公开(公告)号：US20080224236A1

公开(公告)日：2008-09-18

申请号：US12020815

申请日：2008-01-28

Applicant: Chi Ren ,  Hongyu Yu ,  Siu Hung Daniel Chan ,  Ming-Fu Li ,  Dim-Lee Kwong

Inventor： Chi Ren ,  Hongyu Yu ,  Siu Hung Daniel Chan ,  Ming-Fu Li ,  Dim-Lee Kwong

IPC: H01L29/78 ,  H01L21/28

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/823842

Abstract: A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.

Abstract translation: 一种用于半导体器件的栅电极，所述栅电极包括功函数为约4eV或更小的金属和金属氮化物的混合物。

公开(公告)号：US07389664B1

公开(公告)日：2008-06-24

申请号：US11939737

申请日：2007-11-14

Applicant: Tung-Chen Cheng ,  Tzyy-Ker Sue ,  Chi-Keung Chung ,  Chun-Chieh Wang ,  Hsing-Ta Hsieh ,  Ming-Fu Li

Inventor： Tung-Chen Cheng ,  Tzyy-Ker Sue ,  Chi-Keung Chung ,  Chun-Chieh Wang ,  Hsing-Ta Hsieh ,  Ming-Fu Li

IPC: B21D26/02

CPC classification number: B21D26/14 ,  Y10S72/707

Abstract: An electromagnetic forming device for a sheet of material is provided. The electromagnetic forming device includes a fixing base, a magnetic concentration block, an electromagnetic actuator, and a die. The fixing base has a groove. The magnetic concentration block is disposed in the groove of the fixing base, and has an accommodating space therein, which is in communication with a surface of the magnetic concentration block via a slit. The electromagnetic actuator, used to generate a magnetic field, is disposed in the accommodating space of the magnetic concentration block, but does not contact the magnetic concentration block. The die and the magnetic concentration block are separated by a gap, and a sheet of material can be disposed in the gap. As the magnetic concentration block is a block, eddy currents in the magnetic concentration block are distributed uniformly, so the generated magnetic field is also distributed uniformly, thus exerting a uniform forming force on the sheet of material.

Abstract translation: 提供了一种用于材料片的电磁成形装置。 电磁成形装置包括固定基座，磁性集中块，电磁致动器和模具。 固定底座有凹槽。 磁性浓度块设置在固定基座的槽中，并且其中具有容纳空间，其经由狭缝与磁性浓度块的表面连通。 用于产生磁场的电磁致动器设置在磁性浓度块的容纳空间中，但不接触磁性浓度块。 模具和磁性浓度块由间隙分开，并且一片材料可以设置在间隙中。 由于磁性浓度块为块状，磁性浓度块中的涡流均匀分布，所以产生的磁场也均匀分布，从而在材料片上施加均匀的成形力。

公开(公告)号：US20050205947A1

公开(公告)日：2005-09-22

申请号：US10802563

申请日：2004-03-17

Applicant: Hong Yu ,  Ming-Fu Li ,  Dim-Lee Kwong ,  Lakshmi Bera

Inventor： Hong Yu ,  Ming-Fu Li ,  Dim-Lee Kwong ,  Lakshmi Bera

IPC: H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L29/76 ,  H01L29/78

CPC classification number: H01L29/4908 ,  H01L21/28088 ,  H01L21/823828 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/7833

Abstract: This invention relates to a semiconductor device making use of a highly thermal robust metal electrode as gate material. In particular, the development of Hafnium Nitride as a metal gate electrode (or a part of the metal gate stack) is taught and its manufacturing steps of fabrication with different embodiments are shown.

Abstract translation: 本发明涉及利用高度耐热的金属电极作为栅极材料的半导体器件。 特别地，教导了作为金属栅极电极（或金属栅极叠层的一部分）的氮化铪的开发，并且示出了其具有不同实施例的制造的制造步骤。

公开(公告)号：US20090179281A1

公开(公告)日：2009-07-16

申请号：US12322604

申请日：2009-02-04

Applicant: Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chungxiang Zhu ,  Dim-Lee Kwong

Inventor： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chungxiang Zhu ,  Dim-Lee Kwong

IPC: H01L29/78

CPC classification number: H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

Abstract: An N-type Schottky barrier Source/Drain Transistor (N-SSDT) that uses ytterbium silicide (YbSi2-x) for the source and drain is described. The structure includes a suitable capping layer stack.

Abstract translation: 描述了使用镱硅化物（YbSi2-x）作为源极和漏极的N型肖特基势垒源极/漏极晶体管（N-SSDT）。 该结构包括合适的覆盖层堆叠。

公开(公告)号：US07514360B2

公开(公告)日：2009-04-07

申请号：US10802563

申请日：2004-03-17

Applicant: Hong Yu Yu ,  Ming-Fu Li ,  Dim-Lee Kwong ,  Lakshmi Kanta Bera

Inventor： Hong Yu Yu ,  Ming-Fu Li ,  Dim-Lee Kwong ,  Lakshmi Kanta Bera

IPC: H01L21/44

CPC classification number: H01L29/4908 ,  H01L21/28088 ,  H01L21/823828 ,  H01L29/4966 ,  H01L29/51 ,  H01L29/7833

Abstract: This invention relates to a semiconductor device making use of a highly thermal robust metal electrode as gate material. In particular, the development of Hafnium Nitride as a metal gate electrode (or a part of the metal gate stack) is taught and its manufacturing steps of fabrication with different embodiments are shown.

Abstract translation: 本发明涉及利用高度耐热的金属电极作为栅极材料的半导体器件。 特别地，教导了作为金属栅极电极（或金属栅极叠层的一部分）的氮化铪的开发，并且示出了其具有不同实施例的制造的制造步骤。

公开(公告)号：US07504328B2

公开(公告)日：2009-03-17

申请号：US11126031

申请日：2005-05-10

Applicant: Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

Inventor： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

IPC: H01L21/441

CPC classification number: H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Abstract translation: 提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。 为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适​​的覆盖层叠层。

公开(公告)号：US07002175B1

公开(公告)日：2006-02-21

申请号：US10961355

申请日：2004-10-08

Applicant: Jagar Singh ,  Yong Tian Hou ,  Ming Fu Li

Inventor： Jagar Singh ,  Yong Tian Hou ,  Ming Fu Li

IPC: H01L29/06

CPC classification number: H01L29/882 ,  B82Y10/00 ,  H01L29/66219

Abstract: A double barrier resonant tunneling diode (RTD) is formed and integrated with a level of CMOS/BJT/SiGe devices and circuits through processes such as metal-to-metal thermocompressional bonding, anodic bonding, eutectic bonding, plasma bonding, silicon-to-silicon bonding, silicon dioxide bonding, silicon nitride bonding and polymer bonding or plasma bonding. The electrical connections are made using conducting interconnects aligned during the bonding process. The resulting circuitry has a three-dimensional architecture. The tunneling barrier layers of the RTD are formed of high-K dielectric materials such as SiO2, Si3N4, Al2O3, Y2O3, Ta2O5, TiO2, HfO2, Pr2O3, ZrO2, or their alloys and laminates, having higher band-gaps than the material forming the quantum well, which includes Si, Ge or SiGe. The inherently fast operational speed of the RTD, combined with the 3-D integrated architecture that reduces interconnect delays, will produce ultra-fast circuits with low noise characteristics.

Abstract translation: 通过金属对金属热压接合，阳极接合，共晶接合，等离子体接合，硅 - 二极管等工艺，形成双层势垒共振隧道二极管（RTD）并与CMOS / BJT / SiGe器件和电路集成， 硅键合，二氧化硅键合，氮化硅键合和聚合物键合或等离子体键合。 电连接使用在接合过程中对准的导电互连来制成。 所得到的电路具有三维结构。 RTD的隧道势垒层由高K电介质材料形成，例如SiO 2，Si 3 N 4 N 4，Al 2 O 3， 2个O 3，3个O 3，3个O 2，3个O 3， TiO 2，TiO 2，HfO 2，Pr 2 O 3，ZrO 2，N 2， >或其合金和层压体，具有比形成量子阱的材料（包括Si，Ge或SiGe）更高的带隙。 RTD的固有的快速操作速度与减少互连延迟的3-D集成架构相结合，将产生具有低噪声特性的超快速电路。

公开(公告)号：US20110155341A1

公开(公告)日：2011-06-30

申请号：US12911259

申请日：2010-10-25

Applicant: Ming-Fu LI ,  Sheng-Chi TSAI ,  Ping-Kuo CHENG ,  Tai-Chang CHEN

Inventor： Ming-Fu LI ,  Sheng-Chi TSAI ,  Ping-Kuo CHENG ,  Tai-Chang CHEN

IPC: B22D17/22

CPC classification number: B22D17/22

Abstract: A mold set for manufacturing a case is provided. The mold set comprises an upper mold having a fluid channel; a lower mold facing the upper mold; and a drawing mold disposed between the upper mold and the lower mold, wherein the mold set has a case forming space formed among the upper mold, the lower mold and the drawing mold, and the mold set has a sharp-edge forming space communicating with the case forming space, and formed between the drawing mold and the lower mold.

Abstract translation: 提供了用于制造壳体的模具组。 模具组包括具有流体通道的上模具; 面向上模的下模具; 以及设置在上模和下模之间的拉拔模具，其中模具组具有形成于上模具，下模具和拉拔模具之间的壳体形成空间，并且模具组具有与 壳体形成空间，并且形成在拉拔模具和下模具之间。

公开(公告)号：US20090163005A1

公开(公告)日：2009-06-25

申请号：US12322932

申请日：2009-02-09

Applicant: Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

Inventor： Shiyang Zhu ,  Jingde Chen ,  Sungjoo Lee ,  Ming Fu Li ,  Jagar Singh ,  Chunxiang Zhu ,  Dim-Lee Kwong

IPC: H01L21/28

CPC classification number: H01L21/28518 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/47 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66643 ,  H01L29/7839

Abstract: A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Abstract translation: 提出了一种制造用于源极和漏极的镱硅化物（YbSi2-x）的N型肖特基势垒源极/漏极晶体管（N-SSDT）的方法。 YbSi2-x的制造与正常的CMOS工艺兼容，但是不需要ErSi2-x制造所需的超高真空。 为了防止在原位退火过程中镱的氧化并提高膜质量，已经开发了合适​​的覆盖层叠层。

公开(公告)号：US20050285208A1

公开(公告)日：2005-12-29

申请号：US11149975

申请日：2005-06-10

Applicant: Chi Ren ,  Hongyu Yu ,  Siu Hung Daniel Chan ,  Ming-Fu Li ,  Dim-Lee Kwong

Inventor： Chi Ren ,  Hongyu Yu ,  Siu Hung Daniel Chan ,  Ming-Fu Li ,  Dim-Lee Kwong

IPC: H01L21/28 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/76

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/823842

Abstract: A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.

Abstract translation: 一种用于半导体器件的栅电极，所述栅电极包括功函数为约4eV或更小的金属和金属氮化物的混合物。