公开(公告)号：US08227896B2

公开(公告)日：2012-07-24

申请号：US12636588

申请日：2009-12-11

Applicant: Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant ,  Cheng-Han Yang

Inventor： Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant ,  Cheng-Han Yang

IPC: H01L29/00

CPC classification number: G11C11/5685 ,  C23C14/081 ,  C23C14/35 ,  G11C11/5671 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C17/16 ,  G11C17/165 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2213/76 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/165

Abstract: Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100 nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg50O50-xNx layer devices can be varied over a wide range by limiting the current that can be passed during the SET process. Associated data storage devices can be constructed.

Abstract translation: 氮掺杂的MgO绝缘层表现出电压控制的电阻状态，例如高电阻和低电阻状态。 100 nm刻度的图案化纳米器件显示出高度可重现的开关特性。 通过增加氮浓度可以使这些装置在两个电阻水平之间切换的电压水平被系统地降低。 类似地，可以通过改变氮浓度来改变高电阻状态的电阻，并且通过将氮浓度改变几个百分比来降低数量级。 另一方面，低电阻状态的电阻对氮掺杂水平几乎不敏感。 单个Mg50O50-xNx层器件的电阻可以通过限制在SET过程中可以通过的电流在宽范围内变化。 可以构建相关的数据存储设备。

公开(公告)号：US20110140762A1

公开(公告)日：2011-06-16

申请号：US12636588

申请日：2009-12-11

Applicant: Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant ,  Cheng-Han Yang

Inventor： Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant ,  Cheng-Han Yang

IPC: H03K17/00 ,  H01L45/00

CPC classification number: G11C11/5685 ,  C23C14/081 ,  C23C14/35 ,  G11C11/5671 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C17/16 ,  G11C17/165 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2213/76 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/165

Abstract: Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100 nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg50O50-xNx layer devices can be varied over a wide range by limiting the current that can be passed during the SET process. Associated data storage devices can be constructed.

Abstract translation: 氮掺杂的MgO绝缘层表现出电压控制的电阻状态，例如高电阻和低电阻状态。 100 nm刻度的图案化纳米器件显示出高度可重现的开关特性。 通过增加氮浓度可以使这些装置在两个电阻水平之间切换的电压水平被系统地降低。 类似地，可以通过改变氮浓度来改变高电阻状态的电阻，并且通过将氮浓度改变几个百分比来降低数量级。 另一方面，低电阻状态的电阻对氮掺杂水平几乎不敏感。 单个Mg50O50-xNx层器件的电阻可以通过限制在SET过程中可以通过的电流在宽范围内变化。 可以构建相关的数据存储设备。

公开(公告)号：US07915414B2

公开(公告)日：2011-03-29

申请号：US11933855

申请日：2007-11-01

Applicant: Yun Chi ,  Cheng-Han Yang ,  Pi-Tai Chou ,  Chung-Chih Wu ,  Chih-Hao Chang

Inventor： Yun Chi ,  Cheng-Han Yang ,  Pi-Tai Chou ,  Chung-Chih Wu ,  Chih-Hao Chang

IPC: C07F15/00 ,  H01L51/50

CPC classification number: C07F15/0033

Abstract: The present invention discloses organometallic complexes with transition metal elements and their application in fabrication of a variety of light-emitting devices. The mentioned organometallic complexes can serve as emitting material or dopant for blue phosphorescent organic light-emitting devices with excellent performance. The mentioned organometallic complexes have a general formula as the following: Wherein M represents a transition metal element, and Q1 and Q2 respectively represent an atomic group forming a nitrogen-containing heterocyclic ring as a five member ring, a six member ring, or a seven member ring.

Abstract translation: 本发明公开了具有过渡金属元素的有机金属络合物及其在制造各种发光器件中的应用。 所述有机金属配合物可以用作具有优异性能的蓝色磷光有机发光器件的发光材料或掺杂剂。 所述有机金属络合物具有如下通式：其中M表示过渡金属元素，Q1和Q2分别表示形成含氮杂环的原子团，作为五元环，六元环或七元环 会员戒指

公开(公告)号：US20080125591A1

公开(公告)日：2008-05-29

申请号：US11933855

申请日：2007-11-01

Applicant: Yun Chi ,  Cheng-Han Yang ,  Pi-Tai Chou ,  Chung-Chih Wu ,  Chih-Hao Chang

Inventor： Yun Chi ,  Cheng-Han Yang ,  Pi-Tai Chou ,  Chung-Chih Wu ,  Chih-Hao Chang

IPC: C07F19/00

CPC classification number: C07F15/0033

Abstract: The present invention discloses organometallic complexes with transition metal elements and their application in fabrication of a variety of light-emitting devices. The mentioned organometallic complexes can serve as emitting material or dopant for blue phosphorescent organic light-emitting devices with excellent performance. The mentioned organometallic complexes have a general formula as the following: Wherein M represents a transition metal element, and Q1 and Q2 respectively represent an atomic group forming a nitrogen-containing heterocyclic ring as a five member ring, a six member ring, or a seven member ring.

Abstract translation: 本发明公开了具有过渡金属元素的有机金属络合物及其在制造各种发光器件中的应用。 所述有机金属配合物可以用作具有优异性能的蓝色磷光有机发光器件的发光材料或掺杂剂。 所述有机金属络合物具有如下通式：其中M表示过渡金属元素，Q 1和Q 2分别表示形成含氮的原子团 杂环作为五元环，六元环或七元环。

公开(公告)号：US20070166839A1

公开(公告)日：2007-07-19

申请号：US11308831

申请日：2006-05-12

Applicant: Chih-Huang Lai ,  Sheng-Huang Huang ,  Cheng-Han Yang ,  Yung-Hung Wang ,  Wei-Chuan Chen ,  Kuei-Hung Shen

Inventor： Chih-Huang Lai ,  Sheng-Huang Huang ,  Cheng-Han Yang ,  Yung-Hung Wang ,  Wei-Chuan Chen ,  Kuei-Hung Shen

IPC: H01L21/00

CPC classification number: G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F10/3268 ,  H01F41/308 ,  H01L43/12

Abstract: A fabrication method of a magnetoresistance multi-layer is provided. The method includes forming a multi-layer with at least an antiferromagnetic layer and performing an ion irradiation process to the multi-layer to transform a disordered structure of the antiferromagnetic layer to an ordered structure. Accordingly, the process time can be reduced and the interdiffusion in the multi-layer can be prevented.

Abstract translation: 提供了一种磁阻多层的制造方法。 该方法包括形成至少具有反铁磁性层的多层，并对多层进行离子辐射处理，以将反铁磁性层的无序结构转换为有序结构。 因此，可以减少处理时间，并且可以防止多层中的相互扩散。

公开(公告)号：US08582253B1

公开(公告)日：2013-11-12

申请号：US13488219

申请日：2012-06-04

Applicant: Yuankai Zheng ,  Qunwen Leng ,  Mahendra Pakala ,  Zhitao Diao ,  Christian Kaiser ,  Cheng-Han Yang

Inventor： Yuankai Zheng ,  Qunwen Leng ,  Mahendra Pakala ,  Zhitao Diao ,  Christian Kaiser ,  Cheng-Han Yang

IPC: G11B5/39

CPC classification number: G11B5/3967 ,  G01R33/093 ,  G01R33/098 ,  G11B5/1278 ,  G11B5/3906 ,  H01L43/08

Abstract: A magnetic sensor configured to reside in proximity to a recording medium during use having a high spin polarization reference layer stack above AFM layers. The reference layer stack comprises a first boron-free ferromagnetic layer above the AFM coupling layer; a magnetic coupling layer on and in contact with the first boron-free ferromagnetic layer; a second ferromagnetic layer comprising boron deposited on and contact with the magnetic coupling layer; and a boron-free third ferromagnetic layer on and in contact the second ferromagnetic layer. A barrier layer is deposited on and in contact with the boron-free third ferromagnetic layer. In one aspect of the invention, the magnetic coupling layer may comprise at least one of Ta, Ti, or Hf. A process for providing the magnetic sensor is also provided.

Abstract translation: 磁传感器被配置为在使用期间驻留在记录介质附近，在AFM层上方具有高自旋极化参考层堆叠。 参考层堆叠包括在AFM耦合层上方的第一无硼铁磁层; 与第一无硼铁磁层接触并与之接触的磁耦合层; 第二铁磁层，其包含沉积在磁耦合层上并与其接触的硼; 以及在第二铁磁层上并与之接触的无硼第三铁磁层。 阻挡层沉积在无硼第三铁磁层上并与无硼第三铁磁层接触。 在本发明的一个方面，磁耦合层可以包括Ta，Ti或Hf中的至少一种。 还提供了一种用于提供磁传感器的过程。

公开(公告)号：US20120169213A1

公开(公告)日：2012-07-05

申请号：US13381978

申请日：2010-05-05

Applicant: Luisa De Cola ,  David Hartmann ,  Wiebke Sarfert ,  Günter Schmid ,  Sabine Szyszkowski ,  Cheng-Han Yang

Inventor： Luisa De Cola ,  David Hartmann ,  Wiebke Sarfert ,  Günter Schmid ,  Sabine Szyszkowski ,  Cheng-Han Yang

IPC: H05B33/14 ,  C07F15/00 ,  H05B33/20

CPC classification number: C09K11/06 ,  C07F15/0046 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/185 ,  H01L51/0085 ,  H01L51/5016

Abstract: A phosphorescent metal complex may include at least one metallic central atom M; and at least one ligand coordinated by the metallic central atom, wherein one ligand is bidentate with two uncharged coordination sites and comprises at least one carbene unit coordinated directly to the metal atom.

Abstract translation: 磷光金属络合物可以包括至少一个金属中心原子M; 和由金属中心原子配位的至少一个配位体，其中一个配体与两个不带电的配位部位二齿，并且包含至少一个直接与金属原子配位的卡宾单元。

公开(公告)号：US07328152B2

公开(公告)日：2008-02-05

申请号：US10879615

申请日：2004-06-28

Applicant: Cheng-Han Yang ,  Hsueh-Ming Hang

Inventor： Cheng-Han Yang ,  Hsueh-Ming Hang

IPC: G10L19/02

CPC classification number: G10L19/032 ,  G10L19/0017

Abstract: A fast bit allocation algorithm for audio coding is disclosed. A virtual Huffman codebook model is referred in a trellis-based optimization approach to obtain a set of optimized scale factors, and then the set of optimized scale factors is referred in a trellis-based optimization approach to obtain a set of optimized Huffman codebooks. Therefore, the present invention can significantly reduce the amount of computation for the bit allocation. Further, according to the experimental data, the present invention can keep almost the same compression efficiency as the prior art JTB optimization. Hence, the present invention is more suitable for practical applications.

Abstract translation: 公开了用于音频编码的快速位分配算法。 虚拟霍夫曼码本模型在基于网格的优化方法中被引用以获得一组优化的比例因子，然后在基于网格的优化方法中参考优化比例因子的集合以获得一组优化的霍夫曼码本。 因此，本发明可以显着地减少比特分配的计算量。 此外，根据实验数据，本发明可以保持与现有技术的JTB优化几乎相同的压缩效率。 因此，本发明更适用于实际应用。

公开(公告)号：US20050228658A1

公开(公告)日：2005-10-13

申请号：US10879615

申请日：2004-06-28

Applicant: Cheng-Han Yang ,  Hsueh-Ming Hang

Inventor： Cheng-Han Yang ,  Hsueh-Ming Hang

IPC: G10L19/00 ,  G10L19/02 ,  G10L19/08 ,  H03M7/30

CPC classification number: G10L19/032 ,  G10L19/0017

Abstract: A fast bit allocation algorithm for audio coding is disclosed. A virtual Huffman codebook model is referred in a trellis-based optimization approach to obtain a set of optimized scale factors, and then the set of optimized scale factors is referred in a trellis-based optimization approach to obtain a set of optimized Huffman codebooks. Therefore, the present invention can significantly reduce the amount of computation for the bit allocation. Further, according to the experimental data, the present invention can keep almost the same compression efficiency as the prior art JTB optimization. Hence, the present invention is more suitable for practical applications.

Abstract translation: 公开了用于音频编码的快速位分配算法。 虚拟霍夫曼码本模型在基于网格的优化方法中被引用以获得一组优化的比例因子，然后在基于网格的优化方法中参考优化比例因子的集合以获得一组优化的霍夫曼码本。 因此，本发明可以显着地减少比特分配的计算量。 此外，根据实验数据，本发明可以保持与现有技术的JTB优化几乎相同的压缩效率。 因此，本发明更适用于实际应用。

公开(公告)号：US08493693B1

公开(公告)日：2013-07-23

申请号：US13436694

申请日：2012-03-30

Applicant: Yuankai Zheng ,  Qunwen Leng ,  Mahendra Pakala ,  Cheng-Han Yang

Inventor： Yuankai Zheng ,  Qunwen Leng ,  Mahendra Pakala ,  Cheng-Han Yang

IPC: G11B5/127

CPC classification number: G11B5/3906 ,  G01R33/093 ,  G11B5/3929 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

Abstract: A magnetic sensor is configured to reside in proximity to a recording medium during use. The sensor includes a magnetic top shield and a magnetic bottom shield. A top sensor stack is under the magnetic top shield and includes magnetic sensing layers. A bottom sensor stack is between the magnetic bottom shield and the top sensor stack. The bottom sensor stack includes a magnetic seed stack above the bottom shield, an insertion stack above the magnetic seed stack, and an antiferromagnetic (AFM) layer on and in contact with the insertion stack. A pinned layer is above the AFM layer. An AFM coupling layer is above the pinned layer. In some aspects the insertion stack may include at least one of Ti, Hf, Zr, and Ta. In some aspect, the insertion stack includes a layer of elemental Ti. In other aspects, the insertion stack includes multilayer structures.

Abstract translation: 磁传感器被配置为在使用期间驻留在记录介质附近。 传感器包括磁性顶部屏蔽和磁性底部屏蔽。 顶部传感器堆叠在磁性顶部屏蔽下方，并且包括磁感应层。 底部传感器堆叠位于磁性底部屏蔽和顶部传感器叠层之间。 底部传感器堆叠包括在底部屏蔽物上方的磁性种子​​堆叠，在磁性种子堆叠上方的插入堆叠，以及与插入堆叠接触并与其接触的反铁磁（AFM）层。 被钉扎层位于AFM层之上。 AFM耦合层位于钉扎层之上。 在一些方面，插入叠层可以包括Ti，Hf，Zr和Ta中的至少一种。 在一些方面，插入堆叠包括元素Ti层。 在其他方面，插入堆叠包括多层结构。