摘要:
To prevent malfunction or breakdown due to a surge voltage in a power converter for converting DC into AC or the like so as to supply electric power to a load, not only a control signal is transmitted via a level shift circuit which is provided correspondingly to each of switching semiconductor elements forming a main circuit and shifts a level of a reference potential at its output side so as to follow variations of a reference potential of the switching semiconductor element to the switching semiconductor element, but a DC control power source for supplying electric power to the level shift circuit and a negative pole of the switching semiconductor element are connected to each other through at least one of an inductor and a resistance.
摘要:
An inrush current limiting circuit, a power source device, and a power conversion device. The circuit and devices limit an inrush current with high reliability and durability while reducing overall weight and volume of the device even under a high rated power. A switch, a capacitor, and a switching element are connected in series to one another, and the serial circuit formed thereof is connected to the main power source. An inverter is connected to the capacitor. A serial circuit formed of a capacitor and a resistor is connected between a collector and a gate of the switching element. A drive circuit drives a switching element to turn ON when the switch turns ON.
摘要:
A power conversion device that limits an inrush current while reducing overall weight and volume of the device even under a high rated power. One and the other ends of an initial charging circuit having a DC power source, a switch, and a diode connected in series are connected to an inductive load and a lower potential source line, respectively in a power conversion device. The initial charge controller unit turns ON and OFF one switching element of the power conversion device repeatedly during an initial charging operation prior to the normal operation. As a result, a charging current flowing through the initial charging circuit is supplied to a capacitor through the inductive load repeatedly. After the capacitor is sufficiently charged, the initial charging operation is finished and the normal operation is started.
摘要:
A capacitive element is charged with no excessive flow of current so that a potential to effect the operation of a switching element can be obtained with stability. A capacitor (30) is charged with a circulating current from a load (40). On the charging path, a resistor (21) is provided in series to prevent an excessive flow of the charging current. Between terminals (V.sub.B, V.sub.S) of an upper-arm driving circuit (25) which receive a voltage to effect the operation of an IGBT (34) of an upper arm, the capacitor (30) and the resistor (21) are provided to suppress a decrease in potential (V.sub.B) at the terminal (V.sub.B).
摘要:
A gate drive circuit includes a turn-on side circuit for turning on a gate of a power switching device, the turn-on side circuit including a first turn-on side power supply circuit and a second turn-on side power supply circuit, the first turn-on side power supply circuit including: a first turn-on voltage source for supplying a first turn-on voltage; first turn-on wiring; and a first turn-on switch connected in the first turn-on wiring and controlled by a gate drive signal; and the second turn-on side power supply circuit including: a second turn-on voltage source for supplying a second turn-on voltage applied to the gate of the power switching device to set the power switching device in a steady (on) state; second turn-on wiring; a second turn-on switch connected in the second turn-on wiring; and a turn-on side delay circuit for delaying the gate drive signal and passing it to the second turn-on switch.
摘要:
A switching element drive circuit of the present invention outputs a voltage to the switching element by use of a voltage output unit configured as an amplifier circuit having a voltage amplification factor of 1 to drive the switching element. When the switching element is turned on, a turn-on voltage having a value higher than a threshold voltage of the switching element and lower than a value of a voltage of a power supply of the switching element drive circuit is provided to the voltage output unit. After elapse of a turn-on voltage maintenance period, a voltage provided to the voltage output unit is switched by a voltage switching unit to the voltage of the power supply of the switching element drive circuit.
摘要:
A gate drive circuit includes a turn-on circuit having an upper limiter for receiving a gate drive signal. The upper limiter has an output terminal. The turn-on circuit also has a transistor having a base connected to the output terminal of the upper limiter. In addition, the terminal has a terminal connected to a gate of a power switching device. The upper limiter limits a voltage input to the base of the transistor to not exceed a first predetermined value.
摘要:
A semiconductor device includes a switching element outputting from a sense terminal a sense current at a fixed rate relative to a main current flowing in the switching element; a sense resistor connected at a first end to the sense terminal and to ground at a second end; a correction current generating circuit that supplies and extracts a correction current to at the first end of the sense resistor; an overcurrent protective circuit that receives a sense voltage generated when the sense current and the correction current flow through the sense resistor, and outputs a stop signal when the sense voltage is larger than a reference voltage; and a driving circuit that stops driving the switching element when the stop signal is received from the overcurrent protective circuit.
摘要:
An inverter apparatus includes an inverter circuit for driving a load. This inverter circuit has at least a pair of switching elements connected in series in a forward direction between both polarity terminals of a dc supply for supplying power to a load. An inverter drive circuit is employed for driving each switching element of the inverter circuit and has at least one high withstand voltage IC wherein the signal level reference potential is different in the input signal and the output signal. A clamping circuit clamps the potential of the low voltage side reference terminal, to which a potential, that is a reference for operation of the high withstand voltage IC in the inverter drive circuit and is a reference for a signal on the low potential side of the high withstand voltage IC, is applied. The voltage is clamped to the high voltage reference terminal to which is applied a reference potential for the high potential-side signal in the high withstand voltage IC. The inverter apparatus also includes a voltage dividing circuit for voltage dividing a voltage between the low voltage side reference terminal of the high withstand voltage IC in the inverter drive circuit and the negative electrode of the dc supply.
摘要:
A semiconductor device includes a sense resistor that converts a sense current flowing through a sense terminal of a switching element to a voltage (sense voltage), and an overcurrent protection circuit that performs a protection operation for the switching element when the sense voltage exceeds a threshold. The overcurrent protection circuit can switch the threshold to a first reference voltage, or to a second reference voltage which is lower than the first reference voltage. The overcurrent protection circuit sets the threshold to the second reference voltage at the time of the switching element being in a steady state, and sets the threshold to the first reference voltage during a mirror period immediately after turning-on of the switching element.