ,  B23K101/42

CPC分类号： B23K1/0016 ,  B23K1/19 ,  B23K1/20 ,  B23K20/026 ,  B23K20/16 ,  B23K20/233 ,  B23K2101/4220180801 ,  H01L24/83 ,  H01L24/29 ,  H01L2224/8382520130101 ,  H01L2224/838120130101 ,  H01L24/32 ,  H01L2224/3250320130101 ,  H01L2224/3250720130101 ,  H01L2224/8381520130101 ,  H01L25/50 ,  H01L2224/8319220130101 ,  H01L2224/2733420130101 ,  H01L24/27 ,  H01L2224/8390720130101 ,  H01L2224/3201220130101 ,  H01L2224/3318120130101 ,  H01L2224/7326320130101 ,  H01L2224/8319120130101 ,  H01L2924/143120130101 ,  H01L2924/1220130101 ,  H01L2224/8306520130101 ,  H01L2224/832120130101 ,  H01L2224/2929420130101 ,  H01L2224/9520130101 ,  H01L24/95 ,  H01L2224/9420130101 ,  H01L2224/756520130101 ,  H01L24/05 ,  H01L2224/0402620130101 ,  H01L2224/2900620130101 ,  H01L2224/2900720130101 ,  H01L2224/32120130101 ,  H01L2224/3222720130101 ,  H01L23/49811 ,  H01L2224/3201320130101 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/8319320130101 ,  H01L2224/4022720130101 ,  H01L2224/4009520130101 ,  H01L2224/8482520130101 ,  H01L2224/8481520130101 ,  H01L2224/4049920130101 ,  H01L2224/3224520130101 ,  H01L24/33 ,  H01L2224/330120130101 ,  H01L2224/3350520130101 ,  H01L24/40 ,  H01L24/75 ,  H01L24/84 ,  H01L2224/0516420130101 ,  H01L2224/2743620130101 ,  H01L23/49524 ,  H01L2224/8343820130101 ,  H01L2224/0517220130101 ,  H01L2224/2910120130101 ,  H01L2224/2913920130101 ,  H01L2224/2911820130101 ,  H01L2224/0564420130101 ,  H01L2224/8345520130101 ,  H01L2224/0513820130101 ,  H01L2224/0566920130101 ,  H01L2224/2910520130101 ,  H01L2224/8347220130101 ,  H01L2224/8344420130101 ,  H01L2224/0565520130101 ,  H01L2224/0563920130101 ,  H01L2224/0567220130101 ,  H01L2224/2910920130101 ,  H01L2224/8346420130101 ,  H01L2224/0515520130101 ,  H01L2224/0564720130101 ,  H01L2224/8343920130101 ,  H01L2224/8346920130101 ,  H01L2224/0566420130101 ,  H01L2224/2914720130101 ,  H01L2224/8344720130101 ,  H01L2224/2911320130101 ,  H01L2224/291220130101 ,  H01L2224/0563820130101 ,  H01L2224/2911120130101 ,  H01L2224/2914420130101

公开(公告)号：EP4372809A1

公开(公告)日：2024-05-22

申请号：EP22207602.8

申请日：2022-11-15

申请人： Infineon Technologies Austria AG

发明人： OTREMBA, Ralf

IPC分类号： H01L23/488 ,  H01L21/60

CPC分类号： H01L2224/8382520130101 ,  H01L2924/1027220130101 ,  H01L2224/2908220130101 ,  H01L2224/2914720130101 ,  H01L2224/2915520130101 ,  H01L2224/8345520130101 ,  H01L2224/2911120130101 ,  H01L2224/2910920130101 ,  H01L2224/0618120130101 ,  H01L2224/0402620130101 ,  H01L2224/0403420130101 ,  H01L2224/0404220130101 ,  H01L2224/0563920130101 ,  H01L2224/0565520130101 ,  H01L2224/7326320130101 ,  H01L2224/7326520130101 ,  H01L2224/9224720130101 ,  H01L2224/9224620130101 ,  H01L2224/3250720130101 ,  H01L2224/8344720130101 ,  H01L2224/8545520130101 ,  H01L2224/8445520130101 ,  H01L2224/4512420130101 ,  H01L2224/3224520130101 ,  H01L2224/4824720130101 ,  H01L2224/4024720130101 ,  H01L24/83 ,  H01L24/29 ,  H01L24/32 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/40 ,  H01L24/37 ,  H01L24/45 ,  H01L2924/120320130101

摘要： A method (100) for fabricating a semiconductor device (20, 30) comprises: providing (110) a diode layer stack (10, 10A) comprising a silicon carbide diode die (11) comprising a first main surface at an anode side of the diode die (11) and a second main surface opposite to the first main surface at a cathode side of the diode die (11) and a layer stack (12) on the first main surface of the diode die (11), the layer stack (12) comprising a copper layer (12.1) disposed on the first main surface of the diode die (11) and a tin or indium containing layer (12.3) disposed above the copper layer (12.1); providing (120) a die pad (21) comprising a copper leadframe (21.1) comprising a first main surface and a second main surface opposite to the first main surface; and performing a diffusion soldering process (130) for connecting the diode layer stack (12) to the first main surface of the die pad (21), for example in a temperature range from 350°C to 400°C and/or for a time duration in a range from 50 ms to 1 s or from 100 ms to 200 ms, to form an intermetallic compound layer (12A) from the layer stack (12). The layer stack (12) may further comprise a nickel containing layer (12.2) disposed on the copper layer (12.1), wherein the tin containing layer (12.3) is disposed on the nickel containing layer (12.2). The copper leadframe (21.1) may further comprise nickel containing layers (21.2) disposed on both of the first and second main surfaces thereof. The nickel containing layer(s) (12.2, 21.2) may comprise pure nickel or an alloy of nickel with vanadium and/or phosphor. The tin or indium containing layer (12.3) may comprise pure tin or pure indium or an alloy of tin and gold or indium and gold. The diode layer stack (12) may further comprise a nickel layer (13) or a silver layer on the second surface of the diode die (11). The method may further comprise providing a lead (31) and connecting the nickel layer (13) or the silver layer of the diode die (11) by at least one of a bond wire, a wedge or a clip (32) with the lead (31). The intermetallic compound layer (12A) may comprise Cu and Sn or In, either in the form of a spatially homogeneous constitution or in the form of a structure in which two outer copper layers enclose an inner tin or indium layer. The intermetallic compound layer (12A) may comprise a layer structure comprising a symmetry around a central Sn or In layer. The intermetallic compound layer (12A) may further comprise nickel, wherein the intermetallic compound layer (12A) may comprise a layer sequence Cu/Ni/Sn/Ni/Cu or Cu/Ni/In/Ni/Cu, i.e., a layer sequence comprising a symmetry of the Cu and Ni layers around a central Sn or In layer.