公开(公告)号：US07670862B2

公开(公告)日：2010-03-02

申请号：US11284107

申请日：2005-11-22

Applicant: In-jae Song ,  Byoung-Iyong Choi

Inventor： In-jae Song ,  Byoung-Iyong Choi

IPC: H01L21/00

CPC classification number: H01L31/1804 ,  H01L27/14621 ,  H01L27/14685 ,  H01L27/156 ,  H01L31/02162 ,  H01L31/0236 ,  H01L31/03529 ,  H01L31/1872 ,  H01L33/18 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or p-type silicon-based substrate; forming a polysilicon in one or more regions of the surface of the substrate; oxidizing the surface of the substrate where the polysilicon is formed, to form a silicon oxidation layer on the substrate, and forming a microdefect flection pattern at the interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by the oxidation accelerated by oxygen traveling through boundaries of the grains in the polysilicon; exposing the microdefect flection pattern by etching the silicon oxidation layer; and forming a doping region by doping the exposed microdefect flection pattern with a dopant of the opposite type to the substrate.

Abstract translation: 提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件以及具有硅光电器件的图像输入和/或输出装置。 该方法包括：制备n型或p型硅基衬底; 在所述衬底的表面的一个或多个区域中形成多晶硅; 氧化形成多晶硅的基板的表面，在基板上形成硅氧化层，在基板与硅氧化层之间的界面处形成微缺陷弯曲图案，其中通过氧化形成微缺陷弯曲图案 通过在多晶硅中的晶粒的边界移动的氧加速; 通过蚀刻硅氧化层暴露微缺陷弯曲图案; 以及通过将与所述衬底相反类型的掺杂剂掺杂所述暴露的微缺陷弯曲图案来形成掺杂区域。

公开(公告)号：US07192873B1

公开(公告)日：2007-03-20

申请号：US11240473

申请日：2005-10-03

Applicant: Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-Iyong Choi

Inventor： Hoon Kim ,  In-jae Song ,  Won-joo Kim ,  Byoung-Iyong Choi

IPC: H01L21/311

CPC classification number: H01L21/8238 ,  H01L21/3212 ,  H01L33/08 ,  H01L33/24 ,  Y10S977/755 ,  Y10S977/758 ,  Y10S977/773

Abstract: Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.

Abstract translation: 提供了一种使用纳米级P-N结器件或使用纳米颗粒的CMOS而不使用掩模或精细图案的纳米级半导体器件的制造方法。 该方法包括在半导体衬底上均匀分散多个纳米颗粒，形成覆盖半导体衬底上的纳米颗粒的绝缘层，部分去除纳米颗粒和绝缘层的上表面，从绝缘体中选择性地除去纳米颗粒 层，并且通过部分地通过去除纳米颗粒形成的空间将半导体衬底部分地掺杂在半导体衬底中部分地形成掺杂半导体层。

公开(公告)号：US08927414B2

公开(公告)日：2015-01-06

申请号：US13470487

申请日：2012-05-14

Applicant: Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

Inventor： Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

IPC: H01L21/4763 ,  H01L23/52

CPC classification number: H01L29/1606 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  H01L21/02164 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/0673 ,  H01L29/66045 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/785 ,  H01L29/78684 ,  H01L29/78696

Abstract: A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.

公开(公告)号：US09230801B2

公开(公告)日：2016-01-05

申请号：US13229183

申请日：2011-09-09

Applicant: Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

Inventor： Byoung-Iyong Choi ,  Eun-kyung Lee ,  Dong-mok Whang

IPC: B32B9/00 ,  H01L21/02 ,  C01B31/04

CPC classification number: H01L21/02381 ,  C01B32/182 ,  H01L21/02428 ,  H01L21/02444 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02527 ,  H01L21/0259 ,  H01L21/02606 ,  H01L21/02664 ,  Y10T428/13 ,  Y10T428/24273 ,  Y10T428/24479 ,  Y10T428/30

Abstract: A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.

Abstract translation: 石墨烯结构及其形成方法可以包括以三维（3D）形状形成的石墨烯，例如柱状，堆叠结构和三维连接的结构。 可以使用Ge形成石墨烯结构。

公开(公告)号：US08679976B2

公开(公告)日：2014-03-25

申请号：US12976874

申请日：2010-12-22

Applicant: Eun-kyung Lee ,  Byoung-Iyong Choi ,  Dong-mok Whang ,  Jae-hyun Lee

Inventor： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Dong-mok Whang ,  Jae-hyun Lee

IPC: H01L21/44

CPC classification number: H01L21/02527 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/186 ,  C01B2204/04 ,  C23C16/0272 ,  C23C16/26 ,  C30B25/02 ,  C30B29/08 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/0262

Abstract: A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.

Abstract translation: 制造石墨烯的方法包括在基板的表面上形成锗层，并且通过将含碳气体供给到其中设置基板的室中，直接在锗层上形成石墨烯。

公开(公告)号：US20060227837A1

公开(公告)日：2006-10-12

申请号：US11285176

申请日：2005-11-23

Applicant: Eun-kyung Lee ,  Byoung-Iyong Choi

Inventor： Eun-kyung Lee ,  Byoung-Iyong Choi

IPC: H01S5/00

CPC classification number: B82Y20/00 ,  H01S5/026 ,  H01S5/041 ,  H01S5/18 ,  H01S5/34

Abstract: A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL.

Abstract translation: 提供量子点垂直容量表面发射激光器（QD-VCSEL）及其制造方法。 QD-VCSEL包括基板，形成在基板上的下分布式布拉格反射镜（DBR）反射镜，形成在下DBR反射镜上的电子传输层（ETL），由纳米颗粒型II组形成的发射层（EML） -VI化合物半导体量子点，在EML上形成的空穴传输层（HTL）和形成在HTL上的上DBR反射镜。

公开(公告)号：US20060212975A1

公开(公告)日：2006-09-21

申请号：US11369859

申请日：2006-03-08

Applicant: Byoung-Iyong Choi ,  Eun-kyung Lee

Inventor： Byoung-Iyong Choi ,  Eun-kyung Lee

IPC: H01L51/40

CPC classification number: B82Y30/00 ,  C30B11/12 ,  C30B29/605 ,  Y10S977/721 ,  Y10S977/762 ,  Y10S977/768 ,  Y10S977/789 ,  Y10S977/81 ,  Y10S977/938

Abstract: Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.

Abstract translation: 提供纳米线及其制造方法。 该方法包括形成具有多个微腔的微槽，微槽在硅衬底的表面上形成规则图案; 通过沉积作为催化剂的材料在硅衬底上形成纳米线，在硅衬底上形成金属层; 通过加热金属层以形成催化剂，将硅衬底表面上的微槽内的金属层凝集成形成催化剂; 并使用热处理在催化剂和硅衬底之间生长纳米线。

公开(公告)号：US08353613B2

公开(公告)日：2013-01-15

申请号：US12687290

申请日：2010-01-14

Applicant: Byoung-Iyong Choi ,  Hong-seok Lee ,  Jong-min Kim ,  Eun-kyung Lee

Inventor： Byoung-Iyong Choi ,  Hong-seok Lee ,  Jong-min Kim ,  Eun-kyung Lee

IPC: F21V7/04 ,  H01L33/00

CPC classification number: G02B6/0035 ,  G02B6/0038

Abstract: A light guide plate includes a plurality of quantum dots on at least one of a surface of the light guide plate and inside the light guide plate, wherein the plurality of quantum dots emit light having a different wavelength than a light incident thereto.

Abstract translation: 导光板在导光板的表面和导光板的至少一个上包括多个量子点，其中多个量子点发射具有与入射到其上的光不同的波长的光。

公开(公告)号：US07750353B2

公开(公告)日：2010-07-06

申请号：US11350751

申请日：2006-02-10

Applicant: Eun-kyung Lee ,  Byoung-Iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

Inventor： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC: H01L21/00

CPC classification number: H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

公开(公告)号：US20060232610A1

公开(公告)日：2006-10-19

申请号：US11404927

申请日：2006-04-17

Applicant: Jin-ho Lee ,  Byoung-Iyong Choi ,  Yong-kweun Mun

Inventor： Jin-ho Lee ,  Byoung-Iyong Choi ,  Yong-kweun Mun

IPC: G09G5/00

CPC classification number: G09G3/02 ,  G06F3/1454 ,  G09G2340/0414 ,  G09G2340/0421 ,  G09G2340/145 ,  G09G2380/02 ,  H04M1/0214 ,  H04M1/0235 ,  H04M1/0272 ,  H04M2250/16 ,  H04N9/3141

Abstract: A display device includes a handset having a display window on which an image is displayed, a projection unit included in the handset and enlarging an image and projecting the enlarged image, and a screen movably installed on the handset and displaying the enlarged and projected image thereon. In the display device, an image that the handset displays is displayed on the screen that is larger than the display window of the handset. Thus, various contents such as Internet search or movie can be viewed through an enlarged screen of a mobile handset with more convenience and sense of liveliness. Furthermore, the display device can enlarge an image and project the enlarged image onto a screen for a long time by using a laser scanning method that exhibits a superior optical efficiency and a low power consumption.

Abstract translation: 显示装置包括具有显示图像的显示窗口的手持机，包括在手机中的放大图像和投影放大图像的投影单元以及可移动地安装在手机上并在其上显示放大和投影图像的屏幕 。 在显示装置中，在屏幕上显示手机显示的图像大于手机的显示窗口。 因此，可以通过移动手机的放大屏幕来观看诸如因特网搜索或电影的各种内容，具有更多的便利性和活泼感。 此外，显示装置可以通过使用表现出优异的光学效率和低功耗的激光扫描方法来放大图像并将放大的图像投影到屏幕上长时间。