公开(公告)号：US06799532B2

公开(公告)日：2004-10-05

申请号：US10650802

申请日：2003-08-29

申请人： Murray D. Sirkis ,  Joseph T. Verdeyen

发明人： Murray D. Sirkis ,  Joseph T. Verdeyen

IPC分类号： C23C1600

CPC分类号： H01J37/32266 ,  H01J37/32311 ,  H01J37/3299 ,  H05H1/0081

摘要： A method and system for controlling electron densities in a plasma processing system. By applying a dither voltage and a correction voltage to a voltage-controlled oscillator, electron (plasma) density of a plasma processing system (acting as an open resonator) may be measured and controlled as part of a plasma-based process.

公开(公告)号：US06741944B1

公开(公告)日：2004-05-25

申请号：US10031374

申请日：2002-05-22

申请人： Joseph T. Verdeyen ,  Wayne L. Johnson ,  Murray D. Sirkis

发明人： Joseph T. Verdeyen ,  Wayne L. Johnson ,  Murray D. Sirkis

IPC分类号： H01S313

CPC分类号： H01J37/32266 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299

摘要： A system for measuring plasma electon densities (e.g., in the range of 1010 to 1012 cm−3) and for controlling a plasma generator (240). Measurement of the plasma density is essential if plasma-assisted processes, such depositions or etches, are to be adequately controlled using a feedback control. Both the plasma measurement method and system generate a control voltage that in turn controls the plasma generator (240) to maintain the plasma electron density at a pre-selected value. The system utilizes a frequency stabilization system to lock the frequency of a local oscillator (100) to the resonant frequency of an open microwave resonator (245) when the resonant frequency changes due to the introduction of a plasma within the open resonator. The amplified output voltage of a second microwave discriminator may be used to control a plasma generator (240).

摘要翻译： 用于测量等离子体电离密度（例如，10 10 -10 cm -3 -3）的系统和用于控制等离子体发生器（240）的系统。 如果使用反馈控制充分控制等离子体辅助过程，这种沉积或蚀刻，则等离子体密度的测量是必不可少的。 等离子体测量方法和系统都产生控制电压，该控制电压又控制等离子体发生器（240）以将等离子体电子密度维持在预选值。 当谐振频率由于在开放谐振器内引入等离子体而改变时，系统利用频率稳定系统将本地振荡器（100）的频率锁定到开放式微波谐振器（245）的谐振频率。 第二微波识别器的放大的输出电压可以用于控制等离子体发生器（240）。

公开(公告)号：US06646386B1

公开(公告)日：2003-11-11

申请号：US10031373

申请日：2002-04-25

申请人： Murray D. Sirkis ,  Joseph T. Verdeyen

发明人： Murray D. Sirkis ,  Joseph T. Verdeyen

IPC分类号： H01J724

CPC分类号： H01J37/32266 ,  H01J37/32311 ,  H01J37/3299 ,  H05H1/0081

摘要： A method and system for controlling electron densities in a plasma processing system. By applying a dither voltage and a correction voltage to a voltage-controlled oscillator, electron (plasma) density of a plasma processing system (acting as an open resonator) may be measured and controlled as part of a plasma-based process.

摘要翻译： 一种用于控制等离子体处理系统中的电子密度的方法和系统。 通过向压控振荡器施加抖动电压和校正电压，可以作为等离子体处理的一部分来测量和控制等离子体处理系统的电子（等离子体）密度（作为开路谐振器）。

公开(公告)号：US06917204B2

公开(公告)日：2005-07-12

申请号：US10612824

申请日：2003-07-03

申请人： Andrej S. Mitrovic ,  Jovan Jevtic ,  Richard Parsons ,  Murray D. Sirkis

发明人： Andrej S. Mitrovic ,  Jovan Jevtic ,  Richard Parsons ,  Murray D. Sirkis

IPC分类号： H01J37/32 ,  H05H1/46 ,  G01N27/62 ,  G01R23/20 ,  H01L21/00 ,  H05H1/24

CPC分类号： H01J37/32091 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32174 ,  H05H1/46

摘要： A method for controlling the non-uniformities of plasma-processed semiconductor wafers by supplying the plasma with two electrical signals: a primary electrical signal that is used to excite the plasma, and a supplemental electrical signal. The supplemental signal may be composed of a plurality of electrical signals, each with a frequency harmonic to that of the primary signal. The phase of the supplemental signal is controlled with respect to the phase of the primary signal. By adjusting the parameters of the supplemental signal with respect to the primary signal, the user can control the parameters of the resultant plasma and, therefore, control the non-uniformities induced in the semiconductor wafer.

摘要翻译： 通过向等离子体提供两个电信号来控制等离子体处理的半导体晶片的不均匀性的方法：用于激发等离子体的初级电信号和补充电信号。 补充信号可以由多个电信号组成，每个电信号具有与主信号的频率谐波。 补充信号的相位相对于主信号的相位被控制。 通过调整相对于主信号的补充信号的参数，用户可以控制所得到的等离子体的参数，因此控制在半导体晶片中感应的非均匀性。

公开(公告)号：US06891124B2

公开(公告)日：2005-05-10

申请号：US10168544

申请日：2001-01-05

申请人： Medona B. Denton ,  Wayne L. Johnson ,  Murray D. Sirkis

发明人： Medona B. Denton ,  Wayne L. Johnson ,  Murray D. Sirkis

IPC分类号： G01J5/02 ,  G01J5/00 ,  G01K11/12 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/66 ,  B23K10/00

CPC分类号： G01K11/12 ,  H01L21/67248 ,  H01L22/12 ,  H01L22/26

摘要： A method and system for using transmission spectroscopy to measure a temperature of a substrate (135). By passing light through a substrate, the temperature of the substrate can be determined using the band-edge characteristics of the wafer. This in-situ method and system can be used as a feedback control in combination with a variable temperature substrate holder (182) to more accurately control the processing conditions of the substrate. By utilizing a multiplicity of measurement sites the variation of the temperature across the substrate (135) can also be measured.

摘要翻译： 一种使用透射光谱测量基板（135）的温度的方法和系统。 通过使光通过基板，可以使用晶片的带边特性来确定基板的温度。 这种原位方法和系统可以用作与可变温度衬底保持器（182）组合的反馈控制，以更精确地控制衬底的处理条件。 通过利用多个测量点，也可以测量跨越衬底（135）的温度变化。

公开(公告)号：US06753498B2

公开(公告)日：2004-06-22

申请号：US10346186

申请日：2003-01-17

申请人： Murray D. Sirkis ,  Eric Strang ,  Yu Wang Bibby ,  John E. Cronin

发明人： Murray D. Sirkis ,  Eric Strang ,  Yu Wang Bibby ,  John E. Cronin

IPC分类号： B23K1000

CPC分类号： H01J37/32009 ,  H01J37/32605

摘要： A plasma processing system includes an automated electrode retention mechanism (130) for providing automated engagement of a source electrode (152) with a drive electrode (154). In addition, an automated electrode handling system (320) is provided that has the ability to remove a source electrode (152) from the electrode retention mechanism and replace it with a second source electrode (152′) that is stored in a staging area (340) outside the plasma processing system vacuum chamber. The system may operate automatically under program control of a computer system (200) coupled thereto.

摘要翻译： 等离子体处理系统包括用于提供源电极（152）与驱动电极（154）的自动接合的自动电极保持机构（130）。 另外，提供了自动电极处理系统（320），其具有从电极固定机构移除源电极（152）并将其替换为存储在分段区域中的第二源电极（152'） 340）等离子体处理系统真空室外。 系统可以在与其耦合的计算机系统（200）的程序控制下自动操作。

公开(公告)号：US06861844B1

公开(公告)日：2005-03-01

申请号：US10031570

申请日：2000-07-20

申请人： Joseph T. Verdeyen ,  Wayne L. Johnson ,  Murray D. Sirkis

发明人： Joseph T. Verdeyen ,  Wayne L. Johnson ,  Murray D. Sirkis

IPC分类号： H05H1/00 ,  G01N27/64

CPC分类号： H05H1/0062

摘要： A system for measuring plasma electron densities (e.g., in the range of 1010 to 1012 cm−3) and for controlling a plasma generator. Measurement of the plasma electron density is used as part of a feedback control in plasma-assisted processes, such as depositions or etches. Both the plasma measurement method and system generate a control voltage that in turn controls the plasma generator. A programmable frequency source sequentially excites a number of the resonant modes of an open resonator placed within the plasma processing apparatus. The resonant frequencies of the resonant modes depend on the plasma electron density in the space between the reflectors of the open resonator. The apparatus automatically determines the increase in the resonant frequency of an arbitrarily chosen resonant mode of the open resonator due to the introduction of a plasma and compares that measured frequency to data previously entered. The comparison is by any one of (1) dedicated circuitry, (2) a digital signal processor, and (3) a specially programmed general purpose computer. The comparator calculates a control signal which is used to modify the power output of the plasma generator as necessary to achieve the desired plasma electron density.

摘要翻译： 一种用于测量等离子体电子密度（例如，在1010至1012cm-3范围内）和用于控制等离子体发生器的系统。 等离子体电子密度的测量用作等离子体辅助过程中的反馈控制的一部分，例如沉积或蚀刻。 等离子体测量方法和系统都产生控制电压，从而控制等离子体发生器。 可编程频率源顺序地激发放置在等离子体处理装置内的开放谐振器的多个谐振模式。 谐振模式的谐振频率取决于开路谐振器的反射器之间的空间中的等离子体电子密度。 该设备由于引入等离子体而自动确定开路谐振器的任意选择的谐振模式的谐振频率的增加，并将该测量频率与先前输入的数据进行比较。 比较由（1）专用电路，（2）数字信号处理器和（3）专门编程的通用计算机中的任何一个。 比较器计算用于修改等离子体发生器的功率输出的控制信号，以实现期望的等离子体电子密度。

公开(公告)号：US06573731B1

公开(公告)日：2003-06-03

申请号：US10030947

申请日：2002-04-09

申请人： Joseph T. Verdeyen ,  Wayne L. Johnson ,  Murray D. Sirkis

发明人： Joseph T. Verdeyen ,  Wayne L. Johnson ,  Murray D. Sirkis

IPC分类号： G01R2732

CPC分类号： H01J37/32266 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299

摘要： A method and system for measuring at least one of a plasma density and an electron density (e.g., in a range of 1010 to 1012 electrons/cm−3) using plasma induced changes in the frequency of a microwave oscillator. Measurement of at least one of the plasma density and the electron density enables plasma-assisted processes, such as depositions or etches, to be controlled using a feedback control. Both the measurement method and system generate a control voltage that in turn controls a plasma generator to maintain at least one of the plasma density and the electron density at a pre-selected value.

摘要翻译： 使用等离子体引起的微波振荡器的频率变化来测量等离子体密度和电子密度（例如，在1010至1012电子/ cm -3）的范围中的至少一个的方法和系统。 测量等离子体密度和电子密度中的至少一个使得能够使用反馈控制来控制诸如沉积或蚀刻的等离子体辅助处理。 测量方法和系统都产生控制电压，该控制电压又控制等离子体发生器以将等离子体密度和电子密度中的至少一个保持在预选值。

公开(公告)号：US4714810A

公开(公告)日：1987-12-22

申请号：US890406

申请日：1986-07-28

申请人： Murray D. Sirkis

发明人： Murray D. Sirkis

IPC分类号： H01L21/324 ,  H01L21/22 ,  H05B6/68 ,  H05B6/70 ,  H05B6/80

CPC分类号： H05B6/686 ,  H05B6/705 ,  H05B6/707 ,  H05B6/806

摘要： Means and method including a novel waveguide sample holder for applying traveling microwaves to heat thin low-resistivity semiconductor ribbons and wafers without a susceptor. Traveling microwaves are applied to the semiconductor materials, both with and without a traveling wave resonator. Efficient coupling is obtained by unique placement of the samples in the waveguide.

摘要翻译： 包括用于施加行进微波以加热薄的低电阻率半导体带和晶片而没有基座的新型波导样品保持器的方法和方法。 移动微波应用于具有和不具有行波谐振器的半导体材料。 通过在波导中独特地放置样品来获得有效的耦合。

公开(公告)号：US07164236B2

公开(公告)日：2007-01-16

申请号：US10793253

申请日：2004-03-05

申请人： Andrej S. Mitrovic ,  Eric J. Strang ,  Murray D. Sirkis ,  Bill H. Quon ,  Richard Parsons ,  Yuji Tsukamoto

发明人： Andrej S. Mitrovic ,  Eric J. Strang ,  Murray D. Sirkis ,  Bill H. Quon ,  Richard Parsons ,  Yuji Tsukamoto

IPC分类号： H05B31/26 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32935

摘要： A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, τi, Φi, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τi is the on-time of the RF power for the ith RF feed line, Φi is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece (176) being processed with a desired amount or degree of process uniformity.

摘要翻译： 一种用于产生和控制形成在电容耦合等离子体系统（100）中的等离子体（130）的方法和装置，其具有工件支撑构件（170）形式的等离子体电极（140）和偏置电极，其中等离子体电极 是单一的并且具有由多个RF馈电线（156）限定的多个区域（RF）和传递给其的RF功率。 电极区域也可以被定义为由绝缘体（426）分离的电极段（420）。 一组过程参数A = {n，τi，i，P i， 被定义; 其中n是在位置L i1处连接到电极上表面的RF馈送线的数量，τi是针对i 是相对于其他RF馈线中选择的一个RF馈线的第i个RF馈线的相位，P < SUB> i 是通过位置L i i处的第i个RF馈线传送到电极的RF功率，S是RF功率到 电极通过RF馈线。 调整这些参数中的一个或多个，使得等离子体系统的操作导致以期望的量或程度的均匀度处理工件（176）。