公开(公告)号：KR1020120053967A

公开(公告)日：2012-05-29

申请号：KR1020110120099

申请日：2011-11-17

申请人： 닛토덴코 가부시키가이샤

发明人： 우엔다다이스께 ,  마쯔무라다께시 ,  이노우에고이찌 ,  모리따미끼

IPC分类号： H01L21/301

CPC分类号： H01L25/0657 ,  C09J7/28 ,  C09J2203/326 ,  H01L21/6836 ,  H01L23/552 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/16225 ,  H01L2224/27436 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06537 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/01063 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10T428/28 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： PURPOSE: An adhesive film and a semiconductor device are provided to reducing that electromagnetic waves emitted from one semiconductor device affect the other semiconductor device by including an electromagnetic waves shield layer. CONSTITUTION: A semiconductor device has a semiconductor element and adherent. An adhesive film(40) for the semiconductor device is installed between the adherent and the semiconductor element. The adhesive film for the semiconductor device comprises an adhesive layer(30) and an electromagnetic waves shield layer(31). Attenuation of electromagnetic waves transmitting the adhesive film for the semiconductor device is over 3dB at a part among frequency domains of a range of 50MHz to 20GHz.

摘要翻译： 目的：提供粘合膜和半导体器件，以减少由一个半导体器件发射的电磁波通过包括电磁波屏蔽层而影响另一半导体器件。 构成：半导体器件具有半导体元件和附着物。 用于半导体器件的粘合膜（40）安装在粘附剂和半导体元件之间。 用于半导体器件的粘合膜包括粘合剂层（30）和电磁波屏蔽层（31）。 在50MHz至20GHz范围内的频率域中，传输半导体器件用粘合膜的电磁波的衰减超过3dB。

公开(公告)号：KR101927531B1

公开(公告)日：2018-12-10

申请号：KR1020110120098

申请日：2011-11-17

申请人： 닛토덴코 가부시키가이샤

发明人： 우엔다다이스께 ,  마쯔무라다께시 ,  이노우에고이찌 ,  모리따미끼

IPC分类号： H01L21/78 ,  H01L23/29 ,  C09J7/00

摘要： [과제] 피착체 상에 플립 칩 접속되는 반도체 소자의 이면에 전자파 실드층을 형성할 수 있고, 또한 당해 전자파 실드층을 갖는 반도체 장치를, 생산성을 저하시키지 않고 제조할 수 있다.
[해결 수단] 피착체 상에 플립 칩 접속된 반도체 소자의 이면에 형성하기 위한 플립 칩형 반도체 이면용 필름이며, 접착제층과, 전자파 실드층을 갖는 플립 칩형 반도체 이면용 필름을 제공한다.

公开(公告)号：KR101168561B1

公开(公告)日：2012-07-27

申请号：KR1020120024288

申请日：2012-03-09

申请人： 닛토덴코 가부시키가이샤

发明人： 이노우에고이찌 ,  모리따미끼 ,  시시도유이찌로

IPC分类号： H01L21/301

CPC分类号： H01L21/56 ,  C09J2203/326 ,  H01L21/67132 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2224/83906 ,  H01L2224/85205 ,  H01L2224/9205 ,  H01L2224/92247 ,  H01L2924/00013 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/15747 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/3512 ,  H01L2924/00012

摘要： PURPOSE: A method for manufacturing a film for a semiconductor device is provided to prevent a dicing ring to be polluted when attaching a semiconductor wafer to a die bond film. CONSTITUTION: An adhesive layer(2) laminated on a base material(1) and a dicing film(11) is manufactured. A plurality of die bond films(3) is attached to the dicing film at predetermined intervals. A protection film(14) is attached to the plurality of die bond films of the dicing film. The location of the plurality of die bond films is detected based on light transmittance obtained by radiating light rays of a wavelength of 400nm to 800nm. The dicing film is punched based on the location of the plurality of the die bond films.

摘要翻译： 目的：提供一种用于制造半导体器件用膜的方法，以防止在将半导体晶片附着于芯片接合膜时切割环被污染。 构成：制造层叠在基材（1）和切割膜（11）上的粘合剂层（2）。 多个芯片接合薄膜（3）以预定间隔附接到切割薄膜。 保护膜（14）附接到切割膜的多个芯片接合膜。 基于通过辐射400nm至800nm的波长的光线获得的光透射率来检测多个管芯接合膜的位置。 基于多个芯片接合膜的位置冲切切割膜。

公开(公告)号：KR1020120053966A

公开(公告)日：2012-05-29

申请号：KR1020110120098

申请日：2011-11-17

申请人： 닛토덴코 가부시키가이샤

发明人： 우엔다다이스께 ,  마쯔무라다께시 ,  이노우에고이찌 ,  모리따미끼

IPC分类号： H01L21/78 ,  H01L23/29 ,  C09J7/00

CPC分类号： H01L23/552 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68386 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/831 ,  H01L2224/83862 ,  H01L2924/01019 ,  H01L2924/01037 ,  H01L2924/01055 ,  H01L2924/01079 ,  Y10T428/28 ,  H01L2924/00

摘要： PURPOSE: A film for flip chip type semiconductor rear side and a manufacturing method thereof, and a film for dicing tape integrated semiconductor rear side and a semiconductor device are provide to prevent the damage of a semiconductor element by protecting the rear side of the semiconductor element by using a film for semiconductor rear side. CONSTITUTION: A film for flip chip type semiconductor rear side(40) is formed on the rear side of a semiconductor element which is flip-chip connected to adherent. The film for the flip chip type semiconductor rear side comprises an adhesive layer(30) and an electromagnetic waves shield layer(31). The electromagnetic waves shield layer is formed on the adhesive layer. The film for the flip chip type semiconductor rear side is laminated on a gluing agent layer of a dicing tape. The dicing tape is formed into a structure in which the gluing agent layer is laminated on base materials.

摘要翻译： 目的：一种用于倒装芯片型半导体后侧的薄膜及其制造方法，以及用于切割带集成半导体后侧的膜和半导体器件，用于通过保护半导体元件的后侧来防止半导体元件的损坏 通过使用半导体背面的薄膜。 构成：倒装芯片型半导体后侧（40）的薄膜形成在半导体元件的背面，该半导体元件与贴片连接。 用于倒装芯片型半导体后侧的薄膜包括粘合剂层（30）和电磁波屏蔽层（31）。 电磁波屏蔽层形成在粘合剂层上。 用于倒装芯片型半导体后侧的膜层压在切割带的胶粘剂层上。 切割胶带形成为胶合剂层层压在基材上的结构。

公开(公告)号：KR101190467B1

公开(公告)日：2012-10-11

申请号：KR1020117027458

申请日：2011-08-29

申请人： 닛토덴코 가부시키가이샤

发明人： 아마노야스히로 ,  이노우에고이찌

IPC分类号： H01L21/301

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J2201/622 ,  C09J2203/326 ,  H01L21/67132

摘要： Provided is a film for a semiconductor device, wherein an adhesive film with a dicing sheet, which is an adhesive film laminated on top of a dicing film, is laminated to a cover film at prescribed intervals. Said film for a semiconductor device is capable of suppressing the formation of transfer marks on the adhesive film, when the film for a semiconductor device is wound into a roll. The film for a semiconductor device of the present invention is a film for a semiconductor device wherein the adhesive film with a dicing sheet, which is the adhesive film laminated on top of the dicing film, is laminated to the cover film at prescribed intervals, and said film for a semiconductor device has a Ta/Tb ratio between the cover film thickness (Ta) and the dicing film thickness (Tb) of 0.07-2.5.

公开(公告)号：KR1020120053968A

公开(公告)日：2012-05-29

申请号：KR1020110120102

申请日：2011-11-17

申请人： 닛토덴코 가부시키가이샤

发明人： 우엔다다이스께 ,  마쯔무라다께시 ,  이노우에고이찌 ,  모리따미끼

IPC分类号： H01L21/78 ,  H01L23/29 ,  C09J7/00

CPC分类号： H01L24/27 ,  C09J7/28 ,  C09J2203/326 ,  H01L21/6836 ,  H01L23/3121 ,  H01L23/552 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/68377 ,  H01L2221/68386 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/29 ,  H01L2224/29083 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29386 ,  H01L2224/29393 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/83091 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/83862 ,  H01L2224/85097 ,  H01L2224/85205 ,  H01L2225/0651 ,  H01L2225/06537 ,  H01L2225/06568 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01059 ,  H01L2924/01063 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0665 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10T156/10 ,  Y10T428/2804 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/0532 ,  H01L2924/05432 ,  H01L2924/05032 ,  H01L2924/0503 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： PURPOSE: A die bond film and a manufacturing method thereof and a semiconductor device having the same and a dicing die bond film are provided to block electromagnetic waves by including an electromagnetic waves shield layer. CONSTITUTION: A die bond film(40) comprises an adhesive layer(30) and an electromagnetic waves shield layer(31). The electromagnetic waves shield layer is composed of a metal film. The electromagnetic waves shield layer is formed by evaporation. The electromagnetic waves shield layer is attached to the adhesive layer. The die bond film is laminated on a gluing agent layer of a dicing film. Attenuation of electromagnetic waves transmitting the die bond film is over 3dB at a part among frequency domains of a range of 50MHz to 20GHz.

摘要翻译： 目的：提供一种管芯接合膜及其制造方法以及具有该半导体器件的半导体器件和切割晶片接合膜，以通过包括电磁波屏蔽层来阻挡电磁波。 构成：芯片接合膜（40）包括粘合剂层（30）和电磁波屏蔽层（31）。 电磁波屏蔽层由金属膜构成。 电磁波屏蔽层通过蒸发形成。 电磁波屏蔽层附着在粘合剂层上。 将芯片接合膜层压在切割膜的胶粘剂层上。 在50MHz至20GHz范围的频域中的一部分，导致芯片接合薄膜的电磁波衰减超过3dB。

公开(公告)号：KR1020120034619A

公开(公告)日：2012-04-12

申请号：KR1020117027458

申请日：2011-08-29

申请人： 닛토덴코 가부시키가이샤

发明人： 아마노야스히로 ,  이노우에고이찌

IPC分类号： H01L21/301

CPC分类号： H01L21/6836 ,  C09J7/20 ,  C09J2201/622 ,  C09J2203/326 ,  H01L21/67132

摘要： Provided is a film for a semiconductor device, wherein an adhesive film with a dicing sheet, which is an adhesive film laminated on top of a dicing film, is laminated to a cover film at prescribed intervals. Said film for a semiconductor device is capable of suppressing the formation of transfer marks on the adhesive film, when the film for a semiconductor device is wound into a roll. The film for a semiconductor device of the present invention is a film for a semiconductor device wherein the adhesive film with a dicing sheet, which is the adhesive film laminated on top of the dicing film, is laminated to the cover film at prescribed intervals, and said film for a semiconductor device has a Ta/Tb ratio between the cover film thickness (Ta) and the dicing film thickness (Tb) of 0.07-2.5.