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公开(公告)号:EP3619748B1
公开(公告)日:2024-04-17
申请号:EP18794585.2
申请日:2018-05-07
IPC分类号: H01L21/683 , H01L23/00 , H01L33/00 , H01S5/02 , H01L21/02 , H01S5/343 , H01L33/46 , H01L33/32 , H01L33/20
CPC分类号: H01L33/0075 , H01L33/20 , H01S5/0217 , H01S5/34333 , H01S2304/1220130101 , H01L33/0093 , H01L21/02389 , H01L21/0254 , H01L21/02647 , H01L21/02458 , H01L2224/3224520130101 , H01L2224/8319220130101 , H01L2224/8389520130101 , H01L2224/3222520130101 , H01L2224/8344420130101 , H01L2224/8320320130101 , H01L2224/0561120130101 , H01L2224/0564420130101 , H01L2924/1574720130101 , H01L2924/103320130101 , H01L2224/0402620130101 , H01L24/05 , H01L24/29 , H01L24/32 , H01L2224/8380520130101 , H01L24/83 , H01L2224/8301320130101 , H01L2224/8302220130101 , H01L2224/2911120130101 , H01L2224/2914420130101 , H01L2224/8344720130101 , H01L2224/8044420130101 , H01L2224/8001320130101 , H01L2224/8020320130101 , H01L2224/8089520130101 , H01L24/80 , H01L2224/0824520130101 , H01L2224/0822520130101 , H01L24/08 , H01L2224/0420130101 , H01L2224/034520130101 , H01L24/03 , H01L2224/8000620130101 , H01L2224/8300520130101 , H01L2224/0823820130101 , H01L2224/0825820130101 , H01L2224/0555820130101 , H01L21/6835 , H01L24/06 , H01L2224/0618120130101 , H01L2924/1204220130101 , H01L2224/920220130101 , H01L2224/9420130101 , H01L24/94 , H01L24/92 , H01L2224/9214220130101 , H01L2224/921220130101 , H01L2221/6838120130101 , H01L2221/6831820130101 , H01L2221/683520130101 , H01L2221/6836320130101 , H01L2224/80420130101 , H01L2224/804920130101 , H01L2224/051820130101 , H01L2224/0514420130101 , H01L2224/0566920130101 , H01L2224/0518420130101 , H01L2224/0513920130101 , H01L2224/0566420130101 , H01L2224/0565520130101 , H01L2224/0563920130101 , H01L2224/0516420130101 , H01L2224/0516620130101 , H01L2224/0516920130101 , H01L2224/056820130101 , H01L2224/0568420130101 , H01L2224/0566620130101 , H01L2224/0515520130101 , H01S5/0203 , H01L2224/29120130101
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公开(公告)号:EP4411843A2
公开(公告)日:2024-08-07
申请号:EP24169398.5
申请日:2018-05-07
IPC分类号: H01L33/20
CPC分类号: H01L33/0075 , H01L33/20 , H01S5/0217 , H01S5/34333 , H01S2304/1220130101 , H01L33/0093 , H01L21/02389 , H01L21/0254 , H01L21/02647 , H01L21/02458 , H01L2224/3224520130101 , H01L2224/8319220130101 , H01L2224/8389520130101 , H01L2224/3222520130101 , H01L2224/8344420130101 , H01L2224/8320320130101 , H01L2224/0561120130101 , H01L2224/0564420130101 , H01L2924/1574720130101 , H01L2924/103320130101 , H01L2224/0402620130101 , H01L24/05 , H01L24/29 , H01L24/32 , H01L2224/8380520130101 , H01L24/83 , H01L2224/8301320130101 , H01L2224/8302220130101 , H01L2224/2911120130101 , H01L2224/2914420130101 , H01L2224/8344720130101 , H01L2224/8044420130101 , H01L2224/8001320130101 , H01L2224/8020320130101 , H01L2224/8089520130101 , H01L24/80 , H01L2224/0824520130101 , H01L2224/0822520130101 , H01L24/08 , H01L2224/0420130101 , H01L2224/034520130101 , H01L24/03 , H01L2224/8000620130101 , H01L2224/8300520130101 , H01L2224/0823820130101 , H01L2224/0825820130101 , H01L2224/0555820130101 , H01L21/6835 , H01L24/06 , H01L2224/0618120130101 , H01L2924/1204220130101 , H01L2224/920220130101 , H01L2224/9420130101 , H01L24/94 , H01L24/92 , H01L2224/9214220130101 , H01L2224/921220130101 , H01L2221/6838120130101 , H01L2221/6831820130101 , H01L2221/683520130101 , H01L2221/6836320130101 , H01L2224/80420130101 , H01L2224/804920130101 , H01L2224/051820130101 , H01L2224/0514420130101 , H01L2224/0566920130101 , H01L2224/0518420130101 , H01L2224/0513920130101 , H01L2224/0566420130101 , H01L2224/0565520130101 , H01L2224/0563920130101 , H01L2224/0516420130101 , H01L2224/0516620130101 , H01L2224/0516920130101 , H01L2224/056820130101 , H01L2224/0568420130101 , H01L2224/0566620130101 , H01L2224/0515520130101 , H01S5/0203 , H01L2224/29120130101
摘要: A method of removing a substrate, comprising: forming a growth restrict mask with a plurality of striped opening areas directly or indirectly upon a GaN-based substrate; and growing a plurality of semiconductor layers upon the GaN-based substrate using the growth restrict mask, such that the growth extends in a direction parallel to the striped opening areas of the growth restrict mask, and growth is stopped before the semiconductor layers coalesce, thereby resulting in island-like semiconductor layers. A device is processed for each of the island-like semiconductor layers. Etching is performed until at least a part of the growth restrict mask is exposed. The devices are then bonded to a support substrate. The GaN-based substrate is removed from the devices by a wet etching technique that at least partially dissolves the growth restrict mask. The GaN substrate that is removed then can be recycled.
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3.
公开(公告)号:EP4443480A1
公开(公告)日:2024-10-09
申请号:EP23192852.4
申请日:2023-08-23
申请人: LX Semicon Co., Ltd.
发明人: MOON, Dongwoo , KIM, Deogsoo , KIM, Taeryong
IPC分类号: H01L21/56 , H01L23/051 , H01L23/31 , H01L25/07 , H01L25/00 , H01L23/373 , H01L23/498
CPC分类号: H01L25/072 , H01L23/3735 , H01L25/50 , H01L21/561 , H01L23/3135 , H01L23/051 , H01L23/3121 , H01L24/06 , H01L23/5385 , H01L2224/0618120130101 , H01L2224/0824520130101 , H01L2224/060320130101 , H01L23/4334 , H01L23/49531 , H01L23/49562 , H01L23/49575
摘要: The embodiment relates to a power semiconductor module and a power converter including the same. A power semiconductor module according to an embodiment can include a first substrate and a second substrate, a sub-module disposed between the first substrate and the second substrate and a first conductive frame and a second conductive frame electrically connected to the sub-module. The sub-module can include a power semiconductor device disposed between a first internal conductive frame and a second internal conductive frame and a first mold disposed between the first internal conductive frame and the second internal conductive frame, and disposed on a side surface of the power semiconductor device.
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公开(公告)号:EP4325565A3
公开(公告)日:2024-07-03
申请号:EP23220744.9
申请日:2021-09-13
申请人: INTEL Corporation
IPC分类号: H01L23/538 , H01L21/98 , H01L25/065 , H01L21/60
CPC分类号: H01L24/96 , H01L2224/040120130101 , H01L2224/0410520130101 , H01L2224/1210520130101 , H01L2924/1816220130101 , H01L2924/1816120130101 , H01L2224/060320130101 , H01L2224/7320920130101 , H01L2224/1622720130101 , H01L2924/1531120130101 , H01L24/20 , H01L2224/21420130101 , H01L2224/8100520130101 , H01L2224/13120130101 , H01L2224/0822520130101 , H01L2224/0814520130101 , H01L2224/1614520130101 , H01L2224/8000620130101 , H01L2924/1910420130101 , H01L2224/1626520130101 , H01L2224/9212420130101 , H01L2224/921220130101 , H01L2224/7320120130101 , H01L2224/0826520130101 , H01L2224/0564720130101 , H01L2224/055720130101 , H01L2924/1519220130101 , H01L25/0652 , H01L25/0655 , H01L25/50 , H01L2225/0652420130101 , H01L2225/0651320130101 , H01L2225/0654120130101 , H01L24/73 , H01L24/92 , H01L2224/8203920130101 , H01L24/19 , H01L2924/351120130101 , H01L23/5385 , H01L23/49816 , H01L2224/0824520130101 , H01L2224/3224520130101 , H01L2224/3222520130101 , H01L2224/7326720130101 , H01L2224/9224420130101 , H01L2224/170320130101 , H01L2224/1100220130101 , H01L24/11 , H01L24/13 , H01L24/17 , H01L25/18 , H01L25/105 , H01L2225/102920130101 , H01L2225/102320130101 , H01L2924/38120130101 , H01L2224/140320130101 , H01L2224/8119320130101 , H01L2224/9520130101 , H01L2224/1302220130101 , H01L2224/1308220130101 , H01L2224/9620130101 , H01L2224/0555320130101 , H01L2224/061220130101 , H01L2224/0237520130101 , H01L24/14 , H01L2224/8139920130101 , H01L2224/023920130101 , H01L2224/21520130101 , H01L2224/1314720130101
摘要: Embodiments disclosed herein include electronic package and methods of forming such packages. In an embodiment, an electronic package comprises a mold layer and a first die embedded in the mold layer. In an embodiment, the first die comprises first pads at a first pitch and second pads at a second pitch. In an embodiment, the electronic package further comprises a second die embedded in the mold layer, where the second die comprises third pads at the first pitch and fourth pads at the second pitch. In an embodiment, a bridge die is embedded in the mold layer, and the bridge die electrically couples the second pads to the fourth pads.
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