公开(公告)号：US06313896B1

公开(公告)日：2001-11-06

申请号：US09387215

申请日：1999-08-31

Applicant: Mahesh Govind Samant ,  Joachim Stöhr

Inventor： Mahesh Govind Samant ,  Joachim Stöhr

IPC: G02F11337

CPC classification number: G02F1/133753 ,  G02F1/13378

Abstract: A method for producing a multi-domain alignment layer, as well as multi-domain alignment layers produced thereby and liquid crystal displays comprising the same, are provided. In the subject method, an alignment layer is produced on an alignment surface by directing an ion beam or ion beams at the surface at an angle not equal to 90°, so that the ions contact the surface at non-normal incidence. The substrate may be rotated or the ion beam(s) re-directed or the ion beam source moved so that the surface may be bombarded from different directions in different regions resulting in multiple alignment layer domains with differing alignment. In an alternative embodiment, two ion beams with different angles of incidence may be directed at the surface simultaneously or sequentially, thereby creating multiple alignment layer domains without need for rotation of the substrate. The resultant multi-domain alignment layers find use in liquid crystal display devices.

Abstract translation: 提供了多畴取向层的制造方法，以及由此制造的多畴取向膜和包括其的液晶显示器。 在本发明方法中，通过以不等于90°的角度引导离子束或离子束在表面处，在对准表面上产生取向层，使得离子以非正常入射接触表面。 衬底可以旋转或者离子束被重新定向或离子束源移动，使得可以在不同区域中从不同方向轰击表面，导致具有不同对准的多个取向层畴。 在替代实施例中，具有不同入射角的两个离子束可以同时或顺序地指向表面，由此产生多个取向层畴，而不需要旋转衬底。 所得的多畴取向层可用于液晶显示装置。

公开(公告)号：US08936293B2

公开(公告)日：2015-01-20

申请号：US13333688

申请日：2011-12-21

Applicant: Christopher O. Lada ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant

Inventor： Christopher O. Lada ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant

IPC: B66F19/00

CPC classification number: H01L21/67742 ,  H01L21/68707

Abstract: A device for use in the semiconductor industry includes a robotic arm whose end effector includes electromagnetic means to hold a substrate carrier. A pushing member can move independently of a flat, spatula-like portion of the device and is configured to exert force against the substrate carrier while the spatula-like portion is retracted from the substrate carrier, after the substrate carrier has been brought to its intended position. In this manner, the position of the substrate carrier is maintained at its intended position as the spatula-like portion is retracted.

Abstract translation: 用于半导体工业的器件包括机器人臂，其末端执行器包括用于保持衬底载体的电磁装置。 推动构件可以独立于装置的平坦的刮铲状部分移动，并且构造成在基板载体已经达到其预期之后，当刮板状部分从基板载体缩回时，向基板载体施加力 位置。 以这种方式，当刮刀状部分缩回时，基板载体的位置保持在其预定位置。

公开(公告)号：US20130164113A1

公开(公告)日：2013-06-27

申请号：US13333688

申请日：2011-12-21

Applicant: CHRISTOPHER O. LADA ,  STUART STEPHEN PAPWORTH PARKIN ,  MAHESH GOVIND SAMANT

Inventor： CHRISTOPHER O. LADA ,  STUART STEPHEN PAPWORTH PARKIN ,  MAHESH GOVIND SAMANT

IPC: H01L21/687

CPC classification number: H01L21/67742 ,  H01L21/68707

Abstract: A device for use in the semiconductor industry includes a robotic arm whose end effector includes electromagnetic means to hold a substrate carrier. A pushing member can move independently of a flat, spatula-like portion of the device and is configured to exert force against the substrate carrier while the spatula-like portion is retracted from the substrate carrier, after the substrate carrier has been brought to its intended position. In this manner, the position of the substrate carrier is maintained at its intended position as the spatula-like portion is retracted.

Abstract translation: 用于半导体工业的器件包括机器人臂，其末端执行器包括用于保持衬底载体的电磁装置。 推动构件可以独立于装置的平坦的刮铲状部分移动，并且构造成在基板载体已经达到其预期之后，当刮板状部分从基板载体缩回时，向基板载体施加力 位置。 以这种方式，当刮刀状部分缩回时，基板载体的位置保持在其预定位置。

公开(公告)号：US20110140762A1

公开(公告)日：2011-06-16

申请号：US12636588

申请日：2009-12-11

Applicant: Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant ,  Cheng-Han Yang

Inventor： Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant ,  Cheng-Han Yang

IPC: H03K17/00 ,  H01L45/00

CPC classification number: G11C11/5685 ,  C23C14/081 ,  C23C14/35 ,  G11C11/5671 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C17/16 ,  G11C17/165 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2213/76 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/165

Abstract: Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100 nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg50O50-xNx layer devices can be varied over a wide range by limiting the current that can be passed during the SET process. Associated data storage devices can be constructed.

Abstract translation: 氮掺杂的MgO绝缘层表现出电压控制的电阻状态，例如高电阻和低电阻状态。 100 nm刻度的图案化纳米器件显示出高度可重现的开关特性。 通过增加氮浓度可以使这些装置在两个电阻水平之间切换的电压水平被系统地降低。 类似地，可以通过改变氮浓度来改变高电阻状态的电阻，并且通过将氮浓度改变几个百分比来降低数量级。 另一方面，低电阻状态的电阻对氮掺杂水平几乎不敏感。 单个Mg50O50-xNx层器件的电阻可以通过限制在SET过程中可以通过的电流在宽范围内变化。 可以构建相关的数据存储设备。

公开(公告)号：US06519018B1

公开(公告)日：2003-02-11

申请号：US09185324

申请日：1998-11-03

Applicant: Mahesh Govind Samant ,  Joachim Stöhr

Inventor： Mahesh Govind Samant ,  Joachim Stöhr

IPC: G02F11337

CPC classification number: G02F1/133753 ,  G02F1/133707 ,  G02F2001/133761 ,  G02F2001/133776

Abstract: Homeotropic liquid crystal displays, and methods for their production and use, are provided. The alignment layers of the subject displays have at least one alignment structure rising from a planar substrate. At least a portion of the wall has a bond anisotropy sufficient to align liquid crystal molecules substantially vertical to the planar substrate of the alignment layer. The subject displays find use in a variety of different applications, including in monitors for use in laptop computers, desktop computers, televisions, and the like.

Abstract translation: 提供垂直液晶显示器及其制造和使用方法。 被检体显示器的取向层具有从平面基板上升起的至少一个取向结构。 壁的至少一部分具有足以使基本上垂直于取向层的平面基底垂直的液晶分子的键各向异性。 主题显示可用于各种不同的应用，包括用于膝上型计算机，台式计算机，电视机等的显示器。

公开(公告)号：US06485614B2

公开(公告)日：2002-11-26

申请号：US09727572

申请日：2000-11-30

Applicant: Yoshimine Katoh ,  Yoshiki Nakagawa ,  Shuhichi Odahara ,  Mahesh Govind Samant

Inventor： Yoshimine Katoh ,  Yoshiki Nakagawa ,  Shuhichi Odahara ,  Mahesh Govind Samant

IPC: C07C100

CPC classification number: C23C14/5833 ,  C23C14/0605 ,  C23C14/584 ,  G02F1/13378

Abstract: A method for improving the anchoring of liquid crystals on carbon alignment layers used in liquid crystal displays involves exposing the alignment layer to hydrogen atoms. The atomic hydrogen exposure passivates the surface of the carbon layer to stabilize the anchoring of the subsequently deposited liquid crystals. The substrate on which the carbon layer is supported is located beneath a stretched tungsten filament, and the substrate and filament are located in a vacuum chamber containing hydrogen gas. The heating of the tungsten filament by an appropriate power source dissociates the hydrogen gas into hydrogen atoms and the hydrogen atoms contact the surface of the carbon layer. The process is applicable to stabilize carbon alignment layers that have been formed by directional deposition of carbon, as well as carbon alignment layers where the alignment is caused by a separate ion irradiation step after the carbon layer is formed.

Abstract translation: 用于改善在液晶显示器中使用的碳取向层上的液晶的锚定的方法包括将取向层暴露于氢原子。 原子氢暴露钝化碳层的表面以稳定随后沉积的液晶的锚定。 其上支撑有碳层的基板位于拉伸的钨丝之下，并且基材和长丝位于含有氢气的真空室中。 通过适当的电源对钨丝进行加热将氢气解离成氢原子，氢原子与碳层的表面接触。 该方法适用于稳定通过碳的定向沉积形成的碳取向层，以及在形成碳层之后通过单独的离子照射步骤引起排列的碳取向层。

公开(公告)号：US06326637B1

公开(公告)日：2001-12-04

申请号：US09420213

申请日：1999-10-18

Applicant: Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant

Inventor： Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant

IPC: H01L2906

CPC classification number: H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  H01L43/10

Abstract: An antiferromagnetically exchange-coupled structure for use in various types of magnetic devices, such as magnetic tunnel junctions and spin-valve giant magnetoresistance recording heads, includes an antiferromagnetic layer formed of an alloy of osmium and manganese, wherein the osmium is present in the range of approximately 10 to 30 atomic %. The antiferromagnetic layer is deposited on a non-reactive underlayer, preferably one formed of a noble metal, such as platinum, palladium or alloys thereof. The antiferromagnetic material provides a strong exchange biasing for the ferromagnetic layer that is deposited on the antiferromagnetic layer. Iridium may be added to the osmium-manganese alloy, wherein the total of osmium and iridium is in the range of the approximately 10 to 30 atomic %, to increase the blocking temperature of the antiferromagnetic material. A template layer of permalloy (nickel-iron alloy) may be formed between the underlayer and the antiferromagnetic layer to improve the growth of the osmium-manganese alloy. The resulting antiferromagnetically exchange-coupled structure exhibits very high thermal stability, i.e., the magnetoresistance of magnetic tunnel junction devices is retained even during relatively high annealing process temperatures. This allows magnetic tunnel junction devices using the structure to be used as memory cells in magnetic random access memory arrays that are formed on substrates with electronic circuitry formed by conventional high-temperature CMOS processes and which require high temperature anneals of the completed memory chips.

Abstract translation: 用于各种磁性装置（例如磁性隧道结和自旋阀巨磁电阻记录头）的反铁磁交换耦合结构包括由锇和锰合金形成的反铁磁层，其中锇存在于该范围内 约10至30原子％。 反铁磁层沉积在非反应性底层上，优选由贵金属形成的铂，钯或其合金形成。 反铁磁材料为沉积在反铁磁层上的铁磁层提供强的交换偏置。 铱可以添加到锇锰合金中，其中锇和铱的总和在大约10至30原子％的范围内，以增加反铁磁性材料的封闭温度。 可以在底层和反铁磁层之间形成坡莫合金（镍 - 铁合金）的模板层，以改善锇锰合金的生长。 所得到的反铁磁交换耦合结构表现出非常高的热稳定性，即即使在相对高的退火工艺温度下，磁性隧道结装置的磁阻仍然保持。 这允许使用该结构的磁隧道结器件用作磁性随机存取存储器阵列中的存储器单元，其形成在具有由常规高温CMOS工艺形成的电子电路的衬底上，并且需要完成的存储器芯片的高温退火。

公开(公告)号：US08227896B2

公开(公告)日：2012-07-24

申请号：US12636588

申请日：2009-12-11

Applicant: Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant ,  Cheng-Han Yang

Inventor： Xin Jiang ,  Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant ,  Cheng-Han Yang

IPC: H01L29/00

CPC classification number: G11C11/5685 ,  C23C14/081 ,  C23C14/35 ,  G11C11/5671 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C17/16 ,  G11C17/165 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2213/76 ,  G11C2213/79 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/165

Abstract: Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100 nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg50O50-xNx layer devices can be varied over a wide range by limiting the current that can be passed during the SET process. Associated data storage devices can be constructed.

Abstract translation: 氮掺杂的MgO绝缘层表现出电压控制的电阻状态，例如高电阻和低电阻状态。 100 nm刻度的图案化纳米器件显示出高度可重现的开关特性。 通过增加氮浓度可以使这些装置在两个电阻水平之间切换的电压水平被系统地降低。 类似地，可以通过改变氮浓度来改变高电阻状态的电阻，并且通过将氮浓度改变几个百分比来降低数量级。 另一方面，低电阻状态的电阻对氮掺杂水平几乎不敏感。 单个Mg50O50-xNx层器件的电阻可以通过限制在SET过程中可以通过的电流在宽范围内变化。 可以构建相关的数据存储设备。

公开(公告)号：US07276384B2

公开(公告)日：2007-10-02

申请号：US11151470

申请日：2005-06-13

Applicant: Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant

Inventor： Stuart Stephen Papworth Parkin ,  Mahesh Govind Samant

IPC: H01L21/00 ,  H01L29/76

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  G11C11/16 ,  H01F10/3204 ,  H01F10/3254 ,  H01F41/307 ,  H01L43/08

Abstract: A magnetic tunnel element that can be used, for example, as part of a read head or a magnetic memory cell, includes a first layer formed from an amorphous material, an amorphous tunnel barrier layer, and an interface layer between the first layer and the tunnel barrier layer. The interface layer is formed from a material that is crystalline when the material is in isolation from both the first layer and the tunnel barrier layer. Alternatively, the thickness of the interface layer is selected so that the interface layer is not crystalline. The first layer is formed from at least one material selected from the group consisting of amorphous ferromagnetic material, amorphous ferromagnetic materials, and amorphous non-magnetic materials. The interface layer is formed from a material selected from the group consisting of a ferromagnetic material and a ferrimagnetic material.

Abstract translation: 可以用作例如读头或磁存储单元的一部分的磁隧道元件包括由非晶材料形成的第一层，无定形隧道势垒层和第一层与第一层之间的界面层 隧道势垒层。 当材料与第一层和隧道势垒层隔离时，界面层由结晶的材料形成。 或者，选择界面层的厚度，使得界面层不是结晶的。 第一层由选自非晶铁磁材料，非晶铁磁材料和非晶非磁性材料中的至少一种材料形成。 界面层由选自铁磁材料和铁磁材料的材料形成。

公开(公告)号：US6020946A

公开(公告)日：2000-02-01

申请号：US28018

申请日：1998-02-23

Applicant: Alessandro Cesare Callegari ,  Praveen Chaudhari ,  James Patrick Doyle ,  James Andrew Lacey ,  Shui-Chin Alan Lien ,  Sampath Purushothaman ,  Mahesh Govind Samant ,  James L. Speidell ,  Joachim Stohr

Inventor： Alessandro Cesare Callegari ,  Praveen Chaudhari ,  James Patrick Doyle ,  James Andrew Lacey ,  Shui-Chin Alan Lien ,  Sampath Purushothaman ,  Mahesh Govind Samant ,  James L. Speidell ,  Joachim Stohr

IPC: G02F1/1337 ,  C07C1/00

CPC classification number: G02F1/13378 ,  G02F1/133734 ,  G02F2001/133765

Abstract: The present invention is a method for forming a liquid-crystal cell of a liquid-crystal display. Initially, a dry processed alignment film is deposited onto a first transparent substrate using a dry processing technique, such as plasma enhanced chemical vapor deposition (PECVD). The dry processed alignment film is then irradiated with a beam of atoms to arrange the atomic structure of the alignment film in at least one desired direction in order to orient the liquid-crystal molecules. Another dry processed alignment film is deposited on a second substrate using a dry processing technique and, likewise, irradiated with a beam of atoms. The first transparent substrate and the second substrate are then sandwiched together with their respective alignment films spaced adjacent to each other. The space between the films is then filled with a liquid-crystal material.

Abstract translation: 本发明是一种形成液晶显示器的液晶元件的方法。 首先，使用诸如等离子体增强化学气相沉积（PECVD）的干法处理技术将干燥处理的取向膜沉积到第一透明基板上。 然后用原子束照射干燥处理的取向膜，以将取向膜的原子结构设置在至少一个所需方向上，以便使液晶分子取向。 使用干法处理技术将另一干燥处理的取向膜沉积在第二基板上，并且同样用原子束照射。 然后将第一透明基板和第二基板夹在一起，并将它们各自的定向膜彼此间隔开。 然后用液晶材料填充膜之间的空间。