公开(公告)号：US20070141813A1

公开(公告)日：2007-06-21

申请号：US11598568

申请日：2006-11-14

Applicant: In-Jae Song

Inventor： In-Jae Song

IPC: H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC classification number: C30B25/02 ,  C30B29/406 ,  H01L21/0203 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661

Abstract: A method of fabricating a plurality of freestanding GaN wafers includes mounting a GaN substrate in a reactor, forming a GaN crystal growth layer on the GaN substrate through crystal growth, performing surface processing of the GaN crystal growth layer to form a GaN porous layer having a predetermined thickness on the GaN crystal growth layer, repeating the forming of the GaN crystal growth layer and the forming of the GaN porous layer a plurality of times to form a stack of alternating GaN crystal growth layers and GaN porous layers on the GaN substrate, and cooling the stack such that the GaN layers self-separate to form the freestanding GaN wafers. The entire process of forming a GaN porous layer and a thick GaN layer is performed in-situ in a single reactor. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN surface processing and growth proceed using an HVPE process gas such that costs are greatly reduced. In particular, since GaN is self-separated from the substrate through cooling, a GaN wafer of good quality without the occurrence of cracks can be produced on a large scale with a high yield.

Abstract translation: 制造多个独立的GaN晶片的方法包括将GaN衬底安装在反应器中，通过晶体生长在GaN衬底上形成GaN晶体生长层，进行GaN晶体生长层的表面处理以形成具有 在GaN晶体生长层上预定的厚度，多次重复形成GaN晶体生长层和形成GaN多孔层，以在GaN衬底上形成交替的GaN晶体生长层和GaN多孔层的堆叠，以及 冷却堆叠，使得GaN层自分离以形成独立的GaN晶片。 在单个反应器中原位进行形成GaN多孔层和厚GaN层的整个过程。 与现有技术相比，该方法非常简单。 以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN表面处理和生长，从而大大降低成本。 特别地，由于GaN是通过冷却从衬底自分离的，所以可以以高产率大规模生产质量好的GaN晶片而不产生裂纹。

公开(公告)号：US07192873B1

公开(公告)日：2007-03-20

申请号：US11240473

申请日：2005-10-03

Applicant: Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-Iyong Choi

Inventor： Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-Iyong Choi

IPC: H01L21/311

CPC classification number: H01L21/8238 ,  H01L21/3212 ,  H01L33/08 ,  H01L33/24 ,  Y10S977/755 ,  Y10S977/758 ,  Y10S977/773

Abstract: Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.

Abstract translation: 提供了一种使用纳米级P-N结器件或使用纳米颗粒的CMOS而不使用掩模或精细图案的纳米级半导体器件的制造方法。 该方法包括在半导体衬底上均匀分散多个纳米颗粒，形成覆盖半导体衬底上的纳米颗粒的绝缘层，部分去除纳米颗粒和绝缘层的上表面，从绝缘体中选择性地除去纳米颗粒 层，并且通过部分地通过去除纳米颗粒形成的空间将半导体衬底部分地掺杂在半导体衬底中部分地形成掺杂半导体层。

公开(公告)号：US20110264682A1

公开(公告)日：2011-10-27

申请号：US12674600

申请日：2008-08-29

Applicant: In Jae Song ,  Yu Won Kim ,  Dong Wook Kim

Inventor： In Jae Song ,  Yu Won Kim ,  Dong Wook Kim

IPC: G06F17/30

CPC classification number: H04N5/44513 ,  G06F17/30781 ,  G06F17/30828 ,  H04N5/76 ,  H04N5/783 ,  H04N7/17318 ,  H04N9/8205 ,  H04N21/252 ,  H04N21/466 ,  H04N21/4668 ,  H04N21/4828 ,  H04N21/8405

Abstract: There is provided a system and method for providing a recommendation keyword having a high correlation with the content and reflecting the viewers' interests.A prospective viewer group of the content is generated by a broadcast time and a keyword of a specific broadcast content and a keyword set is generated by selecting keywords having a higher correlation with the content than a threshold value from among search words transmitted by the prospective viewer for a predetermined time period including a time before/after the broadcast time of the content. A keyword for each play time period is extracted from the keyword set by using the number of searches for each keyword therein for each play time period and the recommendation keyword for each play time period is stored, which is synchronized with play time of the content.

Abstract translation: 提供了一种用于提供与内容高度相关性并反映观众的兴趣的推荐关键字的系统和方法。 通过广播时间生成内容的预期观看者组，并且通过从由预期观看者发送的搜索词中选择与内容相关性高于关键词的关键字来生成特定广播内容和关键字集合的关键字 在包括内容的广播时间之前/之后的时间的预定时间段内。 通过对每个播放时间段使用其中的每个关键词的搜索次数，从关键字集合中提取每个播放时间段的关键字，并且存储与播放时间的播放时间同步的每个播放时间段的推荐关键字。

公开(公告)号：US20060226445A1

公开(公告)日：2006-10-12

申请号：US11284107

申请日：2005-11-22

Applicant: In-jae Song ,  Byoung-lyong Choi

Inventor： In-jae Song ,  Byoung-lyong Choi

IPC: H01L29/739 ,  H01L31/00

CPC classification number: H01L31/1804 ,  H01L27/14621 ,  H01L27/14685 ,  H01L27/156 ,  H01L31/02162 ,  H01L31/0236 ,  H01L31/03529 ,  H01L31/1872 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or p-type silicon-based substrate; forming a polysilicon in one or more regions of the surface of the substrate; oxidizing the surface of the substrate where the polysilicon is formed, to form a silicon oxidation layer on the substrate, and forming a microdefect flection pattern at the interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by the oxidation accelerated by oxygen traveling through boundaries of the grains in the polysilicon; exposing the microdefect flection pattern by etching the silicon oxidation layer; and forming a doping region by doping the exposed microdefect flection pattern with a dopant of the opposite type to the substrate.

Abstract translation: 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件以及具有硅光电器件的图像输入和/或输出装置。 该方法包括：制备n型或p型硅基衬底; 在所述衬底的表面的一个或多个区域中形成多晶硅; 氧化形成多晶硅的基板的表面，在基板上形成硅氧化层，在基板与硅氧化层之间的界面处形成微缺陷弯曲图案，其中通过氧化形成微缺陷弯曲图案 通过在多晶硅中的晶粒的边界移动的氧加速; 通过蚀刻硅氧化层暴露微缺陷弯曲图案; 以及通过将与所述衬底相反类型的掺杂剂掺杂所述暴露的微缺陷弯曲图案来形成掺杂区域。

公开(公告)号：US09414006B2

公开(公告)日：2016-08-09

申请号：US12674600

申请日：2008-08-29

Applicant: In Jae Song ,  Yu Won Kim ,  Dong Wook Kim

Inventor： In Jae Song ,  Yu Won Kim ,  Dong Wook Kim

IPC: G06F7/00 ,  G06F17/30 ,  H04N5/445 ,  H04N5/76 ,  H04N5/783 ,  H04N7/173 ,  H04N21/25 ,  H04N21/466 ,  H04N21/482 ,  H04N21/8405 ,  H04N9/82

CPC classification number: H04N5/44513 ,  G06F17/30781 ,  G06F17/30828 ,  H04N5/76 ,  H04N5/783 ,  H04N7/17318 ,  H04N9/8205 ,  H04N21/252 ,  H04N21/466 ,  H04N21/4668 ,  H04N21/4828 ,  H04N21/8405

Abstract: There is provided a system and method for providing a recommendation keyword having a high correlation with the content and reflecting the viewers' interests. A prospective viewer group of the content is generated by a broadcast time and a keyword of a specific broadcast content and a keyword set is generated by selecting keywords having a higher correlation with the content than a threshold value from among search words transmitted by the prospective viewer for a predetermined time period including a time before/after the broadcast time of the content. A keyword for each play time period is extracted from the keyword set by using the number of searches for each keyword therein for each play time period and the recommendation keyword for each play time period is stored, which is synchronized with play time of the content.

Abstract translation: 提供了一种用于提供与内容高度相关性并反映观众的兴趣的推荐关键字的系统和方法。 通过广播时间生成内容的预期观看者组，并且通过从由预期观看者发送的搜索词中选择与内容相关性高于关键词的关键字来生成特定广播内容和关键字集合的关键字 在包括内容的广播时间之前/之后的时间的预定时间段内。 通过对每个播放时间段使用其中的每个关键词的搜索次数，从关键字集合中提取每个播放时间段的关键字，并且存储与播放时间的播放时间同步的每个播放时间段的推荐关键字。

公开(公告)号：US20050145896A1

公开(公告)日：2005-07-07

申请号：US11002812

申请日：2004-12-03

Applicant: In-jae Song ,  Won-joo Kim ,  Sun-ae Seo

Inventor： In-jae Song ,  Won-joo Kim ,  Sun-ae Seo

IPC: H01L21/8247 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8242 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

CPC classification number: H01L29/792 ,  H01L21/28282 ,  H01L29/66833

Abstract: A memory device and a method of fabricating the same are provided. The method includes forming a gate stack on a semiconductor substrate and partially exposing upper end portions of the semiconductor substrate by etching the gate stack to form a gate stack structure, and implanting a dopant into the exposed portions of the semiconductor substrate to form source and drain regions, wherein the gate stack structure is etched such that its width increases from top to bottom. Accordingly, it is possible to manufacture a memory device with high integration, using a simplified manufacture process.

Abstract translation: 提供了一种存储器件及其制造方法。 该方法包括在半导体衬底上形成栅极叠层，并通过蚀刻栅叠层来部分地暴露半导体衬底的上端部分以形成栅叠层结构，并将掺杂剂注入半导体衬底的暴露部分以形成源极和漏极 区域，其中蚀刻栅极堆叠结构，使得其宽度从顶部向底部增加。 因此，可以使用简化的制造工艺来制造具有高集成度的存储器件。

公开(公告)号：US07998272B2

公开(公告)日：2011-08-16

申请号：US11598568

申请日：2006-11-14

Applicant: In-Jae Song

Inventor： In-Jae Song

IPC: C30B29/06

CPC classification number: C30B25/02 ,  C30B29/406 ,  H01L21/0203 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02661

Abstract: A method of fabricating a plurality of freestanding GaN wafers includes mounting a GaN substrate in a reactor, forming a GaN crystal growth layer on the GaN substrate through crystal growth, performing surface processing of the GaN crystal growth layer to form a GaN porous layer having a predetermined thickness on the GaN crystal growth layer, repeating the forming of the GaN crystal growth layer and the forming of the GaN porous layer a plurality of times to form a stack of alternating GaN crystal growth layers and GaN porous layers on the GaN substrate, and cooling the stack such that the GaN layers self-separate to form the freestanding GaN wafers. The entire process of forming a GaN porous layer and a thick GaN layer is performed in-situ in a single reactor. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN surface processing and growth proceed using an HVPE process gas such that costs are greatly reduced. In particular, since GaN is self-separated from the substrate through cooling, a GaN wafer of good quality without the occurrence of cracks can be produced on a large scale with a high yield.

Abstract translation: 制造多个独立的GaN晶片的方法包括将GaN衬底安装在反应器中，通过晶体生长在GaN衬底上形成GaN晶体生长层，进行GaN晶体生长层的表面处理以形成具有 在GaN晶体生长层上预定的厚度，多次重复形成GaN晶体生长层和形成GaN多孔层，以在GaN衬底上形成交替的GaN晶体生长层和GaN多孔层的堆叠，以及 冷却堆叠，使得GaN层自分离以形成独立的GaN晶片。 在单个反应器中原位进行形成GaN多孔层和厚GaN层的整个过程。 与现有技术相比，该方法非常简单。 以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN表面处理和生长，从而大大降低成本。 特别地，由于GaN是通过冷却从衬底自分离的，所以可以以高产率大规模生产质量好的GaN晶片而不产生裂纹。

公开(公告)号：US07670862B2

公开(公告)日：2010-03-02

申请号：US11284107

申请日：2005-11-22

Applicant: In-jae Song ,  Byoung-Iyong Choi

Inventor： In-jae Song ,  Byoung-Iyong Choi

IPC: H01L21/00

CPC classification number: H01L31/1804 ,  H01L27/14621 ,  H01L27/14685 ,  H01L27/156 ,  H01L31/02162 ,  H01L31/0236 ,  H01L31/03529 ,  H01L31/1872 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or p-type silicon-based substrate; forming a polysilicon in one or more regions of the surface of the substrate; oxidizing the surface of the substrate where the polysilicon is formed, to form a silicon oxidation layer on the substrate, and forming a microdefect flection pattern at the interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by the oxidation accelerated by oxygen traveling through boundaries of the grains in the polysilicon; exposing the microdefect flection pattern by etching the silicon oxidation layer; and forming a doping region by doping the exposed microdefect flection pattern with a dopant of the opposite type to the substrate.

Abstract translation: 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件以及具有硅光电器件的图像输入和/或输出装置。 该方法包括：制备n型或p型硅基衬底; 在所述衬底的表面的一个或多个区域中形成多晶硅; 氧化形成多晶硅的基板的表面，在基板上形成硅氧化层，在基板与硅氧化层之间的界面处形成微缺陷弯曲图案，其中通过氧化形成微缺陷弯曲图案 通过在多晶硅中的晶粒的边界移动的氧加速; 通过蚀刻硅氧化层暴露微缺陷弯曲图案; 以及通过将与所述衬底相反类型的掺杂剂掺杂所述暴露的微缺陷弯曲图案来形成掺杂区域。

公开(公告)号：US07462893B2

公开(公告)日：2008-12-09

申请号：US11545520

申请日：2006-10-11

Applicant: Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

Inventor： Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

IPC: H01L31/071 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02658

Abstract: A method of fabricating a thick gallium nitride (GaN) layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCI and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.

Abstract translation: 制造厚氮化镓（GaN）层的方法包括通过在HCl和NH 3气体气氛中的反应室中蚀刻GaN衬底来形成厚度为10-1000nm的多孔GaN层，并形成原位GaN生长 在反应室中。 在单个室中原位形成多孔GaN层和厚GaN层的方法。 与现有技术相比，该方法非常简单。 以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN蚀刻和生长，使得成本大大降低。

公开(公告)号：US20070092980A1

公开(公告)日：2007-04-26

申请号：US11545520

申请日：2006-10-11

Applicant: Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

Inventor： Jai-yong Han ,  Jun-sung Choi ,  In-jae Song

IPC: H01L21/00

CPC classification number: C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02658

Abstract: A method of fabricating a thick GaN layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCl and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.

Abstract translation: 制造厚GaN层的方法包括通过在HCl和NH 3气体气氛中在反应室中蚀刻GaN衬底来形成厚度为10-1000nm的多孔GaN层，并形成 在反应室中生长层。 在单个室中原位形成多孔GaN层和厚GaN层的方法。 与现有技术相比，该方法非常简单。 以这种方式，整个工艺在一个室中进行，特别是使用HVPE工艺气体进行GaN蚀刻和生长，使得成本大大降低。