摘要:
An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.
摘要:
A light-emitting device including a light-spreading device having a wing-shaped protrusion part, a light-entering surface that includes an uneven surface, and a recess located away from the light-entering surface; an optoelectronic device disposed under the uneven surface and emitting light towards the light-entering surface; and a wavelength-converting material formed on a path along light traveling from the optoelectronic device. The device may additionally include a liquid crystal layer for controlling light flux from the light-spreading device; a color filter layer including a plurality of pixels provided adjacent to the liquid crystal layer. The device may be a liquid crystal display having a backlight module, a liquid crystal layer, and a color filter layer. An ultraviolet unit for emitting ultraviolet light may be disposed in the backlight module. At least one pixel may be filled with a wavelength-converting material that can convert ultraviolet light into green light.
摘要:
A semiconductor light-emitting element assembly, comprising a composite substrate, a circuit layout carrier, a connecting structure, a recess, and a semiconductor light-emitting element, is disclosed. The connecting structure is used for bonding the composite substrate with the circuit layout carrier. The recess is formed by the circuit layout carrier and extends toward the composite substrate. The semiconductor light-emitting element is deposited in the recess and electrically connected to the circuit layout carrier.
摘要:
A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.
摘要:
This invention discloses a wavelength converting material. The wavelength converting material comprises a metal haloaluminate compound phosphor with a chemical formula Mw-pAlyOzXq:Rp, wherein M is at least one element selected from the group of Be, Mg, Ca, Sr, Ba and Zn; X is at least one element selected from the group of F, Cl, Br, and I; R is one or more elements selected from the group of the transition metals and at least one element selected from the lanthanide series. Because the emitting wavelength of the metal haloaluminate compound phosphor is 550˜650 nm which is from the green to the red light spectrum, the white light mixed by the converted light of the metal haloaluminate phosphor and the blue light has better color rendering index. Besides, this invention also discloses the optoelectronic devices comprising the metal haloaluminate compound phosphor.
摘要:
An embodiment of the invention discloses a wavelength converting system capable of emitting a second electromagnetic radiation having a second wavelength in response to a first electromagnetic radiation having a first wavelength, wherein an energy level of the first electromagnetic radiation is higher than that of the second electromagnetic level, and a positive correlation is between the first wavelength and the second wavelength.
摘要:
A tube type light emitting diode light source including a light source generator, a light guide and a diffuser is provided. The light source generator includes LEDs arranging in a line. The light guide has a grooved light incident surface and a grooved light-guiding surface. The grooved light incident surface encompasses the LEDs, and the grooved light-guiding surface is adapted for changing the propagating direction of an incident light. The diffuser covers the light guide.
摘要:
A method for manufacturing a white light source includes steps of providing an ultra-violet light as a radiation source, preparing three kinds of first phosphors each receiving the ultra-violet light and emitting the light of red, green and blue, respectively, and preparing at least one additional second phosphor to modify a spectral property of the light emitted by the three first phosphors in order to improve the brightness and color rendering property of the white light source. Moreover, at least one phosphor with the fluorescent property is used as the above second phosphor powder to obtain a color-changeable light source.
摘要:
A white light-emitting device comprising a blue-violet or blue LED and a phosphor material capable of emitting a yellow-green to orange-yellow light upon excitation by the light emitted by the LED. The light from the LED and the phosphor material are mixed in an appropriate ratio to produce a white light. The phosphor material has a general formula (YxMyCez)Al5O12, where x+y=3, x, y≠0, 0.5>z>0, and M is selected from the group consisting of Tb, Lu, and Yb, with (YxMy)Al5O12 serving as a host and Ce as an activator. By changing the composition of the metal elements in the host, the crystal field is modulated to thereby alter the energy level of the excited state to which the activator is transferred upon irradiation by a specific wavelength of light, leading to the change in the emitting wavelength of the phosphor material.
摘要翻译:一种白色发光装置,其包括蓝紫色或蓝色LED,以及荧光体材料,其在由LED发射的光激发时能够发出黄绿色至橙黄色光。 来自LED和磷光体材料的光以适当的比例混合以产生白光。 荧光体材料具有通式(Y 1),以及C 1至C 5 其中x + y = 3,x,y> 0,0.5> z> 0,并且M选自Tb,Lu和Yb,其中(Y x x) 作为主体的Ce 5 N 12 O 12,Ce作为活化剂。 通过改变主体中的金属元素的组成,晶体场被调制,从而改变在特定波长的光照射时活化剂被转移的激发态的能级,导致发射波长的变化 的荧光体材料。
摘要:
This disclosure discloses a method of making a light-emitting device. The method comprises forming a plurality of light-emitting chips, each of the light-emitting chips comprising an epitaxial structure and an electrode formed on the epitaxial structure; forming a protection layer on the electrode in each of the light-emitting chips; forming a plurality of light-emitting groups by collecting the light-emitting chips, wherein each of the light-emitting groups having substantially the same opto-electrical characteristics; forming a wavelength converted layer in each of the light-emitting groups to cover the epitaxial structure and the protection layer; and removing the wavelength converted layer on the protection layer to expose the protection layer.