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    RESONANT BODY TRANSISTOR AND OSCILLATOR
    1.
    发明公开
    RESONANT BODY TRANSISTOR AND OSCILLATOR 审中-公开
    响应体晶体管和振荡器

    公开(公告)号：EP2229723A1

    公开(公告)日：2010-09-22

    申请号：EP08859214.2

    申请日：2008-12-11

    申请人： Cornell University

    发明人： WEINSTEIN, Dana ,  BHAVE, Sunil A.

    IPC分类号： H03B5/12 ,  H01L21/336 ,  H01L29/78

    CPC分类号： H03B5/30 ,  H01L29/785 ,  H03H9/02259 ,  H03H9/2452 ,  H03H9/2463 ,  H03H2009/02314 ,  H03H2009/02496

    摘要： A resonator body has an inversion gate, an accumulation gate, and a center region. The resonator body also has a source contact coupled to the center region and a drain contact coupled to the center region. The resonator body further has a first dielectric layer coupled between the inversion gate and the center region. The resonator body also has a second dielectric layer coupled between the accumulation gate and the center region. A resonant body transistor is also disclosed. The resonant body transistor has an inversion gate electrode, an accumulation gate electrode, a source electrode, a drain electrode, and a plurality of anchor beams. The resonant body transistor also has a resonator body coupled-to and suspended-from the inversion gate electrode, the accumulation gate electrode, the source electrode, and the drain electrode by the plurality of anchor beams. A resonant body oscillator is also disclosed.

    ELECTROMECHANICAL ELECTRON TRANSFER DEVICES
    2.
    发明公开
    ELECTROMECHANICAL ELECTRON TRANSFER DEVICES 有权
    电子机械电子转运设施

    公开(公告)号：EP1743381A4

    公开(公告)日：2008-04-16

    申请号：EP05724461

    申请日：2005-03-04

    申请人： WISCONSIN ALUMNI RES FOUND

    发明人： SCHEIBLE DOMINIK V ,  BLICK ROBERT H

    IPC分类号： H01L29/76 ,  H01L49/00 ,  H03H9/02 ,  H03H9/24

    CPC分类号： H01L49/00 ,  B82Y10/00 ,  H01L29/7613 ,  H03H9/02259 ,  H03H9/2405 ,  H03H2009/02267 ,  H03H2009/02314 ,  H03H2009/02496

    摘要： An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrated circuit manufacturing processes. The device includes a substrate having a horizontal extent and a pillar on the substrate extending from the substrate vertically with respect to the horizontal extent of the substrate. The pillar is formed to vibrate laterally with respect to the vertical length of the pillar at a resonant frequency which can be several hundred MHz. Drain and source electrodes extend from the substrate vertically with respect to the horizontal extent of the substrate, and have innermost ends on opposite sides of the pillar. The pillar is free to vibrate laterally back and forth between the innermost ends of the drain and source electrodes to transfer charge between the electrodes.

    ELECTROMECHANICAL ELECTRON TRANSFER DEVICES
    3.
    发明公开
    ELECTROMECHANICAL ELECTRON TRANSFER DEVICES 有权
    电子机械电子转运设施

    公开(公告)号：EP1743381A2

    公开(公告)日：2007-01-17

    申请号：EP05724461.8

    申请日：2005-03-04

    申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION

    发明人： SCHEIBLE, Dominik V. ,  BLICK, Robert H.

    IPC分类号： H01L29/76

    CPC分类号： H01L49/00 ,  B82Y10/00 ,  H01L29/7613 ,  H03H9/02259 ,  H03H9/2405 ,  H03H2009/02267 ,  H03H2009/02314 ,  H03H2009/02496

    摘要： An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrated circuit manufacturing processes. The device includes a substrate having a horizontal extent and a pillar on the substrate extending from the substrate vertically with respect to the horizontal extent of the substrate. The pillar is formed to vibrate laterally with respect to the vertical length of the pillar at a resonant frequency which can be several hundred MHz. Drain and source electrodes extend from the substrate vertically with respect to the horizontal extent of the substrate, and have innermost ends on opposite sides of the pillar. The pillar is free to vibrate laterally back and forth between the innermost ends of the drain and source electrodes to transfer charge between the electrodes.

    Résonateur MEMS à transistor et oscillateur comportant un tel résonateur
    4.
    发明公开
    Résonateur MEMS à transistor et oscillateur comportant un tel résonateur 审中-公开
    MEMS谐振器晶体管和电感谐振器谐振器umfassender Oszillator

    公开(公告)号：EP2330738A1

    公开(公告)日：2011-06-08

    申请号：EP09177918.1

    申请日：2009-12-03

    申请人： ETA SA Manufacture Horlogère Suisse

    发明人： Ionescu, Adrian Mihai ,  Grogg, Daniel ,  Ayöz, Suat

    IPC分类号： H03H9/02 ,  H03H9/24

    CPC分类号： H03H9/02259 ,  H03H9/2426 ,  H03H9/2447 ,  H03H9/2473 ,  H03H2009/02314

    摘要： Le résonateur MEMS à transistor comprend :
    - un caisson dans lequel est formé un élément de conduction constitué par une région de source (308), une région de drain (309), et une région semi-conductrice formant un canal reliant la région de source et la région de drain ;
    - une structure vibrante (310) solidaire d'un substrat tout en étant libre de vibrer ;
    - une structure fixe (330) portée par le substrat, un espace (ou gap) étant aménagé entre la structure fixe et la structure vibrante ;

    le caisson étant intégré soit dans la structure vibrante, soit dans la structure fixe (330), de telle façon que le canal s'étende en regard du dit espace, et ledit espace renferme une microstructure (328) en un matériau piézoélectrique prévue pour assurer un couplage électromécanique entre la structure vibrante (310) et le canal de manière à permettre de moduler la conductibilité de l'élément de conduction à la fréquence de vibration de la structure vibrante.

    摘要翻译： 谐振器（300）具有其中形成有导电元件的半导体外壳（330），其中该元件具有形成连接源极和漏极区域（308,309）的沟道的半导电区域。 在振动梁（310）和壳体之间形成间隙。 壳体与梁一体化，使得通道相对于间隙延伸。 间隙包围由压电材料制成的微观结构，以确保光束和通道之间的机电耦合，以调节元件在光束振动频率下的导电性。

    ELECTROMECHANICAL ELECTRON TRANSFER DEVICES
    7.
    发明授权
    ELECTROMECHANICAL ELECTRON TRANSFER DEVICES 有权
    电子机械电子转运设施

    公开(公告)号：EP1743381B1

    公开(公告)日：2009-04-29

    申请号：EP05724461.8

    申请日：2005-03-04

    申请人： WISCONSIN ALUMNI RESEARCH FOUNDATION

    发明人： SCHEIBLE, Dominik V. ,  BLICK, Robert H.

    IPC分类号： H01L29/76

    CPC分类号： H01L49/00 ,  B82Y10/00 ,  H01L29/7613 ,  H03H9/02259 ,  H03H9/2405 ,  H03H2009/02267 ,  H03H2009/02314 ,  H03H2009/02496

    摘要： An electron transfer device is implemented in a structure which is readily capable of achieving charge transfer cycle frequencies in the range of several hundred MHz or more and which can be formed by conventional semiconductor integrated circuit manufacturing processes. The device includes a substrate having a horizontal extent and a pillar on the substrate extending from the substrate vertically with respect to the horizontal extent of the substrate. The pillar is formed to vibrate laterally with respect to the vertical length of the pillar at a resonant frequency which can be several hundred MHz. Drain and source electrodes extend from the substrate vertically with respect to the horizontal extent of the substrate, and have innermost ends on opposite sides of the pillar. The pillar is free to vibrate laterally back and forth between the innermost ends of the drain and source electrodes to transfer charge between the electrodes.