Method for patterning devices
    1.
    发明授权
    Method for patterning devices 有权
    图案形成装置的方法

    公开(公告)号:US06677174B2

    公开(公告)日:2004-01-13

    申请号:US10100866

    申请日:2002-03-19

    IPC分类号: H01L2100

    摘要: The present invention relates to patterning methods for organic devices, and more particularly to patterning methods using a die. A first layer of organic materials is deposited over a substrate, followed by a first electrode layer. A first patterned die having a raised portion is then pressed onto the first electrode layer, such that the raised portion of the first patterned die contacts portions of the first electrode layer. The patterned die is removed, such that the portions of the first electrode layer in contact with the raised portions of the first patterned die are removed. In one embodiment of the invention, a second organic layer is then deposited over the first electrode layer, followed by a second electrode layer. A second patterned die having a raised portion is pressed onto the second electrode layer, such that the raised portion of the second patterned die contacts portions of the second electrode layer. The second patterned die is removed, such that the portions of the second electrode layer in contact with the raised portions of the second patterned die are removed. Preferably the patterned die is coated with an adhesive material such as a metal.

    摘要翻译: 本发明涉及有机器件的图案化方法,更具体地涉及使用模具的图案化方法。 第一层有机材料沉积在衬底上,随后是第一电极层。 然后将具有凸起部分的第一图案的模具压在第一电极层上,使得第一图案化裸片的凸起部分接触第一电极层的部分。 去除图案化的管芯,使得与第一图案化裸片的凸起部分接触的第一电极层的部分被去除。 在本发明的一个实施例中,然后在第一电极层上沉积第二有机层,随后沉积第二电极层。 具有凸起部分的第二图案的模具被压在第二电极层上,使得第二图案化芯片的凸起部分接触第二电极层的部分。 去除第二图案的芯片,使得与第二图案化芯片的凸起部分接触的第二电极层的部分被去除。 优选地,图案化的模具用诸如金属的粘合材料涂覆。

    Method for patterning organic thin film devices using a die
    2.
    发明授权
    Method for patterning organic thin film devices using a die 有权
    使用模具图案化有机薄膜器件的方法

    公开(公告)号:US06468819B1

    公开(公告)日:2002-10-22

    申请号:US09718215

    申请日:2000-11-21

    IPC分类号: H01L2100

    摘要: The present invention relates to patterning methods for organic devices, and more particularly to patterning methods using a die. A first layer of organic materials is deposited over a substrate, followed by a first electrode layer. A first patterned die having a raised portion is then pressed onto the first electrode layer, such that the raised portion of the first patterned die contacts portions of the first electrode layer. The patterned die is removed, such that the portions of the first electrode layer in contact with the raised portions of the first patterned die are removed. In one embodiment of the invention, a second organic layer is then deposited over the first electrode layer, followed by a second electrode layer. A second patterned die having a raised portion is pressed onto the second electrode layer, such that the raised portion of the second patterned die contacts portions of the second electrode layer. The second patterned die is removed, such that the portions of the second electrode layer in contact with the raised portions of the second patterned die are removed. Preferably the patterned die is coated with an adhesive material such as a metal.

    摘要翻译: 本发明涉及有机器件的图案化方法,更具体地涉及使用模具的图案化方法。 第一层有机材料沉积在衬底上,随后是第一电极层。 然后将具有凸起部分的第一图案的模具压在第一电极层上,使得第一图案化裸片的凸起部分接触第一电极层的部分。 去除图案化的管芯,使得与第一图案化裸片的凸起部分接触的第一电极层的部分被去除。 在本发明的一个实施例中,然后在第一电极层上沉积第二有机层,随后沉积第二电极层。 具有凸起部分的第二图案的模具被压在第二电极层上,使得第二图案化芯片的凸起部分接触第二电极层的部分。 去除第二图案的芯片,使得与第二图案化芯片的凸起部分接触的第二电极层的部分被去除。 优选地,图案化的模具用诸如金属的粘合材料涂覆。

    ORGANIC TRIODES WITH NOVEL GRID STRUCTURES AND METHOD OF PRODUCTION
    3.
    发明申请
    ORGANIC TRIODES WITH NOVEL GRID STRUCTURES AND METHOD OF PRODUCTION 有权
    有机结构与新型结构和生产方法

    公开(公告)号:US20090042142A1

    公开(公告)日:2009-02-12

    申请号:US12241382

    申请日:2008-09-30

    IPC分类号: G03F7/00

    摘要: An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer is disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided. In one method, openings are formed in an electrically conductive layer with a patterned die, which is then removed. In another method, an electrically conductive layer and a first insulating layer are etched through the mask to expose portions of a first electrode. In yet another method, a patterned die is pressed into a first organic semiconductor layer to create texture in the surface of the first organic semiconductor layer, and then removed. An electrically conductive material is then deposited onto the first organic semiconductor layer from an angle to form a grid having openings as a result of the textured surface and the angular deposition. In each of the methods, insulating layers are preferably deposited or otherwise formed during the process to completely separate the electrically conductive layer from previously and subsequently deposited organic semiconductor layers.

    摘要翻译: 提供有机半导体器件。 该器件具有第一电极和第二电极,其中有机半导体层设置在第一和第二电极之间。 导电栅格设置在有机半导体层内,其具有存在有机半导体层的开口。 至少一个绝缘层邻近导电栅格设置,优选地使得导电栅格通过绝缘层与有机半导体层完全分离。 还提供了制造器件,特别是导电栅格的方法。 在一种方法中,在带有图案的模具的导电层中形成开口,然后将其去除。 在另一种方法中,通过掩模蚀刻导电层和第一绝缘层以暴露第一电极的部分。 在另一种方法中,图案化的管芯被压入第一有机半导体层以在第一有机半导体层的表面中产生纹理,然后除去。 然后将导电材料从角度沉积到第一有机半导体层上,以形成由于纹理表面和角度沉积而具有开口的栅格。 在每种方法中,优选在该工艺期间沉积或以其它方式形成绝缘层,以使导电层与先前和随后沉积的有机半导体层完全分离。

    Organic triodes with novel grid structures and method of production

    公开(公告)号:US20050196895A1

    公开(公告)日:2005-09-08

    申请号:US11114715

    申请日:2005-04-25

    IPC分类号: H01L27/28 H01L51/40 H01L29/08

    摘要: An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer is disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided. In one method, openings are formed in an electrically conductive layer with a patterned die, which is then removed. In another method, an electrically conductive layer and a first insulating layer are etched through the mask to expose portions of a first electrode. In yet another method, a patterned die is pressed into a first organic semiconductor layer to create texture in the surface of the first organic semiconductor layer, and then removed. An electrically conductive material is then deposited onto the first organic semiconductor layer from an angle to form a grid having openings as a result of the textured surface and the angular deposition. In each of the methods, insulating layers are preferably deposited or otherwise formed during the process to completely separate the electrically conductive layer from previously and subsequently deposited organic semiconductor layers.

    Transfer of patterned metal by cold-welding
    5.
    发明授权
    Transfer of patterned metal by cold-welding 有权
    通过冷焊转移图案金属

    公开(公告)号:US06895667B2

    公开(公告)日:2005-05-24

    申请号:US09833695

    申请日:2001-04-13

    摘要: Methods for patterning a metal over a substrate and devices formed using the methods are disclosed. A patterned die having at least one raised portion and having a metal layer over the die is pressed onto a thin metal film over a substrate, such that the metal layer over the raised portion of the patterned die contacts portions of the thin metal film. Pressure is then applied such that the metal layer and the thin metal film cold-weld to one another. The patterned die is removed, such that the portions of the metal layer cold-welded to the thin metal film break away from the die and remain cold-welded to the thin metal film over the substrate, in substantially the same pattern as the patterned die.

    摘要翻译: 公开了在衬底上图案化金属的方法和使用该方法形成的器件。 具有至少一个凸起部分并且在模具上方具有金属层的图案模具被压在衬底上的薄金属膜上,使得图案化模具的凸起部分上方的金属层接触薄金属膜的部分。 然后施加压力,使得金属层和薄金属膜彼此冷焊。 图案化的模具被去除,使得冷焊到薄金属膜上的金属层的部分远离模具脱落并且保持冷焊接到衬底上的薄金属膜上,与图案化模具基本相同的图案 。

    METHODS OF FABRICATING DEVICES BY LOW PRESSURE COLD WELDING
    6.
    发明申请
    METHODS OF FABRICATING DEVICES BY LOW PRESSURE COLD WELDING 有权
    通过低压冷焊制造设备的方法

    公开(公告)号:US20120295425A1

    公开(公告)日:2012-11-22

    申请号:US13525539

    申请日:2012-06-18

    IPC分类号: H01L21/20

    摘要: Methods of transferring a metal and/or organic layer from a patterned stamp, preferably a soft, elastomeric stamp, to a substrate are provided. The patterned metal or organic layer may be used for example, in a wide range of electronic devices. The present methods are particularly suitable for nanoscale patterning of organic electronic components.

    摘要翻译: 提供了将金属和/或有机层从图案化的印模,优选软的弹性体印模转移到基底的方法。 图案化的金属或有机层可以用于例如广泛的电子器件中。 本发明的方法特别适用于有机电子元件的纳米尺度图案化。

    Method for patterning devices
    7.
    发明授权
    Method for patterning devices 有权
    图案形成装置的方法

    公开(公告)号:US06294398B1

    公开(公告)日:2001-09-25

    申请号:US09447793

    申请日:1999-11-23

    IPC分类号: H01L1200

    摘要: The present invention relates to patterning methods for organic devices, and more particularly to patterning methods using a die. The method includes depositing a first layer of organic materials over a substrate; depositing a second layer of an electrode material over the first layer of organic materials; pressing a patterned die having a raised portion onto the second layer; and removing the patterned die. Preferably the patterned die is coated with a metal. Optionally the method includes depositing additional layers over the substrate prior to pressing the patterned die.

    摘要翻译: 本发明涉及有机器件的图案化方法,更具体地涉及使用模具的图案化方法。 该方法包括在衬底上沉积第一层有机材料; 在所述第一有机材料层上沉积第二层电极材料; 将具有凸起部分的图案化模具压到第二层上; 并去除图案的模具。 优选地,图案化的模具被金属涂覆。 可选地,该方法包括在压制图案化的模具之前在衬底上沉积附加层。

    Methods of fabricating devices by low pressure cold welding
    8.
    发明授权
    Methods of fabricating devices by low pressure cold welding 有权
    低压冷焊制造装置的方法

    公开(公告)号:US08222072B2

    公开(公告)日:2012-07-17

    申请号:US10387925

    申请日:2003-03-13

    IPC分类号: H01L51/40

    摘要: Methods of transferring a metal and/or organic layer from a patterned stamp, preferably a soft, elastomeric stamp, to a substrate are provided. The patterned metal or organic layer may be used for example, in a wide range of electronic devices. The present methods are particularly suitable for nanoscale patterning of organic electronic components.

    摘要翻译: 提供了将金属和/或有机层从图案化的印模,优选软的弹性体印模转移到基底的方法。 图案化的金属或有机层可以用于例如广泛的电子器件中。 本发明的方法特别适用于有机电子元件的纳米尺度图案化。

    Organic triodes with novel grid structures and method of production
    9.
    发明授权
    Organic triodes with novel grid structures and method of production 有权
    具有新型网格结构和生产方法的有机三极管

    公开(公告)号:US07442574B2

    公开(公告)日:2008-10-28

    申请号:US11114715

    申请日:2005-04-25

    IPC分类号: H01L51/40

    摘要: An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer may be disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided.

    摘要翻译: 提供有机半导体器件。 该器件具有第一电极和第二电极,其中有机半导体层设置在第一和第二电极之间。 导电栅格设置在有机半导体层内,其具有存在有机半导体层的开口。 至少一个绝缘层可以布置成与导电栅极相邻,优选地使得导电栅格通过绝缘层与有机半导体层完全分离。 还提供了制造器件,特别是导电栅格的方法。