摘要:
A switching element drive circuit of the present invention outputs a voltage to the switching element by use of a voltage output unit configured as an amplifier circuit having a voltage amplification factor of 1 to drive the switching element. When the switching element is turned on, a turn-on voltage having a value higher than a threshold voltage of the switching element and lower than a value of a voltage of a power supply of the switching element drive circuit is provided to the voltage output unit. After elapse of a turn-on voltage maintenance period, a voltage provided to the voltage output unit is switched by a voltage switching unit to the voltage of the power supply of the switching element drive circuit.
摘要:
A gate drive circuit includes a turn-on circuit having an upper limiter for receiving a gate drive signal. The upper limiter has an output terminal. The turn-on circuit also has a transistor having a base connected to the output terminal of the upper limiter. In addition, the terminal has a terminal connected to a gate of a power switching device. The upper limiter limits a voltage input to the base of the transistor to not exceed a first predetermined value.
摘要:
A gate drive circuit includes a turn-on side circuit for turning on a gate of a power switching device, the turn-on side circuit including a first turn-on side power supply circuit and a second turn-on side power supply circuit, the first turn-on side power supply circuit including: a first turn-on voltage source for supplying a first turn-on voltage; first turn-on wiring; and a first turn-on switch connected in the first turn-on wiring and controlled by a gate drive signal; and the second turn-on side power supply circuit including: a second turn-on voltage source for supplying a second turn-on voltage applied to the gate of the power switching device to set the power switching device in a steady (on) state; second turn-on wiring; a second turn-on switch connected in the second turn-on wiring; and a turn-on side delay circuit for delaying the gate drive signal and passing it to the second turn-on switch.
摘要:
A semiconductor device includes a switching element outputting from a sense terminal a sense current at a fixed rate relative to a main current flowing in the switching element; a sense resistor connected at a first end to the sense terminal and to ground at a second end; a correction current generating circuit that supplies and extracts a correction current to at the first end of the sense resistor; an overcurrent protective circuit that receives a sense voltage generated when the sense current and the correction current flow through the sense resistor, and outputs a stop signal when the sense voltage is larger than a reference voltage; and a driving circuit that stops driving the switching element when the stop signal is received from the overcurrent protective circuit.
摘要:
An inverter apparatus includes an inverter circuit for driving a load. This inverter circuit has at least a pair of switching elements connected in series in a forward direction between both polarity terminals of a dc supply for supplying power to a load. An inverter drive circuit is employed for driving each switching element of the inverter circuit and has at least one high withstand voltage IC wherein the signal level reference potential is different in the input signal and the output signal. A clamping circuit clamps the potential of the low voltage side reference terminal, to which a potential, that is a reference for operation of the high withstand voltage IC in the inverter drive circuit and is a reference for a signal on the low potential side of the high withstand voltage IC, is applied. The voltage is clamped to the high voltage reference terminal to which is applied a reference potential for the high potential-side signal in the high withstand voltage IC. The inverter apparatus also includes a voltage dividing circuit for voltage dividing a voltage between the low voltage side reference terminal of the high withstand voltage IC in the inverter drive circuit and the negative electrode of the dc supply.
摘要:
A first bypass circuit has first and second nodes. The first load circuit is connected between the first node and a signal input terminal of the second drive circuit. The second load circuit has substantially the same impedance as the first load circuit, and is connected between the second node and the reference potential terminal of the second drive circuit. The first drive circuit has the same reference potential as the input buffer. The second bypass circuit passes a signal of a predetermined frequency or higher between a current path formed between the first load circuit and the signal input terminal of the second drive circuit and a current path formed between the second load circuit and the reference potential terminal of the second drive circuit. The first bypass circuit passes a signal of a predetermined frequency or higher between the first and second nodes.
摘要:
A semiconductor device includes a switching element outputting from a sense terminal a sense current at a fixed rate relative to a main current flowing in the switching element; a sense resistor connected at a first end to the sense terminal and to ground at a second end; a correction current generating circuit that supplies and extracts a correction current to at the first end of the sense resistor; an overcurrent protective circuit that receives a sense voltage generated when the sense current and the correction current flow through the sense resistor, and outputs a stop signal when the sense voltage is larger than a reference voltage; and a driving circuit that stops driving the switching element when the stop signal is received from the overcurrent protective circuit.
摘要:
Low-side switching devices (1A, 1B) and high-side switching devices (2A, 2B) are insulated gate bipolar transistors, to which clamp diodes (3A, 3B, 4A, 4B) are connected in parallel, respectively. Driving circuits and protection circuits have power lines along two paths: a power line (A) connected to a ground line (G) through power by-pass capacitors (14A, 14B); and a power line (B) connected to the ground line (G) through power by-pass capacitors (15A, 15B). Resistors (16A, 16B) are provided on the power line (A) between a power source (13) and the driving circuits, respectively.
摘要:
An inrush current limiting circuit, a power source device, and a power conversion device. The circuit and devices limit an inrush current with high reliability and durability while reducing overall weight and volume of the device even under a high rated power. A switch, a capacitor, and a switching element are connected in series to one another, and the serial circuit formed thereof is connected to the main power source. An inverter is connected to the capacitor. A serial circuit formed of a capacitor and a resistor is connected between a collector and a gate of the switching element. A drive circuit drives a switching element to turn ON when the switch turns ON.
摘要:
A switching element drive circuit of the present invention outputs a voltage to the switching element by use of a voltage output unit configured as an amplifier circuit having a voltage amplification factor of 1 to drive the switching element. When the switching element is turned on, a turn-on voltage having a value higher than a threshold voltage of the switching element and lower than a value of a voltage of a power supply of the switching element drive circuit is provided to the voltage output unit. After elapse of a turn-on voltage maintenance period, a voltage provided to the voltage output unit is switched by a voltage switching unit to the voltage of the power supply of the switching element drive circuit.