利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

63 条记录 (耗时 0.035 秒)

    Chemically amplified resist composition, and resist film, resist coated mask blank, method for forming resist pattern, and photomask using the composition
    2.
    发明专利
    Chemically amplified resist composition, and resist film, resist coated mask blank, method for forming resist pattern, and photomask using the composition 有权
    化学稳定组合物，耐腐蚀膜，耐蚀涂层掩模，形成耐蚀图案的方法和使用组合物的光刻胶

    公开(公告)号：JP2013205520A

    公开(公告)日：2013-10-07

    申请号：JP2012072540

    申请日：2012-03-27

    申请人： Fujifilm Corp ,  富士フイルム株式会社

    发明人： TSUCHIMURA TOMOTAKA ,  TSURUTA TAKUYA ,  INAZAKI TAKESHI

    IPC分类号： G03F7/004 ,  C07C309/73 ,  C07C309/77 ,  C08F12/24 ,  G03F7/038 ,  G03F7/039 ,  H01L21/027

    摘要： PROBLEM TO BE SOLVED: To provide a chemically amplified resist composition, from which a pattern can be formed having high sensitivity, high resolution (for example, high resolving power, an excellent pattern profile and small line edge roughness (LER)), high stability with time, little production of scum and good dry etching durability, in particular, a chemically amplified resist composition, which shows a good balance between sensitivity and stability with time owing to an ester group included in an acid multiplication agent expressed by general formula (I), and which is excellent in improving sensitivity by generating a carboxylic acid when the acid multiplication agent is decomposed by an acid, and to provide a resist film, a resist coated mask blank, a method for forming a resist pattern and a photomask using the above composition.SOLUTION: The chemically amplified resist composition comprises (A) a compound expressed by general formula (I) and (B) a compound that generates an acid by irradiation with actinic rays or radiation. In general formula (I), Rto Reach represent a hydrogen atom or a substituent, and two or more in Rto Rmay be bonded to form a ring; Rrepresents a substituent; and A represents a monovalent organic group.

    摘要翻译： 要解决的问题：提供一种化学放大型抗蚀剂组合物，可以形成具有高灵敏度，高分辨率（例如高分辨率，优异的图案轮廓和小线边缘粗糙度（LER））的图案，高稳定性 随着时间的流逝，少量的浮渣和良好的干蚀刻耐久性，特别是化学放大型抗蚀剂组合物，由通式（I）表示的酸增殖剂中所含的酯基显示了灵敏度与时间的稳定性之间的良好平衡 ），并且当酸增殖剂被酸分解时，通过产生羧酸提高灵敏度，并且提供抗蚀剂膜，抗蚀剂涂布的掩模板，用于形成抗蚀剂图案的方法和使用 化学放大抗蚀剂组合物包含（A）由通式（I）表示的化合物和（B）产生交联的化合物 id通过光化射线或辐射照射。 在通式（I）中，Rto Reach表示氢原子或取代基，Rto Rmay中的两个或多个键合形成环; R代表取代基; A表示一价有机基团。

    Chemically amplified positive resist composition, and resist film, resist coated mask blank, resist pattern formation method, and photomask using the same
    3.
    发明专利
    Chemically amplified positive resist composition, and resist film, resist coated mask blank, resist pattern formation method, and photomask using the same 审中-公开
    化学放大的正极性组合物，耐蚀膜，耐蚀涂层掩模，耐蚀图案形成方法和使用它的光电子

    公开(公告)号：JP2013182191A

    公开(公告)日：2013-09-12

    申请号：JP2012046854

    申请日：2012-03-02

    申请人： Fujifilm Corp ,  富士フイルム株式会社

    发明人： INAZAKI TAKESHI ,  TSUCHIMURA TOMOTAKA ,  TSURUTA TAKUYA ,  TAKAHASHI KOTARO

    IPC分类号： G03F7/004 ,  C07C309/71 ,  C07C309/73 ,  C07C309/77 ,  C07D217/08 ,  C07D317/24 ,  C08F8/12 ,  C08F20/20 ,  C08F112/14 ,  G03F7/039 ,  H01L21/027

    摘要： PROBLEM TO BE SOLVED: To provide: a chemically amplified positive resist composition which can satisfy high sensitivity, high resolving power, a preferable pattern cross-sectional shape and a preferable roughness property in forming an isolated line pattern; and a resist film, a resist coated mask blank, a resist pattern formation method, and a photomask which use the composition.SOLUTION: Provided is a chemically amplified positive resist composition containing: (A) a compound represented by the specified general formula (1); and (B) a compound having a phenolic hydroxyl group and a group which has a group represented by the specified general formula (2) or (3) substituted for a hydrogen atom of a phenolic hydroxyl group. Also provided are a resist film, a resist coated mask blank, a resist pattern formation method, and a photomask which use the composition. In the specified general formula (1), Z represents a monovalent organic group. In the specified general formulas (2) and (3), Qand Qrepresent an alkyl group or an aryl group.

    摘要翻译： 要解决的问题：提供：在形成隔离线图案时，能够满足高灵敏度，高分辨能力，优选的图案截面形状和优选的粗糙度特性的化学放大型正性抗蚀剂组合物; 以及使用该组合物的抗蚀剂膜，抗蚀剂涂布掩模板，抗蚀剂图案形成方法和光掩模。解决方案：提供一种化学放大正型抗蚀剂组合物，其包含：（A）由特定通式（1）表示的化合物 ）; 和（B）具有酚羟基的化合物和具有由通式（2）或（3）表示的基团取代酚羟基的氢原子的基团。 还提供了使用该组合物的抗蚀剂膜，抗蚀剂涂布的掩模坯料，抗蚀剂图案形成方法和光掩模。 在通式（1）中，Z表示一价有机基团。 在指定的通式（2）和（3）中，Q和Q表示烷基或芳基。