Abstract:
A resist pattern forming method contains, in order: (1) a step of forming a resist film by using a negative chemical-amplification resist composition containing: (A) polymer compound having a repeating unit represented by the specific formula, (B) a phenolic compound being capable of crosslinking the polymer compound (A) by the action of an acid and having two or more benzene rings and four or more alkoxymethyl groups, and (C) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (2) a step of exposing the film, and (4) a step of, after exposure, developing the film by using a developer containing an ester-based solvent having a carbon number of 7 or 8.
Abstract:
PROBLEM TO BE SOLVED: To provide a polymeric compound suitable as a positive resist material giving a resist film that has higher resolution than a conventional positive resist material, has small line edge roughness and a good pattern profile after exposure, and has excellent etching durability and a little amount of outgassing during exposure, and in particular, suitable for a base resin of a chemically amplified positive resist material, and to provide a positive resist material and a pattern forming method using the polymeric compound, and a polymerizable monomer for obtaining the polymeric compound.SOLUTION: A polymerizable monomer is represented by general formula (1) (wherein Rrepresents a methyl group, ethyl group, propyl group, vinyl group or ethynyl group; the circle represents a cyclic bridged cyclic cycloalkyl group having 3 to 12 carbon atoms, which may include a double bond, however, it is not allowed that the circle is a cyclohexyl group and Ris an ethyl group; Rrepresents a hydrogen atom, a 1-4C straight-chain, branched or cyclic alkyl group; and m represents an integer of 1 to 4). The positive resist material shows a high contrast of an alkaline dissolution rate before and after exposure, suppresses swelling in an alkali developing solution, thereby preventing pattern collapse and achieving high resolution, has a good pattern profile and a good condition of edge roughness after exposure, and in particular, suppresses an acid diffusion rate and shows excellent etching durability.
Abstract:
PROBLEM TO BE SOLVED: To provide a photosensitive resin composition having high sensitivity, a low dielectric constant and an excellent exposure margin.SOLUTION: The photosensitive resin composition comprises: (A) a polymer component satisfying at least one of the following conditions (1) and (2); (B) two or more kinds of photoacid generators; and (D) a solvent. The polymer component includes: (1) a polymer having a structural unit (a1) including a residue in which an acid group is protected by an acid decomposable group and a structural unit (a2) having a crosslinking group; or (2) a polymer (a1) having a structural unit including a residue in which an acid group is protected by an acid decomposable group, and a polymer (a2) having a structural unit having a crosslinking group. In (B) the two or more kinds of photoacid generators, at least one is a compound (B-F) that responds to light to generate an acid including fluorine in the molecule, and at least one of the other is a compound excluding (B-F). The (B-F) compound is selected from a triarylsulfonium salt, diaryliodonium salt, oxime sulfonate compound, imide sulfonate compound and diazomethane compound.
Abstract:
A polymeric, phosphorus-containing composition made by heating, in the presence of an initiator, preferably a free radical initiator, and optionally in the presence of one or more comonomers, at least one ethylenically substituted phosphonylated 2,2'-dihydroxyl-1,1'-binaphthalene or at least one ethylenically substituted 2,2'-dihydroxyl-1,1'-biphenylene. These polymers may be combined with a group VIII metal to form catalysts for hydrocyanation, hydroformylation or unsaturated nitrile isomerization.
Abstract:
PROBLEM TO BE SOLVED: To provide an electronic device insulating layer material capable of forming an insulating layer at a low temperature.SOLUTION: The electronic device insulating layer material contains: a polymer compound (A) which contains a repeating unit containing a cyclic ether structure and a repeating unit represented by formula (1) [wherein Rrepresents a hydrogen atom or a methyl group, R represents an organic group releasable by an acid, and R' represents a hydrogen atom or a monovalent organic group having 1-20 carbon atoms.]; and a tungsten(V) alkoxide (B).