公开(公告)号：US06177349B1

公开(公告)日：2001-01-23

申请号：US09206169

申请日：1998-12-07

申请人： Diana M. Schonauer ,  Steven C. Avanzino ,  Kai Yang

发明人： Diana M. Schonauer ,  Steven C. Avanzino ,  Kai Yang

IPC分类号： H01L2144

CPC分类号： H01L21/7684 ,  H01L21/76819

摘要： The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by immersion in and/or double sided brush scrubbing with a chemical agent. Embodiments include removing controlled portions up to 50 Å of silicon oxide by immersion in and/or double sided brush scrubbing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, a surfactant and dionized water.

摘要翻译： 从Cu或Cu合金线发射到边界开放介质场中的枝晶的形成和/或生长通过从介电场中化学去除表面的一部分和CMP之后的线之间的浸入和/ 或用化学试剂双面刷洗。 实施例包括通过用含有氟化铵，柠檬酸氢铵，柠檬酸三铵，表面活性剂和二价离子水的溶液浸渍和/或双面刷洗来去除高达50埃的氧化硅的受控部分。

公开(公告)号：US6153933A

公开(公告)日：2000-11-28

申请号：US925821

申请日：1997-09-05

申请人： Darin A. Chan ,  Steven C. Avanzino ,  Subramanian Venkatkrishnan ,  Minh Van Ngo ,  Christy Mei-Chu Woo de la Girond'arc ,  Diana M. Schonauer

发明人： Darin A. Chan ,  Steven C. Avanzino ,  Subramanian Venkatkrishnan ,  Minh Van Ngo ,  Christy Mei-Chu Woo de la Girond'arc ,  Diana M. Schonauer

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76819 ,  H01L23/5329 ,  H01L2924/0002

摘要： A multiple-layer interconnect structure in an integrated circuit, is formed using damascene techniques. A first layer interconnect has a first dielectric layer through which at least one first layer conductor extends. A second layer interconnect is then formed on the first layer interconnect. The second layer interconnect also includes a second layer dielectric through which at least one second layer conductor extends. However, the second layer interconnect is created by first forming a thick second later dielectric layer and then reducing the thickness of the second layer dielectric prior to a patterning step. As a result topographical irregularities that may have carried over to the second layer interconnect from the first layer interconnect are removed by providing a substantially planar surface on the second layer dielectric.

摘要翻译： 使用镶嵌技术形成集成电路中的多层互连结构。 第一层互连具有第一介电层，至少一个第一层导体通过第一介电层延伸。 然后在第一层互连上形成第二层互连。 第二层互连还包括第二层电介质，至少一层第二层导体延伸穿过第二层电介质。 然而，第二层互连通过首先形成厚的第二次介质层，然后在图案化步骤之前减小第二层电介质的厚度而产生。 因此，可以通过在第二层电介质上提供基本平坦的表面来去除可能已经承载到来自第一层互连的第二层互连的拓扑不规则。

公开(公告)号：US5702563A

公开(公告)日：1997-12-30

申请号：US477699

申请日：1995-06-07

申请人： Isidore Salugsugan ,  Diana M. Schonauer

发明人： Isidore Salugsugan ,  Diana M. Schonauer

IPC分类号： H01L21/304 ,  H01L21/3105 ,  H01L21/321

CPC分类号： H01L21/3212 ,  H01L21/31053

摘要： Particulate contamination of a semiconductor wafer subjected to chemical-mechanical polishing is reduced by applying a high pressure water spray to the polishing pad during conditioning.

摘要翻译： 经过化学机械抛光的半导体晶片的微粒污染通过在调理期间对抛光垫施加高压水喷雾而降低。

公开(公告)号：US06596637B1

公开(公告)日：2003-07-22

申请号：US09206170

申请日：1998-12-07

申请人： Diana M. Schonauer ,  Steven C. Avanzino ,  Kai Yang

发明人： Diana M. Schonauer ,  Steven C. Avanzino ,  Kai Yang

IPC分类号： H01L2144

CPC分类号： H01L21/31111 ,  H01L21/3212 ,  Y10S438/963

摘要： The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP by immersing the wafer in a bath containing a chemical agent. Embodiments include removing up to 60 Å of silicon oxide by immersing the wafer in an acidic solution, such as a solution of hydrofluoric acid and water.

摘要翻译： 从Cu或Cu合金线发射到边界开放的电介质场中的枝晶的形成和/或生长通过将晶片浸入晶片之后通过化学去除介电场中的一部分表面和CMP之后的线之间而被大大减少 含有化学试剂的浴。 实施例包括通过将晶片浸入酸性溶液（例如氢氟酸和水溶液）中去除多达60埃的氧化硅。

公开(公告)号：US06503418B2

公开(公告)日：2003-01-07

申请号：US09434146

申请日：1999-11-04

申请人： Kashmir S. Sahota ,  Diana M. Schonauer ,  Steven C. Avanzino

发明人： Kashmir S. Sahota ,  Diana M. Schonauer ,  Steven C. Avanzino

IPC分类号： C09K1300

CPC分类号： C09K3/1463

摘要： A Ta barrier slurry for Chemical-Mechanical Polishing (CMP) during copper metallization contains an organic additive which suppresses formation of precipitates and copper staining. The organic additive is chosen from a class of compounds which form multiple strong adsorbant bonds to the surface of silica or copper, which provide a high degree of surface coverage onto the reactive species, thereby occupying potential reaction sites, and which are sized to sterically hinder the collisions between two reactant molecules which result in new bond formation

摘要翻译： 在铜金属化期间用于化学机械抛光（CMP）的Ta阻挡浆料包含抑制沉淀物形成和铜污染的有机添加剂。 有机添加剂选自一类化合物，其形成与二氧化硅或铜的表面的多个强吸附剂键，其在反应性物质上提供高度的表面覆盖度，从而占据潜在的反应位点，并且它们的大小适于空间阻碍 两个反应物分子之间的碰撞导致新的键形成

公开(公告)号：US06433402B1

公开(公告)日：2002-08-13

申请号：US09713314

申请日：2000-11-16

申请人： Christy Mei-Chu Woo ,  Pin-Chin Connie Wang ,  Amit Marathe ,  Diana M. Schonauer

发明人： Christy Mei-Chu Woo ,  Pin-Chin Connie Wang ,  Amit Marathe ,  Diana M. Schonauer

IPC分类号： H01L2900

CPC分类号： H01L21/76849 ,  H01L21/76843 ,  H01L21/76867 ,  H01L21/76877

摘要： Copper or a low resistivity copper alloy is initially deposited to fill relatively narrow openings leaving relatively wider openings unfilled. A copper alloy having improved electromigration resistance with respect to copper is then selectively deposited to fill the relatively wider openings, thereby improving electromigration resistance without increasing narrow line resistance. Embodiments include annealing after filling the relatively narrow openings and before filling the relatively wider openings, thereby reducing void formation in narrow lines.

摘要翻译： 最初沉积铜或低电阻率铜合金以填充相对窄的开口，留下未填充的较宽的开口。 然后选择性地沉积具有相对于铜具有改善的电迁移阻力的铜合金以填充相对较宽的开口，由此在不增加窄线电阻的情况下提高电迁移阻力。 实施例包括在填充相对窄的开口之后并且在填充相对较宽的开口之前的退火，从而减少窄线中的空隙形成。

公开(公告)号：US6162727A

公开(公告)日：2000-12-19

申请号：US199347

申请日：1998-11-25

申请人： Diana M. Schonauer ,  Steven C. Avanzino ,  Kai Yang

发明人： Diana M. Schonauer ,  Steven C. Avanzino ,  Kai Yang

IPC分类号： H01L21/768 ,  H01L21/44

CPC分类号： H01L21/7684 ,  Y10S438/963

摘要： The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP with a solution comprising acetic acid and ammonium fluoride. Embodiments include removing up to 60 .ANG., e.g. about 10 .ANG. to about 30 .ANG., of silicon oxide by immersing the wafer in a solution containing at least about 90 wt. % acetic acid and up to about 10 wt. % ammonium fluoride.

摘要翻译： 通过用包含乙酸的溶液通过化学去除表面的一部分从电介质场和CMP之间的线之间，从Cu或Cu合金线发射到边界开放电介质场中的枝晶的形成和/或生长被抑制或显着减少 酸和氟化铵。 实施例包括移除多达60个ANGSTROM，例如 通过将晶片浸入含有至少约90重量％的溶液的溶液中，约10安瓿至约30安瓿，氧化硅。 ％乙酸和最多约10重量％ ％氟化铵。

公开(公告)号：US6074949A

公开(公告)日：2000-06-13

申请号：US199348

申请日：1998-11-25

申请人： Diana M. Schonauer ,  Steven C. Avanzino ,  Kai Yang

发明人： Diana M. Schonauer ,  Steven C. Avanzino ,  Kai Yang

IPC分类号： H01L21/311 ,  H01L21/00

CPC分类号： H01L21/31111

摘要： The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP. Embodiments include removing up to 20 .ANG. of silicon oxide by buffing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate, a surfactant and de-ionized water.

摘要翻译： 通过从介电场和CMP之后的线之间化学去除一部分表面，可以防止或大大减少从Cu或Cu合金线发射到边界开放电介质场中的枝晶的形成和/或生长。 实施方案包括通过用含有氟化铵，柠檬酸氢铵，柠檬酸三铵，表面活性剂和去离子水的溶液进行抛光来除去多达20个氧化硅的ANGSTROM。

公开(公告)号：US5662769A

公开(公告)日：1997-09-02

申请号：US391812

申请日：1995-02-21

申请人： Diana M. Schonauer ,  Steven C. Avanzino

发明人： Diana M. Schonauer ,  Steven C. Avanzino

IPC分类号： C11D7/08 ,  C11D7/26 ,  C11D7/32 ,  C11D11/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/321 ,  H01L21/00 ,  C09K13/00

CPC分类号： H01L21/3212 ,  C11D11/0047 ,  C11D7/08 ,  C11D7/265 ,  C11D7/3245 ,  H01L21/02074 ,  Y10S438/906

摘要： A process and solution for cleaning Fe contaminants bound to a metallized semiconductor surface after CMP planarization. The solution comprises a PH buffered solution including hydrofluoric acid and a ligand selected from a group consisting of citrates and EDTA.

摘要翻译： CMP平坦化后清理结合金属化半导体表面的Fe污染物的工艺和解决方案。 该溶液包括PH缓冲溶液，其包括氢氟酸和选自柠檬酸盐和EDTA的配体。

公开(公告)号：US06207569B1

公开(公告)日：2001-03-27

申请号：US09206163

申请日：1998-12-07

申请人： Diana M. Schonauer ,  Steven C. Avanzino ,  Kai Yang

发明人： Diana M. Schonauer ,  Steven C. Avanzino ,  Kai Yang

IPC分类号： H01L21302

CPC分类号： H01L21/7684 ,  H01L21/02074 ,  H01L21/3212

摘要： The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and from between the lines after CMP with a solution comprising HF and H2O. Embodiments include removing up to 50 Å of silicon oxide by treating the wafer in a spray acid processor with a solution containing HF and deionized water at a water to acid ratio of about 100:1 to about 250:1.

摘要翻译： 通过用包含HF的溶液通过化学去除表面的一部分从电介质场和CMP之后的线之间，从Cu或Cu合金线发射到边界开放电介质场中的枝晶的形成和/或生长被抑制或显着减少 和H2O。 实施方案包括通过在喷雾酸处理器中用含有HF和去离子水的溶液以大约100:1至大约250:1的水与酸比例处理晶片去除多达50的氧化硅。