摘要:
Various methods and systems measure, determine, or align a position of a laser beam spot relative to a semiconductor substrate having structures on or within the semiconductor substrate to be selectively processed by delivering a processing laser beam to a processing laser beam spot. The various methods and systems utilize those structures themselves to perform the measurement, determination, or alignment.
摘要:
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
摘要:
A method is used in processing structures on or within a semiconductor substrate using N series of laser pulses to obtain a throughput benefit, wherein N≧2. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected structures in N respective distinct rows. The method determines a joint velocity profile for simultaneously moving in the lengthwise direction the N laser beam axes substantially in unison relative to the semiconductor substrate so as to process structures in the N rows with the respective N series of laser pulses, whereby the joint velocity profile is such that the throughput benefit is achieved while ensuring that the joint velocity profile represents feasible velocities for each of the N series of laser pulses and for each of the respective N rows of structures processed with the N series of laser pulses. A semiconductor substrate is designed to have a structure layout that takes advantage of the N-fold processing parallelism provided by the N laser beams.
摘要:
A method and system position a laser beam spot relative to a semiconductor substrate having structures on or within the semiconductor substrate to be selectively processed by delivering a processing laser beam to a processing laser beam spot. The method generates a metrology laser beam and propagates the metrology laser beam along a propagation path to a metrology laser beam spot on or near a structure to be selectively processed. The method detects a reflection of the metrology laser beam from the structure, thereby generating a reflection signal, and determining, based on the reflection signal, a position of the metrology laser beam spot relative to the structure.
摘要:
Various methods and systems measure, determine, or align a position of a laser beam spot relative to a semiconductor substrate having structures on or within the semiconductor substrate to be selectively processed by delivering a processing laser beam to a processing laser beam spot. A metrology laser beam spot is directed to one or more of those structures to be selectively processed (e.g., laser-severable conductive links), and reflections of the metrology laser beam off of those structures to be selectively processed are detected to perform the measurement, determination, or alignment. The processing laser beam can then be accurately directed onto those structures to process them on a selective basis. The various methods and systems thus utilize those structures themselves—rather than relying exclusively on dedicated alignment markers—to perform the measurement, determination, or alignment.
摘要:
Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.
摘要:
Systems and methods process structures on or within a semiconductor substrate using a series of laser pulses. In one embodiment, a deflector is configured to selectively deflect the laser pulses within a processing window. The processing window is scanned over the semiconductor substrate such that a plurality of laterally spaced rows of structures simultaneously pass through the processing window. As the processing window is scanned, the deflector selectively deflects the series of laser pulses among the laterally spaced rows within the processing window. Thus, multiple rows of structures may be processed in a single scan.
摘要:
Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.
摘要:
Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.
摘要:
Processing a workpiece with a laser includes generating laser pulses at a first pulse repetition frequency. The first pulse repetition frequency provides reference timing for coordination of a beam positioning system and one or more cooperating beam position compensation elements to align beam delivery coordinates relative to the workpiece. The method also includes, at a second pulse repetition frequency that is lower than the first pulse repetition frequency, selectively amplifying a subset of the laser pulses. The selection of the laser pulses included in the subset is based on the first pulse repetition frequency and position data received from the beam positioning system. The method further includes adjusting the beam delivery coordinates using the one or more cooperating beam position compensation elements so as to direct the amplified laser pulses to selected targets on the workpiece.