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公开(公告)号：JP5656966B2
公开(公告)日：2015-01-21
申请号：JP2012265997
申请日：2012-12-05
Applicant: 独立行政法人科学技術振興機構 , セイコーエプソン株式会社
IPC: H01L29/786 , H01L21/336 , H01L21/368
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2.发明专利薄膜トランジスタの製造方法、アクチュエーターの製造方法及び光学デバイスの製造方法、並びに薄膜トランジスタ及び圧電式インクジェットヘッド 有权一种制造薄膜晶体管的制造方法，和致动器的光学装置和薄膜晶体管和压电喷墨头的制造方法的方法，
公开(公告)号：JP5615894B2
公开(公告)日：2014-10-29
申请号：JP2012280468
申请日：2012-12-25
Applicant: 独立行政法人科学技術振興機構 , セイコーエプソン株式会社
IPC: H01L21/336 , B81C1/00 , H01L21/28 , H01L21/288 , H01L21/8246 , H01L27/105 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/786 , H01L29/788 , H01L29/792 , H01L41/09 , H01L41/18 , H01L41/187
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公开(公告)号：JP5198506B2
公开(公告)日：2013-05-15
申请号：JP2010107764
申请日：2010-05-07
Applicant: 独立行政法人科学技術振興機構 , セイコーエプソン株式会社
IPC: H01L21/336 , B29C59/02 , B41J2/16 , H01L21/027 , H01L21/28 , H01L21/288 , H01L21/316 , H01L21/3205 , H01L21/368 , H01L21/768 , H01L29/786 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/317 , H01L41/333 , H01L41/39
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a functional device which allows manufacture using raw materials and manufacturing energy far less than ever before and having steps less than even before.SOLUTION: A method of manufacturing a functional device includes, in the following order: a first step of preparing a functional liquid material, which is to be heated to be a functional solid material; a second step of applying the functional liquid material on a base material to form a precursor composition layer of the functional solid material; a third step of heating the precursor composition layer at a first temperature falling within a range of 80°C to 200°C to reduce fluidity of the precursor composition layer in advance; a fourth step of embossing the precursor composition layer while heating the precursor composition layer at a second temperature falling within a range of 80°C to 300°C to form an embossed structure on the precursor composition layer; and a fifth step of heating the precursor composition layer at a third temperature which is higher than the second temperature to form a functional solid material layer from the precursor composition layer.
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公开(公告)号：JP5575864B2
公开(公告)日：2014-08-20
申请号：JP2012265998
申请日：2012-12-05
Applicant: 独立行政法人科学技術振興機構 , セイコーエプソン株式会社
IPC: H01L27/105 , B41J2/045 , B41J2/135 , B41J2/14 , B41J2/16 , H01L21/316 , H01L21/8246 , H01L41/09 , H01L41/318 , H01L41/333
Abstract: PROBLEM TO BE SOLVED: To provide a production method of a ferroelectric material layer the electrical characteristics of which can be enhanced furthermore.SOLUTION: The production method of a ferroelectric material layer includes a ferroelectric material precursor layer formation step for forming the precursor layer of a ferroelectric material by coating a substrate with a sol-gel solution, a drying step for drying the precursor layer at a first temperature in the range of 120°C-250°C, a type push step for performing type push processing of the precursor layer while heating to a second temperature higher than the first temperature and in the range of 150°C-300°C, and a ferroelectric material layer formation step for forming the ferroelectric material layer from the precursor layer.
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公开(公告)号：JP5154605B2
公开(公告)日：2013-02-27
申请号：JP2010118857
申请日：2010-05-24
Applicant: 独立行政法人科学技術振興機構 , セイコーエプソン株式会社
IPC: H01L29/786 , B41J2/045 , B41J2/055 , B41J2/135 , B41J2/14 , B41J2/16 , H01L21/316 , H01L21/336 , H01L21/8246 , H01L27/105 , H01L29/788 , H01L29/792 , H01L41/09 , H01L41/187 , H01L41/22 , H01L41/318 , H01L41/333
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a ferroelectric material layer, by which electrical properties of a ferroelectric material layer (e.g. a high residual polarization property and a low leak current property) can be improved further.SOLUTION: The ferroelectric material layer manufacturing method includes a first step for preparing a sol-gel solution which will make ferroelectric material by thermal treatment, a second step for coating a substrate with the sol-gel solution thereby to form a precursor composition layer of the ferroelectric material, a third step for drying the precursor composition layer at a first temperature within a range of 120-250°C, a fourth step for heating the precursor composition layer to a second temperature within a range of 150-300°C, which is higher than the first temperature, and in this condition, performing an impressing work on the precursor composition layer, and a fifth step for performing a heat treatment on the precursor composition layer at a third temperature higher than the second temperature thereby to form a ferroelectric material layer from the precursor composition layer, in this order.
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Patent Agency Ranking
公开(公告)号：JP5154603B2
公开(公告)日：2013-02-27
申请号：JP2010107768
申请日：2010-05-07
Applicant: 独立行政法人科学技術振興機構 , セイコーエプソン株式会社
IPC: H01L21/336 , H01L21/28 , H01L29/423 , H01L29/49 , H01L29/786
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公开(公告)号：JP4355965B2
公开(公告)日：2009-11-04
申请号：JP2007096398
申请日：2007-04-02
Applicant: セイコーエプソン株式会社
CPC classification number: H05K3/185 , C23C18/08 , C23C18/14 , C23C18/1608 , C23C18/1692 , C23C18/1844 , C23C18/2086 , C23C18/30 , C23C18/36 , H05K3/125 , H05K3/243 , H05K3/245 , H05K3/389 , H05K2201/09909 , H05K2203/0113 , H05K2203/013 , H05K2203/1105 , H05K2203/308 , Y10T428/24802
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公开(公告)号：JP4344954B2
公开(公告)日：2009-10-14
申请号：JP2006271808
申请日：2006-10-03
Applicant: セイコーエプソン株式会社
CPC classification number: H05K3/107 , H05K3/045 , H05K3/20 , H05K2203/0108 , H05K2203/072 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49155 , Y10T29/49156 , Y10T29/49165 , Y10T428/26
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公开(公告)号：JP4336996B2
公开(公告)日：2009-09-30
申请号：JP2006271805
申请日：2006-10-03
Applicant: セイコーエプソン株式会社
IPC: C23C18/20 , C23C18/31 , H01L21/288
CPC classification number: H05K3/182 , C23C18/1608 , C23C18/1893 , C23C18/2086 , C23C18/30 , H05K2201/09045 , H05K2201/09981 , H05K2203/0113 , Y10T428/24612 , Y10T428/31678
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